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At least 325 records · Page 18

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NASA NTRS1993

Spectroscopic ellipsometry studies of HF treated Si (100) surfaces

Both ex situ and in situ spectroscopic ellipsometry (SE) measurements were employed to investigate the effects of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that after a 20-s 9:1 HF dip without rinse, the Si(100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si(100) surface was observed, in an ultrahigh vacuum (UHV) chamber, and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface-layer, after being heated to approximately 550 C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.

Yao, Huade↗

NASA NTRS1998

In situ CF3 Detection in Low Pressure Inductive Discharges by Fourier Transform Infrared Spectroscopy

The detection of CF(x) (x=1-3) radicals in low pressure discharges using source gases such as CF4 and CHF3 is of importance to the understanding of their chemical structure and relevance in plasma based etching processes. These radicals are known to contribute to the formation of fluorocarbon polymer films, which affect the selectivity and anisotropy of etching. In this study, we present preliminary results of the quantitative measurement of trifluoromethyl radicals, CF3, in low pressure discharges. The discharge studied here is an inductively (transformer) coupled plasma (ICP) source in the GEC reference cell, operating on pure CF4 at pressures ranging from 10 - 100 mTorr, This plasma source generates higher electron number densities at lower operating pressures than obtainable with the parallel-plate capacitively coupled version of the GEC reference cell. Also, this expanded operating regime is more relevant to new generations of industrial plasma reactors being used by the microelectronics industry. Fourier transform infrared (FTIR) spectroscopy is employed to observe the absorption band of CF3 radicals in the electronic ground state X2Al in the region of 1233-1270/cm. The spectrometer is equipped with a high sensitivity HgCdTe (MCT) detector and has a fixed resolution of 0.125/cm. The CF3 concentrations are measured for a range of operating pressures and discharge power levels.

Kim, J. S.↗

DOE OSTI2025

Si content in methacrylamide-containing A- b -(B- r -C) block copolymers and its impact on reactive ion etching properties

Block copolymers (BCPs) of an A-block-(B-random-C) architecture have been explored as materials for nanolithography because the composition and chemistry of the random block enables modification of thermodynamic and wetting properties to meet manufacturing criteria. Here, in this study, A-b-(B-r-C) BCPs created by an amidation reaction of polystyrene-block-poly(pentafluorophenyl methacrylate) (PS-b-PPFMA) with controlled amounts of Si add insight to previous conclusions about the dual contributions of BCP chemistry and reactive ion etch (RIE) gas chemistry on etch properties. We focus on two RIE etch characteristics: organosilicon etch resistance in H 2 /N 2 plasma etching and enhanced removal of non-styrenic structures in an Ar/O 2 etch. Consistent with previous studies, higher amounts of Si result in greater etch resistance under H 2 /N 2 RIE, where at least ∼10 wt. % Si is necessary to exhibit sufficient etch resistance. By contrast, Ar/O 2 etching resulted in etch rates independent of Si content. We observe previously unreported surface roughening aligned with morphological domains during the H 2 /N 2 etch of modified PS-b-PPFMA BCPs. Limited in the amount of allowable Si to attain equal surface energy between blocks, these BCPs are further disqualified in forming a Si-containing mask. However, in an Ar/O 2 etch, the same BCPs exhibit suitable etch contrast and smooth domain structures, forming a uniform PS mask. Ultimately, this study uses the chemical flexibility of these materials to demonstrate the mechanisms of interactions between BCP and etch chemistry that must be considered to design effective materials for pattern transfer applications.

Eom, Christopher J. [University of Chicago, IL (Un↗

NASA NTRS1986

Dry etching of beta-SiC in CF4 and CF4 + O2 mixtures

Dry etching of cubic (100) beta-SiC single-crystal thin films produced via chemical-vapor deposition (CVD) has been performed in CF4 and CF4 + O2 mixtures, in both the reactive-ion-etching (RIE) and plasma-etching modes. The latter process yielded measurable etch rates, but produced a dark surface layer which appears, from the results of secondary-ion mass spectrometry, to be residual SiC. The RIE samples had no residual layer, but Auger electron spectroscopy did reveal a C-rich surface. The optimal RIE conditions were obtained with 10 sccm of pure CF4 at 40 mtorr and a power density of 0.548 W/sq cm, giving an etch rate of 23.3 nm/min. Neither the increase of temperature between 293 and 573 K, nor the incremental addition of O2 to CF4 to 50 percent, produced any strong effect on the etch rates of SiC during RIE. Pictorial evidence of fine line structures produced by RIE of beta-SiC films are also presented.

Palmour, J. W.↗

NASA NTRS1966

Etching process mills PH 14-8 Mo alloy steel to precise tolerances

Chemical milling process, which combines an aqua regia etchant with a sulfonate wetting agent, produces finishes on PH 14-8 molybdenum alloy steel to precise tolerances. This process permits precision removal of excess metal from the steel in annealed and/or aged conditions.

Chipman, B. L.↗

NASA NTRS1978

Ion beam sputtering of fluoropolymers

Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

Sovey, J. S.↗

DOE OSTI2025

Nb 2 O 5 Protection Layers for Hydrogen Evolution by p-InP Photocathodes in Acidic Electrolytes

Coatings of HfO 2 , Ta 2 O 5 , TiO 2 , and Nb 2 O 5 were evaluated as protection layers for p-InP photocathodes in aqueous acidic electrolytes. Each candidate protection layer was characterized based on interfacial conduction of photogenerated electrons, the thermodynamic and kinetic stability of the overlayer over the relevant potential and pH range for cathodic fuel-forming half-reactions, and inhibition of the primary anodic and/or chemical dissolution processes that limit electrode stability. The conduction of photogenerated electrons and inhibition of anodic oxidation was evaluated using V 3+ / 2+ in 5.0 M HCl(aq) as a one-electron redox couple with a potential close to that of hydrogen evolution in acidic media. Failure modes due to cathodic plating of metal, as well as anodic dissolution and chemical dissolution processes, were evaluated for photocathodes made from etched p-InP, platinized p-InP, and p-InP photoelectrodes that had been coated with the various oxide films and then platinized for use in photoelectrochemical hydrogen evolution in acidic aqueous electrolytes. Nb 2 O 5 best met all of the criteria, contrasting with TiO 2 , which is thermodynamically and kinetically unstable in acid over the potential range relevant for the hydrogen evolution and/or CO 2 reduction electrochemical half-reactions. Furthermore, these protocols should be useful for other materials and semiconductors to determine the effectiveness of protection layers for photocathodes.

Electrodes↗

DOE OSTI2020

Etching sharp tips from thin metallic wires for tuning-fork-based scanning probe microscopy

Sharp tips are critical for obtaining high resolution images in scanning probe microscopy (SPM), particularly in samples with large variations in topography. For tuning-fork-based SPM, such tips are commonly obtained by electrochemical etching of metallic wires (e.g., tungsten). Electrochemical etching of metallic wires is the preferred means of preparing tips for scanning tunneling microscopy (STM), and techniques for obtaining sharp tips have been investigated extensively. However, the requirements for STM and tuning-fork-based SPM are different. In particular, the wires used in STM are typically 250-500 μ m in diameter, while the wires used for tuning-fork-based SPM are usually an order of magnitude narrower in order to minimize loading of the tuning fork: 25-50 μ m and sometimes down to a few micrometers in diameter. Consequently, many of the recipes developed for etching thicker metallic wires for STM tips do not give optimal results for smaller diameter wires. The authors describe here a modification of the etching circuit of Ibe et al . that significantly improves the reproducibility and reliability of the etching process for thin wires, and discuss the parameters that affect the aspect ratio of produced tips.

42 ENGINEERING↗

NASA NTRS1997

Computational Study of Electron-Molecule Collisions Related to Low-Temperature Plasmas

Computational study of electron-molecule collisions not only complements experimental measurements, but can also be used to investigate processes not readily accessible experimentally. A number of ab initio computational methods are available for these types of calculations. Here we describe a recently developed technique, the finite element Z-matrix method, Analogous to the R-matrix, method, it partitions the space into regions and employs real matrix elements. However, unlike the implementation of the R-matrix method commonly used in atomic and molecular physics, the Z-matrix method is fully variational. In the present implementation, a mixed basis of finite elements and Gaussians is used to represent the continuum electron, thus offering full flexibility without imposing fixed boundary conditions. Numerical examples include the electron-impact dissociation of N2 via the metastable A3Su+ state, a process which may be important in the lower thermosphere, and the dissociation of the CF radical, a process of interest to plasma etching. To understand the dissociation pathways, large scale quantum chemical calculations have been carried out for all target states which dissociate to the lowest five limits in the case of N2, and to the lowest two limits in the case of CF. For N2, the structural calculations clearly show the preference for predissociation if the initial state is the ground X1 Sg+ state, but direct dissociation appears to be preferable if the initial state is the A3Su+ state. Multi-configuration SCF target functions are used in the collisional calculation.

Huo, Winifred M.↗

NASA NTRS2003

Ultra-Sensitive Magnetoresistive Displacement Sensing Device

An ultrasensitive displacement sensing device for use in accelerometers, pressure gauges, temperature transducers, and the like, comprises a sputter deposited, multilayer, magnetoresistive field sensor with a variable electrical resistance based on an imposed magnetic field. The device detects displacement by sensing changes in the local magnetic field about the magnetoresistive field sensor caused by the displacement of a hard magnetic film on a movable microstructure. The microstructure, which may be a cantilever, membrane, bridge, or other microelement, moves under the influence of an acceleration a known displacement predicted by the configuration and materials selected, and the resulting change in the electrical resistance of the MR sensor can be used to calculate the displacement. Using a micromachining approach, very thin silicon and silicon nitride membranes are fabricated in one preferred embodiment by means of anisotropic etching of silicon wafers. Other approaches include reactive ion etching of silicon on insulator (SOI), or Low Pressure Chemical Vapor Deposition of silicon nitride films over silicon substrates. The device is found to be improved with the use of giant magnetoresistive elements to detect changes in the local magnetic field.

Olivas, John D.↗

DOE OSTI2024

Growth of Native Oxides of Niobium Thin Films for Superconducting Qubits with Etching Chemistry

Niobium thin films have been broadly applied in building superconducting qubits for quantum computing hardware. While improvements have been made by device engineering efforts, scaling the energy-sensitive quantum system requires materials study for further improvements. In this study, we performed XPS and ToF-SIMS analysis for Nb thin films across samples with different manufacturing techniques. By varying the air exposure time of the samples, this research comparatively investigates the chemical and depth profile of native oxides before and after the etching process. We observe a rapid logarithmic growth of oxide thickness across all samples and the dominant presence and growth of Niobium pentoxide in atomic percentage concentration on the surface. This comparative study provides insight into oxides mitigation strategies and correlation with qubits performance.

Lei, Zhicheng↗

DOE OSTI2023

Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Anisotropic etching is a widely used process in semiconductor manufacturing, in particular, for micro- and nanoscale texturing of silicon surfaces for black silicon production. The typical process of plasma-assisted etching uses energetic ions to remove materials in the vertical direction, creating anisotropic etch profiles. Plasmaless anisotropic etching, considered here, is a less common process that does not use ions and plasma. The anisotropy is caused by the unequal etching rates of different crystal planes; the etching process, thus, proceeds in a preferred direction. In this paper, we have performed quantum chemistry modeling of gas-surface reactions involved in the etching of silicon surfaces by molecular fluorine. The results confirm that orientation-dependent etch rates are the reason for anisotropy. The modeling of F 2 dissociative chemisorption on F-terminated silicon surfaces shows that Si–Si bond breaking is slow for the Si(111) surface, while it is fast for Si(100) and Si(110) surfaces. Both Si(100) and Si(110) surfaces incorporate a larger number of fluorine atoms resulting in Si–Si bonds having a larger amount of positive charge, which lowers the reaction barrier of F 2 dissociative chemisorption, yielding a higher etch rate for Si(100) and Si(110) surfaces compared to Si(111) surfaces. Molecular dynamics modeling of the same reactions has shown that the chosen reactive bond order potential does not accurately reproduce the lower reaction barriers for F 2 dissociative chemisorption on Si(100) and Si(100) surfaces. Furthermore, reparameterization is necessary to model the anisotropic etching process that occurs at lower temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Self-terminating etching processes for post-processing of 3D printed metal alloys

A process is provided to remove a selective amount of material from a metal part fabricated by additive manufacturing in a self-terminating manner. The process can be used to remove support structures and trapped powder from a metal part as well as to smooth surfaces of a 3D printed metal part. In one embodiment, selected surfaces of the metal part are treated to make the selected surfaces at least one of mechanically and chemically unstable. The unstable portion of the metal support can then be removed chemically, electrochemically, with a pressure differential, and/or through vapor-phase etching. In one embodiment, the metal part may comprise one or more of an aluminum alloy, a titanium alloy, and a copper alloy. The process can be used to modify any fluid or vapor-accessible regions and surfaces of a 3D printed metal part.

Hildreth, Owen J.↗

NASA NTRS1991

Grooved surfaces on InP

Formation of a textured or grooved front surface on a solar cell can increase the efficiency in several ways, including enhanced absorption and light trapping. In III-IV materials the (111) plane is chemically different form the (1'1'1') plane, and both etching and epitaxial deposition behave differently on these surfaces. The current state of profile etching in InP is summarized. Data are presented on novel geometries attainable as a function of etchant temperature and composition, substrate orientation and carrier concentration, and the oxide thickness between the substrate and the photoresist. Depending on dopant concentration, the same etchant can produce either anisotropic or isotropic grooves. V-grooved solar cells were manufactured on InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed.

Bailey, Sheila G.↗

DOE OSTI2024

Evolution of Surface Chemistry in Two‐Dimensional MXenes: From Mixed to Tunable Uniform Terminations

Abstract Surface chemistry of MXenes is of great interest as the terminations can define the intrinsic properties of this family of materials. The diverse and tunable terminations also distinguish MXenes from many other 2D materials. Conventional fluoride‐containing reagents etching approaches resulted in MXenes with mixed fluoro‐, oxo‐, and hydroxyl surface groups. The relatively strong chemical bonding of MXenes’ surface metal atoms with oxygen and fluorine makes post‐synthetic covalent surface modifications of such MXenes unfavorable. In this minireview, we focus on the recent advances in MXenes with uniform surface terminations. Unconventional methods, including Lewis acidic molten salt etching (LAMS) and bottom‐up direct synthesis, have been proven successful in producing halide‐terminated MXenes. These synthetic strategies have opened new possibilities for MXenes because weaker surface chemical bonds in halide‐terminated MXenes facilitate post‐synthetic covalent surface modifications. Both computational and experimental results on surface termination‐dependent properties are summarized and discussed. Finally, we offer our perspective on the opportunities and challenges in this exciting research field.

Jiang, Mengni↗

DOE OSTI2024

Evolution of Surface Chemistry in Two‐Dimensional MXenes: From Mixed to Tunable Uniform Terminations

Jiang, Mengni↗

DOE OSTI2020

Oxide-Free Three-Dimensional Germanium/Silicon Core–Shell Metalattice Made by High-Pressure Confined Chemical Vapor Deposition

Metalattices are crystalline arrays of uniform particles in which the period of the crystal is close to some characteristic physical length scale of the material. In this work, we explore the synthesis and properties of a germanium metalattice in which the similar to 70 nm periodicity of a silica colloidal crystal template is close to the similar to 24 nm Bohr exciton radius of the nanocrystalline Ge replica. The problem of Ge surface oxidation can be significant when exploring quantum confinement effects or designing electronically coupled nanostructures because of the high surface area to volume ratio at the nanoscale. To eliminate surface oxidation, we developed a coreshell synthesis in which the Ge metalattice is protected by an oxide-free Si interfacial layer, and we explore its properties by transmission electron microscopy (TEM), Raman spectroscopy, and electron energy loss spectroscopy (EELS). The interstices of a colloidal crystal film grown from 69 nm diameter spherical silica particles were filled with polycrystalline Ge by high-pressure confined chemical vapor deposition (HPcCVD) from GeH4. After the SiO2 template was etched away with aqueous HF, the Ge replica was uniformly coated with an amorphous Si shell by HPcCVD as confirmed by TEM-EDS (energy-dispersive X-ray spectroscopy) and Raman spectroscopy. Formation of the shell prevents oxidation of the Ge core within the detection limit of XPS. The electronic properties of the core-shell structure were studied by accessing the Ge 3d edge onset using STEM-EELS. A blue shift in the edge onset with decreasing size of Ge sites in the metalattices suggests quantum confinement of the Ge core. The degree of quantum confinement of the Ge core depends on the void sizes in the template, which is tunable by using silica particles of varying size. The edge onset also shows a shift to higher energy near the shell in comparison with the Ge core. This shift along with the observation of Ge-Si vibrational modes in the Raman spectrum indicate interdiffusion of Ge and Si. Both the size of the voids in the template and core-shell interdiffusion of Si and Ge can in principle be tuned to modify the electronic properties of the Ge metalattice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Phase-Selective Synthesis of Rhombohedral WS 2 Multilayers by Confined-Space Hybrid Metal–Organic Chemical Vapor Deposition

Rhombohedral polytype transition metal dichalcogenide (TMDC) multilayers exhibit non-centrosymmetric interlayer stacking, which yields intriguing properties such as ferroelectricity, a large second-order susceptibility coefficient χ (2) , giant valley coherence, and a bulk photovoltaic effect. These properties have spurred significant interest in developing phase-selective growth methods for multilayer rhombohedral TMDC films. Here, in this study, we report a confined-space, hybrid metal–organic chemical vapor deposition method that preferentially grows 3R-WS 2 multilayer films with thickness up to 130 nm. We confirm the 3R stacking structure via polarization-resolved second-harmonic generation characterization and the 3-fold symmetry revealed by anisotropic H 2 O 2 etching. The multilayer 3R WS 2 shows a dendritic morphology, which is indicative of diffusion-limited growth. Multilayer regions with large, stepped terraces enable layer-resolved evaluation of the optical properties of 3R-WS 2 via Raman, photoluminescence, and differential reflectance spectroscopy. These measurements confirm the interfacial quality and suggest ferroelectric modification of the exciton energies.

3R-WS2↗