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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Material‐Driven Neuronal Oscillators and Filters via Active Reactance in CC‐NDR and VC‐NDR Electro‐Thermal Memristors

The continued scaling of artificial intelligence and telecommunications hardware is increasingly constrained by the power, bandwidth, and area limitations of transistor-based circuits. Neuromorphic processor units, analog oscillators, and active inductors and capacitors rely on complex multi-transistor architectures restricting material choices and incurring energy and footprint overhead. Here, we show that active reactance in electro-thermal memristors provides an intrinsic, material driven route to neuronal oscillator dynamics and signal processing. Using a physics-based compact modeling framework, we bridge negative differential resistance (NDR) and bias-tunable reactance, which underlies spiking dynamics in electro-thermal memristors. Memristors with negative temperature coefficients of resistance (TCR) manifest current-controlled (CC-) NDR and act as active inductors, thus generating spiking above a critical circuit capacitance; whereas memristors with positive TCR manifest voltage-controlled (VC-) NDR and active capacitance, leading to spiking above a critical inductance. By creating a compact model for La 0.7 Ca 0.3 MnO 3 as a representative VC-NDR material and comparing it with LaCoO 3 manifesting CC-NDR, we explain the physical origins of their distinct current-voltage characteristics, reactive phase shifts and consequent spiking behaviors. Finally, we demonstrate tunable filtering enabled by the active reactance of electro-thermal memristors, establishing them as a compact hardware platform for neuronal oscillator functionality and integrated filtering beyond conventional CMOS.

active reactance↗
DOE OSTI2026

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗
NASA NTRS1998

RH1020 Single Event Clock Upset Summary Report

This report summarizes the testing and analysis of "single event clock upset' in the RH1020. Also included are SEU-rate predictions and design recommendations for risk analysis and reduction. The subject of "upsets" in the RH1020 is best understood by using a model consisting of a global clock buffer and a D-type flip-flop as the basic memory unit. The RH1020 is built on the ACT 1 family architecture. As such, it has one low-skew global clock buffer with a TTL-level input threshold that is accessed via a single dedicated pin. The clock signal is driven to full CMOS levels, buffered, and sent to individual row buffers with one buffer per channel. For low-skew performance, the outputs of all of the RH1020 row buffers are shorted together via metal lines, as is done in the A1020B. All storage in the RH1020 consists of routed flip-flops, constructed with multiplexors and feedback through the routing segments. A simple latch can be constructed from a single (combinatorial or C) module; an edge-triggered flip-flop is constructed using two concatenated latches. There is no storage in the I/O modules. The front end of the clock buffering circuitry, at a common point relative to the row buffer, is a sub-circuit that was determined to be the most susceptible to heavy ions. This is due, in part, to its smaller transistors compared to the rest of the circuitry. This conclusion is also supported by SPICE simulations and an analysis of the heavy ion data, described in this report. The edge triggered D flip-flop has two single-event-upset modes. Mode one, called C-module upset, is caused by a heavy ion striking the C-module's sensitive area on the silicon and produces a soft single bit error at the output of the flip-flop. Mode two, called clock upset, is caused by a heavy ion strike on the clock buffer, generating a runt pulse interpreted as a false clock signal and consequently producing errors at the flip-flop outputs. C-module upset sensitivity in the RH1020 is essentially the same as that of its ACT 1 siblings (A1020, A1020A and A1020B), which were well tested, analyzed, and documented in the literature.

Katz, Richard B.↗
DOE OSTI2025

A Radiation-Hard 8-Channel 15-Bit 40-MSPS ADC for the ATLAS Liquid Argon Calorimeter Readout

The custom design of a radiation-hardened, 8-channel, 40-MSPS, 15-bit resolution, 14.2-bit dynamic range, 11.4-ENOB ADC data acquisition ASIC fabricated in a commercial 65-nm triple-well CMOS technology is presented. The ADC is developed for and integrates seamlessly into the readout system for the ATLAS liquid argon (LAr) calorimeter in the high-luminosity large hadron collider (HLLHC) upgrade at CERN, which will require a total of 364 936 ADC channels. A three-stage MDAC+SAR pipelined ADC architecture was designed to meet the physics requirements and scientific goals of the ATLAS experiment. The ADC is a fully self-contained data acquisition system that includes foreground calibration, digital data processing, digital control, and supporting circuitry. The measured performance shows the ADC achieves a competitive dynamic range and SNDR, and it meets or exceeds the ATLAS analog requirements. Radiation tolerance and scalability design considerations were implemented at the device-, circuit-, and system-level. Radiation-hardening-by-design techniques used include redundancy for digital circuits, the use of MiM capacitors, and a hybrid RC-DAC for the ADC core. The ADC ASIC was demonstrated to be robust against the effects of the intense radiation expected in the HL-LHC experimental environment.

DAQ↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗
NASA NTRS1996

High-Speed Soft-Decision Decoding of Two Reed-Muller Codes

In this research, we have proposed the (64, 40, 8) subcode of the third-order Reed-Muller (RM) code to NASA for high-speed satellite communications. This RM subcode can be used either alone or as an inner code of a concatenated coding system with the NASA standard (255, 233, 33) Reed-Solomon (RS) code as the outer code to achieve high performance (or low bit-error rate) with reduced decoding complexity. It can also be used as a component code in a multilevel bandwidth efficient coded modulation system to achieve reliable bandwidth efficient data transmission. This report will summarize the key progress we have made toward achieving our eventual goal of implementing, a decoder system based upon this code. In the first phase of study, we investigated the complexities of various sectionalized trellis diagrams for the proposed (64, 40, 8) RM subcode. We found a specific 8-trellis diagram for this code which requires the least decoding complexity with a high possibility of achieving a decoding speed of 600 M bits per second (Mbps). The combination of a large number of states and a high data rate will be made possible due to the utilization of a high degree of parallelism throughout the architecture. This trellis diagram will be presented and briefly described. In the second phase of study, which was carried out through the past year, we investigated circuit architectures to determine the feasibility of VLSI implementation of a high-speed Viterbi decoder based on this 8-section trellis diagram. We began to examine specific design and implementation approaches to implement a fully custom integrated circuit (IC) which will be a key building block for a decoder system implementation. The key results will be presented in this report. This report will be divided into three primary sections. First, we will briefly describe the system block diagram in which the proposed decoder is assumed to be operating, and present some of the key architectural approaches being used to implement the system at high speed. Second, we will describe details of the 8-trellis diagram we found to best meet the trade-offs between chip and overall system complexity. The chosen approach implements the trellis for the (64, 40, 8) RM subcode with 32 independent sub-trellises. And third, we will describe results of our feasibility study on the implementation of such an IC chip in CMOS technology to implement one of these sub-trellises.

Lin, Shu↗
NASA NTRS1996

Circuit Design Approaches for Implementation of a Subtrellis IC for a Reed-Muller Subcode

In this research, we have proposed the (64, 40, 8) subcode of the third-order Reed-Muller (RM) code to NASA for high-speed satellite communications. This RM subcode can be used either alone or as an inner code of a concatenated coding system with the NASA standard (255, 233, 33) Reed-Solomon (RS) code as the outer code to achieve high performance (or low bit-error rate) with reduced decoding complexity. It can also be used as a component code in a multilevel bandwidth efficient coded modulation system to achieve reliable bandwidth efficient data transmission. This report will summarize the key progress we have made toward achieving our eventual goal of implementing a decoder system based upon this code. In the first phase of study, we investigated the complexities of various sectionalized trellis diagrams for the proposed (64, 40, 8) RM subcode. We found a specific 8-trellis diagram for this code which requires the least decoding complexity with a high possibility of achieving a decoding speed of 600 M bits per second (Mbps). The combination of a large number of states and a high data rate will be made possible due to the utilization of a high degree of parallelism throughout the architecture. This trellis diagram will be presented and briefly described. In the second phase of study which was carried out through the past year, we investigated circuit architectures to determine the feasibility of VLSI implementation of a high-speed Viterbi decoder based on this 8-section trellis diagram. We began to examine specific design and implementation approaches to implement a fully custom integrated circuit (IC) which will be a key building block for a decoder system implementation. The key results will be presented in this report. This report will be divided into three primary sections. First, we will briefly describe the system block diagram in which the proposed decoder is assumed to be operating and present some of the key architectural approaches being used to implement the system at high speed. Second, we will describe details of the 8-trellis diagram we found to best meet the trade-offs between chip and overall system complexity. The chosen approach implements the trellis for the (64, 40, 8) RM subcode with 32 independent sub-trellises. And third, we will describe results of our feasibility study on the implementation of such an IC chip in CMOS technology to implement one of these subtrellises.

Lin, Shu↗
NASA NTRS1996

High-Speed Soft-Decision Decoding of Two Reed-Muller Codes

In his research, we have proposed the (64, 40, 8) subcode of the third-order Reed-Muller (RM) code to NASA for high-speed satellite communications. This RM subcode can be used either alone or as an inner code of a concatenated coding system with the NASA standard (255, 233, 33) Reed-Solomon (RS) code as the outer code to achieve high performance (or low bit-error rate) with reduced decoding complexity. It can also be used as a component code in a multilevel bandwidth efficient coded modulation system to achieve reliable bandwidth efficient data transmission. This report will summarize the key progress we have made toward achieving our eventual goal of implementing a decoder system based upon this code. In the first phase of study, we investigated the complexities of various sectionalized trellis diagrams for the proposed (64, 40, 8) RNI subcode. We found a specific 8-trellis diagram for this code which requires the least decoding complexity with a high possibility of achieving a decoding speed of 600 M bits per second (Mbps). The combination of a large number of states and a hi ch data rate will be made possible due to the utilization of a high degree of parallelism throughout the architecture. This trellis diagram will be presented and briefly described. In the second phase of study which was carried out through the past year, we investigated circuit architectures to determine the feasibility of VLSI implementation of a high-speed Viterbi decoder based on this 8-section trellis diagram. We began to examine specific design and implementation approaches to implement a fully custom integrated circuit (IC) which will be a key building block for a decoder system implementation. The key results will be presented in this report. This report will be divided into three primary sections. First, we will briefly describe the system block diagram in which the proposed decoder is assumed to be operating and present some of the key architectural approaches being used to implement the system at high speed. Second, we will describe details of the 8-trellis diagram we found to best meet the trade-offs between chip and overall system complexity. The chosen approach implements the trellis for the (64, 40, 8) RM subcode with 32 independent sub-trellises. And third, we will describe results of our feasibility study on the implementation of such an IC chip in CMOS technology to implement one of these sub-trellises.

Lin, Shu↗
NASA NTRS1996

Circuit Design Approaches for Implementation of a Subtrellis IC for a Reed-Muller Subcode

In his research, we have proposed the (64, 40, 8) subcode of the third-order Reed-Muller (RM) code to NASA for high-speed satellite communications. This RM subcode can be used either alone or as an inner code of a concatenated coding system with the NASA standard (255, 233, 33) Reed-Solomon (RS) code as the outer code to achieve high performance (or low bit-error rate) with reduced decoding complexity. It can also be used as a component code in a multilevel bandwidth efficient coded modulation system to achieve reliable bandwidth efficient data transmission. This report will summarize the key progress we have made toward achieving our eventual goal of implementing a decoder system based upon this code. In the first phase of study, we investigated the complexities of various sectionalized trellis diagrams for the proposed (64, 40, 8) RM subcode. We found a specific 8-trellis diagram for this code which requires the least decoding complexity with a high possibility of achieving a decoding speed of 600 M bits per second(Mbps). The combination of a large number of states and a high data rate will be made possible due to the utilization of a high degree of parallelism throughout the architecture. This trellis diagram will be presented and briefly described. In the second phase of study which was carried out through the past year, we investigated circuit architectures to determine the feasibility of VLSI implementation of a high- speed Viterbi decoder based on this 8-section trellis diagram. We began to examine specific design and implementation approaches to implement a fully custom integrated circuit (IC) which will be a key building block for a decoder system implementation. The key results will be presented in this report. This report will be divided into three primary sections. First, we will briefly describe the system block diagram in which the proposed decoder is assumed to be operating and present some of the key architectural approaches being used to implement the system at high speed. Second, we will describe details of the 8-trellis diagram we found to best meet the trade-offs between chip and overall system complexity. The chosen approach implements the trellis for the (64, 40, 8) RM subcode with 32 independent sub-trellises. And third, we will describe results of our feasibility study on the implementation of such an IC chip in CMOS technology to implement one of these subtrellises.

Lin, Shu↗
DOE OSTI2025

GRAPH — an readout ASIC for large MCP based detectors

We present a programmable 16 channel, mixed signal, low power readout ASIC, having the project historically named Gigasample Recorder of Analog waveforms from a PHotodetector (GRAPH). It is designed to read large aperture single photon imaging detectors using micro channel plates for charge multiplication, and measuring the detector's response on crossed strips anodes to extrapolate the incoming photon position. Each channel consists of a fast, low power and low noise charge sensitive amplifier, which provides a myriad of coarse and fine programmable options for gain and shaping settings. Further, the amplified signal is recorded using, to our knowledge novel, the Hybrid Universal sampLing Architecture (HULA) ADC. A kind of mixed signal double buffer memory, that enables concurrent waveform recording, and selected event digitized data extraction. The sampling frequency is freely adjustable between few kHz up to 125 MHz, while the chip's internal digital memory holds a history 2048 samples for each channel, with a digital headroom of 12 bits. An optimized region of interest sample-read algorithm allows to extract the information just around the event pulse peak, while selecting the next event, thus substantially reducing the operational dead time. The chip is designed in 130 nm TSMC CMOS technology, and its power consumption is around 47 mW per channel.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Versatile High-Gain Low-Noise Readout ASIC for Silicon Microstrip Tracking Detectors

This work presents Turpial, a custom-designed low- power front-end readout ASIC for microstrip silicon sensors. Implemented in 130 nm CMOS technology, the chip integrates 64 identical readout channels, each including a configurable charge-sensitive amplifier, a bipolar pulse shaper, a 32-sample 50 Msps analog memory, and a 12-bit RC-hybrid SAR ADC operating at 1 Msps. To satisfy the target power budget of 5 mW per channel, the architecture employs a time-decoupled readout scheme in which fast transient signals are first captured in the analog memory and subsequently digitized at a lower rate. Turpial supports a wide dynamic range from 1 kℎ+ to 1 Mℎ+ while maintaining low noise performance, targeting an equivalent noise charge (ENC) below 200 𝑒−including the sensor, and providing a maximum gain of 1500 mV/fC. A digital block manages slow control, data acquisition, and data serialization through dual CML 300 Mb/s serializers. In addition, an on-chip reference circuit, based on a sub-1 V bandgap reference and an integrated LDO regulator, eliminates the need for external reference circuitry. Experimental results demonstrate that both the individual building blocks and the fully integrated ASIC meet the design specifications.

Hernandez, Hugo [Stanford University] (ORCID:00000↗
NASA NTRS2011

Measuring Input Thresholds on an Existing Board

A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.

Kuperman, Igor↗
NASA NTRS2009

Multi-Modulator for Bandwidth-Efficient Communication

A modulator circuit board has recently been developed to be used in conjunction with a vector modulator to generate any of a large number of modulations for bandwidth-efficient radio transmission of digital data signals at rates than can exceed 100 Mb/s. The modulations include quadrature phaseshift keying (QPSK), offset quadrature phase-shift keying (OQPSK), Gaussian minimum-shift keying (GMSK), and octonary phase-shift keying (8PSK) with square-root raised-cosine pulse shaping. The figure is a greatly simplified block diagram showing the relationship between the modulator board and the rest of the transmitter. The role of the modulator board is to encode the incoming data stream and to shape the resulting pulses, which are fed as inputs to the vector modulator. The combination of encoding and pulse shaping in a given application is chosen to maximize the bandwidth efficiency. The modulator board includes gallium arsenide serial-to-parallel converters at its input end. A complementary metal oxide/semiconductor (CMOS) field-programmable gate array (FPGA) performs the coding and modulation computations and utilizes parallel processing in doing so. The results of the parallel computation are combined and converted to pulse waveforms by use of gallium arsenide parallel-to-serial converters integrated with digital-to-analog converters. Without changing the hardware, one can configure the modulator to produce any of the designed combinations of coding and modulation by loading the appropriate bit configuration file into the FPGA.

Gray, Andrew↗
NASA NTRS2001

Flight Computer Design for the Space Technology 5 (ST-5) Mission

As part of NASA's New Millennium Program, the Space Technology 5 mission will validate a variety of technologies for nano-satellite and constellation mission applications. Included are: a miniaturized and low power X-band transponder, a constellation communication and navigation transceiver, a cold gas micro-thruster, two different variable emittance (thermal) controllers, flex cables for solar array power collection, autonomous groundbased constellation management tools, and a new CMOS ultra low-power, radiation-tolerant, +0.5 volt logic technology. The ST-5 focus is on small and low-power. A single-processor, multi-function flight computer will implement direct digital and analog interfaces to all of the other spacecraft subsystems and components. There will not be a distributed data system that uses a standardized serial bus such as MIL-STD-1553 or MIL-STD-1773. The flight software running on the single processor will be responsible for all real-time processing associated with: guidance, navigation and control, command and data handling (C&DH) including uplink/downlink, power switching and battery charge management, science data analysis and storage, intra-constellation communications, and housekeeping data collection and logging. As a nanosatellite trail-blazer for future constellations of up to 100 separate space vehicles, ST-5 will demonstrate a compact (single board), low power (5.5 watts) solution to the data acquisition, control, communications, processing and storage requirements that have traditionally required an entire network of separate circuit boards and/or avionics boxes. In addition to the New Millennium technologies, other major spacecraft subsystems include the power system electronics, a lithium-ion battery, triple-junction solar cell arrays, a science-grade magnetometer, a miniature spinning sun sensor, and a propulsion system.

Speer, David↗
DOE OSTI2026

Protonic nickelate device networks for spatiotemporal neuromorphic computing

Computation in biological neural circuits arises from the interplay of nonlinear temporal responses and spatially distributed dynamic network interactions. Replicating this richness in hardware has remained challenging, as most neuromorphic devices emulate only isolated neuron- or synapse-like functions. Here we introduce an integrated neuromorphic computing platform in which both nonlinear spatiotemporal processing and programmable memory are realized within a single perovskite nickelate material system. By engineering symmetric and asymmetric hydrogenated NdNiO 3 junction devices on the same wafer, we combine ultrafast, proton-mediated transient dynamics with stable multilevel resistance states. Networks of symmetric NdNiO 3 junctions exhibit emergent spatial interactions mediated by proton redistribution, while each node simultaneously provides short-term temporal memory, enabling nanosecond-scale operation with an energy cost of ~0.2 nJ per input. When interfaced with asymmetric output units serving as reconfigurable long-term weights, these networks allow both feature transformation and linear classification in the same material system. Leveraging these emergent interactions, the platform enables real-time pattern recognition and achieves high accuracy in spoken digit classification and early seizure detection, outperforming temporal-only or uncoupled architectures. These results position protonic nickelates as a compact, energy-efficient, CMOS-compatible platform that integrates processing and memory for scalable intelligent hardware.

Electrical and electronic engineering↗
NASA NTRS2016

Detector Control and Data Acquisition for the Wide-Field Infrared Survey Telescope (WFIRST) with a Custom ASIC

The Wide-Field Infrared Survey Telescope (WFIRST) will have the largest near-IR focal plane ever flown by NASA, a total of 18 4K x 4K devices. The project has adopted a system-level approach to detector control and data acquisition where 1) control and processing intelligence is pushed into components closer to the detector to maximize signal integrity, 2) functions are performed at the highest allowable temperatures, and 3) the electronics are designed to ensure that the intrinsic detector noise is the limiting factor for system performance. For WFIRST, the detector arrays operate at 90 to 100 K, the detector control and data acquisition functions are performed by a custom ASIC at 150 to 180 K, and the main data processing electronics are at the ambient temperature of the spacecraft, notionally approx.300 K. The new ASIC is the main interface between the cryogenic detectors and the warm instrument electronics. Its single-chip design provides basic clocking for most types of hybrid detectors with CMOS ROICs. It includes a flexible but simple-to-program sequencer, with the option of microprocessor control for more elaborate readout schemes that may be data-dependent. All analog biases, digital clocks, and analog-to-digital conversion functions are incorporated and are connected to the nearby detectors with a short cable that can provide thermal isolation. The interface to the warm electronics is simple and robust through multiple LVDS channels. It also includes features that support parallel operation of multiple ASICs to control detectors that may have more capability or requirements than can be supported by a single chip.

data acquisition↗
NASA NTRS2004

NASA Tech Briefs, July 2004

Topics: Optoelectronic Sensor System for Guidance in Docking; Hybrid Piezoelectric/Fiber-Optic Sensor Sheets; Multisensor Arrays for Greater Reliability and Accuracy; Integrated-Optic Oxygen Sensors; Ka-Band Autonomous Formation Flying Sensor; CMOS VLSI Active-Pixel Sensor for Tracking; Lightweight, Self-Deploying Foam Antenna Structures; Electrically Small Microstrip Quarter-Wave Monopole Antennas; A 2-to-28-MHz Phase-Locked Loop; Portable Electromyograph; Open-Source Software for Modeling of Nanoelectronic Devices; Software for Generating Strip Maps from SAR Data; Calibration Software for use with Jurassicprok; Software for Probabilistic Risk Reduction; Software Processes SAR Motion-Measurement Data; Improved Method of Purifying Carbon Nanotubes; Patterned Growth of Carbon Nanotubes or Nanofibers; Lightweight, Rack-Mountable Composite Cold Plate/Shelves; SiC-Based Miniature High-Temperature Cantilever Anemometer; Inlet Housing for a Partial-Admission Turbine; Lightweight Thermoformed Structural Components and Optics; Growing High-Quality InAs Quantum Dots for Infrared Lasers; Selected Papers on Protoplanetary Disks; Module for Oxygenating Water without Generating Bubbles; Coastal Research Imaging Spectrometer; Rapid Switching and Modulation by use of Coupled VCSELs; Laser-Induced-Fluorescence Photogrammetry and Videogrammetry; Laboratory Apparatus Generates Dual-Species Cold Atomic Beam; Laser Ablation of Materials for Propulsion of Spacecraft; Small Active Radiation Monitor; Hybrid Image-Plane/Stereo Manipulation; Partitioning a Gridded Rectangle into Smaller Rectangles; Digital Radar-Signal Processors Implemented in FPGAs; Part 1 of a Computational Study of a Drop-Laden Mixing Layer; and Some Improvements in Signal-Conditioning Circuits.

Source record↗
NASA NTRS2007

G4-FETs as Universal and Programmable Logic Gates

An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

Johnson, Travis↗