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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Three-Dimensional Magnetic Analysis Technique Developed for Evaluating Stirling Convertor Linear Alternators

The Department of Energy, the Stirling Technology Company (STC), and the NASA Glenn Research Center are developing Stirling convertors for Stirling radioisotope generators to provide electrical power for future NASA deep space missions. STC is developing the 55-We technology demonstration convertor (TDC) under contract to the Department of Energy. The Department of Energy recently named Lockheed Martin as the system integration contractor for the Stirling radioisotope generator development project. Lockheed Martin will develop the Stirling radioisotope generator engineering unit and has contract options to develop the qualification unit and the first flight unit. Glenn s role includes an in-house project to provide convertor, component, and materials testing and evaluation in support of the overall power system development. As a part of this work, Glenn has established an in-house Stirling research laboratory for testing, analyzing, and evaluating Stirling machines. STC has built four 55-We convertors for NASA, and these are being tested at Glenn. A cross-sectional view of the 55-We TDC is shown in the figure. Of critical importance to the successful development of the Stirling convertor for space power applications is the development of a lightweight and highly efficient linear alternator. In support, Glenn has been developing finite element analysis and finite element method tools for performing various linear alternator thermal and electromagnetic analyses and evaluating design configurations. A three-dimensional magnetostatic finite element model of STC's 55-We TDC linear alternator was developed to evaluate the demagnetization fields affecting the alternator magnets. Since the actual linear alternator hardware is symmetric to the quarter section about the axis of motion, only a quarter section of the alternator was modeled. The components modeled included the mover laminations, the neodymium-iron-boron magnets, the stator laminations, and the copper coils. The three-dimensional magnetostatic model was then coupled with a circuit simulator model of the alternator load and convertor controller. The coupled model was then used to generate alternator terminal voltage and current predictions. The predicted voltage and current waveforms agreed well with the experimental data, which tended to validate the accuracy of the coupled model. The model was then used to generate predictions of the demagnetization fields acting on the alternator magnets for the alternator under load. The preliminary model predictions indicate that the highest potential for demagnetization is along the inside surface of the uncovered magnets. The demagnetization field for the uncovered magnets when the mover is positioned at the end of a stroke is higher than it is when the mover is at the position of maximum induced voltage or maximum alternator current. Assuming normal load conditions, the model predicted that the onset of demagnetization is most likely to occur for magnet temperatures above 101 C.

Geng, Steven M.↗
DOE OSTI2024

Revealing the role of redox reaction selectivity and mass transfer in current–voltage predictions for ensembles of photocatalysts

Photocatalysts are conceptually simple reaction units where nanoscale semiconductors integrated with catalysts drive a pair of redox reactions on illumination. However, the proximity of reaction sites performing cathodic and anodic reactions poses dire challenges to realize large light-to-fuel conversion efficiencies. In this study, a powerful, yet straightforward, equivalent-circuit detail-balance modeling framework is developed and applied to evaluate the performance of photocatalytic systems featuring multiple light absorbers. Specifically, low bandgap iridium-doped strontium titanate is modeled as a Z-scheme photocatalyst to achieve desirable hydrogen evolution and iron-based redox shuttle oxidation reactions. Our model has unique capabilities to simulate competing redox reactions and address mass-transfer limitations. In a significant departure from state-of-the-art circuit models, our study develops tools to perform load-line analyses by incorporating a net electrochemical load curve that includes both desired and competing redox reactions. Consequently, reaction selectivity is predicted from equivalent circuit models for photocatalytic and photoelectrochemical systems. Our investigation into ensembles comprised of multiple, semi-transparent light absorbers reveals their potential to outperform a single, optically thick light absorber, particularly when operated under mass-transfer-limited conditions. However, this outcome hinges on minimizing mass-transfer rates of select redox species to prevent undesired reactions of hydrogen oxidation and/or redox shuttle reduction. Our findings demonstrate that reaction selectivity can be achieved by tuning asymmetry in redox species mass-transfer even with perfectly symmetric electrocatalytic charge-transfer coefficients. The influences of various kinetic, mass-transfer, and thermodynamic parameters are explored to offer crucial insights for synthesis of the next-generation of photocatalysts and selective coatings, and reactor designs.

25 ENERGY STORAGE↗
NASA NTRS1993

Robust neural classifier circuits using asynchronous design

Aerospace neural circuits must be adaptive, offer a practical size-performance ratio, and be environmentally robust. Our approach to building such circuits combines asynchronous design with a new fuzzy/neural classifier model. Asynchronous circuits offer many design advantages for neural hardware and our hybrid fuzzy/neural model, using mainly min and max operators, promises a low circuit complexity. The general approach is described and a description of a use of rule-induction to further reduce circuit complexity is described.

Hurdle, John F.↗
NASA NTRS1986

Finite element modelling of non-linear magnetic circuits using Cosmic NASTRAN

The general purpose Finite Element Program COSMIC NASTRAN currently has the ability to model magnetic circuits with constant permeablilities. An approach was developed which, through small modifications to the program, allows modelling of non-linear magnetic devices including soft magnetic materials, permanent magnets and coils. Use of the NASTRAN code resulted in output which can be used for subsequent mechanical analysis using a variation of the same computer model. Test problems were found to produce theoretically verifiable results.

Sheerer, T. J.↗
NASA NTRS2022

Space Induced Discharge Model to Be Used on Interface Circuit Vulnerability Assessment

Charging can occur in space due to plasma and high energy particles. Charging is especially severe in certain earth orbits such as geostationary orbit, medium earth orbit and highly inclined orbit. A spacecraft that travels to other planets such as Jupiter also encounters high level of charging due to Jupiter’s radiation belt. The major concern for spacecraft operation due to charging is the survival of sensitive electrical circuits. Dielectrics and floating metal can charge up and discharge onto interface circuits. The electrical circuits need to be evaluated for survival from the electrostatic-discharge (ESD) threat. Both ESD induced upset and damage need to be assessed. The interface circuits are often located inside a shielded unit in the spacecraft structure or a shielded vault with sufficient radiation shielding to avoid surface and internal charging. The materials external to the highly shielded area can charge up and discharge onto wires that can directly dissipate the ESD onto the interface circuits. Figure 1 shows a possible discharge mechanism onto the interfacing circuits. If the wire has an external shield or a coaxial line, some or most of the discharge can flow on the shield to chassis ground. There is always coupling from external discharge. If the wire has no shield, the discharge flows onto the interface circuit. Fig. 1 Possible discharge paths onto the interface circuits. The purpose of this article is to address how to model the ESD threat to be used as the discharge source onto the interface circuit based on the electron beam test data. Different models are needed for different impedances associated with the interface circuits. Once those models are derived, one needs to analyze the interface circuit with the corresponding model using an electrical simulation tool. Then, the circuit’s front-end components can be assessed for damage and upset. Upset is highly dependent on the circuit operation and system requirements, and thus it is not addressed any further. Damage of electrical parts is often rated under Human-Body-Model (HBM) ESD. One can utilize this industry-wide available information to assess the damage vulnerability due to space discharges. However, the HBM waveform does not always match the discharge waveform. To estimate the damage vulnerability of the circuit and set margin, one needs to compare the equivalent energy delivered to the victim between a HBM discharge and the results from an ESD source model based on actual discharges. This paper presents such a comparison for a few select cases.

Xie, Julie↗
DOE OSTI2022

Analysis of Defect Irrelevancy in a Non-Insulated REBCO Pancake Coil Using an Electric Network Model

High-temperature superconducting REBCO coated conductor is one of the main candidates for next-generation high field magnets in fusion reactors and particle accelerators owing to their high current-carrying capability. Although these materials can operate at higher temperatures and generate higher magnetic fields than their counterparts with lower critical temperatures, protecting the REBCO magnet against quench is challenging. A variety of candidate technologies that may be able to enable self-protection, including no-insulation technology and insulative coatings with temperature-dependent resistance, are in development. Here, in order to understand current sharing and thermal processes during a quench, we model a REBCO pancake coil as an electrical circuit, considering power generation and heat transfer along conductor turns, and study the current distribution around a local defect with lower critical current. The magnetic field and coil terminal voltage predicted by the simulation was compared to published experimental results. Our results provide useful insights into how current sharing occurs around defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1990

Model authoring system for fail safe analysis

The Model Authoring System is a prototype software application for generating fault tree analyses and failure mode and effects analyses for circuit designs. Utilizing established artificial intelligence and expert system techniques, the circuits are modeled as a frame-based knowledge base in an expert system shell, which allows the use of object oriented programming and an inference engine. The behavior of the circuit is then captured through IF-THEN rules, which then are searched to generate either a graphical fault tree analysis or failure modes and effects analysis. Sophisticated authoring techniques allow the circuit to be easily modeled, permit its behavior to be quickly defined, and provide abstraction features to deal with complexity.

Sikora, Scott E.↗
NASA NTRS2012

Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.

Akturk, Akin↗
DOE OSTI2021

Bethe Ansatz solutions for certain Periodic Quantum Circuits

I derived Bethe Ansatz equations for two model Periodic Quantum Circuits: (1) XXZ model; (2) Chiral Hubbard Model. I obtained explicit expressions for the spectra of the strings of any length. These analytic results may be useful for calibration and error mitigations in modern engineered quantum platforms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1991

Electromechanical simulation and testing of actively controlled rotordynamic systems with piezoelectric actuators

Theoretical developments for the simulation of an actively controlled rotorbearing system with piezoelectric type actuators are summarized. Two simulation models were derived; the first assumes that the actuators and other electrical components in the feedback system operate at all frequencies without phase lag or rolloff, while the second model includes the nonideal behavior of these components which are modeled with linear electric circuits. The two models predict identical unbalance response at low frequencies, and the nonideal model also predicts instability-onset feedback gains. The agreement between the measured and predicted results for unbalance response and instability onset gain is very good. The predicted instability-onset feedback gain for active damping was found to be very sensitive to the tare (uncontrolled) damping in the unstable mode.

Lin, Reng R.↗
NASA NTRS2005

Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM

As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.

CMOS integrated circuits↗
NASA NTRS1991

Optimization of transistor design including large signal device/circuit interactions at extremely high frequencies (20-100+GHz)

Transistor design for extremely high frequency applications requires consideration of the interaction between the device and the circuit to which it is connected. Traditional analytical transistor models are to approximate at some of these frequencies and may not account for variations of dopants and semiconductor materials (especially some of the newer materials) within the device. Physically based models of device performance are required. These are based on coupled systems of partial differential equations and typically require 20 minutes of Cray computer time for a single AC operating point. A technique is presented to extract parameters from a few partial differential equation solutions for the device to create a nonlinear equivalent circuit model which runs in approximately 1 second of personal computer time. This nonlinear equivalent circuit model accurately replicates the contact current properties of the device as computed by the partial differential solver on which it is based. Using the nonlinear equivalent circuit model of the device, optimization of systems design can be performed based on device/circuit interactions.

Levy, Ralph↗
DOE OSTI2020

Improved Frequency-Domain Steady-State Modeling of the Dual-Active-Bridge Converter Considering Finite ZVS Transition Time Effects

This article presents an improved analytical modeling (IAM) approach for the dual-active-bridge (DAB) converter in the frequency-domain. Specifically, finite transition times are incorporated into the improved modeling that are significant in DAB converters operated at high frequency. The IAM approach is first motivated by comparing traditional frequency-domain modeling against realistic simulation results in LTspice. Next, the IAM approach is mathematically developed in an iterative fashion, where the conventional frequency-domain approach is used as the initialization of the operational behavior of the converter. Subsequent iterations of the IAM algorithm incorporate finite rise- and falltimes of device output capacitances based on detailed switching behavior analyses, which may considerably perturb the desired modulation parameters (i.e., phase shift and zero states). While the initially proposed IAM approach demonstrates advantages over ideal modeling, it is still shown to exhibit errors when applied to device transitions with significant nonlinearity in parasitic output capacitance. To account for this, a three-slope approximation to the switching transition is then motivated and developed, which enables significantly improved steady-state prediction accuracy. Simulation and experimental results confirm unacceptable inaccuracies associated with the conventional frequency-domain modeling across a wide range of operating conditions, alongside enhanced accuracy provided by the proposed modeling approach.

14 SOLAR ENERGY↗
NASA NTRS1992

Changes in impedance of Ni/Cd cells with voltage and cycle life

Impedances of aerospace design Super Ni/Cd cells are being measured as functions of voltage and number of cycles. The cells have been cycled over 4400 cycles to date. Analysis of the impedance data has been made using a number of equivalent circuits. The model giving the best fit over the whole range of voltage has a parallel circuit of a kinetic resistance and a constant phase element in series with the ohmic resistance. The values for the circuit elements have been treated as empirical parameters, and no attempt has been made as yet to correlate them with physical and chemical changes in the electrode. No significant changes have been seen as yet with the exception of a decrease in kinetic resistance at low states of charge in the first 500 cycles.

Reid, Margaret A.↗
NASA NTRS1995

Simple Spreadsheet Thermal Models for Cryogenic Applications

Self consistent circuit analog thermal models that can be run in commercial spreadsheet programs on personal computers have been created to calculate the cooldown and steady state performance of cryogen cooled Dewars. The models include temperature dependent conduction and radiation effects. The outputs of the models provide temperature distribution and Dewar performance information. these models have been used to analyze the SIRTF Telescope Test Facility (STTF). The facility has been brought on line for its first user, the Infrared Telescope Technology Testbed (ITTT), for the Space Infrared Telescope Facility (SIRTF) at JPL. The model algorithm as well as a comparison between the models' predictions and actual performance of this facility will be presented.

spreadsheet thermal model cryogenic↗
NASA NTRS1994

(abstract) Simple Spreadsheet Thermal Models for Cryogenic Applications

Self consistent circuit analog thermal models, that can be run in commercial spreadsheet programs on personal computers, have been created to calculate the cooldown and steady state performance of cryogen cooled Dewars. The models include temperature dependent conduction and radiation effects. The outputs of the models provide temperature distribution and Dewar performance information. These models have been used to analyze the Cryogenic Telescope Test Facility (CTTF). The facility will be on line in early 1995 for its first user, the Infrared Telescope Technology Testbed (ITTT), for the Space Infrared Telescope Facility (SIRTF) at JPL. The model algorithm as well as a comparison of the model predictions and actual performance of this facility will be presented.

cryogenic thermal model cryostat SIRTF↗