Study of radiation effects in Li-doped silicon solar cells Quarterly report
Irradiation and annealing of lithium doped silicon solar cells
Carter, J. R.↗
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Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice
We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.
VanKeuls, F. W.↗
Narrowing the band gap and suppressing electron–hole recombination in β-Fe 2 O 3 by chlorine doping
Here, the effects of halogen (F, Cl, Br, I, and At) doping in the direct-band-gap β-Fe 2 O 3 semiconductor on its band structures and electron–hole recombination have been investigated by density functional theory. Doping Br, I, and At in β-Fe 2 O 3 leads to transformation from a direct-band-gap semiconductor to an indirect-band-gap semiconductor because their atomic radii are too large; however, F- and Cl-doped β-Fe 2 O 3 remain as direct-band-gap semiconductors. Due to the deep impurity states of the F dopant, this study focuses on the effects of the Cl dopant on the band structures of β-Fe 2 O 3 . Two impurity levels are introduced when Cl is doped into β-Fe 2 O 3 , which narrows the band gap by approximately 0.3 eV. After doping Cl, the light-absorption edge of β-Fe 2 O 3 redshifts from 650 to 776 nm, indicating that its theoretical solar to hydrogen efficiency for solar water splitting increases from 20.6% to 31.4%. In addition, the effective mass of the holes in halogen-doped β-Fe 2 O 3 becomes significantly larger than that in undoped β-Fe 2 O 3 , which may suppress electron–hole recombination.
30 DIRECT ENERGY CONVERSION↗
Effect of V{sub Zn}/V{sub O} on Stability, Magnetism, and Electronic Characteristic of Oxygen Ions for Li-Doped ZnO
The effects of Zn/O vacancy (V{sub Zn}/V{sub O}) and different proportions of Li/V{sub Zn} on the magnetism of Li-doped ZnO are analyzed through first-principle calculation by using generalized gradient approximation+ U (GGA + U) under density functional theory. Results reveal that Li-doped ZnO with V{sub Zn} can realize ferromagnetic long-range order and has a Curie temperature above room temperature. Under different proportions of Li/V{sub Zn} (i.e., 1:1, 1:2, and 2:2) in ZnO (2 × 2 × 4), the doping system containing 2Li/2V{sub Zn} (Zn{sub 28}Li{sub 2}O{sub 32}) shows the greatest magnetic moment and the smallest differential charge density. These characteristics pave the way for enhancing the magnetic properties of dilute magnetic semiconductors. The oxygen atoms in Zn{sub 28}Li{sub 2}O{sub 32} show acceptor and donor characteristics and exist in the forms of itinerant electrons (O{sup 1−}) and local electrons (O{sup 2−}), which have different effects on Zn{sub 28}Li{sub 2}O{sub 32} magnetism. The spin-polarization double-exchange effect among the unpaired itinerant electron (O{sup 1−}) orbit, local electron (O{sup 2−}) orbit, and unpaired Zn-3d electron orbit is the origin of magnetism for Li-doped ZnO with V{sub Zn}. By contrast, the doping systems of Li-doped ZnO with V{sub O} are nonmagnetic, rendering such systems inapplicable.
36 MATERIALS SCIENCE↗
A Comparison Study of the Effects of Ba and La Doping in Sr{sub 2}IrO{sub 4}: Ir–O–Ir Bond Angle and Carrier Concentration
We perform a systematic investigation on the effects of Ba and La doping on the lattice and transport properties of Sr{sub 2}IrO{sub 4}, which is theoretically predicted to be a host compound of high-temperature superconductivity. We observe a drastic straightening of the Ir–O–Ir bond angle in the Ba-doped samples. The straightening of the bond angle is much weaker in the La-doped samples. It is found that the La doping leads to the introduction of electron-type charge carriers, while the charge carrier concentration does not change too much in the Ba-doped samples. As a result, both the resistivity and the magnetic moments decrease much faster in the La-doped samples, compared to those in the Ba-doped samples. The present results suggest that it is the charge carrier density rather than the Ir–O–Ir bond angle that dominates the magnetic and transport properties of the Sr{sub 2}IrO{sub 4} system.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Enhanced Photocatalytic Degradation of Methylene Blue Dye, Opto-magnetic and Antibacterial Behaviour of Pure and La-doped ZnO Nanoparticles
The different doping concentrations of lanthanum (La)-doped ZnO nanoparticles were synthesized successfully using zinc acetate and lanthanum nitrate via wet chemical method. Characterization of the prepared sample was done by standard analytical techniques such as powder x-ray diffraction analysis (P-XRD), high-resolution scanning electron microscopy (HR-SEM), energy-dispersive spectroscopy (EDS), Fourier transformer-infrared (FT-IR) spectroscopy, photoluminescence (PL) and UV-Vis spectroscopy (UV-Vis), and magnetic studies (VSM). The structural analysis has been carried out by powder x-ray diffraction. X-ray diffraction studies revealed that the nanoparticles are well-crystalline and possess hexagonal wurtzite structure. HR-SEM images showed the homogenous spherical-shaped morphology of the synthesized ZnO nanoparticles. EDS analysis confirmed the presence of La ions into ZnO lattice. The band gap (Eg) energy was determined by UV-Visible spectral data, and it was found that the Eg value decreases with increasing the La concentration into ZnO lattice. PL spectra confirmed that the effective La doping enhance the UV and visible region near band gap emission. The effect of La doping on the photocatalytic activity of ZnO nanoparticles for the degradation of methylene blue dye was studied under solar illumination and the results showed that the La doping kindles appreciable degradation of MB. The optical density measurements of the ZnO nanoparticles against both gram-positive (Bacillus subtilis, Staphylococcus aureus) as well as gram-negative bacteria (Proteus mirabilis, Salmonella typhi) showed better bacterial activity than pure ZnO. Moreover, it showed that higher dopant La in ZnO exhibit efficient antibacterial activity.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells
CdTe solar cell technology is one of the lowest-cost methods of generating electricity in the solar industry, benefiting from fast CdTe absorber deposition, CdCl 2 treatment and Cu doping. However, Cu doping has low photovoltage and issues with instability. Doping group V elements into CdTe is therefore a promising route to address these challenges. Although high-temperature in situ group V doped CdSeTe devices have demonstrated efficiencies exceeding 20%, they face obstacles including post-deposition doping activation processes, short carrier lifetimes and low activation ratios. Here, we demonstrate low-temperature and effective ex situ group V doping for CdSeTe solar cells using group V chlorides. For AsCl 3 doped CdSeTe solar cells, the dopant activation ratio can be 5.88%, hole densities reach >2 × 10 15 cm -3 and carrier lifetime is longer than 20 ns. Thus, ex situ As doped CdSeTe solar cells show open-circuit voltages ~863 mV, compared to the highest open-circuit voltage of 852 mV for Cu doped CdSeTe solar cells.
14 SOLAR ENERGY↗
Doping liquid argon with xenon in ProtoDUNE Single-Phase: effects on scintillation light
Doping of liquid argon TPCs (LArTPCs) with a small concentration of xenon is a technique for light-shifting and facilitates the detection of the liquid argon scintillation light. In this paper, we present the results of the first doping test ever performed in a kiloton-scale LArTPC. From February to May 2020, we carried out this special run in the single-phase DUNE Far Detector prototype (ProtoDUNE-SP) at CERN, featuring 720 t of total liquid argon mass with 410 t of fiducial mass. A 5.4 ppm nitrogen contamination was present during the xenon doping campaign. The goal of the run was to measure the light and charge response of the detector to the addition of xenon, up to a concentration of 18.8 ppm. The main purpose was to test the possibility for reduction of non-uniformities in light collection, caused by deployment of photon detectors only within the anode planes. Light collection was analysed as a function of the xenon concentration, by using the pre-existing photon detection system (PDS) of ProtoDUNE-SP and an additional smaller set-up installed specifically for this run. In this paper we first summarize our current understanding of the argon-xenon energy transfer process and the impact of the presence of nitrogen in argon with and without xenon dopant. We then describe the key elements of ProtoDUNE-SP and the injection method deployed. Two dedicated photon detectors were able to collect the light produced by xenon and the total light. The ratio of these components was measured to be about 0.65 as 18.8 ppm of xenon were injected. We performed studies of the collection efficiency as a function of the distance between tracks and light detectors, demonstrating enhanced uniformity of response for the anode-mounted PDS. We also show that xenon doping can substantially recover light losses due to contamination of the liquid argon by nitrogen.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
In-situ IR Spectroscopy Study of Reactions of C3 Oxygenates on Heteroatom (Sn, Mo, and W) doped BEA Zeolites and the Effect of Co-adsorbed Water
The reactions of acetone and hydroxyacetone over heteroatom doped BEA zeolites (Sn, Mo, and W) in the presence and absence of H 2 O vapor are investigated using infrared spectroscopy. Acetone is converted to mesityl oxide over Sn-BEA exclusively. At higher temperatures, larger oxygenates such as phorones, aromatics, and coke form. The presence of co-adsorbed water in Sn-BEA suppresses tautomerization. H 2 O vapor is also beneficial for minimizing coke formation at high temperatures. Hydroxyacetone is converted into 2-hydroxypropanal over Sn-BEA, exhibiting high affinity to Sn sites up to 400 °C. Sn-BEA catalyzes conversion of hydroxyacetone into the enol in the absence of H 2 O, but exposure to H 2 O induces the formation of 2-hydroxypropanal and subsequent conversion to acrolein. Furthermore, the Lewis acid descriptors are used to rationalize the reaction pathways. For the isomerization of hydroxyacetone into 2-hydroxypropanal, the hardness of acid sites influences the reaction and correlates with the overall Lewis acidity of the catalysts, respectively. However, the size of the exchanged metal significantly affects aldol condensation, where keto and enol forms of acetone adsorb to active sites simultaneously.
36 MATERIALS SCIENCE↗
Statistical 3D 'Atomistic' Simulation of Decanano MOSFETs
A 3D statistical 'atomistic' simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the 'atomistic' simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architectures utilising epitaxial-layers and delta-doping. The effect of the random doping in the polysilicon gate on the threshold voltage fluctuations has also been thoroughly investigated. The influence of a single-charge trapping on the channel conductivity in decanano MOSFETs is studied in the 'atomistic' framework as well. Quantum effects are taken into consideration in our 'atomistic' simulations using the density gradient formalism.
Asenov, Asen↗
Doping-Induced Interband Gain in InAs/AlSb Quantum Wells
A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers. Heretofore, InAs/AlSb QWs have not been useful as interband gain devices because they have type-II energy-band-edge alignment, which causes spatial separation of electrons and holes, thereby leading to weak interband dipole matrix elements. In the doping schemes studied, an interior sublayer of each AlSb layer was doped at various total areal densities up to 5 X 10(exp 12) / square cm. It was found that (1) proper doping converts the InAs layer from a barrier to a well for holes, thereby converting the heterostructure from type II to type I; (2) the resultant dipole matrix elements and interband gains are comparable to those of typical type-I heterostructures; and (3) dipole moments and optical gain increase with the doping level. Optical gains in the transverse magnetic mode can be almost ten times those of other semiconductor material systems in devices used to generate medium-wavelength infrared (MWIR) radiation. Hence, doped InAs/AlSb QWs could be the basis of an alternative material system for devices to generate MWIR radiation.
Kolokolov, K. I.↗
STRUCTURE AND PROPERTIES STUDY ON ENERGY MATERIALS: THERMOELECTRIC MATERIAL TETRAHEDRITE AND LITHIUM ION CONDUCTOR LiPON
Development of efficient energy materials is critical in order to ease the energy demand and reduce our dependence of fossil fuel. Thermoelectric materials are promising due to their capability of generating electrical power by recovering waste heat. The performance of thermoelectric materials is quantified by a dimensionless figure of merit zT, which depends on their properties such as electrical conductivity, Seebeck coefficient and thermal conductivity. Tetrahedrites, a copper antimony sulfosalt mineral, typified by Cu12-xMxSb4S13, where M is a transition metal element such as Ni, Zn, Fe or Mn, have great potential for thermoelectric application due to their relatively high zT (close to 1 at 700 K), earth-abundance, environmental friendliness, favorable electrical properties, and most importantly intrinsic low lattice thermal conductivity (less than 1 W m-1 K-1) in wide temperature. In addition to energy recovery, reliable energy storage devices are also emerging to relieve the energy demand and improve the efficiency of consuming energy resources. Lithium-ion batteries are known to be reliable and successful electrochemical energy storage devices and appliable in various aspects, including laptops, smartphones and electrical vehicles. Lithium phosphorous oxynitride (LiPON) are widely used as thin-film solid-state electrolytes in Li-ion battery, which is the only demonstrated solid-state electrolyte that is quite stable in direct contact with Li metal at potentials from 0-5 V. However, the structure of LiPON, the effects of N doping, and the origin of its good electrochemical stability remains inconclusive.In this thesis, reliable modeling techniques accompanied with experimental tools, are applied to study the thermoelectric material tetrahedrite and the ionic conductor LiPON, in order to study their structural and dynamical properties. Accurate and efficient density-functional theory (DFT) and density-functional tight-binding (DFTB) methods, combined with molecular dynamics (MD) simulations are utilized in order to investigate the structures and properties of these energy materials. The incoherent and coherent atomic dynamics study of tetrahedrite Cu10.5NiZn0.5Sb4S13 provides the origin of softening upon cooling by investigate the motion of Cu12e at different temperatures. The dynamic structure factors in the longitudinal and transverse direction will also be discussed. The Cu movement of Cu-rich tetrahedrite Cu14Sb4S13 is revealed by Cu self-diffusivity, nuclear density map and "nudged elastic band" (NEB). Moreover, we investigate the effect of simulation cell size and basis sets on the DFT-based MD simulation results using tetrahedrite Cu10Zn2Sb4S13 thermoelectric as a model material, showing the advantage of larger cell by accessing smaller Q range. In addition, the low-temperature structural properties of Cu12Sb4S13 is measured by neutron diffraction, which indicates that no cubic to tetragonal transition occurs at metal-semiconductor transition (MST) temperature. Thermoelectric properties such as Seebeck coefficient, electrical resistivity and electrical thermal conductivity will also be investigated. DFTB method is implemented to study the structure and transport properties of Li3PO4 and LiPON, while the exploration of N doping effect is included. Lastly, the LiPON/Li interphase will be revealed in order to study the origin of electrochemical stability
25 ENERGY STORAGE↗
STRUCTURE AND PROPERTIES STUDY ON ENERGY MATERIALS: THERMOELECTRIC MATERIAL TETRAHEDRITE AND LITHIUM ION CONDUCTOR
Development of efficient energy materials is critical in order to ease the energy demand and reduce our dependence of fossil fuel. Thermoelectric materials are promising due to their capability of generating electrical power by recovering waste heat. The performance of thermoelectric materials is quantified by a dimensionless figure of merit zT, which depends on their properties such as electrical conductivity, Seebeck coefficient and thermal conductivity. Tetrahedrites, a copper antimony sulfosalt mineral, typified by Cu 12-x MxSb 4 S 13 , where M is a transition metal element such as Ni, Zn, Fe or Mn, have great potential for thermoelectric application due to their relatively high zT (close to 1 at 700 K), earth-abundance, environmental friendliness, favorable electrical properties, and most importantly intrinsic low lattice thermal conductivity (less than 1 W m -1 K -1 ) in wide temperature. In addition to energy recovery, reliable energy storage devices are also emerging to relieve the energy demand and improve the efficiency of consuming energy resources. Lithium-ion batteries are known to be reliable and successful electrochemical energy storage devices and appliable in various aspects, including laptops, smartphones and electrical vehicles. Lithium phosphorous oxynitride (LiPON) are widely used as thin-film solid-state electrolytes in Li-ion battery, which is the only demonstrated solid-state electrolyte that is quite stable in direct contact with Li metal at potentials from 0-5 V. However, the structure of LiPON, the effects of N doping, and the origin of its good electrochemical stability remains inconclusive. In this thesis, reliable modeling techniques accompanied with experimental tools, are applied to study the thermoelectric material tetrahedrite and the ionic conductor LiPON, in order to study their structural and dynamical properties. Accurate and efficient density-functional theory (DFT) and density-functional tight-binding (DFTB) methods, combined with molecular dynamics (MD) simulations are utilized in order to investigate the structures and properties of these energy materials. The incoherent and coherent atomic dynamics study of tetrahedrite Cu 10.5 NiZn 0.5 Sb 4 S 13 provides the origin of softening upon cooling by investigate the motion of Cu12e at different temperatures. The dynamic structure factors in the longitudinal and transverse direction will also be discussed. The Cu movement of Cu-rich tetrahedrite Cu 14 Sb 4 S 13 is revealed by Cu self-diffusivity, nuclear density map and “nudged elastic band” (NEB). Moreover, we investigate the effect of simulation cell size and basis sets on the DFT-based MD simulation results using tetrahedrite Cu1 0 Zn 2 Sb 4 S 13 thermoelectric as a model material, showing the advantage of larger cell by accessing smaller Q range. In addition, the low-temperature structural properties of Cu 12 Sb 4 S 13 is measured by neutron diffraction, which indicates that no cubic to tetragonal transition occurs at metal-semiconductor transition (MST) temperature. Thermoelectric properties such as Seebeck coefficient, electrical resistivity and electrical thermal conductivity will also be investigated. DFTB method is implemented to study the structure and transport properties of Li 3 PO 4 and LiPON, while the exploration of N doping effect is included. Lastly, the LiPON/Li interphase will be revealed in order to study the origin of electrochemical stability.
Li, Junchao↗
Influence of dopant size and electron affinity on the electrical conductivity and thermoelectric properties of a series of conjugated polymers
Here, chemical doping is widely used to manipulate the electrical and thermoelectric properties of organic semiconductors, yet intelligent design of polymer–dopant systems remains elusive. It is challenging to predict the electrical and thermoelectric properties of doped organic semiconductors due to the large number of variables impacting these properties, including film morphology, dopant and polymer energetics, dopant size, and degree of polaron delocalization. Herein, a series of dopants with varying sizes and electron affinities (EAs) are combined with polymers of differing ionization energies (IEs) to investigate how the difference between polymer IE and dopant EA influences the doping efficiency and electrical conductivity, and how the dopant size influences the thermoelectric properties. Our experiments demonstrate that at low doping levels the doping efficiency strongly depends on the difference between the polymer IE and dopant EA; the effectiveness of doping on increasing electrical conductivity drastically decreases at high loadings for the molybdenum dithiolene complexes, while FeCl 3 remains effective at high loadings; and the large molybdenum complexes lead to more delocalized polarons as compared to FeCl 3 . To take advantage of the complementary doping characteristics of the molybdenum complexes and FeCl 3 , both dopants are employed simultaneously to reach high power factors at relatively low dopant concentrations.
36 MATERIALS SCIENCE↗
Effect of Electropolishing on Nitrogen Doped and Undoped Niobium Surfaces
Cold electropolishing (EP) of a nitrogen-doped (N-doped) niobium (Nb) superconducting RF (SRF) cavity was found to improve its quality factor. In order to understand the effect of EP temperature on N-doped and undoped surfaces, a systematic EP study was conducted with 2/0 N-doped and heat-treated Nb samples in a beaker. The Nb samples were electropolished at different surface temperatures ranging from 0 to 42 C. The results showed that the doped surface was susceptible to the sample temperature during EP. EP resulted in the surface pitting on the doped samples where the number density of pits increased at a higher temperature. The surface results were compared with the surface of cutouts from a 9-cell cavity which was 2/0 N-doped and electropolished. This paper shows de-tailed surface features of the N-doped and undoped Nb surfaces electropolished at different temperatures.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Dilute magnetic impurity-induced effective phonon magnetic moment in Fe-doped monolayer MoS 2
Realization of large effective phonon magnetic moment in monolayer MoS 2 has established an important route for exploring intriguing magnetic phenomena in a nonmagnetic material. The sizable coupling between the orbital transition and the circularly polarized phonon results in the large effective phonon magnetic moment. In this work, using magneto-Raman spectroscopy, we investigate substitutional doping of magnetic atoms as a tuning knob of the electronic and phononic properties of MoS 2 . We show that Fe-doping polarizes the spin of the conduction bands and introduces a localized Fe band underneath the conduction band. As a result, an additional orbital transition between the Mo 4d and Fe 3d states emerges, producing an orbital-phonon hybridized mode at 283 cm −1 . Our magnetic field dependent measurements demonstrate that this new mode carries 2.8 $\mu_{\mathrm{B}}$ effective phonon magnetic moment, which is comparable to that of the undoped MoS 2 . Moreover, even though a long-range magnetic order is absent in Fe-doped MoS 2 , the local magnetic moment of Fe modifies the nature of the spin fluctuation, producing monotonically increasing quasielastic scattering spectral weight as temperature decreases. Our results highlight two-dimensional dilute magnetic semiconductors synthesized by substitutional doping as a promising material platform to manipulate the phonon magnetic moment through orbital-phonon coupling.
36 MATERIALS SCIENCE↗
Realization of higher thermoelectric performance by dynamic doping of copper in n-type PbTe
It is a great challenge to optimize a material's thermoelectric performance due to the strong correlation between its thermoelectric-transport properties, especially the electrical-transport properties. Optimizing the peak zT using a constant carrier concentration is commonly adopted because of the difficulty in realizing the optimum temperature-dependent carrier concentration, but this is not meaningful for real applications, in which the average zT value over the working temperature range is much more important. Here we propose an effective strategy involving the dynamic doping effect of interstitial Cu atoms to fully optimize the electrical-transport properties of n-type PbTe over a wide temperature range. By using Cu intercalation, the temperature-dependent carrier concentration of PbTe is found to well match the theoretically optimal profile. Furthermore, high carrier mobility is largely maintained because the dynamic behavior of the interstitial Cu does not alter the band structure and therefore change the effective mass. Consequently, a peak zT of ~1.3 and a calculated leg efficiency of 12% were achieved for the sample with 0.2 at% Cu. Based on our findings, we further proposed a concept of ‘interstitial engineering’ to reinforce the dynamic doping effect, which is of fundamental importance for optimizing the thermoelectric properties.
25 ENERGY STORAGE↗