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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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309 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Controllable synthesis of ultra-long YCexOy:Eu3+ nanowire arrays and fluorescence activation of Ce3+

Highlights: • Ultra-long YCe{sub x}O{sub y}:Eu{sup 3+} nanowire arrays is realized by controllable synthesis. • Ce{sup 3+} ion dominates the fluorescence activation in YCe{sub x}O{sub y}:Eu{sup 3+} nanowire arrays. • Fluorescence emission in red light area is useful in medical image or cell labeling. - Abstract: Ultra-long YCe{sub x}O{sub y}:Eu{sup 3+} nanowire arrays(NWAs) have been synthesized in anodic aluminum oxide (AAO) templates by chemical co-deposition at negative pressure suction, which are amorphous, and possess precise dimension and homogeneous morphologies. The SEM, TEM, XRD and EDS were employed to investigate the morphology, structure and elemental composition of YCe{sub x}O{sub y}:Eu{sup 3+} NWAs. The fluorescence properties of the YCe{sub x}O{sub y}:Eu{sup 3+} NWAs were measured by fluorescence spectrometer (PerkinElmer LS-55) using Xenon discharge lamp as the excitation light source. There are two emission peaks at 615 nm and 702 nm with excitation wavelength of 394 nm, which corresponds to the {sup 5}D{sub 0}-{sup 2}F{sub 2} and {sup 5}D{sub 0}-{sup 7}F{sub 4} energy level transition of Eu{sup 3+}, respectively. The fluorescence intensity of YCe{sub x}O{sub y}:Eu{sup 3+} NWAs is related to the doping concentration of Eu{sup 3+} ion, which reaches a maximum with doping concentration of Eu{sup 3+} at 8%, and remarkably decreases at higher concentrations. Ce{sup 3+} ion dominates the fluorescence activation in YCe{sub x}O{sub y}:Eu{sup 3+} NWAs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Evaluation of an event-driven 3FI ASIC for spectroscopic X-ray detection with synchrotron radiation

The novel design and evaluation on the NSLS-II beamline of the 3FI application-specific integrated circuit (ASIC) bump-bonded to a simple, planar, 2D segmented silicon sensor are presented. The ASIC was developed for full-field fluorescence spectral X-ray imaging (3FI). It is a small-scale prototype that features a square array of 32 × 32 pixels, and the size of the pixels is 100 µm × 100 µm. The ASIC was implemented in a 65 nm CMOS integrated circuit fabrication process. Each pixel incorporates a charge-sensitive amplifier, a shaping filter, a discriminator, a peak detector and a sample-and-hold circuit, allowing detection of events and storage of signal amplitudes. The system operates in a frameless event-driven readout mode, outputting analog values for threshold-triggered events, allowing high-speed multi-element X-ray fluorescence data acquisition. The 3FI ASIC achieves per-channel spectrometric performance at a power consumption of only 200 µW per pixel, with nearly all dissipation confined to the analog front-end. An energy resolution is measured at the level of 308 eV full width at half-maximum (FWHM) at 8.04 keV (Cu Kα), and 138 eV FWHM at 3.69 keV (Ca Kα). This per-pixel capability makes the prototype suitable for in situ trace element microanalysis in biological and environmental studies. Moreover, the frameless architecture of the detector is designed to address limitations of conventional X-ray fluorescence microscopy, which typically requires mechanical scanning, by enabling continuous high-throughput data acquisition in future full-field implementations.

47 OTHER INSTRUMENTATION↗
NASA NTRS2014

AE (Acoustic Emission) for Flip-Chip CGA/FCBGA Defect Detection

C-mode scanning acoustic microscopy (C-SAM) is a nondestructive inspection technique that uses ultrasound to show the internal feature of a specimen. A very high or ultra-high-frequency ultrasound passes through a specimen to produce a visible acoustic microimage (AMI) of its inner features. As ultrasound travels into a specimen, the wave is absorbed, scattered or reflected. The response is highly sensitive to the elastic properties of the materials and is especially sensitive to air gaps. This specific characteristic makes AMI the preferred method for finding "air gaps" such as delamination, cracks, voids, and porosity. C-SAM analysis, which is a type of AMI, was widely used in the past for evaluation of plastic microelectronic circuits, especially for detecting delamination of direct die bonding. With the introduction of the flip-chip die attachment in a package; its use has been expanded to nondestructive characterization of the flip-chip solder bumps and underfill. Figure 1.1 compares visual and C-SAM inspection approaches for defect detection, especially for solder joint interconnections and hidden defects. C-SAM is specifically useful for package features like internal cracks and delamination. C-SAM not only allows for the visualization of the interior features, it has the ability to produce images on layer-by-layer basis. Visual inspection; however, is only superior to C-SAM for the exposed features including solder dewetting, microcracks, and contamination. Ideally, a combination of various inspection techniques - visual, optical and SEM microscopy, C-SAM, and X-ray - need to be performed in order to assure quality at part, package, and system levels. This reports presents evaluations performed on various advanced packages/assemblies, especially the flip-chip die version of ball grid array/column grid array (BGA/CGA) using C-SAM equipment. Both external and internal equipment was used for evaluation. The outside facility provided images of the key features that could be detected using the most advanced C-SAM equipment with a skilled operator. Investigation continued using in-house equipment with its limitations. For comparison, representative X-rays of the assemblies were also gathered to show key defect detection features of these non-destructive techniques. Key images gathered and compared are: Compared the images of 2D X-ray and C-SAM for a plastic LGA assembly showing features that could be detected by either NDE technique. For this specific case, X-ray was a clear winner. Evaluated flip-chip CGA and FCBGA assemblies with and without heat sink by C-SAM. Only the FCCGA package that had no heat sink could be fully analyzed for underfill and bump quality. Cross-sectional microscopy did not revealed peripheral delamination features detected by C-SAM. Analyzed a number of fine pitch PBGA assemblies by C-SAM. Even though the internal features of the package assemblies could be detected, C-SAM was unable to detect solder joint failure at either the package or board level. Twenty times touch ups by solder iron with 700degF tip temperature, each with about 5 second duration, did not induce defects to be detected by C-SAM images. Other techniques need to be considered to induce known defects for characterization. Given NASA's emphasis on the use of microelectronic packages and assemblies and quality assurance on workmanship defect detection, understanding key features of various inspection systems that detect defects in the early stages of package and assembly is critical to developing approaches that will minimize future failures. Additional specific, tailored non-destructive inspection approaches could enable low-risk insertion of these advanced electronic packages having hidden and fine features.

Ghaffarian, Reza↗