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Advances in SIS receiver technology

Significant advances in SIS receiver technology since the last Asilomar meeting include: superconductor materials, integrated inductive tuning elements, and planar mounting structures. The effect of these advances is to push the upper frequency operating limit from about 600 to 1500 GHz, and to enhance the feasibility of focal plane arrays of heterodyne receivers. A fundamental high frequency operating limit of SIS mixers is set by the superconducting energy gap. A practical limitation for high frequency operation of SIS junctions is their parasitic capacitance and resistance. The performance of the mixer will be degraded by the Resistor-Capacitor rolloff. Several designs were reported for inductive elements integrated on the same substrate as the SIS junctions to tune out the bulk junction capacitance. Most millimeter SIS-based heterodyne receivers have used waveguide coupling structures. Technology has advanced to the state where programs that have a high probability of success can be defined to produce arrays of SIS receivers for frequencies as high as 1500 GHz.

Frerking, M. A.↗

Low noise HgCdTe 128 x 128 SWIR FPA for Hubble space telescope

Large area focal plane arrays of unprecedented performance were developed for use in Near Infrared Camera and Multi-Object Spectrometer (NICMOS), a proposed Hubble Space Telescope refurbishment instrument. These FPAs are 128x128-element, HgCdTe hybrid arrays with a cutoff wavelength of 2.5 microns. The multiplexer consists of a CMOS field effect transistor switch array with a typical mean readout noise of less than 30 electrons. The detectors typically have a mean dark current of less than 10 electrons/s at 77 K, with currents below 2 electrons measured at 60 K (both at 0.5 V reverse bias). The mean quantum efficiency is 40 to 60 percent at 77 K for 1.0 to 2.4 microns. Functional pixel yield is typically greater than 99 percent, and the power consumption is approximately 0.2 mW (during readout only).

Blessinger, Michael↗

HgCdTe 256x256 NWIR FPA

Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

Vural, Kadri↗

Imaging spectrometry - Technology and applications

The development history and current status of NASA imaging-spectrometer (IS) technology are discussed in a review covering the period 1982-1988. Consideration is given to the Airborne IS first flown in 1982, the second-generation Airborne Visible and IR IS (AVIRIS), the High-Resolution IS being developed for the EOS polar platform, improved two-dimensional focal-plane arrays for the short-wave IR spectral region, and noncollinear acoustooptic tunable filters for use as spectral dispersing elements. Also examined are approaches to solving the data-processing problems posed by the high data volumes of state-of-the-art ISs (e.g., 160 MB per 600 x 600-pixel AVIRIS scene), including intelligent data editing, lossless and lossy data compression techniques, and direct extraction of scientifically meaningful geophysical and biophysical parameters.

Solomon, Jerry E.↗

Ir/IrSi3/Si Schottky-Barrier Infrared Detector

Quantum efficiency increased. Proposed Schottky-barrier infrared detector has double metallic layer of Ir and IrSi3 instead of single metallic layer of Ir, IrSi, or IrSi3. Offers advantages of both relatively high infrared absorption in thin film of Ir and stability and reproducibility of layer of IrSi3 in contact with Si. Also serves as barrier to chemical reactions between Ir overlayer and Si substrate. Detectors used to form focal-plane array integrated with charge-coupled-device-addressing and image-processing circuitry.

Lin, True-Lon↗

Si(1-x)Ge(x)/Si Infrared Photodiodes

Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.

Lin, True-Lon↗

Innovative Long Wavelength Infrared Detector Workshop Proceedings

The focus of the workshop was on innovative long wavelength (lambda less than 17 microns) infrared (LWIR) detectors with the potential of meeting future NASA and DoD long-duration space application needs. Requirements are for focal plane arrays which operate near 65K using active refrigeration with mission lifetimes of five to ten years. The workshop addressed innovative concepts, new material systems, novel device physics, and current progress in relation to benchmark technology. It also provided a forum for discussion of performance characterization, producibility, reliability, and fundamental limitations of device physics. It covered the status of the incumbent HgCdTe technology, which shows encouraging progress towards LWIR arrays, and provided a snapshot of research and development in several new contender technologies.

Grunthaner, Frank J.↗

LWIR HgCdTe: Innovative detectors in an incumbent technology

HgCdTe is the current material of choice for high performance imagers operating at relatively high temperatures. Its lack of technological maturity compared with silicon and wide-band gap III-V compounds is more than offset by its outstanding IR sensitivity and by the relatively benign effect of its materials defects. This latter property has allowed non-equilibrium growth techniques, metal oxide chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), to produce device quality long wavelength infrared (LWIR) HgCdTe even on common substrates like GaAs and GaAs/Si. Detector performance in these exotic materials structures is comparable in many ways with devices in equilibrium-grown material. Lifetimes are similar. RoA values at 77K as high as several hundred have been seen in HgCdTe/GaAs/Si with 9.5 micron cut-off wavelength. HgCdTe/GaAs layers with approx. 15 micron cut-off wavelengths have given average 77K RoAs of greater than 2. Hybrid focal plane arrays have been evaluated with excellent operability.

Tennant, William E.↗

InAs/GaAs and InAs doping superlattices

The extension of the optical response of narrow band gap III-V semiconductors into the long wavelength infrared radiation (LWIR) regime for high sensitivity sensor applications is a challenging problem. Recent advances in nipi doped GaAs superlattices, lattice mismatched epitaxy and the heteroepitaxial growth of III-V compound semiconductors on silicon substrates offer a number of opportunities. Researchers describe two different device approaches based on the molecular beam epitaxy (MBE) growth of superlattice materials which are directed to LWIR focal plane array technology. The first of these uses nipi superlattices fabricated in bulk InAs which has been grown on either GaAs or Si substrates. The second is based on the growth of a new pseudomorphic tetragonal phase of InAs on GaAs to create a semimetal/semiconductor superlattice material.

Grunthaner, Frank J.↗

Laterally stacked Schottky diodes for infrared sensor applications

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Lin, True-Lon↗

Infrared focal plane performance in the South Atlantic anomaly

Proton-induced pulse height distributions (PHD's) in Si:XX detectors were studied analytically and experimentally. In addition, a preliminary design for a flight experiment to characterize the response of Si:XX detectors to the trapped proton environment and verify PHD models was developed. PHD's were computed for two orbit altitudes for a variety of shielding configurations. Most of the proton-induced pulses have amplitudes less that about 3.5 x 10(exp 5) e-h pairs. Shielding has a small effect on the shape of the PHD's. The primary effect of shielding is to reduce the total number of pulses produced. Proton-induced PHD's in a Si:Sb focal plane array bombarded by a unidirectional 67-MeV beam were measured. The maximum pulse height recorded was 6 x 10(exp 5) pairs. The distribution had two peaks: the larger peak corresponded to 3.8 x 10(exp 5) pairs and the smaller peak to 1.2 x 10(exp 5) pairs. The maximum pulse height and the larger peak are within a factor of two of predicted values. The low-energy peak was not expected, but is believed to be an artifact of inefficient charge collection in the detector. The planned flight experiment will be conducted on a Space Shuttle flight. Lockheed's helium extended life dewar (HELD) will be used to provide the required cryogenic environment for the detector. Two bulk Si:Sb arrays and two Si:As impurity band conduction arrays will be tested. The tests will be conducted while the Space Shuttle passes through the South Atlantic Anomaly. PHD's will be recorded and responsivity changes tracked. This experiment will provide a new database on proton-induced PHD's, compare two infrared detector technologies in a space environment, and provide the data necessary to validate PHD modeling.

Junga, Frank A.↗

Programmable Hyperspectral Imaging Mapper

Programmable hyperspectral imaging mapper (PHIMAP) is conceptual generic advanced spectral imaging system that scans swath along ground track from airplane or spacecraft in orbit. Features include spectrally agile filters and processing on focal-plane array. Provides both high spatial resolution and large number of spectral channels. Can be programmed to trade spectral resolution andspectral coverage flexibly against signal-to-noise ratio to optimize utility of image data from scenes of spectrally and spatially varying brightness.

Cutts, James A.↗

Radiation model predictions and validation using LDEF data

Radiation dosimetry aboard LDEF, as well as post-flight measurements of the radioactivity induced in numerous LDEF spacecraft components, provide unique data for evaluating the accuracy of current models for predicting both the space radiation environments (trapped proton intensity, spectra, and directionality; cosmic ray fluence) and the radiation environments induced in spacecraft components (fluence, energy spectra, secondary particle, linear energy transfer, etc.). By determining the accuracy of such models using LDEF data, and with model updates where required, improved radiation environment predictions can be made for future missions, which in turn allows improved predictions for specific radiation effects for future spacecraft components (single event upsets of microelectronics, radiation damage to focal plane arrays, noise in sensitive instrumentation, etc.). Herein, the status and results from radiation model predictions and comparisons with LDEF data is given. The calculations are made using radiation transport codes coupled with a 3-D geometry/mass model of LDEF, together with current models of the space radiation environment.

Armstrong, T. W.↗

GaAs/AlGaAs superlattice miniband detector with 14.5 microns peak response

Extended long wavelength infrared detection with a miniband-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is peaked near 14.5 microns in good agreement with the theoretical response, provided that electron-elecltron interactions are taken into account. The detector operates at a low bias voltage, which could lead to important advantages in application to IR focal plane arrays.

Bandara, K. M. S. V.↗

Space astronomical telescopes and instruments; Proceedings of the Meeting, Orlando, FL, Apr. 1-4, 1991

The present volume on space astronomical telescopes and instruments discusses lessons from the HST, telescopes on the moon, future space missions, and mirror fabrication and active control. Attention is given to the in-flight performance of the Goddard high-resolution spectrograph of the HST, the initial performance of the high-speed photometer, results from HST fine-guidance sensors, and reconstruction of the HST mirror figure from out-of-focus stellar images. Topics addressed include system concepts for a large UV/optical/IR telescope on the moon, optical design considerations for next-generation space and lunar telescopes, the implications of lunar dust for astronomical observatories, and lunar liquid-mirror telescopes. Also discussed are space design considerations for the Space Infrared Telescope Facility, the Hubble extrasolar planet interferometer, Si:Ga focal-plane arrays for satellite and ground-based telescopes, microchannel-plate detectors for space-based astronomy, and a method for making ultralight primary mirrors.

Bely, Pierre Y.↗

INAS hole-immobilized doping superlattice long-wave-infrared detector

An approach to long-wave-infrared (LWIR) technology is discussed. The approach is based on molecular beam epitaxy (MBE) growth of hole immobilized doping superlattices in narrow band gap 3-5 semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures suitable for focal plane arrays. An LWIR detector that has high detectivity performance to wavelengths of about 16 microns at operating temperatures of 65K, where long-duration space refrigeration is plausible, is presented.

Maserjian, Joseph↗

Acousto-optic infrared spectral imager for Pluto fast flyby

Acousto-optic tunable filters (AOTF's) enable the design of compact, two-dimensional imaging spectrometers with high spectral and spatial resolution and with no moving parts. Tellurium dioxide AOTF's operate from about 400 nm to nearly 5 microns, and a single device will tune continuously over one octave by changing the RF acoustic frequency applied to the device. An infrared (1.2-2.5 micron) Acousto-Optic Imaging Spectrometer (AImS) was designed that closely conforms to the surface composition mapping objectives of the Pluto Fast Flyby. It features a 75-cm focal length telescope, infrared AOTF, and 256 x 256 NICMOS-3 focal plane array for acquiring narrowband images with a spectral resolving power (lambda/delta(lambda)) exceeding 250. We summarize the instrument design features and its expected performance at the Pluto-Charon encounter.

Glenar, D. A.↗

640 x 480 MWIR and LWIR camera system developments

The performance of a 640 x 480 PtSi, 3,5 microns (MWIR), Stirling cooled camera system with a minimum resolvable temperature of 0.03 is considered. A preliminary specification of a full-TV resolution PtSi radiometer was developed using the measured performance characteristics of the Stirling cooled camera. The radiometer is capable of imaging rapid thermal transients from 25 to 250 C with better than 1 percent temperature resolution. This performance is achieved using the electronic exposure control capability of the MOS focal plane array (FPA). A liquid nitrogen cooled camera with an eight-position filter wheel has been developed using the 640 x 480 PtSi FPA. Low thermal mass packaging for the FPA was developed for Joule-Thomson applications.

Tower, J. R.↗