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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Experiment M405: Tri-axis flux gate magnetometer

A tri-axis flux-gate magnetometer was used on four Gemini spacecraft for determination of the magnitude and direction of the local geomagnetic field with respect to the spacecraft. Conclusions derived from the data are not only important to the proton-electron spectrometer experiment, but also are of significance to any directional charged particle experiments that may be conducted. Even though the Gemini spacecraft was not clean magnetically, the data could be reduced to a form that supplied directional information on the magnetic field in relation to the spacecraft. Stray fields were the result of spacecraft structure, not the result of current flows that were produced within the spacecraft electrical systems. Efforts were made to reduce spacecraft stray fields and to facilitate the acquisition of more accurate data.

Womack, W. D.↗
NASA NTRS1970

Current conduction in junction gate field effect transistors

The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.

Kim, C.↗
NASA NTRS1972

Development of high speed power thyristor: The gate assisted turn-off thyristor

A high speed power switch with unique turn-off capability was developed. This gate-assisted turn-off thyristor was rated at 609 V and 50 A with turn-off times of 2 microsec. Twenty-two units were delivered for evaluation in a series inverter circuit. In addition, test circuits designed to relate to the series inverter application were built and demonstrated.

Hamilton, D. R.↗
NASA NTRS1973

Gated compressor, distortionless signal limiter

Comparator/multiplier arrangement is capable of limiting input power to voice coil so that desired maximum current level is never exceeded. Overall test system consists of signal source which produces frequency spectrum required for acoustic test, gated compressor circuit, and power amplifier feeding transducer.

Woodbury, R. C.↗
NASA NTRS1974

Combined sun-acquisition and sun gate-sensor system for spacecraft attitude control

Arrangement combines acquisition and gate functions and reduces sensitivity so that attitude control is effective regardless of changes in solar intensity. There are five photoconductive detectors all electrically interconnected. Detectors are so positioned that, regardless of spacecraft orientation at any instant of interest, at least one detector is illuminated.

Schmidt, L. F.↗
NASA NTRS1973

Gated high speed optical detector

The design, fabrication, and test of two gated, high speed optical detectors for use in high speed digital laser communication links are discussed. The optical detectors used a dynamic crossed field photomultiplier and electronics including dc bias and RF drive circuits, automatic remote synchronization circuits, automatic gain control circuits, and threshold detection circuits. The equipment is used to detect binary encoded signals from a mode locked neodynium laser.

Green, S. I.↗
NASA NTRS1975

Commercial aircraft as a source of automated meteorological data for GATE and DST

Specially-equipped wide-body commercial aircraft which are flying tropical and Southern Hemispheric routes are providing a new and unique source of meteorological data with a 100 km spatial resolution. Data have been gathered for the GATE, and the planning for a similar effort for the DST is in progress. These aircraft not only provide synoptic data in critical areas devoid of conventional data, but are, in effect, meteorological research platforms that can provide valuable information on mesoscale phenomena. By 1976 it is anticipated that there will be over 80 such aircraft flying global routes. These specially-equipped jets could also be effectively used for EGGE by providing the nucleus of a supplementary observing system for gathering world-wide meteorological data.

Julian, P. R.↗
NASA NTRS1974

Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.

Gassaway, J. D.↗
NASA NTRS1977

Time-division multiplexer uses digital gates

Device eliminates errors caused by analog gates in multiplexing a large number of channels at high frequency. System was designed for use in aerospace work to multiplex signals for monitoring such variables as fuel consumption, pressure, temperature, strain, and stress. Circuit may be useful in monitoring variables in process control and medicine as well.

Myers, C. E.↗
NASA NTRS1975

Tunnel injection into gate oxide traps

An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co-60 irradiation. The results are related to long-term drift of threshold voltage.

Maserjian, J.↗
NASA NTRS1976

Bakeable UHV gate valve for microwave tube experimentation

The performance characteristics and design of an ultrahigh-vacuum (UHV) gate valve intended for experiments on high-power microwave tubes are described. Tests run on the valve indicate open/close cycles can run into the hundreds or thousands without trouble. The valve was baked at 450 C or higher for at least 4 h. Applications of the valve include evaluation of NASA-design multistage depressed collectors for high-power PPM focused helix-type traveling-wave tubes.

Gilmour, A. S., Jr.↗
NASA NTRS1978

Ozone concentration in the cabin of a Gates Learjet measured simultaneously with atmospheric ozone concentrations

A Gates Learjet Model 23 was instrumented with monitors to measure simultaneously the atmospheric and the cabin concentrations of ozone at altitudes up to 13 kilometers. Six data flights were made in February 1978. Results indicated that only a small amount of the atmospheric ozone is destroyed in the cabin pressurization system. Ozone concentrations measured in the cabin near the conditioned-air outlets were only slightly lower than the atmospheric ozone concentration. For the two cabin configurations tested, the ozone retention in the cabin was 63 and 41 percent of the atmospheric ozone concentration. Maximum cabin ozone concentration measured during these flights was 410 parts per billion by volume.

Briehl, D.↗
NASA NTRS1979

The gate studies: Assessing the potential of future small general aviation turbine engines

Four studies were completed that explore the opportunities for future General Aviation turbine engines (GATE) in the 150-1000 SHP class. These studies forecasted the potential impact of advanced technology turbine engines in the post-1988 market, identified important aircraft and missions, desirable engine sizes, engine performance, and cost goals. Parametric evaluations of various engine cycles, configurations, design features, and advanced technology elements defined baseline conceptual engines for each of the important missions identified by the market analysis. Both fixed-wing and helicopter aircraft, and turboshaft, turboprop, and turbofan engines were considered. Sizable performance gains (e.g., 20% SFC decrease), and large engine cost reductions of sufficient magnitude to challenge the reciprocating engine in the 300-500 SHP class were predicted.

Strack, W. C.↗
NASA NTRS1979

A test of a cumulus parameterization model using the GATE data

Two parametric, ensemble cloud models were tested with data obtained during GATE (GARP Atlantic Tropical Experiment) (1974). The first model is an adaption of the Arakawa-Schubert scheme which uses an entraining jet to represent individual cumulus cloud types. The second model consists of an ensemble of cylindrical cells to represent the convective cloud field.

Rodenhuis, D.↗
NASA NTRS1977

Design, fabrication, and evaluation of charge-coupled devices with aluminum-anodized-aluminum gates

A 4-phase, 49 1/2 bit CCD shift register was designed and fabricated using two levels of aluminum metallization with anodic Al2O3 insulation separating the layers. Test circuitry was also designed and constructed. A numerical analysis of an MOS-RC transmission line was made and results are given to characterize performance for various conductivities. The electrical design of the CCD included a low-noise dual-gate input and a balanced floating diffusion output circuit. Metallization was accomplished both by low voltage DC sputtering and thermal evaporation. The audization was according to published procedures using a buffered tartaric acid bath. Approximately 20 wafers were processed with 50 complete chips per wafer. All devices failed by shorting between the metal levels at some point. Experimental procedures eliminated temperature effects from sintering and drying, anodic oxide thickness, edge effects, photoresist stripping procedures, and metallization techniques as the primary causes of failure. It was believed from a study of SEM images that protuberances (hillocks) grow up from the first level metal through the oxide either causing a direct short or producing a weak, highly stressed insulation point which fails at low voltage. The cause of these hillocks is unknown; however, they have been observed to grow during temperature excursions to 470 C.

Gassaway, J. D.↗
NASA NTRS1977

Design rules for RCA self-aligned silicon-gate CMOS/SOS process

The CMOS/SOS design rules prepared by the RCA Solid State Technology Center (SSTC) are described. These rules specify the spacing and width requirements for each of the six design levels, the seventh level being used to define openings in the passivation level. An associated report, entitled Silicon-Gate CMOS/SOS Processing, provides further insight into the usage of these rules.

Source record↗
NASA NTRS1979

Silicon-gate CMOS/SOS processing

Major silicon-gate CMOS/SOS processes are described. Sapphire substrate preparation is also discussed, as well as the following process variations: (1) the double epi process; and (2) ion implantation.

Ramondetta, P.↗