Excitonic insulator in GaAs junctions.
Excitonic insulator formation by electrons and holes pairing in GaAs p-n junctions from electron tunneling data comparison with theory
Payne, R. T.↗
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Proposed superconducting thin-film tunneling junction with negative resistance above temperatures of boiling helium.
Superconducting thin film tunneling junctions for negative resistance devices above boiling helium temperatures
Blume, H.-J. C.↗
Conditions for parametric oscillations in an abrupt-junction non-overdriven varactor doubler.
Parametric oscillations of nonoverdriven abrupt junction varactor doubler
Grayzel, A. I.↗
Fabrication of tunnel junctions on niobium films.
Tunnel junctions with low background currents made by reacting active gas layer adsorbed on Nb film surface with Pb upper film to form barrier
Mullen, L. O.↗
Phosphorus diffusion conditions for shallow junction solar cells
Phosphorus diffusion conditions for shallow junction solar cells
Kautz, H. E.↗
Liquid junction and method of fabricating the same Patent Application
Liquid junction for glass electrode or pH meters
Vango, S. P.↗
Computer-aided design of three-port waveguide junction circulators
Lossless three-port H-plane waveguide junction circulator performance evaluation using computerized design
Castillo, J. B., Jr.↗
An analysis of current saturation mechanism of junction field-effect transistors
Two dimensional numerical analysis of current saturation mechanism for junction field effect transistors with small and large length-to-width ratio values
Kim, C.-K.↗
Ionization gauge using a SiC p-n junction electron emitter
Ionization gage with reverse biased silicon carbide p-n junction hot electron emitter as source
Dobrott, J. R.↗
Preparation of visible-light-emitting p-n junctions in AlAs
Visible light-emitting p-n junctions formed in AlAs via Zn diffusion into single crystal n- type vapor grown AlAs layers
Ettenberg, M.↗
Junction capacitance as a function of voltage for diffused p-n diodes with exponential doping gradients
Capacitance calculation for diffused p-n junction with exponential doping gradients
Been, J. F.↗
Regional significance of volcanic geochemistry in the Far Triple Junction, Ethiopia
Regional significance of volcanic geochemistry in far Triple Junction, Ethiopia
Mohr, P. A.↗
Effects of nuclear radiation on a high reliability silicon power diode. 3 - Junction capacitance
Nuclear radiation effects on junction capacitance of silicon p-n diode
Been, J. F.↗
On the radiation emitted from a superconducting tunnel junction
Superconducting tunnel junctions radiation emission, discussing superconductivity theory
Lee, P. A.↗
Influence of p-n junctions on the mobile charge density in MOS transistors
MOS transistors and bipolar microcircuits mobile charge density, observing p-n junction effects
Schlegel, E. S.↗
A refined step-recovery technique for measuring minority carrier lifetimes and related parameters in asymmetric p-n junction diodes
Forward biased asymmetric p-n junction diodes with arbitrary impurity distributions, measuring minority carrier lifetimes by refined step recovery technique
Dean, R. H.↗
Interaction of electrons with impurities and the k equals approximately zero longitudinal optical phonon in metal-insulator-semiconductor tunnel junctions
Electrons interaction with impurities and longitudinal optical phonon in metal-insulator- semiconductor tunnel junctions
Compton, W. D.↗
Current conduction in junction gate field effect transistors
The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.
Kim, C.↗