Results for “metal imaging” — Page 18

DOE OSTI2025

Optical image analysis of WSe 2 − thresholding for layer detection

The fast and reliable layer identification of two-dimensional transition metal dichalcogenide (TMD), such as WSe 2 , is essential to investigating their thickness-dependent electronic and optical properties. This article presents efficient optical image thresholding methodology designed to segment the mono, bi, and tri-layer regions of WSe 2 flakes mechanically exfoliated onto a SiO 2 /Si substrate. The optical images were first preprocessed to exclude the background effect and analyzed using the pixel medians and interquartile ranges for fundamental color channels—red, green, and blue (RGB). The analysis of red channel pixel intensities yielded three distinct ranges, serving as thresholds for layer segmentation: monolayer (111.0–118.0), bilayer (103.0–110.0), and tri-layer (93.0–103.0). Similarly, thresholds were established for each color channel, facilitating a comparative study of the segmentation performances. Further, the intersection-over-union ($IoU$) calculations revealed that the red and green channels demonstrated greater than 99 % and 90 % accuracy in differentiating each layer, respectively. This approach yields remarkable results without substantial data calibration that utilizes time-intensive heuristic techniques. Moreover, the proposed methodology offers the flexibility to compare performances across different color channels, expanding the applicability for other 2D material systems.

2D Materials↗

DOE OSTI2020

(S)TEM/EDS study of native precipitates and irradiation induced Nb-rich platelets in high-burnup M5®

We have investigated microstructure and microchemistry of precipitates and dislocation loops in high-burnup M5® using (scanning) transmission electron microscopy ((S)TEM) equipped with energy dispersive X-ray spectroscopy (EDS). Two (S)TEM lamellae were made by cryo-FIB from the same cladding sample. The Nb-rich native precipitates were found in the metal, in the suboxide and in the oxide. Upon diffraction analysis, most of the Nb-rich native precipitates in the metal matrix remain as β-Nb phase, while no β-Nb native precipitates were found in the oxide. Nearby the oxide and metal (O/M) interface, the native precipitates in the oxide were already oxidized into t-NbO2 phase. At further distance away from the O/M interface, the Nb-rich native precipitates were gradually oxidized and became amorphous. Besides the native precipitates, Nb-rich irradiation induced precipitates (IIPs) were found in the metal matrix. Using g = <0002> vector for imaging, the length of the IIPs was aligned with dislocation loops. However, no Nb segregation to the dislocation loops themselves was observed. For the first time, we report that IIPs indeed exist in the oxide but only within about 1.5 µm away from O/M interface. However, the oxidation state of the IIPs in the oxide is still unclear. The presence of both native precipitates and IIPs in the oxide may indicate the Nb concentration in the oxide solid solution remain low nearby the O/M interface, which may explain the reduced corrosion kinetics of in-pile M5®. On the other hand, no IIPs were observed in the oxide at further distance and this may indicate that they have eventually dissolved back into the oxide. A few mechanisms related to IIPs stability in the oxide are presented.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2026

Locating the atoms at the hard-soft interface of gold nanoparticles

Surface structure affects the growth, shape and properties of nanoparticles. In wet chemical syntheses, metal additives and surfactants are used to modify surfaces and guide nanocrystal growth. To understand this process, it is critical to understand how the surface structure, and hence its energy, is modified. However, measuring the type and arrangement of atoms at hard-soft interfaces on nanoscale surfaces, especially in the presence of surfactants, is extremely challenging. Here, we determine the atomic structure of the hard-soft interface in a metallic nanoparticle by developing low-dose imaging conditions in four-dimensional scanning transmission electron microscopy that are preferentially sensitive to surface adatoms. By revealing experimentally the copper additives and bromide surfactant counterion at the surface of a gold nanocuboid and quantifying their interatomic distances, our direct, low-dose imaging method provides atomic-level understanding of chemically sophisticated nanomaterial surface structures. These measurements of the atomic structure of the hard-soft interface provide the information necessary to understand and quantify surface chemistries and energies and their pivotal role in nanocrystal growth.

Li, Weilun [Monash University, Melbourne, VIC (Aus↗

DOE OSTI2024

Spin Berry curvature-enhanced orbital Zeeman effect in a kagome metal

Berry phases and the related concept of Berry curvature can give rise to many unconventional phenomena in solids. Here, we discover a colossal orbital Zeeman effect of topological origin in a bilayer kagome metal, TbV 6 Sn 6 . Using spectroscopic imaging scanning tunnelling microscopy, we reveal that the magnetic field leads to a splitting of the gapped Dirac dispersion into two branches with enhanced momentum-dependent g factors, resulting in a substantial renormalization of the Dirac band. These measurements provide a direct observation of a magnetic field-controlled orbital Zeeman coupling to the orbital magnetic moments of up to 200 Bohr magnetons near the gapped Dirac points. Our work provides direct insight into the momentum-dependent nature of topological orbital moments and their tunability via the magnetic field, concomitant with the evolution of the spin Berry curvature. Furthermore, these results can be extended to explore large orbital magnetic moments driven by the Berry curvature governed by other quantum numbers beyond spin, such as the valley in certain graphene-based structures.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Bulk halide perovskites as triplet sensitizers: progress and prospects in photon upconversion

Triplet–triplet annihilation-based photon upconversion (TTA-UC) is a promising mechanism for harvesting lower energy photons by converting them to a higher energy. Photons generated from this process can be used for numerous applications, including photovoltaics, infrared sensing and imaging, biomedicine and photochemical reactions. Recently, bulk metal halide perovskite semiconductors have been introduced as triplet sensitizers for the TTA-UC process. While relatively efficient upconversion has been achieved at low fluences, the full potential of these materials as triplet sensitizers has not been unlocked. In this study, we examine four pathways for device optimization and improvements, while discussing relevant works and potential further improvements. Finally, we discuss the outlook and bright future of such perovskite materials as triplet sensitizers and their important role in solid-state upconversion applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Rational design of a genetically encoded NMR zinc sensor

Elucidating the biochemical roles of the essential metal ion, Zn 2+ , motivates detection strategies that are sensitive, selective, quantitative, and minimally invasive in living systems. Fluorescent probes have identified Zn 2+ in cells but complementary approaches employing nuclear magnetic resonance (NMR) are lacking. Recent studies of maltose binding protein (MBP) using ultrasensitive 129 Xe NMR spectroscopy identified a switchable salt bridge which causes slow xenon exchange and elicits strong hyperpolarized 129 Xe chemical exchange saturation transfer (hyper-CEST) NMR contrast. To engineer the first genetically encoded, NMR-active sensor for Zn 2+ , we converted the MBP salt bridge into a Zn 2+ binding site, while preserving the specific xenon binding cavity. The zinc sensor (ZS) at only 1 μM achieved ‘turn-on’ detection of Zn 2+ with pronounced hyper-CEST contrast. This made it possible to determine different Zn 2+ levels in a biological fluid via hyper-CEST. ZS was responsive to low-micromolar Zn 2+ , only modestly responsive to Cu 2+ , and nonresponsive to other biologically important metal ions, according to hyper-CEST NMR spectroscopy and isothermal titration calorimetry (ITC). Protein X-ray crystallography confirmed the identity of the bound Zn 2+ ion using anomalous scattering: Zn 2+ was coordinated with two histidine side chains and three water molecules. Penta-coordinate Zn 2+ forms a hydrogen-bond-mediated gate that controls the Xe exchange rate. Metal ion binding affinity, 129 Xe NMR chemical shift, and exchange rate are tunable parameters via protein engineering, which highlights the potential to develop proteins as selective metal ion sensors for NMR spectroscopy and imaging.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2001

Occurrence and Distribution of Fe-0 Globules in Lunar Agglutinates

High-resolution Backscattered Electron Imaging (BSE) of agglutinitic glass shows immiscible metallic Fe(o) globules (greater than 99% are less than 15 nm; greater than 50% are less than 50 nm) in agglutinitic melt defining flow-lines, occurring in clusters, and rimming clasts (approx. 5%). Additional information is contained in the original extended abstract.

Basu, Abhijit↗

NASA NTRS2000

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗

NASA NTRS1995

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2003

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2004

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2003

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗

NASA NTRS2006

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2019

Magnetic Calorimeter Option for the Lynx X-Ray Microcalorimeter

One option for the detector technology to implement the Lynx x-ray microcalorimeter (LXM) focal plane arrays is the metallic magnetic calorimeter (MMC). Two-dimensional imaging arrays of MMCs measure the energy of x-ray photons by using a paramagnetic sensor to detect the temperature rise in a microfabricated x-ray absorber. While small arrays of MMCs have previously been demonstrated that have energy resolution better than the 3 eV requirement for LXM, we describe LXM prototype MMC arrays that have 55,800 x-ray pixels, thermally linked to 5688 sensors in “hydra” configurations, and that have sensor inductance increased to avoid signal loss from the stray inductance in the large-scale arrays when the detectors are read out with microwave superconducting quantum interference device multiplexers, and that use multilevel planarized superconducting wiring to provide low-inductance, low-crosstalk connections to each pixel. We describe the features of recently tested MMC prototype devices and simulations of expected performance in designs opti- mized for the three subarray types in LXM.

Stevenson, Thomas R.↗

DOE OSTI2024

Nanoscale visualization and spectral fingerprints of the charge order in ScV 6 Sn 6 distinct from other kagome metals

Charge density waves (CDWs) in kagome metals have been tied to many exotic phenomena. Here, using spectroscopic-imaging scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we study the charge order in kagome metal ScV 6 Sn 6 . The similarity of electronic band structures of ScV 6 Sn 6 and TbV 6 Sn6 (where charge ordering is absent) suggests that charge ordering in ScV 6 Sn 6 is unlikely to be primarily driven by Fermi surface nesting of the Van Hove singularities. In contrast to the CDW state of cousin kagome metals, we find no evidence supporting rotation symmetry breaking. Differential conductance dI/dV spectra show a partial gap Δ 1 CO ≈ 20 meV at the Fermi level. Interestingly, dI/dV maps reveal that charge modulations exhibit an abrupt phase shift as a function of energy at energy much higher than Δ 1 CO , which we attribute to another spectral gap. Our experiments reveal a distinctive nature of the charge order in ScV 6 Sn 6 with fundamental differences compared to other kagome metals.

36 MATERIALS SCIENCE↗

DOE OSTI2021

The Population of H ii Regions in NGC 7020

The galaxy NGC 7020 displays an exotic hexagonal ringlike central structure with conspicuous ansae located at two opposite vertices and a tenuous external ring populated by H ii regions. Inside and around the hexagonal structure, Hα emission is also present at the inner disk. To characterize the population of the H ii regions, as well as their ionizing clusters, we imaged NGC 7020 with narrowband Hα and nearby continuum filters attached to GMOS-S installed on the Gemini South telescope. We found 202 H ii regions or complexes of H ii regions evenly distributed between the outer ring and the central disk The nucleus and ansae also present Hα emission. The equivalent width of the Hα line (W {sub Hα}) is systematically greater at the regions of the outer ring relative to those of the inner disk. We discuss the influence of the metallicity gradient of the disk and the upper limit of the masses of the initial mass function on W {sub Hα}, and we conclude that the data are still consistent with the occurrence of a younger burst of H ii region formation in the outer ring. The central regions present more massive clusters, M ≥ 10{sup 6} M {sub ⊙}, than those of the outer ring (M ≤ 10{sup 6} M {sub ⊙}). Three clusters within 5″ of the nucleus present masses higher than 10{sup 8} M {sub ⊙}. The presence of diffuse Hα emission in the inner 5″ suggests gas flows in the nuclear region.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2025

Self‐Strain Suppression of the Metal‐to‐Insulator Transition in Phase‐Change Oxide Devices

Strongly correlated materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built‐in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase‐change oxides, which allow for control over the metal‐to‐insulator transition. Here, X‐ray nano‐diffraction structural imaging of micro‐devices fabricated with the archetypal phase‐change material vanadium sesquioxide (V 2 O 3 ) is reported. The devices contain a Ga ion‐irradiated region where the metal‐to‐insulator transition critical temperature is lowered, a useful feature for controlling neuron‐like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal‐to‐insulator‐transition. Suppression occurs within the irradiated region or along its edges, depending on the defect‐distribution and the size of the region. The observed self‐straining effect can extend to other phase‐change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase‐change devices and highlight the necessity to study phase transitions at the nanoscale.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2020

High-Energy X-ray Tomographic Analysis of Precursor Metal Powders (Ti-6Al-4V) Used for Additive Manufacturing

We utilized high-energy x-ray tomography to characterize Ti-6Al-4V metal powders (both as-received and recycled) used in powder-bed additive manufacturing process. The image processing workflow was developed to process and analyze large amount of data objectively by computer program. The distribution of size and shape of the metal particles as well as defect (mainly porosity) inside the particles was analyzed with the statistical representation and resolution in micrometer. The result revealed that circular-shaped porosity with various sizes could be embedded in the powder particles. These porosities could potentially be transferred to the 3D printed part and critically affect the mechanical performance of the component. The present study shows the effectiveness of characterizing metal powders using x-ray imaging techniques where sufficient number of particles can be sampled within tens of minutes with a minimum sample preparation and high accuracy. Clear structural differences in the as-received and recycled powders were delineated that helps in determining the feasibility of using the recycled powders.

36 MATERIALS SCIENCE↗