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At least 325 records · Page 18

Wire-based metallization and stringing for solar cells

Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a string of solar cells includes a plurality of back-contact solar cells, wherein each of the plurality of back-contact solar cells includes P-type and N-type doped diffusion regions. A plurality of conductive wires is disposed over a back surface of each of the plurality of solar cells, wherein each of the plurality of conductive wires is substantially parallel to the P-type and N-type doped diffusion regions of each of the plurality of solar cells. One or more of the plurality of conductive wires adjoins a pair of adjacent solar cells of the plurality of solar cells and has a relief feature between the pair of adjacent solar cells.

Sewell, Richard Hamilton↗

Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO 3

The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide Nd x Sr 1 – x SnO 3 (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 10 18 cm –3 to 2.0 × 10 20 cm –3 . Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm 2 V –1 s –1 , among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm 2 V –1 s –1 depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics

36 MATERIALS SCIENCE↗

First principles study on 2H–1T' transition in MoS 2 with copper

In this paper, the electronic properties of MoS 2 are strongly controlled by the structure, providing a route to their modulation. We report, based on first principles calculations, that the adsorption of metal atom Cu on the surface can induce the phase transition of MoS 2 from the semiconducting 2H to the metallic 1T' phase. Cu adsorption results in effective n-type doping of MoS 2 by charge transfer from Cu in the case of the 1T' phase. This is distinct from the behavior in the 2H phase, where Cu does not donate any charge, and it is also distinct from alkali metal adsorption, where charge is donated to both 2H and 1T' MoS 2 . Charge donation to the 1T' phase by Cu stabilizes it with respect to the 2H structure and importantly, it also reduces the energy barrier between the 2H and 1T' structures. This difference reflects the higher electronegativity of Cu, which also indicates that Cu-modified MoS 2 can be expected to be less chemically reactive than MoS 2 with alkali metal adatoms. The main atomic mechanism of the structural transition is the gliding of S atoms on the upper surface. Finally, we report the energetics of the 2H to 1T' transition with several other adatoms, Ag, Au, Ni, Pt and Pd, but none of them are as effective as Cu in inducing the transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

AlGaN polarization-doped field-effect transistors were characterized by DC and pulsed measurements from room temperature to 500 °C in ambient. DC current-voltage characteristics demonstrated only a 70% reduction in on-state current from 25 to 500 °C and full gate modulation, regardless of the operating temperature. Near ideal gate lag measurement was realized across the temperature range that is indicative of a high-quality substrate and sufficient surface passivation. The ability for operation at high temperature is enabled by the high Schottky barrier height from the Ni/Au gate contact, with values of 2.05 and 2.76 eV at 25 and 500 °C, respectively. The high barrier height due to the insulatorlike aluminum nitride layer leads to an ION/IOFF ratio of 1.5 × 10 9 and 6 × 10 3 at room temperature and 500 °C, respectively. Transmission electron microscopy was used to confirm the stability of the heterostructure even after an extended high-temperature operation with only minor interdiffusion of the Ni/Au Schottky contact. The use of refractory metals in all contacts will be key to ensure a stable extended high-temperature operation.

36 MATERIALS SCIENCE↗

Half-filled stripes in a hole-doped three-orbital spin-fermion model for cuprates

Using Monte Carlo techniques, we study a three-orbital CuO 2 spin-fermion model for copper-based high-critical-temperature superconductors that captures the charge-transfer properties of these compounds. Our studies reveal the presence of spin order in the parent compound and, more importantly, stripe spin and charge order under hole doping. Due to the p-d orbital hybridization, the added holes are approximately equally distributed among the two p orbitals of the oxygen atoms and the d orbital of the copper atoms in the unit cell. In rectangular clusters of dimension 16×4 half-filled stripes are observed upon hole doping; namely, when N h =2$n$ holes are introduced in the system, then n vertical stripes of length 4 along the short periodic direction are formed. The original antiferromagnetic order observed in the parent compound develops a π shift across each stripe, and the magnetic structure factor has a peak at wave vector k=(π-δ,π) with δ=2πN h /N=πN h /2L, where L=16. The electronic charge is also modulated, and the charge structure factor is maximized at $k$=(2δ,0). As electrons are removed from the system, intracell orbital nematicity with &#9001$n_{p_x}$&#9002 -&#9001$n_{p_y}$&#9002 ≠ 0 develops in the oxygen sector, as well as intercell magnetic nematicity with &#9001S$^z_{i,d}$(S$^z_{i+x,d}$-S$^z_{i+y,d}$)&#9002 ≠ 0 in the spin copper sector, in the standard notation. This occurs not only in rectangular but also in square 8×8 lattices. Our results suggest that the essence of the stripe spin and charge distribution experimentally observed in hole-doped cuprates is captured by unbiased Monte Carlo studies of a simple hole-doped charge-transfer insulator CuO 2 spin-fermion model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Identification and characterization of deep nitrogen acceptors in β-Ga 2 O 3 using defect spectroscopies

The ability to achieve highly resistive beta-phase gallium oxide (β-Ga 2 O 3 ) layers and substrates is critical for β-Ga 2 O 3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at E C -0.8 eV in the β-Ga 2 O 3 bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at E C -2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and E C -2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor with a configuration of N occupying the oxygen site III [N O(III) ]. The near ideal efficiency for this state to compensate free electrons and its location toward the midgap region of the β-Ga 2 O 3 bandgap demonstrates the potential of N doping as a promising approach for producing semi-insulating β-Ga 2 O 3 .

36 MATERIALS SCIENCE↗

Defect–Concentration–Mediated T–Nb 2 O 5 Anodes for Durable and Fast–Charging Li–Ion Batteries

Metastable orthorhombic niobium pentoxide (T-Nb 2 O 5 ) is a promising anode to fulfill the requirements for high-rate Li-ion batteries (LIBs). Stoichiometric T-Nb 2 O 5 is plagued by low electric conductivity and particle pulverization after repeated charge/discharge processes. In this work, oxygen vacancies are implanted into T-Nb 2 O 5 particles via acid immersion of Nb 2 O 5 ·nH 2 O with the formation of Lewis acid sites. The multiple characterizations and simulations reveal the lengthening of Nb–O bonds, and the transformation from NbO 7 pentagonal bipyramids and NbO 6 tetragonal bipyramids in T-Nb 2 O 5–x . The enrichment of oxygen vacancies endows T-Nb 2 O 5–x with higher electric conductivity, better electrochemical kinetics, larger pseudocapacitive contribution. O-doped graphitic C 3 N 4 is creatively proposed as a trace oxygen pump to repair excessive oxygen vacancies, and it also serves as a sacrifice template for Nb 2 O 5–x growth to construct a porous and monolithic electrode network. Defect-modulated Nb 2 O 5–x displays extraordinary cycling stability (164 mAh g –1 at 5 C after 1100 cycles), high capacity retention (104 mAh g –1 ) at an ultrahigh rate (25 C), and large areal capacity (0.74 mAh cm –2 ) under high mass loading (4 mg cm –2 ). The practical prospect is proved by Nb 2 O 5–x /LiNi 0.8 Co 0.1 Mn 0.1 O 2 full cells with high average platform (2.12 V) and high specific capacity (229 mAh g –1 ). Finally, the oxygen-defect modulation strategy on oxide anodes provides an alternative solution to fast-charging and durable LIBs.

25 ENERGY STORAGE↗

Spatial Interactions in Hydrogenated Perovskite Nickelate Synaptic Networks

A key aspect of how the brain learns and enables decision-making processes is through synaptic interactions. Electrical transmission and communication in a network of synapses are modulated by extracellular fields generated by ionic chemical gradients. Emulating such spatial interactions in synthetic networks can be of potential use for neuromorphic learning and the hardware implementation of artificial intelligence. Here, in this work, we demonstrate that in a network of hydrogen-doped perovskite nickelate devices, electric bias across a single junction can tune the coupling strength between the neighboring cells. Electrical transport measurements and spatially resolved diffraction and nanoprobe X-ray and scanning microwave impedance spectroscopic studies suggest that graded proton distribution in the inhomogeneous medium of hydrogen-doped nickelate film enables this behavior. We further demonstrate signal integration through the coupling of various junctions.

36 MATERIALS SCIENCE↗

Bright electroluminescence in ambient conditions from WSe 2 p-n diodes using pulsed injection

Transition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. Here, we study the time-resolved electroluminescence of monolayer WSe 2 p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ~1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. Finally, our device exhibits ~15 ns rise and fall times, the fastest direct modulation speed reported for TMDC light-emitting diodes.

2D materials↗

Dirac plasmons and beyond: the past, present, and future of plasmonics in 3D topological insulators

Here, we review progress studying unique plasmonics in topological insulators (TIs). First, we describe exfoliation and deposition synthesis approaches. TI materials have substantially improved: it is now possible to grow samples with few trivial electrons and controllable doping. We then describe the theory behind the unique behavior of the coupled, 2D Dirac plasmons. While reviewing experimental efforts, we note that Dirac plasmons have been conclusively demonstrated in TIs and they show remarkable properties including long lifetimes, large mode indices, and huge modulation depths. Finally, we describe the opportunities that are present now that high-quality materials can be obtained, including spin and nanoparticle plasmons.

36 MATERIALS SCIENCE↗

Results from the DUNE ND-LAr 2x2 Demonstrator Run 2

The Deep Underground Neutrino Experiment (DUNE) is a cutting-edge, long-baseline experiment under construction in the United States, based on large liquid-argon time projection chambers (LArTPCs). The DUNE Near Detector LArTPC (ND-LAr) will employ a novel modular architecture using a pixelated LArPix charge readout. To validate this design and characterize detector response, the 2×2 demonstrator—an array of eight optically isolated LArTPC modules—was deployed at Fermilab in 2024. During winter 2025, the 2x2 demonstrator was operated for a second data-taking campaign (Run 2) with the aim of studying the low-energy response of the detector. Run 2 focused on calibration and response studies using a suite of deployed radioactive sources. Gamma sources (²²Na, ⁶⁰Co, and ⁸⁸Y) were used to probe module-to-module performance variations, energy resolution, and calibrations. Neutron sources (AmBe and a pulsed neutron generator) enabled studies of neutron interactions in liquid argon, including inelastic scatters and neutron capture signals, relevant for low-energy backgrounds and detector modeling. In addition, the detector was doped with ²²⁰Rn, providing Bi–Po coincidence signals that allow precise calibration of the charge and scintillation response. This poster will present results from these calibration campaigns. These studies provide critical validation of the ND-LAr modular LArTPC concept and inform calibration and reconstruction strategies for the full DUNE near detector.

Mora-Lepin, Luis [Florida State U.] (ORCID:0000000↗

Lattice Oxygen Redox Reversibility Modulation in Enhancing the Cycling Stability of Li-Rich Cathode Materials

The practical application of lithium-rich layered oxides is prohibited by the drawbacks such as severe capacity and voltage degradation resulting from unstable oxygen redox environment and the accompanied irreversible oxygen release. In this report a facile and effective strategy is proposed to regulate the oxygen redox chemistry via foreign Fe doping and its induced intrinsic transition metal (TM) doping as well as the in situ constructed spinel surface layer. The Fe doping, together with the induced intrinsic TM dual doping, can stabilize the lattice oxygen in the bulk due to the formed stronger Fe—O bond, and restrain the irreversible TM migration and then the undesirable phase transformation. More importantly, thermodynamical energy barrier of oxygen activation is dramatically decreased by the O 2p–Fe 3d charge-transfer, allowing stable oxygen redox activity. And the pre-constructed spinel layer can effectively stabilize the surface lattice oxygen and suppress harmful interfacial side-reactions. Such a simple optimizing method make the modified cathode exhibit a high specific capacity of 298 mAh g -1 at 0.2 C, outstanding cycling stability with a superior capacity and voltage retentions of 92.5% and 90.8%, respectively, after 400 cycles at 1 C. This study provides a new direction for developing advanced Li-ion batteries.

25 ENERGY STORAGE↗

In Situ Nanoscale Dynamics Imaging in a Proton‐Conducting Solid Oxide for Protonic Ceramic Fuel Cells

Abstract Hydrogen fuel cells and electrolyzers operating below 600 °C, ideally below 400 °C, are essential components in the clean energy transition. Yttrium‐doped barium zirconate BaZr 0.8 Y 0.2 O 3‐d (BZY) has attracted a lot of attention as a proton‐conducting solid oxide for electrochemical devices due to its high chemical stability and proton conductivity in the desired temperature range. Grain interfaces and topological defects modulate bulk proton conductivity and hydration, especially at low temperatures. Therefore, understanding the nanoscale crystal structure dynamics in situ is crucial to achieving high proton transport, material stability, and extending the operating range of proton‐conducting solid oxides. Here, Bragg coherent X‐ray diffractive imaging is applied to investigate in situ and in 3D nanoscale dynamics in BZY during hydration over 40 h at 200 °C, in the low‐temperature range. An unexpected activity of topological defects and subsequent cracking is found on a nanoscale covered by the macroscale stability. The rearrangements in structure correlate with emergent regions of different lattice constants, suggesting heterogeneous hydration. The results highlight the extent and impact of nanoscale processes in proton‐conducting solid oxides, informing future development of low‐temperature protonic ceramic electrochemical cells.

25 ENERGY STORAGE↗

Optically induced umklapp shift currents in striped cuprates

Motivated by recent experiments that observed low-frequency second-order optical responses in doped striped superconductors, here we investigate the nonlinear electrodynamics of systems exhibiting a charge density wave (CDW) order parameter. Due to the Bragg scattering off the CDW order, an incoming spatially homogeneous electric field in addition to zero momentum current generates umklapp currents that are modulated in space at momenta of the reciprocal CDW lattice. In particular, here we predict and microscopically evaluate the umklapp shift current, a finite momentum analog of the regular shift current which represents the second-order optical process that downconverts homogeneous AC electric field into low-frequency, zero momentum current. Specifically, we evaluate real-time response functions within mean-field theory via the Keldysh technique and use the Peierls substitution to compute observables at finite momenta in lattice models. We find that systems with certain lattice symmetries (such as inversion symmetry), where the regular shift current is disallowed, may give rise to the umklapp one. We apply our framework to investigate lattice symmetries in layered materials with helical-like stripes and show that both types of shift currents provide insight into the nature of intertwined phases of matter. Finally, we discuss the relation of our findings to recent experiments in striped superconductors. Published by the American Physical Society 2024

Materials Science↗

The performance of Schottky diodes as far-infrared modulators

The performance as a THz-frequency modulator of a small-area Schottky diode mounted in a corner-cube antenna is evaluated, including the effects of carrier inertia and dielectric relaxation. Calculations are performed for a 1.4-micron diameter diode operating at a carrier frequency of 2.252 THz and a modulation frequency of 8 GHz. The phase modulation is found to completely dominate the amplitude modulation. The performance is shown to be degraded well below the plasma frequency in the undepleted epilayer due to the presence of a second resonance caused by the interaction of the barrier capacitance and the effective inductance due to carrier inertia. An increase in epilayer doping (reducing the diode radius) may improve the single-sideband conversion efficiency by about 20 dB.

Grossman, Erich N.↗

Modular Assembly of FTO|Chromophore-Catalyst Hierarchical Films Based on Strong Dipole Interactions

Here, we have designed and characterized modular self-assembled hierarchical films containing a molecular catalyst tethered to an anchoring molecule by means of dipole-induced dipole interactions. In order to do so, two new Co III -based molecular catalyst candidates were designed, namely, [Co III L 1 (pyrr) 2 ]ClO 4 (Co1) and [Co III L 2 (pyrr) 2 ]ClO 4 (Co2), where L 1 and L 2 are the respective deprotonated forms of N,N′-[4,5-bis(dodecyloxy)-1,2-phenylene]dipicolinamide and N,N′-[4,5-bis(methoxyethoxy)-1,2-phenylene]dipicolinamide and were characterized by electrochemical, electronic, and film formation properties. Species Co1 and Co2 were deposited onto an anchor molecule such as octylphosphonic acid (OPA) or the chromophoric [Ru II (bpy PO3H ) 2 (bpy C7 )]Cl 2 (Ru) previously attached onto conductive fluorine-doped tin oxide (FTO). Four hierarchical films of the form substrate|anchor-catalyst were obtained, namely, FTO|OPA-Co1, FTO|OPA-Co2, FTO|Ru-Co1, and FTO|Ru-Co2, and the role of dipole-dipole interactions between anchor and catalyst modules was assessed. These newly synthesized hierarchical films were characterized by a host of surface-specific methods that include X-ray photoelectron spectroscopy, ellipsometry, X-ray fluorescence, and water contact angle, thus enabling an unprecedented level of analysis. Compared to the weak C-H van der Waals interactions exhibited by Co1, the presence of alkoxy chains in Co2 ensures stronger dipole-dipole interactions with the alkyl chain of the anchors due to O···H formation. The persistence of their redox properties, which include metal oxidation, and directionality of electron transport were probed suggesting direct relevance to catalytic processes such as water oxidation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Atomically engineering activation sites onto metallic 1T-MoS 2 catalysts for enhanced electrochemical hydrogen evolution

Engineering catalytic sites at the atomic level provides an opportunity to understand the catalyst’s active sites, which is vital to the development of improved catalysts. Here we show a reliable and tunable polyoxometalate template-based synthetic strategy to atomically engineer metal doping sites onto metallic 1T-MoS 2 , using Anderson-type polyoxometalates as precursors. Benefiting from engineering nickel and oxygen atoms, the optimized electrocatalyst shows great enhancement in the hydrogen evolution reaction with a positive onset potential of ~ 0 V and a low overpotential of –46 mV in alkaline electrolyte, comparable to platinum-based catalysts. First-principles calculations reveal co-doping nickel and oxygen into 1T-MoS 2 assists the process of water dissociation and hydrogen generation from their intermediate states. This research will expand on the ability to improve the activities of various catalysts by precisely engineering atomic activation sites to achieve significant electronic modulations and improve atomic utilization efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Scalable Manufacturing of Efficient Perovskite/Silicon Tandem Modules

Crystalline-Si (c-Si) technology produces excellent solar cells with conversion efficiencies of up to 26.7%—nearly their practical limit of 27%—and has been commercialized extensively to produce panels below $\$0.40$/W. Techno-economic analysis shows that module efficiency will continue to be a primary cost driver because of high balance-ofsystems costs, and there is no path to higher efficiencies with single-junction silicon cells. In this project, three research teams from University of North Carolina, Arizona State University and National Renewable National Laboratory worked together to develop perovskite-silicon tandem cells with a high throughput process which can handle 5000 wafers per hour, enabled by very low added CAPEX of ~$20k for a doctor-blade coater. This can potentially increase the module efficiency to 30% (with grid) with small increase of cost, which will drive down the cost of silicon modules to be at least 16% cheaper than present silicon PERC modules. We also explored the alternative narrow bandgap perovskites as silicon replacement for all perovskite tandem cells. This project has substantially advanced the progress of solution-process perovskitessilicon tandem solar cells and perovskite-perovskite tandem solar cells with many inventions and discoveries, evidenced by 18 publications and 6 invention disclosures. Several notable examples include 1) we developed the new idea of small pyramid in combination with solution grown perovskites and demonstrated record-efficiency of 28.5% for 1 cm2 on textured silicon bottom cells and 25.2% for 24 cm2 on chemically etched silicon bottom cells for perovskite-silicon tandem cells. 2) We developed perovskite ink that can coat perovskites onto texture silicon without voids;, and new device structure to enhance the yield of fabrication by reducing shunting 3) We identified the origin of open circuit voltage on mixed halide wide bandgap perovskites, and came with a solution for this problem, reducing the voltage loss to a record small value, which can potentially push the perovskite-silicon tandem cell efficiency to over 31%; 4) We have developed efficient alternative low bandgap semiconductors, i.e. gradient-doped Sn based perovskites by Ba ions, new oxide hole transport layers which increase the efficiency of perovskite/perovskite tandem cells reached record efficiency of 26.3%; 5) We developed bifacial perovskite/perovskite tandem cells by overcoming contacts issues and regaining light absorption, further boosting the equivalent efficiency to 29.3% under 1 sun illumination with 30% albedo light; 6) We developed the first all perovskite tandem module fabricated in air by discovery a combination of oxidization and reduction couples, yield an aperture efficiency of 21.6% for all perovskite mininodules, exceeding that of single junction perovskite minimodules. These discoveries not only accelerate the commercialization of perovskite-silicon tandem solar cells, but also provide guidance in designing other type of perovskite solar cell technologies.

14 SOLAR ENERGY↗