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Results for “modulation doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Generation of dissipative solitons in an actively mode-locked ultralong fibre laser

A single-pulse actively mode-locked fibre laser with a cavity length exceeding 1 km has been developed and investigated for the first time. This all-fibre erbium-doped laser has a normal intracavity dispersion and generates dissipative 8-ns solitons with a fundamental repetition rate of 163.8 kHz; the energy per pulse reaches 34 nJ. The implemented mode locking, based on the use of intracavity intensity modulator, provides self-triggering and high stability of pulsed lasing. A possibility of continuous tuning of the centre lasing wavelength in the range of 1558 - 1560 nm without any tunable spectral selective elements in the cavity is demonstrated. The tuning occurs when controlling the modulation signal frequency due to the forced change in the pulse repetition time (group delay) under the conditions of intracavity chromatic dispersion. (laser optics 2012)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Multi-band terahertz active device with complementary metamaterial

We describe a multi-band terahertz-active device using a composite structure made of complementary metamaterial and doped silicon that can be dynamically controlled. This special complementary metamaterial exhibits three resonances that produce three pass-bands. The pass-bands can be uniformly manipulated by exploiting the photoinduced characteristics of the doped silicon. Simulations were performed to analyze the magnetic field and surface current distributions. The simulation results agree well with experimental results obtained from terahertz time-domain spectroscopy. Using an 808-nm-wavelength laser beam, a modulation depth of up to 80% was obtained. In numerical simulations, we used a conductivity mode to characterize photoinduction. The development of multi-band terahertz-active devices has many potential applications, for example, in filters, modulators, switches, and sensors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Ion Migration Studies in Exfoliated 2D Molybdenum Oxide via Ionic Liquid Gating for Neuromorphic Device Applications

The formation of an electric double layer in ionic liquid (IL) can electrostatically induce charge carriers and/or intercalate ions in and out of the lattice which can trigger a large change of the electronic, optical, and magnetic properties of materials and even modify the crystal structure. Here, we present a systematic study of ionic liquid gating of exfoliated 2D molybdenum trioxide (MoO 3 ) devices and correlate the resultant electrical properties to the electrochemical doping via ion migration during the IL biasing process. A nearly 9 orders of magnitude modulation of the MoO 3 conductivity is obtained for the two types of ionic liquids that are investigated. In addition, notably rapid on/off switching was realized through a lithium-containing ionic liquid whereas much slower modulation was induced via oxygen extraction/intercalation. Time of flight–secondary ion mass spectrometry confirms the Li intercalation. Density functional theory (DFT) calculations have been carried out to examine the underlying metallization mechanism. Results of short-pulse tests show the potential of these MoO 3 devices as neuromorphic computing elements due to their synaptic plasticity.

2D materials↗
DOE OSTI2011

Large-area SnO{sub 2}: F thin films by offline APCVD

Highlights: {yields} Large-area (1245 mm x 635 mm) FTO thin films were successfully deposited by offline APCVD process. {yields} The as-prepared FTO thin films with sheet resistance 8-11 {Omega}/{open_square} and direct transmittance more than 83% exhibited better than that of the online ones. {yields} The maximum quantum efficiency of the solar cells based on offline FTO substrate was 0.750 at wavelength 540 nm. {yields} The power of the solar modules using the offline FTO as glass substrates was 51.639 W, higher than that of the modules based on the online ones. -- Abstract: In this paper, we reported the successful preparation of fluorine-doped tin oxide (FTO) thin films on large-area glass substrates (1245 mm x 635 mm x 3 mm) by self-designed offline atmospheric pressure chemical vapor deposition (APCVD) process. The FTO thin films were achieved through a combinatorial chemistry approach using tin tetrachloride, water and oxygen as precursors and Freon (F-152, C2H4F2) as dopant. The deposited films were characterized for crystallinity, morphology (roughness) and sheet resistance to aid optimization of materials suitable for solar cells. We got the FTO thin films with sheet resistance 8-11 {Omega}/{open_square} and direct transmittance more than 83%. X-ray diffraction (XRD) characterization suggested that the as-prepared FTO films were composed of multicrystal, with the average crystal size 200-300 nm and good crystallinity. Further more, the field emission scanning electron microscope (FESEM) images showed that the films were produced with good surface morphology (haze). Selected samples were used for manufacturing tandem amorphous silicon (a-Si:H) thin film solar cells and modules by plasma enhanced chemical vapor deposition (PECVD). Compared with commercially available FTO thin films coated by online chemical vapor deposition, our FTO coatings show excellent performance resulting in a high quantum efficiency yield for a-Si:H solar cells and ideal open voltage and short circuit current for a-Si:H solar modules.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Photoinduced metastable state with modulated Josephson coupling strengths in Pr 0.88 LaCe 0.12 CuO 4

We report an intense near-infrared pump, c-axis terahertz probe measurement on an electron-doped cuprate superconductor Pr 0.88 LaCe 0.12 CuO 4 with T c = 22 K. The major effect of the intense pump is to induce a splitting of Josephson plasma edge below Tc, similar to the observation on hole-doped cuprate La 1.905 Ba 0.095 CuO 4 in a superconducting state. The photoexcitation induced spectral change does not exhibit significant decay up to the longest measured time delay 210 ps. Furthermore, the result suggests that the intense near-infrared pump drives the system from a superconducting state with a uniform Josephson coupling to a metastable superconducting phase with modulated Josephson coupling strengths below T c .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Superconductivity in the orthorhombic phase of thermoelectric CsPb{sub x}Bi{sub 4−x}Te{sub 6} with 0.3≤x≤1.0

Experimental measurements clearly reveal the presence of bulk superconductivity in the CsPb{sub x}Bi{sub 4−x}Te{sub 6} (0.3≤x≤1.0) materials, i.e. the first member of the thermoelectric series of Cs[Pb{sub m}Bi{sub 3}Te{sub 5+m}], these materials have the layered orthorhombic structure containing infinite anionic [PbBi{sub 3}Te{sub 6}]{sup −} slabs separated with Cs{sup +} cations. Temperature dependences of electrical resistivity, magnetic susceptibility, and specific heat have consistently demonstrated that the superconducting transition in Cs{sub 0.96}Pb{sub 0.25}Bi{sub 3.75}Te{sub 6.04} occurs at T{sub c}=3.1 K, with a superconducting volume fraction close to 100% at 1.8 K. Structural study using aberration-corrected STEM/TEM reveals a rich variety of microstructural phenomena in correlation with the Pb-ordering and chemical inhomogeneity. The superconducting material Cs{sub 0.96}Pb{sub 0.25}Bi{sub 3.75}Te{sub 6.04} with the highest T{sub c} shows a clear ordered structure with a modulation wave vector of q≈a*/2+c*/1.35 on the a–c plane. Our study evidently demonstrates that superconductivity deriving upon doping of narrow-gap semiconductor is a viable approach for exploration of novel superconductors. - Graphical abstract: Bulk superconductivity is discovered in the orthorhombic Cs{sub 0.96}Pb{sub 0.22}Bi{sub 3.80}Te{sub 6.02} materials with the superconducting transition T{sub c}=3.1 K. The compound shows a clear ordered structure with a modulation wave vector of q≈a*/2+c*/1.35 on the a–c plane. - Highlights: • Bulk superconductivity is discovered in the orthorhombic CsPb{sub x}Bi{sub 4−x}Te{sub 6} materials. • The superconducting transition in Cs{sub 0.96}Pb{sub 0.22}Bi{sub 3.80}Te{sub 6.02} occurs at T{sub c}=3.1 K. • Physical property measurements concerning the bulk superconductivity were present. • Structural modulation due to Pb-ordering was observed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Subsurface spectroscopy of heterogeneous materials using optical wavefront shaping

Plastic-bonded explosives and propellants consist of energetic molecular crystals embedded in a polymer matrix that also includes additives, such as taggants, plasticizers, grit, antioxidants, etc. Furthermore, this heterogeneous composition renders these materials optically opaque, limiting optical characterization techniques (e.g., Raman spectroscopy) to probing chemical reactions at the sur-face. However, many reactions of interest are believed to occur inside the material where current optical techniques can not probe. To address this challenge, we have developed a new optical technique that utilizes feedback assisted wavefront shaping (using spatial light modulators) to focus probe light inside a heterogeneous material, such that we can perform subsurface spectroscopy. Recently, we demonstrated this technique by monitoring subsurface photodegradation and thermal degradation of Eu-doped molecular crystals using both fluorescence and Raman spectroscopy. Based off these successes we are now looking into improvements to this technique to allow for greater time resolution, including replacing our spatial light modulators with fast digital mirror devices, using ns optical phase conjugation, and self-healing optical beams.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Quasi-regenerative mode locking in a compact all-polarisation-maintaining-fibre laser

A novel technique of mode locking in erbium-doped all-polarisation-maintaining-fibre laser has been developed and preliminary investigated. The proposed quasi-regenerative technique combines the advantages of conventional active mode locking (when an intracavity modulator is driven by an independent RF oscillator) and regenerative mode locking (when a modulator is driven by an intermode beat signal from the laser itself). This scheme is based on intracavity intensity modulation driven by an RF oscillator being phase-locked to the actual intermode frequency of the laser. It features also possibilities of operation at multiple frequencies and harmonic mode-locking operation. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Modulation of a solid-state reversible fluorescent photoswitching based on a controllable photochromic pyrazolones

A novel solid-state reversible fluorescence photoswitching system (FPS) based on photochromism of photochromic pyrazolones has been developed by employing phosphor Sr{sub 2}P{sub 2}O{sub 7} co-doped with europium ion and chlorine ion (Sr{sub 2}P{sub 2}O{sub 7}–EC) and 1,3-diphenyl-4-(3-chlorobenzal)-5-hydroxypyrazole-4-phenylsemicarbazone (1a) as the fluorescence dye and the photochromic compound, respectively. With carefully selected components, the absorption band of the keto-form photochromic pyrazolones well overlaps with the emission peak of Sr{sub 2}P{sub 2}O{sub 7}–EC. The fluorescence emission intensity of Sr{sub 2}P{sub 2}O{sub 7}–EC is efficiently modulated by the photoisomerization of 1a with controlling the exposure time in the solid state. The fluorescence photoswitching system displayed high fluorescence quenching efficiency and remarkable fatigue resistance. It can be repeated 7 cycles without observable the changes of emission intensity. A fluorescence quenching efficiency can be achieved with a reversible colour change from white to yellow. - Graphical abstract: A novel fluorescence photoswitching system based on doping inorganic fluorescence dye into photochromic pyrazolones was constructed successfully. Its fluorescence emission could be efficiently modulated by the photoisomerization of pyrazolones. - Highlights: • A solid-state fluorescence photoswitching material was prepared. • Photoswitching is due to energy transfer between pyrazolone and fluorescence dye. • It exhibits excellent fluorescence contrast and fatigue resistance in the solid state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

From bidirectional rectifier to polarity-controllable transistor in black phosphorus by dual gate modulation

In complementary metal oxide semiconductor (CMOS) technology, well-defined unipolar transport in field-effect transistors (FETs) is a basic requirement for logic operations, which can be realized by controllable doping of the semiconductor with electrons (n-type) or holes (p-type). However, recent demonstration of polarity controllable transistors in 2D semiconductors provides a flexible way in circuit design with increased circuit integration density. Here we demonstrate the conversion of a bidirectional rectifier to a polarity-controllable transistor in black phosphorus (BP) by dual gate modulation. Electrical characterization of the BP bidirectional rectifier reveals a current rectification of ~35 at room temperature that increases to ~350 upon lowering the temperature to 110 K. Employing cross-linked PMMA as a top gate and combining it together with the global back gate of the SiO 2 substrate, well-defined unipolar transport (n- or p-type) in BP could get accessed. This successful realization of polarity-controllable transistor in BP provides an alternative design for development of BP logic electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Long-lived frequency shifts observed in a magnetic resonance force microscope experiment following microwave irradiation of a nitroxide spin probe

We introduce a spin-modulation protocol for force-gradient detection of magnetic resonance that enables the real-time readout of longitudinal magnetization in an electron spin resonance experiment involving fast-relaxing spins. We applied this method to observe a prompt change in longitudinal magnetization following the microwave irradiation of a nitroxide-doped perdeuterated polystyrene film having an electron spin-lattice relaxation time of T{sub 1}{approx}1ms. The protocol allowed us to discover a large, long-lived cantilever frequency shift. Based on its magnitude, lifetime, and field dependence, we tentatively attribute this persistent signal to deuteron spin magnetization created via transfer of polarization from nitroxide spins.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Thermally tuneable optical modulator adapted for differential signaling

An apparatus for optical modulation is provided. The apparatus includes a modulator structure and a heater structure. The modulator structure comprises a ring or disk optical resonator having a closed curvilinear periphery and a pair of oppositely doped semiconductor regions within and/or adjacent to the optical resonator and conformed to modify the optical length of the optical resonator upon application of a bias voltage. The heater structure comprises a relatively resistive annulus of semiconductor material enclosed between an inner disk and an outer annulus of relatively conductive semiconductor material. The inner disk and the outer annulus are adapted as contact regions for a heater activation current. The heater structure is situated within the periphery of the optical resonator such that in operation, at least a portion of the resonator is heated by radial conductive heat flow from the heater structure. The apparatus further includes a substantially annular isolation region of dielectric or relatively resistive semiconductor material interposed between the heater structure and the modulator structure. The isolation region is effective to electrically isolate the bias voltage from the heater activation current.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2014

Role of t{sub 2g} electrons in Mn-Tb coupling of multiferroic TbMnO{sub 3}

We investigate the effect of Cr-doping in polycrystalline TbMn{sub 1−x}Cr{sub x}O{sub 3} (x ≤ 6%) ceramics on the magnetism, ferroelectricity, and dielectricity. The Cr substitution gradually suppresses the ferroelectricity induced by the Mn spiral spin ordering, and results in a stronger modulation of polarization by magnetic field with increasing x. However, the transition temperature T{sub Tb} corresponding to onset of Tb magnetic ordering has barely shifted with Cr doping. In other words, although the Cr-doping obviously disrupts the Mn spiral spin ordering, the exchange field J{sub Mn-Tb} acting on the Tb moments from the Mn-spin structure is hardly impacted. Our work demonstrates that the e{sub g} electron of Mn{sup 3+} plays an important role in forming the Mn spiral spin order, but the f-d exchange interaction between the Mn 3d spins and the Tb 4f moments in multiferroic TbMnO{sub 3} almost involves only the t{sub 2g} electrons.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Surface Mechanoengineering of a Zr-based Bulk Metallic Glass via Ar-Nanobubble Doping to Probe Cell Sensitivity to Rigid Materials

In this paper, a new materials platform, utilizing the amorphous microstructure of bulk metallic glasses (BMGs) and the versatility of ion implantation, was developed for the fundamental investigation of cell responses to substrate-rigidity variations in the gigapascal modulus range, which was previously unattainable with polymeric materials. The surface rigidity of a Zr-Al- Ni-Cu-Y BMG was modulated with low-energy Ar-ion implantation owing to the impartment of Ar nanobubbles into the amorphous matrix. Surface softening was achieved due to the formation of nanobubble-doped transitional zones in the Zrbased BMG substrate. Bone-forming cell studies on this newly designed platform demonstrated that mechanical cues, accompanied with the potential effects of other surface properties (i.e. roughness, morphology, and chemistry), contributed to modulating cell behaviors. Cell adhesion and actin filaments were found to be less established on less stiff surfaces, especially on the surface with an elastic modulus of 51 GPa. Cell growth appeared to be affected by surface mechanical properties. A lower stiffness was generally related to a higher growth rate. Findings in this study broadened our fundamental understanding concerning the mechanosensing of bone cells on stiff substrates. It also suggests that surface mechano-engineering of metallic materials could be a potential strategy to promote osseointegration of such materials for bone-implant applications. Further investigations are proposed to fine tune the ion implantation variables in order to further distinguish the surface-mechanical effect on bone-forming cell activities from the contributions of other surface properties.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electric field modulation of thermovoltage in single-layer MoS{sub 2}

We study electric field modulation of the thermovoltage in single-layer MoS{sub 2}. The Seebeck coefficient generally increases for a diminishing free carrier concentration, and in the case of single-layer MoS{sub 2} reaches considerable large values of about S = −5160 μV/K at a resistivity of 490 Ω m. Further, we observe time dependent degradation of the conductivity in single layer MoS{sub 2}, resulting in variations of the Seebeck coefficient. The degradation is attributable to adsorbates from ambient air, acting as p-dopants and additional Coulomb potentials, resulting in carrier scattering increase, and thus decrease of the electron mobility. The corresponding power factors remain at moderate levels, due to the low conductivity of single layer MoS{sub 2}. However, as single-layer MoS{sub 2} has a short intrinsic phonon mean free path, resulting in low thermal conductivity, MoS{sub 2} holds great promise as high-performance 2D thermoelectric material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Titanium doped kagome superconductor CsV 3–x Ti x Sb 5 and two distinct phases

The vanadium-based kagome superconductor CsV 3 Sb 5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and a pseudogap pair density wave (PDW) coexisting with unconventional strong-coupling superconductivity. The origins of CDWs, unconventional superconductivity, and their correlation with different electronic states in this kagome system are of great significance, but so far, are still under debate. Chemical doping in the kagome layer provides one of the most direct ways to reveal the intrinsic physics, but remains unexplored. Here, we report, for the first time, the synthesis of Ti-substituted CsV 3 Sb 5 single crystals and its rich phase diagram mapping the evolution of intertwining electronic states. The Ti atoms directly substitute for V in the kagome layers. CsV 3–x Ti x Sb 5 shows two distinct superconductivity phases upon substitution. The Ti slightly-substituted phase displays an unconventional V-shaped superconductivity gap, coexisting with weakening CDW, PDW, AHE, and nematicity. The Ti highly-substituted phase has a U-shaped superconductivity gap concomitant with a short-range rotation symmetry breaking CDW, while long-range CDW, twofold symmetry of in-plane resistivity, AHE, and PDW are absent. Furthermore, we also demonstrate the chemical substitution of V atoms with other elements such as Cr and Nb, showing a different modulation on the superconductivity phases and CDWs. These findings open up a way to synthesise a new family of doped CsV 3 Sb 5 materials, and further represent a new platform for tuning the different correlated electronic states and superconducting pairing in kagome superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Radical Polymer-Based Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs) are an emerging platform for bioelectronic applications. Significant effort has been placed in designing advanced polymers that simultaneously transport both charge and ions (i.e., macromolecules that are mixed conductors). Furthermore, the considerations for mixed organic conductors are often different from the established principles that are well-known in the solid-state organic electronics field; thus, the discovery of new OECT macromolecular systems is highly desired. Here, we demonstrate a new materials system by blending a radical polymer (i.e., a macromolecule with a nonconjugated backbone and with stable open-shell sites at its pendant group) with a frequently used conjugated polymer. Specifically, poly(4-glycidyloxy-2,2,6,6-tetramethylpiperidine-1-oxyl) (PTEO) was blended with poly(3-hexylthiophene) (P 3 HT) to create thin films with distinct closed-shell and open-shell domains. Importantly, the sharp and unique oxidation–reduction (redox) potential associated with the radical moieties of the PTEO chain provided a distinct actuation feature to the blended films that modulated the ionic transport of the OECT devices. In turn, this led to controlled regulation of the doping of the P 3 HT phase in the composite film. By decoupling the ionic and electronic transport into two distinct phases and by using an ion transport phase with well-controlled redox activity, never-before-seen performance for a P3HT-based OECT was observed. That is, at loadings as low as 5% PTEO (by weight) OECTs achieved figure-of-merit (i.e., μC*) values >150 F V –1 cm –1 s –1 , which place the performance on the same order as state-of-the-art conjugated polymers despite the relatively common conjugated macromolecular moiety implemented. As such, this effort presents a design platform by which to readily create a tailored OECT response through strategic macromolecular selection and polymer processing.

36 MATERIALS SCIENCE↗