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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Presented are lumped equivalent circuit models for several coplaar waveguide discontinuities such as an open circuit, a series gap, and a symmetric step, and their element values as a function of the discontinuity physical dimensions. The model element values are de-embedded from measured S parameters. The frequency dependence of the effective dielectric constant is measured and compared to computed values.
The Propulsive Small Expendable Deployer System (ProSEDS) mission is a demonstration of the orbit lowering capabilities of an electrodynamic tether. The system is sequenced through various electrical modes, involving both open circuit and closed circuit configurations, so that the performance capabilities of the system can be studied. Ionospheric electrons are collected on the upper end of the bare tether, conducted through the tether, and returned to the ionosphere at the lower end (Delta I1 2nd stage) via the operation of a Hollow Cathode Plasma Contactor (HCPC). The working gas of the HCPC is xenon. Environmental plasma measurements and sheath potential are obtained from the Differential Ion Flux Probe w/Mass Analysis (DIFPM) and Langmuir Probe and Spacecraft Potential (LPSP) instruments. Each instrument has three sensors symmetrically placed about the strut section of the Delta 2nd stage. A magnetometer is also included in the ProSEDS instrumentation suite. An initial analysis of the rocket stage sheath behavior as a function of ProSEDS configuration (open or closed circuit), ambient ionospheric density, orientation to velocity vector (ram-wake influence), and magnetic field orientation is presented. An initial assessment on how well the plasma contactor grounded the rocket stage is also presented.
A method and apparatus for logging current-voltage (I-V) characteristic d of a solar cell module (10) in two modes using a portable instrument. One mode controls the load current through a circuit (36) in 256 equal intervals while voltage is measured from open circuit to at least halfway into the knee of the curve and the other mode controls the load voltage through a circuit (34) in 256 equal intervals from the lowest voltage measurement possible (short circuit) to at least halfway into the knee of the curve, under control of a microcomputer (12). All measurements are packed by discarding each measurement that is within 0.5% of the value predicted from two previous measurements, except every ninth (9th) measurement which is retained. The remaining data is further packed into a memory block of a detachable storage medium (14) by recording the data points in sequence following a header containing data common to all points, with each point having the value of the controlled parameter recorded as the number of increments from the previous point recorded followed by the measured value. The detachable storage medium is preferably a solid state device for reliability, and is transferable to a playback terminal which unpacks the data for analysis and display.
A cable system carries one or more insulated conductors completely enclosed within a shield having one end connected to ground. A lightning protector network connects the other end of the shield to ground. The protector network is normally open circuited and becomes only short circuited in response to a momentary abnormal surge voltage induced in the shield. The protector network's open to short impedance change completes a conductive circuit path between the shield and the two grounded ends for conducting a shield current which has the desired effect of protecting the signal carrying conductors in the cable from the large surge voltage.
This study demonstrates the potential of sonic lift-off (SLO) technology for repeatable substrate reuse in gallium arsenide (GaAs)–based photovoltaics (PVs), offering a pathway toward cost effective production for terrestrial PV applications. Single-junction GaAs solar cells fabricated on acoustically spalled substrates achieved performance metrics comparable with those grown on standard commercial substrates, exhibiting short-circuit current densities (J sc ) of approximately 26.2–26.4 mA/cm 2 , open-circuit voltages (V oc ) around 1001 mV, fill factors (FFs) of 84%, and AM1.5G efficiencies near 22%. These results confirm that one reuse cycle can be realized without a performance penalty, offering a direct pathway to reducing substrate cost in fabrication. Furthermore, subsequent reuse of the substrates highlighted critical challenges, as devices fabricated from reused substrates showed significant degradation in performance (J sc of 15.5 mA/cm 2 , V oc of 748 mV, FF of 72%, and efficiency of 8%), primarily due to degradation of the epitaxial structure resulting from repeated spalling cycles.
A numerical modeling technique is utilized to investigate the response of a UH-60A helicopter to both lightning and nuclear electromagnetic pulses (NEMP). The analytical approach involves the three-dimensional time domain finite-difference solutions of Maxwell's equations. Both the external currents and charges as well as the internal electromagnetic fields and cable responses are computed. Results of the analysis indicate that, in general, the short circuit current on internal cables is larger for lightning, whereas the open-circuit voltages are slightly higher for NEMP. The lightning response is highly dependent upon the rise time of the injected current as was expected. The analysis shows that a coupling levels to cables in a helicopter are 20 to 30 dB larger than those observed in fixed-wing aircraft.
Grading of bandgap by alloying CdTe with selenium to form a CdSe x Te 1–x /CdTe-graded bilayer device has led to a device efficiency over 19%. A CdSe x Te 1–x absorber would increase the short-circuit current due to its lower bandgap but at the expense of open-circuit voltage. It has been demonstrated that adding a CdTe layer at the back of such a CdSe x Te 1–x film reduces the voltage deficit caused by the lower bandgap of absorber from selenium alloying while maintaining the higher short-circuit current. This leads to a photovoltaic device that draws advantage from both materials with an efficiency greater than either of them. In this report there is a detailed account using device data, ultraviolet photoelectron spectroscopy, electron microscopy, and first-principles density functional theory modeling is provided, which shows that CdTe acts as an electron reflector for CdSe x Te 1–x .
A nuclear photovoltaic battery uses scintillator to convert radiation into visible light, which is then collected by a photovoltaic (PV) cell to generate electricity. If the radiation is gamma-rays emitted from external sources, the battery may also be referred as gammavoltaic battery. In this study, a polycrystalline CdTe solar cell was optically coupled with a 2.0 cm × 2.0 cm × 1.0 cm Gadolinium Aluminum Gallium Garnet (GAGG) scintillator, and the resulting device was tested using intense gamma radiation fields from a Cs-137 (1.5 kRad/h) and a Co-60 (10 kRad/h) irradiator. Measurements with Cs-137 provided a maximum power output (P max ) of ~288 nW, with a short-circuit current density (J sc ) of ~1.22 μA/cm 2 and an open-circuit voltage (V oc ) of ~0.34 V. In contrast, Co-60 irradiator gave a P max of 1.5 μW, with a J sc of ~4.73 μA/cm 2 and a V oc of ~0.38 V. The CdTe was also paired with a Lutetium-Yttrium Oxyorthosilicate (LYSO) crystal and tested with the Cs-137 source. The experiment presents a scalable option to reach to higher power outputs by harvesting gamma radiation fields in many cases where high radiation field demands heavy shielding and is often regarded as unwanted waste.
Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 microns. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have a minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.
New protective circuits have been developed for power-factor ac motor controllers. Circuits prevent direct current and consequent motor heating that would normally result from failure of solid-state switch in controller. Single-phase power-factor controller with short detector compensates for short-circuit failure in either direction by applying full power to motor. Controller with open detector compensates for open-circuit failure in either direction by turning off power to motor.
Two-transformer, two-lamp circuit monitors the continuity of ac ground, neutral, and phase wires. The circuit gives different visual indications if any one of the three lines should become open circuited.
Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.
Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.
An enhanced model for coupled inductors with significant fringing effect is developed in the form of equivalent circuit. The equivalent circuit is derived from a physical model that captures the flux paths through a leakage inductor and two mutual inductors on the primary and secondary side. A mutual winding resistor is added in parallel with the mutual inductor to model the winding loss affected by the fringing flux that penetrates the winding. The equivalent circuit is verified by finite-element simulation (FES) and successfully predicts the open-circuit winding loss and winding loss variation with phase-shift impact.
Circuit prevents battery cell overcharging by detecting and reducing the charging voltage to the open-circuit voltage of the battery when this current falls to a predetermined value. The voltage control depends on the fact that the charging current falls significantly when the battery nears its fully charged state.
Photovoltaic characteristics have been measured on a large number of crucible-grown lithium-containing solar cells irradiated by 1-MeV electrons to fluences ranging from 3 x 10 to the 13th power to 3 x 10 to the 15th power electrons per sq cm. These measurements have established empirical relationships between cell photovoltaic parameters and lithium donor density gradient. Short-circuit current and maximum power measured immediately after irradiation decrease logarithmically with lithium gradient. Open-circuit voltage increases logarithmically with lithium gradient both immediately after irradiation and after recovery, the degree of recovery being strongly gradient-dependent at high fluence. As a result, the maximum power and the power at 0.43 V after recovery from 3 x 10 to the 15th power electrons per sq cm increase with increasing lithium gradient.
Tested ground-fault interruption circuit utilizing Hall-effect device to sense differential current in magnetic core tips and opens circuit.
A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.