Results for “ordered growth” — Page 18

NASA NTRS2001

Homoepitaxial "Web Growth" of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces

Homoepitaxial CVD growth of thin lateral cantilevers emanating from the edges of mesa patterns dry-etched into on-axis commercial 4H-SiC substrates prior to growth is reported. Cantilevers on the order of a micrometer thick extending tens of micrometers from the edge of a mesa have been grown. The termination of vertically propagating screw dislocations, including a micropipe, that are overgrown by the cantilevers has been demonstrated, in large part because the crystal structure of the cantilevers is established laterally from the mesa sidewalls. This technique could help reduce performance-degrading dislocations in SiC electrical devices.

Neudeck, Philip G.↗

NASA NTRS2017

Planetesimals Born Big by Clustering Instability?

Roughly 100km diameter primitive bodies (today's asteroids and TNOs; [1]) are thought to be the end product of so-called "primary accretion". They dominated the initial mass function of planetesimals, and precipitated the onset of a subsequent stage, characterized by runaway gravitational effects, which proceeded onwards to planetary mass objects, some of which accreted massive gas envelopes. Asteroids are the parents of primitive meteorites; meteorite data suggest that asteroids initially formed directly from freelyfloating nebula particles in the mm-size range. Unfortunately, the process by which these primary 100km diameter planetesimals formed remains problematic. We review the most diagnostic primitive parent body observations, highlight critical aspects of the nebula context, and describe the issues facing various primary accretion models. We suggest a path forward that combines current scenarios of "turbulent concentration" (TC) and "streaming instabilities" (SI) into a triggered formation process we call clustering instability (CI). Under expected conditions of nebula turbulence, the success of these processes at forming terrestrial region (mostly silicate) planetesimals requires growth by sticking into aggregates in the several cm size range, at least, which is orders of magnitude more massive than allowed by current growth-by-sticking models using current experimental sticking parameters [2-4]. The situation is not as dire in the ice-rich outer solar system; however, growth outside of the snowline has important effects on growth inside of it [4] and at least one aspect of outer solar system planetesimals (high binary fraction) supports some kind of clustering instability.

Cuzzi, Jeffrey N.↗

NASA NTRS2017

Planetesimals Born Big by Clustering Instability?

Roughly 100km diameter primitive bodies (today's asteroids and TNOs; [1]) are thought to be the end product of so-called "primary accretion". They dominated the initial mass function of planetesimals, and precipitated the onset of a subsequent stage, characterized by runaway gravitational effects, which proceeded onwards to planetary mass objects, some of which accreted massive gas envelopes. Asteroids are the parents of primitive meteorites; meteorite data suggest that asteroids initially formed directly from freelyfloating nebula particles in the mm-size range. Unfortunately, the process by which these primary 100km diameter planetesimals formed remains problematic. We review the most diagnostic primitive parent body observations, highlight critical aspects of the nebula context, and describe the issues facing various primary accretion models. We suggest a path forward that combines current scenarios of "turbulent concentration" (TC) and "streaming instabilities" (SI) into a triggered formation process we call clustering instability (CI). Under expected conditions of nebula turbulence, the success of these processes at forming terrestrial region (mostly silicate) planetesimals requires growth by sticking into aggregates in the several cm size range, at least, which is orders of magnitude more massive than allowed by current growth-by-sticking models using current experimental sticking parameters [2-4]. The situation is not as dire in the ice-rich outer solar system; however, growth outside of the snowline has important effects on growth inside of it [4] and at least one aspect of outer solar system planetesimals (high binary fraction) supports some kind of clustering instability

Asteroids↗

DOE OSTI2022

Growing neoclassical tearing modes seeded via transient-induced-multimode interactions

Nonlinear extended magnetohydrodynamics simulations demonstrating seeding of neoclassical tearing modes (NTMs) via magnetohydrodynamics-transient-induced multimode interactions are presented. Simulations of NTMs are enabled by two recent NIMROD code developments: the implementation of heuristic neoclassical stresses and the application of transient magnetic perturbations (MPs) at the boundary. NTMs are driven unstable by the inherently pressure driven kinetic bootstrap current, which arises due to collisional viscosity between passing and trapped electrons. These simulations use heuristic closures that model the neoclassical electron and ion stresses. NTM growth requires a seed island, which is generated by a transiently applied MP in simulations. The capability is demonstrated using kinetic-based reconstructions with flow of a DIII-D ITER Baseline Scenario discharge (La Haye et al., in Proceedings IAEA FEC, 2020). The applied MP seeds a 2/1 NTM that grows in two phases: a slow growth phase followed by a faster robust growth phase. Additionally, an evolving sequence of higher order core modes are excited at first. Power transfer analysis shows that nonlinear interactions between the core modes and the 2/1 helps drive the initial slow growth. Once the induced 2/1 magnetic island reaches a critical width, the NTM transitions to faster robust growth, which is well described by the nonlinear modified Rutherford equation. Furthermore, this work highlights the role of nonlinear mode coupling in seeding NTMs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

NASA NTRS2003

Crystal Growth Rate Dispersion: A Predictor of Crystal Quality in Microgravity?

In theory macromolecular crystals grow through a process involving at least two transport phenomena of solute to the crystal surface: diffusion and convection. In absence of standard gravitational forces, the ratio of these two phenomena can change and explain why crystal growth in microgravity is different from that on Earth. Experimental evidence clearly shows, however, that crystal growth of various systems is not equally sensitive to reduction in gravitational forces, leading to quality improvement in microgravity for some crystals but not for others. We hypothesize that the differences in final crystal quality are related to crystal growth rate dispersion. If growth rate dispersion exists on Earth, decreases in microgravity, and coincides with crystal quality improvements then this dispersion is a predictor for crystal quality improvement. In order to test this hypothesis, we will measure growth rate dispersion both in microgravity and on Earth and will correlate the data with previously established data on crystal quality differences for the two environments. We present here the first crystal growth rate measurement data for three proteins (lysozyme, xylose isomerase and human recombinant insulin), collected on Earth, using hardware identical to the hardware to be used in microgravity and show how these data correlate with crystal quality improvements established in microgravity.

Kephart, Richard D.↗

NASA NTRS1993

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Huber, Daniel A.↗

NASA NTRS1988

Creep life prediction based on stochastic model of microstructurally short crack growth

A nondimensional model of microstructurally short crack growth in creep is developed based on a detailed observation of the creep fracture process of 304 stainless steel. In order to deal with the scatter of small crack growth rate data caused by microstructural inhomogeneity, a random variable technique is used in the model. A cumulative probability of the crack length at an arbitary time, G(bar a, bar t), and that of the time when a crack reaches an arbitary length, F(bar t, bar a), are obtained numerically by means of a Monte Carlo method. G(bar a, bar t), and F(bar t, bar a) are the probabilities for a single crack. However, multiple cracks generally initiate on the surface of a smooth specimen from the early stage of creep life to the final stage. TAking into account the multiple crack initiations, the actual crack length distribution observed on the surface of a specimen is predicted by the combination of probabilities for a single crack. The prediction shows a fairly good agreement with the experimental result for creep of 304 stainless steel at 923 K. The probability of creep life is obtained from an assumption that creep fracture takes place when the longest crack reaches a critical length. The observed and predicted scatter of the life is fairly small for the specimens tested.

Kitamura, Takayuki↗

NASA NTRS1989

Creep life prediction based on stochastic model of microstructurally short crack growth

A nondimensional model of microstructurally short crack growth in creep is developed based on a detailed observation of the creep fracture process of 304 stainless steel. In order to deal with the scatter of small crack growth rate data caused by microstructural inhomogeneity, a random variable technique is used in the model. A cumulative probability of the crack length at an arbitrary time, G(bar a, bar t), and that of the time when a crack reaches an arbitrary length, F(bar t, bar a), are obtained numerically by means of a Monte Carlo method. G(bar a, bar t), and F(bar t, bar a) are the probabilities for a single crack. However, multiple cracks generally initiate on the surface of a smooth specimen from the early stage of creep life to the final stage. Taking into account the multiple crack initiations, the actual crack length distribution observed on the surface of a specimen is predicted by the combination of probabilities for a single crack. The prediction shows a fairly good agreement with the experimental result for creep of 304 stainless steel at 923 K. The probability of creep life is obtained from an assumption that creep fracture takes place when the longest crack reaches a critical length. The observed and predicted scatter of the life is fairly small for the specimens tested.

Kitamura, Takayuki↗

NASA NTRS1992

The secondary outburst maximum of T Coronae Borealis - Implications for the physics of accretion disks

The hypothesis of Webbink (1976) that the accretion of a torus of matter onto a main-sequence star caused secondary maxima during the 1866 and 1946 eruptions of the recurrent nova T CrB is examined. Simple 1D calculations show that the accretion disk viscosity must increase with time to produce light curves resembling observations. It is inferred that the physical mechanism responsible for producing the viscous dissipation in the accretion disk has a fast growth rate and saturates to a viscosity parameter of order unity. The good agreement between parameters estimated from observations and those derived from a physical mechanism suggests that the growth rate instability identified by Balbus and Hawley (1991) is a promising source for accretion disk viscosity.

Cannizzo, John K.↗

NASA NTRS2000

Phase Shift Interferometer and Growth Set Up to Step Pattern Formation During Growth From Solutions. Influence of the Oscillatory solution Flow on Stability

We have assembled an experimental setup based on Michelson interferometry with the growing crystal surface as one of the reflective surfaces. The crystallization part of the device allows optical monitoring of a face of a crystal growing at temperature stable within 0.05 C in a flow of solution of controlled direction and speed. The reference arm of the interferometer contains a liquid crystal element that allows controlled shifts of the phase of the interferograms. We employ an image-processing algorithm, which combines five images with a pi/2 phase difference between each pair of images. The images are transferred to a computer by a camera capable of capturing 60 frames per second. The device allows data collection on surface morphology and kinetics during the face layers growth over a relatively large area (approximately 4 sq. mm) in situ and in real time during growth. The estimated depth resolution of the phase shifting interferometry is approximately 50 Angstroms. The data will be analyzed in order to reveal and monitor step bunching during the growth process. The crystal chosen as a model for study in this work is KH2PO4 (KDP). This optically non-linear material is widely used in frequency doubling applications. There have been a number of studies of the kinetics of KDP crystallization that can serve as a benchmark for our investigations. However, so far, systematic quantitative characteristics of step interaction and bunching are missing. We intend to present our first quantitative results on the onset, initial stages and development of instabilities in moving step trains on vicinal crystal surfaces at varying supersaturation, flow rate, and flow direction. Behavior of a vicinal face growing from solution flowing normal to the steps and periodically changing its direction in time was considered theoretically. It was found that this oscillating flow reduces both stabilization and destabilization effects resulted from the unidirectional solution flow directed up the step stream and down the step stream. This reduction of stabilization and destabilization comes from effective mixing which entangles the phase shifts between the spatially periodic interface perturbation and the concentration wave induced by this perturbation. Numerical results and simplified mixing criterion will be discussed.

Chernov, Alex A.↗

NASA NTRS1999

Photoluminescence Studies of ZnSe Starting Materials and Vapor Grown Bulk Crystals

Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. The purification effect of pre-growth heat treatments and the PVT process is evidenced from the GDMS results which showed orders of magnitude reduction in the Li and Na concentration and a factor of 3 reduction in the 0 content after growth. The PL spectra showed that the strong emissions associated with Li (or Na) in one of the starting materials disappeared after growth. To evaluate the contamination of the crystal during the high temperature growth process three growth runs were processed using similar growth parameters but with different furnace environments. The GDMS results showed orders of magnitude increase in the Al and Si contents after growth. The PL spectra suggest that the Al contamination was originated from the fused silica ampoule and the Inconel cartridge might have been the cause for the broad Cu green and Cu red bands observed in one of the grown crystal.

Su, Ching-Hua↗

DOE OSTI2021

Self-consistent, high-order spatial profiles in a model for two-fluid turbulent mixing

A Reynolds-averaged Navier-Stokes model is presented with the property that it admits self-consistent, high-order spatial profiles in simulations of two-fluid turbulent mixing layers. Whereas previous models have been limited by the assumption of a linear mixing profile, the present paper relaxes this assumption and, as a result, is shown to achieve much better agreement with experimental profiles. Similarity analysis is presented to derive constraints on model coefficients to enforce desired self-similar growth rates that are fully consistent with the high-order spatial profiles. Through this similarity analysis, it is shown that care must be taken in model construction, as it is possible to construct certain terms in such a way as to leave growth rates unconstrained. This model, termed the k-Φ-L-a-V model, is then applied in simulations of Rayleigh-Taylor, Richtmyer-Meshkov, and Kelvin-Helmholtz mixing layers. Overall, these simulations confirm that the expected growth parameters are recovered and high-order spatial profiles are maintained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Microkinetic insights into the role of catalyst and water activity on the nucleation, growth, and dissolution during COF-5 synthesis

The chemical pathway for synthesizing covalent organic frameworks (COFs) involves a complex medley of reaction sequences over a rippling energy landscape that cannot be adequately described using existing theories. Even with the development of state-of-the-art experimental and computational tools, identifying primary mechanisms of nucleation and growth of COFs remains elusive. Other than empirically, little is known about how the catalyst composition and water activity affect the kinetics of the reaction pathway. In this work, for the first time, we employ time-resolved in situ Fourier transform infrared spectroscopy (FT-IR) coupled with a six-parameter microkinetic model consisting of ~10 million reactions and over 20 000 species. The integrated approach elucidates previously unrecognized roles of catalyst pK a on COF yield and water on growth rate and size distribution. COF crystalline yield increases with decreasing pK a of the catalysts, whereas the effect of water is to reduce the growth rate of COF and broaden the size distribution. The microkinetic model reproduces the experimental data and quantitatively predicts the role of synthesis conditions such as temperature, catalyst, and precursor concentration on the nucleation and growth rates. Furthermore, the model also validates the second-order reaction mechanism of COF-5 and predicts the activation barriers for classical and non-classical growth of COF-5 crystals. The microkinetic model developed here is generalizable to different COFs and other multicomponent systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2001

Influence of Solutocapillary Convection on Macrovoid Defect Formation in Polymeric Membranes

Macrovoids (MVs) are large (10-50 micrometers) pores often found in polymeric membranes prepared via phase-inversion techniques. They are generally considered undesirable, as they adversely affect the permeability properties and performance of polymeric membranes for microfiltration, ultrafiltration, and reverse osmosis. However, MVs can be useful in certain thin-film applications in which vapor transmission is necessary, or for use as reservoirs for enzymes or liquid membrane material. If more could be learned about the nature and causes of MV formation, it might be possible to devise techniques to control and/or prevent MV formation that are more effective than those currently employed. Two hypotheses for the MV growth mechanism have been advanced. Reuvers proposed that once initiated, MV growth can be attributed to diffusion of (primarily) solvent to the MV nuclei. Because this mechanism does not involve gross movement of the MV, the presence or absence of body forces such as buoyancy should not significantly affect MV growth. On the other hand, Shojaie et al. proposed that solutocapillary convection induced by a steep surface-tension gradient along the MV/bulk solution interface enhances mass transfer to the growing MV. This interfacial convection exerts a force that pulls the growing MV downward into the casting solution. Both buoyancy and viscous drag hinder MV growth by inhibiting this motion. Thus, removing the buoyancy force by casting in microgravity should augment MV growth according to this hypothesis. Whereas neither surface tension nor gravity has a significant effect on MV growth according to the first hypothesis, buoyancy forces should be important if the second hypothesis is correct. The overall goal of this research is to test these two hypotheses in order to improve our understanding of the MV growth processing solvent-cast polymeric membranes. Studying MV growth in low-gravity conditions is pivotal to our ability to discriminate between these two hypotheses.

Pekny, M. R.↗

NASA NTRSDate not supplied

Simulation of etch pit formation through active sites in carbon fiber micro-structures

Erosion of carbon due to oxidation does not occur uniformly but through localized etch pit formation as a result of active surface sites. In this work we demonstrate a newly developed capability to capture pitting of carbon fiber microstructures such as FiberForm, which is commonly used as the base material for NASA’s spacecraft ablative thermal protection systems (TPS). The simulations are performed at the meso-scale in order to capture the pit formation and growth using direct simulation Monte Carlo (DSMC), specifically using the Stochastic PArallel Rarefied-gas Time-accurate Analyzer (SPARTA) code. Legacy and latest models both assume uniform reactivity of carbon surface sites with oxygen even at the meso-scale level. However, in reality the carbon surface has locally different reaction rates due to the presence of defects at the atomic scale. The defective nature of these sites enhances their reactivity with atmospheric gases compared to the non-defective sites (2-3 orders of magnitude) and are termed as “active sites”. Thus, these sites tend to be the first to react and eventually get removed through the formation of gasses such as CO, CO2, and CN. Their removal results in all the neighboring atoms becoming defective, thus leading to chain reaction of localized carbon removal and formation of etch pits. Capturing the formation of pits during the ablation simulation of carbon micro-structures is critical to predicting their structural failure. Recently a detailed surface chemistry framework was developed in SPARTA, capable of incorporating various reaction mechanisms such as adsorption, desorption, Eley-Rideal (ER) and Langmuir-Hinshelwood (LH) mechanisms. We have implemented the capability of a single surface having multiple site sets with different reactivities within this framework. We have used this feature to model the presence of active sites on carbon surfaces, whose reactivity is orders of magnitude higher than that of the passive sites due to the presence of defects. The active site fraction is a property of surface elements within SPARTA and is directly proportional to the local reactivity of each surface element. By introducing an initial distribution of the active site fraction across the carbon surface and propagating it in a manner that mimics the evolution of real reacting carbon surfaces, we can capture the formation and growth of etch pits as a result of surface consumption reactions such as oxidation.

DSMC↗

NASA NTRSDate not supplied

Simulation of Etch Pit Formation in DSMC Through Active Sites in Carbon Fiber Micro-Structures

Erosion of carbon due to oxidation does not occur uniformly but through localized etch pit formation because of active surface sites. In this work we demonstrate a newly developed capability to capture pitting of carbon fiber microstructures such as FiberForm, which is commonly used as the base material for NASA’s spacecraft ablative thermal protection systems (TPS). The simulations are performed at the meso-scale in order to capture the pit formation and growth using direct simulation Monte Carlo (DSMC), specifically using the Stochastic PArallel Rarefied-gas Time-accurate Analyzer (SPARTA) code. Legacy and latest models both assume uniform reactivity of carbon surface sites with oxygen even at the meso-scale level. However, in reality the carbon surface has locally different reaction rates due to the presence of defects at the atomic scale. The defective nature of these sites enhances their reactivity with atmospheric gases compared to the non-defective sites (2-3 orders of magnitude) and are termed as “active sites”. Thus, these sites tend to be the first to react and eventually get removed through the formation of gases such as CO, CO2, and CN. Their removal results in all the neighboring atoms becoming defective, thus leading to chain reaction of localized carbon removal and formation of etch pits. Capturing the formation of pits during the ablation simulation of carbon micro-structures is critical to predicting their structural failure. Recently a detailed surface chemistry framework was developed in SPARTA, capable of incorporating various detailed surface reaction mechanisms. We have implemented the capability of a single surface having multiple site sets with different reactivities within this framework. We have used this feature to model the presence of active sites on carbon surfaces, whose reactivity is orders of magnitude higher than that of the passive sites due to the presence of defects. The active site fraction is a property of surface elements within SPARTA and is directly proportional to the local reactivity of each surface element. By introducing an initial distribution of the active site fraction across the carbon surface and propagating it in a manner that mimics the evolution of real reacting carbon surfaces, we can capture the formation and growth of etch pits as a result of surface consumption reactions such as oxidation.

DSMC↗

NASA NTRSDate not supplied

DSMC Simulation of Etch Pit Formation Through Active Sites in Carbon Fiber Micro-Structures

Erosion of carbon due to oxidation does not occur uniformly but through localized etch pit formation because of active surface sites. In this work we demonstrate a newly developed capability to capture pitting of carbon fiber microstructures such as FiberForm, which is commonly used as the base material for NASA’s spacecraft ablative thermal protection systems (TPS). The simulations are performed at the meso-scale in order to capture the pit formation and growth using direct simulation Monte Carlo (DSMC), specifically using the Stochastic PArallel Rarefied-gas Time-accurate Analyzer (SPARTA) code. Legacy and latest models both assume uniform reactivity of carbon surface sites with oxygen even at the meso-scale level. However, in reality the carbon surface has locally different reaction rates due to the presence of defects at the atomic scale. The defective nature of these sites enhances their reactivity with atmospheric gases compared to the non-defective sites (2-3 orders of magnitude) and are termed as “active sites”. Thus, these sites tend to be the first to react and eventually get removed through the formation of gases such as CO, CO2, and CN. Their removal results in all the neighboring atoms becoming defective, thus leading to chain reaction of localized carbon removal and formation of etch pits. Capturing the formation of pits during the ablation simulation of carbon micro-structures is critical to predicting their structural failure. Recently a detailed surface chemistry framework was developed in SPARTA, capable of incorporating various detailed surface reaction mechanisms. We have implemented the capability of a single surface having multiple site sets with different reactivities within this framework. We have used this feature to model the presence of active sites on carbon surfaces, whose reactivity is orders of magnitude higher than that of the passive sites due to the presence of defects. The active site fraction is a property of surface elements within SPARTA and is directly proportional to the local reactivity of each surface element. By introducing an initial distribution of the active site fraction across the carbon surface and propagating it in a manner that mimics the evolution of real reacting carbon surfaces, we can capture the formation and growth of etch pits as a result of surface consumption reactions such as oxidation.

DSMC↗

DOE OSTI2023

Linear instabilities in the hot-ion regime in a high-field spherical tokamak

Abstract The present operating high-field compact spherical tokamak ST40 is an important step toward an ST-based fusion reactor (Gryaznevich and Asunta 2017 Fusion Eng. Des. 123 177; McNamara 2023 Nucl. Fusion 63 054002). Temperature and density profiles and their uncertainties in recent hot ion ST40 plasmas with central ion temperatures exceeding 8.6 keV, have been inferred using an integrated analysis of several diagnostics including line-of-sight integration and volume average measurements, as well as limited profile information from a charge-exchange-recombination spectrometer. A linear gyrokinetic stability analysis has been carried out to identify the most unstable micro-instabilities in these hot ion plasmas. In one of these plasmas, it is found that linear growth rates of both ion- and electron-scale ( k θ ρ s ⩾ 0.2 where k θ is the poloidal wavenumber and ρ s is the ion gyro-radius with sound speed) modes decrease from the edge toward the core of the plasma (i.e. from ρ = 0.8 to 0.3 where ρ is the square root of the normalized magnetic flux), while the change of linear growth rates at k θ ρ s < 0.2 is non-monotonic. In particular, at ρ = 0.3 no unstable mode was found at k θ ρ s > 5 , and about an order of magnitude reduction in the maximum linear growth rate in the ion-scale wavenumber range of 0.2 ⩽ k θ ρ s < 1 is seen at ρ = 0.3 compared with the ρ = 0.8 location. It is found through parametric scans that while the ion temperature gradient (ITG) mode/trapped electron mode (TEM) and kinetic ballooning mode (KBM)/kinetic shear Alfvén (KSA) mode are more important in the plasma core, ubiquitous mode (UM) is found to be the important ion-scale instability at ρ ⩾ 0.6 . At ρ = 0.8, two instabilities are found at the electron scale, with one being the typical electrostatic electron temperature gradient (ETG) mode at ρ e scale and beyond and the other being an unidentified low-real-frequency instability (at the intermediate scale between electron and ion gyroradii) which can propagate in the ion direction and is driven by ETG. The existence of UM at the ion scale and the low-real-frequency instability and ETG mode at the electron scale at ρ = 0.8 is supported by an extensive linear gyrokinetic stability analysis of another ST40 hot ion plasma in a wider parametric range, taking into account the uncertainties in the experimental profiles.

ubiquitous mode↗