Semiconductor wafer improvement through photoengraving Final report, 1 Mar. - 1 Jul. 1965
Etching resist as masking agent in photoengraving silicon semiconductor wafers and process specifications
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Etching resist as masking agent in photoengraving silicon semiconductor wafers and process specifications
Gamma, electron, and proton radiation exposures of P-channel, enhancement, metal oxide semiconductor, and field effect transistors
Device design, fabrication process, transistor evaluation, and test methods in development of 10 nanosecond semiconductor switch
Commercial applications of aerospace developed semiconductor devices and microelectronics
Radiation effects in semiconductors - carrier lifetimes in irradiated materials, recombination luminescence, and thermal stability of irradiation induced defects
Electrophysical instabilities of metal oxide semiconductors determined by capacitance-voltage curve analysis
Simultaneous fabrication of enhancement mode metal oxide semiconductor transistors in epitaxial material
Electron-phonon interaction in III to V semiconductors and temperature dependence of attenuation in quartz and tourmaline
Semiconductor injection laser for continuous operation at room temperature in visible wavelength range
Semiconductor radiation damage from high-energy electron and proton radiation
Absorption spectra of boron thin films and studies of structure of semiconductor thin films
Preparation of silicon wafer surface before photoresist application to improve resist adhesion - High resolution photoengraving for semiconductor devices
Radiation effect on recombination luminescence and tunneling in semiconductors
Manufacture of lithium-drifted silicon surface- barrier semiconductor counters
Transducer techniques for generating acoustic waves evaluated in study of electron-phonon interactions in semiconductors
Photoengraving process for semiconductor devices
Atomic scattering contribution to pulse height defect and energy dispersion of heavy ions in semiconductor detectors
Equivalent circuit evaluation of theoretical potential and limitations of millimeter wave semiconductor diode detectors, mixers and frequency multipliers