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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Identification and Control of Gravity Related Defect Formation During Melt Growth of Electro-Optic Single Crystals Bismuth Silicate(Bi12SiO20)

A research carried out under Award Number NAG8-1487 was aimed at to the design, conduct and analysis of experiments directed at the identification and control of gravitational effects on crystal growth, segregation and defect formation in the Sillenite system: bismuth silicate (Bi(12)SiO(20)). Correlation analyses was conducted in order to establish the influence of gravity related defects introduced during crystal growth on critical, application specific properties. Achievement of the states objective was conducted during the period from Feb. 01, 1998 to Dec. 31, 2003 with the following anticipated milestones: 1. Establishment of capabilities for (a) reproducible Czochralski and Bridgman-type growth of BSO single crystals and (b) for comprehensive analysis of crystalline and chemical defects as well as for selective property characterization of grown crystals (year 1). 2. Design and execution of critical space growth experiment(s) based on analyses of prefatory space results (experiments aimed at establishing the viability of planned approaches and procedures) and on unresolved issues related to growth, segregation and defect formation associated with conventional growth in Bridgman geometries. Comparative analysis of growth under conventional and under mu-g conditions; identification of gravity related defect formation during conventional Bridgman growth and formulation of approaches for their control (years 2 and 3). Development of charge confinement system which permits growth interface demarcation (in a mu-g environment) as well as minimization of confinement related stress and contamination during growth; design of complementary mu-g growth experiments aimed at quantitative mu-g growth and segregation analyses (year 4). 3. Conduct of quantitative mu-g growth experiments directed at: (a) identification and control of gravity related crystalline and chemical defect formation during single crystal growth of Bi(12)SiO(20) and at (b) defect engineering -the development of approaches to the controlled generation during crystal growth of specified point defects in homogeneous distribution (year 5). The proposed research places focus on a class of materials which have outstanding electrical and optical properties but have so far failed to reach their potential, primarily because of our inability to control adequately their stoichiometry and crystal defect formation as well as confinement related contamination and lattice stress.

Becia, Piotr↗
NASA NTRS1993

Growth of semiconductor compound single crystal InSb by floating zone method (M-3)

Floating zone methods have potential applications in growing single high-quality semi-conductor crystals. In this method, melts can be sustained without containers and, therefore, are free from contamination from the containers. The main objective of this project is to use the Image Furnace to study a large diameter, (20 mm) single crystal of InSb under microgravity conditions. The behavior of the liquid column is recorded on the VTR tapes and is compared with what is expected theoretically. The single crystal grown in space is characterized by comparing it with single crystals grown on the ground with respect to crystallographic and electronic properties. The goal of this project is to confirm the effects of the microgravity on the single crystals.

Nakatani, I.↗
NASA NTRS1973

Study of single crystals of metal solid solutions

The parameters and requirements for growing single crystals of relatively high melting point metals in a zero gravity environment are studied. The crystal growth of metals such as silver, copper, gold, and alloys with a melting point between 900-1100 C is examined.

Doty, J. P.↗
NASA NTRS1977

Friction and deformation behavior of single-crystal silicon carbide

Friction and deformation studies were conducted with single-crystal silicon carbide in sliding contact with diamond. When the radius of curvature of the spherical diamond rider was large (0.3), deformation of silicon carbide was primarily elastic. Under these conditions the friction coefficient was low and did not show a dependence on the silicon carbide orientation. Further, there was no detectable cracking of the silicon carbide surfaces. When smaller radii of curvature of the spherical diamond riders (0.15 and 0.02 mm) or a conical diamond rider was used, plastic grooving occured and the silicon carbide exhibited anisotropic friction and deformation behavior. Under these conditions the friction coefficient depended on load. Anisotropic friction and deformation of the basal plane of silicon carbide was controlled by the slip system. 10101120and cleavage of1010.

Miyoshi, K.↗
NASA NTRS1979

Friction and wear of single-crystal manganese-zinc ferrite

Sliding friction experiments were conducted with single crystal manganese-zinc ferrite in contact with itself and with transition metals. Results indicate mating highest atomic density directions (110) on matched crystallographic planes exhibit the lowest coefficient of friction, indicating that direction is important in the friction behavior of ferrite. Matched parallel high atomic density planes and crystallographic directions at the interface exhibit low coefficients of friction. The coefficients of friction for ferrite in contact with various metals are related to the relative chemical activity of these metals. The more active the metal, the higher the coefficient of friction. Cracking and the formation of hexagon- and rectangular-shaped platelet wear debris due to cleavages of (110) planes are observed on the ferrite surfaces as a result of sliding.

Miyoshi, K.↗
NASA NTRS1982

XPS, AES and friction studies of single-crystal silicon carbide

The surface chemistry and friction behavior of a single crystal silicon carbide surface parallel to the 0001 plane in sliding contact with iron at various temperatures to 1500 C in a vacuum of 3 x 10 nPa are investigated using X-ray photoelectron and Auger electron spectroscopy. Results show that graphite and carbide-type carbon are seen primarily on the silicon carbide surface in addition to silicon at temperatures to 800 C by both types of spectroscopy. The coefficients of friction for iron sliding against a silicon carbide surface parallel to the 0001 plane surface are found to be high at temperatures up to 800 C, with the silicon and carbide-type carbon at maximum intensity in the X-ray photoelectron spectroscopy at 800 C. The concentration of the graphite increases rapidly on the surface as the temperature is increased above 800 C, while the concentrations of the carbide-type carbon and silicon decrease rapidly and this presence of graphite is accompanied by a significant decrease in friction. Preheating the surfaces to 1500 C also gives dramatically lower coefficients of friction when reheating in the sliding temperature range of from room temperature to 1200 C, with this reduction in friction due to the graphite layer on the silicon carbide surface.

Miyoshi, K.↗
NASA NTRS1988

Accelerated crack growth rate at low Delta K in a single crystal superalloy

The low Delta K crack growth behavior of a single crystal of the PWA 1480 nickel-based superalloy was investigated. The crystal was tested in the near (100) orientation with the side faces being in the near (001) orientation. Although in the higher Delta K region the fatigue crack growth (FCG) behavior is rather normal, at Delta K of about 8 MPa sq rt m, a transition occurs where the FCG rate appears to be independent of Delta K. This region is found to continue until Delta K of about 2.5 MPa sq rt m, where the FCG rate again decreases with decreasing Delta K.

Telesman, Jack↗
NASA NTRS1991

Microstructure and mechanical properties of a single crystal NiAl alloy with Zr or Hf rich G-phase precipitates

The possibility of producing NiAl reinforced with the G-phase (Ni16X6Si7), where X is Zr or Hf, has been investigated. The microstructure of these NiAl alloys have been characterized in the as-cast and annealed conditions. The G-phases are present as fine cuboidal precipitates (10 to 40 nm) and have lattice parameters almost four times that of NiAl. They are coherent with the matrix and fairly resistant to coarsening during annealing heat treatments. Segregation and nonuniform precipitate distribution observed in as-cast materials were eliminated by homogenization at temperatures near 1600 K. Slow cooling from these temperatures resulted in large plate shaped precipitates, denuded zones, and a loss of coherency in some of the large particles. Faster cooling produced a homogeneous fine distribution of cuboidal G-phase particles in the matrix. Preliminary mechanical properties for the Zr-doped alloy are presented and compared to binary single crystal NiAl. The presence of these precipitates appears to have an important strengthening effect at temperatures not less than 1000 K compared to binary NiAl single crystals.

Locci, I. E.↗
NASA NTRS1996

The Influence of C and Si on the Flow Behavior of NiAl Single Crystals

Alloys based on the intermetallic compound NiAl are considered potential replacements for Ni and Co-based superalloys in high temperature structural applications due to their excellent oxidation resistance, low densities, high thermal conductivities, and increased melting points. Unfortunately, NiAl exhibits low tensile ductility at room temperature and low strengths at elevated temperatures which have combined to hinder its development. Recent efforts, have revealed that NiAl in the presence of sufficient solute levels, is subject to the phenomenon of strain aging which manifests itself as: sharp yield points, abnormally low strain rate sensitivities (SRS), plateaus or peaks in yield stress and work hardening rate as a function of temperature, flow stress transients upon an upward change in strain rate, reduced tensile elongations at elevated temperatures, and serrated stress-strain curves. Though recent efforts via either alloying or the removal of interstitial impurities, have resulted in consistent room-temperature tensile elongations exceeding 5% and the elimination of serrated flow, the effects of particular substitutional and interstitial elements and the mechanisms by which they might enhance or hinder the mechanical properties remain unknown. Consequently, the purpose of the present paper is to provide a preliminary assessment of the influence of common substitutional and interstitial impurities on the deformation behavior of NiAl. To accomplish this goal a series of NiAl single crystal alloys containing various interstitial solutes were prepared and their mechanical properties were evaluated between 77 and 1100 K. Because Si is a common impurity in conventional purity single crystals grown by the Bridgman method, Si concentrations were also varied in order to determine the influence of this element.

Weaver, M. L.↗