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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

The wetting characteristics and surface tension of some Ni-based alloys on yttria, hafnia, alumina, and zirconia substrates

The surface tension and wetting characteristics of four commercial Ni-based alloys (UD718, Waspaloy, UD720, and UD520), pure Ni, and three special alloys (Ni-20 percent Cr, Ni-20 percent Cr-1 percent Al, and Ni-20 percent Cr-4 percent Al) on various ceramic substrates (including alumina, zirconia, hafnia, and yttria) were investigated using sessile drop experiments. Most of the systems studied exhibited a nonwetting behavior. Wetting improved with holding time at a given temperature to the point that some systems, such as Ni-20Cr on alumina, Ni-20Cr-4Al on alumina and on yttria, became marginally wetting. Wetting characteristics were apparently related to constitutional undercooling, which in turn could be affected by the metal dissolving some of the substrate during measurements.

Kanetkar, C. S.↗
NASA NTRS1988

Extreme ultraviolet reflectivity studies of gold on glass and metal substrates

The paper reports measurements of the extreme ultraviolet reflectivity of gold from 44 to 920 A at grazing incidence. Gold was deposited using vacuum evaporation and electroplating on substrates of glass and polished nickel, respectively. Measurements are also presented of the extreme ultraviolet reflectivity of electroless nickel in the same wavelength region, where one of the polished nickel substrates was used as a sample. Derived optical constants for evaporated and electroplated gold and electroless nickel are presented. Additional studies of the effects of various contaminants on the EUV reflectivity are also reported. The variations of the optical constants are discussed in terms of density variations, surface roughness and contamination effects. These results ae reported as part of studies for the Extreme Ultraviolet Explorer satellite program to determine acceptance criteria for the EUV optics, contamination budgets and calibration plans.

Jelinsky, Sharon R.↗
NASA NTRS1988

Al(0.3)Ga(0.7)As / Al(0.05)Ga(0.95)As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy

Al(0.3)Ga(0.7)As/Al(0.05)Ga(0.95)As double-heterostructure light-emitting diodes (LEDs) were successfully grown for the first time by liquid phase epitaxy on a GaAs-coated Si substrate that was prepared by a sequential process of migration-enhanced epitaxy and molecular beam epitaxy. The edge-emitting LEDs had diode ideality factors of 1.54 at a forward-biased voltage higher than 0.9 V and external quantum efficiencies of 0.0033 W/A per facet. This efficiency is 50 times higher than the previously reported value, and is on the same order as that of AlGaAs homojunction LEDs fabricated on the GaAs substrates by liquid phase epitaxy.

Sakai, Shiro↗
NASA NTRS1988

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Connolly, J. C.↗
NASA NTRS1989

High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

Connolly, J. C.↗
NASA NTRS1989

Measurements of complex permittivity of microwave substrates in the 20 to 300 K temperature range from 26.5 to 40.0 GHz

A knowledge of the dielectric properties of microwave substrates at low temperatures is useful in the design of superconducting microwave circuits. Results are reported for a study of the complex permittivity of sapphire (Al2O3), magnesium oxide (MgO), silicon oxide (SiO2), lanthanum aluminate (LaAlO3), and zirconium oxide (ZrO2), in the 20 to 300 Kelvin temperature range, at frequencies from 26.5 to 40.0 GHz. The values of the real and imaginary parts of the complex permittivity were obtained from the scattering parameters, which were measured using a HP-8510 automatic network analyzer. For these measurements, the samples were mounted on the cold head of a helium gas closed cycle refrigerator, in a specially designed vacuum chamber. An arrangement of wave guides, with mica windows, was used to connect the cooling system to the network analyzer. A decrease in the value of the real part of the complex permittivity of these substrates, with decreasing temperature, was observed. For MgO and Al2O3, the decrease from room temperature to 20 K was of 7 and 15 percent, respectively. For LaAlO3, it decreased by 14 percent, for ZrO2 by 15 percent, and for SiO2 by 2 percent, in the above mentioned temperature range.

Miranda, Felix A.↗
NASA NTRS1989

Alkoxysilane adsorption on metal oxide substrates

Reflection-absorption infrared and inelastic electron tunneling spectroscopies have been used to study adsorption of liquid phase mono-, di-, and trialkoxysilanes on evaporated Al and Cu substrates. Spectral evidence shows that substrate properties influence the chemical and physical nature of trialkoxysilane films and that silane functionality plays a role in molecular orientation. Results show that dialkoxysilane films contain structural gradients, with adsorption at the monomolecular level influenced by surface morphology, and with organofunctionality and dosing procedure affecting the formation of thicker films. Evidence is presented that monoalkoxysilanes react with alumina surfaces, and a broad, multipeaked band from 1600 to 1900/cm has been interpreted as characteristic of the silylated AlO(x)Pb interface.

Ramsier, R. D.↗
NASA NTRS1989

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Warner, J. D.↗
NASA NTRS1988

Growth and characterization of CdTe on GaAs/Si substrates

Epitaxial CdTe has been grown on both (100) GaAs/Si and (111) GaAs/Si substrates. A combination of molecular beam epitaxy and metal organic chemical vapor deposition have been employed to achieve this growth. The GaAs layers are grown in Si substrates by molecular beam epitaxy, followed by the growth of CdTe on GaAs/Si substra by metalorganic chemical vapor deposition. X-ray diffraction, photoluminescence, and scanning electron microscopy have been used to characterize the CdTe films.

Radhakrishnan, G.↗
NASA NTRS1991

Lightweight Substrates For Mirrors

New substrate uses conventional quasi-isotropic fabric laminate with surfacing layer of carbon-fiber paper consisting of randomly oriented chopped carbon fibers. Layered structure of fabric and paper relatively easy to manufacture. When impregnated with carbon, structure rigid and stable. Substrates of this type made quite thin, thus keeping areal weights to minimum. Mirrors of this type made faster, and cost less, than predecessors.

Brown, D. Kyle↗
NASA NTRS1991

Optical waveguide formed by cubic silicon carbide on sapphire substrates

Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

Tang, Xiao↗
NASA NTRS1991

Measured and computed performance of a microstrip filter composed of semi-insulating GaAs on a fused quartz substrate

The performance of a microstrip hammerhead filter that has been fabricated on an electrically thin layer of semiinsulating GaAs backed by a fused quartz substrate was measured and compared to results of a three-dimensional finite-difference time-domain (FD-TD) program used to calculate the response of the filter both with and without the GaAs layer. The program, presented by Sheen et al. (1990), discretizes the entire structure and then simulates the propagation of a Gaussian pulse through the filter. The microstrip filter is intended for applications involving ultrathin lifted-off or etched-back GaAs containing both active devices and passive microstrip circuitry backed by a much thicker mechanically rigid low-loss, low-dielectric-constant substrate. The low-pass characteristics of the hammerhead filter with the intermediate GaAs layer are compared with those of the same filter on quartz alone. Both the measured and computed data show a significant shift in cutoff frequency (about 10 percent at the 3 dB points) for a GaAs layer that is 0.007 wavelengths thick at 4 GHz.

Siegel, Peter H.↗
NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗
NASA NTRS1990

Measurements of complex permittivity of microwave substrates in the 20 to 300 K temperature range from 26.5 to 40.0 GHz

A knowledge of the dielectric properties of microwve substrates at low temperatures is useful in the design of superconducting microwave circuits. Results are reported for a study of the complex permittivity of sapphire (Al2O3), magnesium oxide (MgO), silicon oxide (SiO2), lanthanum aluminate (LaAlO3), and zirconium oxide (ZrO2), in the 20 to 300 Kelvin temperature range, at frequencies from 26.5 to 40.0 GHz. The values of the real and imaginary parts of the complex permittivity were obtained from the scattering parameters, which were measured using an HP-8510 automatic network analyzer. For these measurements, the samples were mounted on the cold head of a helium gas closed cycle refrigerator, in a specially designated vacuum chamber. An arrangement of wave guides, with mica windows, was used to connect the cooling system to the network analyzer. A decrease in the value of the real part of the complex permittivity of these substrates, with decreasing temperature, was observed. For MgO and Al2O3, the decrease from room temperature to 20 K was of 7 and 15 percent, respectively. For LaAlO3, it decreased by 14 percent, for ZrO2 by 15 percent, and for SiO2 by 2 percent, in the above mentioned temperature range.

Miranda, Felix A.↗
NASA NTRS1993

Full wave characterization of microstrip open end discontinuities patterned on anisotropic substrates using potential theory

A technique for a full wave characterization of microstrip open end discontinuities fabricated on uniaxial anisotropic substrates using potential theory is presented. The substrate to be analyzed is enclosed in a cutoff waveguide, with the anisotropic axis aligned perpendicular to the air-dielectric interface. A full description of the sources on the microstrip line is included with edge conditions built in. Extention to other discontinuities is discussed.

Toncich, S. S.↗
NASA NTRS1993

Applications of fibrous substrates containing insolubilized phase change polymers

Incorporation of polyethylene glycols into fibrous substrates produces several improved functional properties when they are insolubilized by crosslinking with a methylolamide resin or by polyacetal formation by their reaction with glyoxal. The range of molecular weights of polyols that may be insolubilized is broad as are the curing conditions (0.25-10 min at 80-200C). Most representative fiber types and blends (natural and synthetic) and all types of fabric constructions (woven, nonwoven and knit) have been modified by incorporation of the bound polyols. The most novel property is the thermal adaptability of the modified substrates to many climatic conditions. This adaptability is due to the high latent heat of the crosslinked polyols that function as phase change materials, the hydrophilic nature of the crosslinked polymer and its enhanced thermal conductivity. Other enhanced properties imparted to fabrics include flex and flat abrasion, antimicrobial activity, reduced static charge, resistance to oily soils, resiliency, wind resistance and reduced lint loss. Applications commercialized in the U.S. and Japan include sportswear and skiwear. Several examples of electric sets of properties useful for specific end uses are given. In addition, other uses are biomedical horticultural, aerospace, indoor insulation, automotive interiors and components and packaging material.

Vigo, Tyrone L.↗
NASA NTRS1993

Input impedance of coaxially fed rectangular microstrip antenna on electrically thick substrate

A full-wave spectral domain analysis has been used to obtain input-impedance results for a probe-fed rectangular-patch antenna, modeling the source as a magnetic-current frill. Multiple modes are used in the probe surface current to account for axial and azimuthal variations. It is established that maximum resistance is dependent on the substrate loss tangent. The axial variation of the probe current must be taken into account for substrate thicknesses greater than about 0.02 wavelengths.

Chen, Wei↗
NASA NTRS1993

Tribological characteristics of sputtered Au/Cr films on alumina substrates at elevated temperatures

Research to evaluate the tribological properties of alumina pins sliding against thin sputtered gold films deposited on alumina disk substrates is described. A 250 A thick chromium interlayer was first deposited onto the alumina test disks to enhance adhesion and high temperature wetting of the gold films. The Au/Cr films were tribotested in pure sliding in a pin-on-disk tribometer under a 4.9 N load at 1m/s. The test atmosphere was room air at temperatures of 25, 500, and 800 C and the test duration varied from 60 to 540 min. The use of the Au/Cr films reduced friction by about a factor of two compared to the unlubricated alumina sliding couple. The coatings prevented wear of the alumina substrate disks and reduced pin wear by one to two orders of magnitude. In addition, wear lives in excess of 200,000 sliding passes (9 hr) were observed during sliding at 800 C. The results suggest that these films show promise for the practical lubrication of many high temperature sliding components.

Benoy, P. A.↗