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Proposed integrated in-line array of semiconductor lasers intended to provide high reliability and/or long operating lifetime. Multiple integrated collinear semiconductor lasers share common optical waveguide but individually electrically excited. When one device fails, another switched on. Important advantage in systems in which both reliability of diode lasers and alignment of those lasers with other optical components critical.
The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.
According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator
As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.
Switches having an in situ grown carbon nanotube as an element thereof, and methods of fabricating such switches. A carbon nanotube is grown in situ in mechanical connection with a conductive substrate, such as a heavily doped silicon wafer or an SOI wafer. The carbon nanotube is electrically connected at one location to a terminal. At another location of the carbon nanotube there is situated a pull electrode that can be used to elecrostatically displace the carbon nanotube so that it selectively makes contact with either the pull electrode or with a contact electrode. Connection to the pull electrode is sufficient to operate the device as a simple switch, while connection to a contact electrode is useful to operate the device in a manner analogous to a relay. In various embodiments, the devices disclosed are useful as at least switches for various signals, multi-state memory, computational devices, and multiplexers.
Electricity accounts for nearly 40% of the energy generated in the United States, of which 65% is lost to electrical system inefficiency before reaching end-use sectors. Power electronics will play a growing role in this distribution and end-use, with up to 80% of electricity estimated to pass through power electronics from generation to consumption by 2030. This gives technical improvements in power electronics enormous potential to drive efficiency gains throughout the U.S. economy. Current Si-based power architectures including MOSFETs and IGBTs are limited by high losses, low switching frequency, and poor high-temperature performance. Given the material properties of GaN, devices can exhibit a given turn-on resistance and breakdown voltage with a minute fraction of the area of a Si device—all with higher switching speeds. While n-type doping of III-nitrides has reached a high level of maturity and integration into commercialized products, p-type doping presents distinct challenges that requires continued research. The success of the next generation of GaN-based power devices depends in large part on the ability to form selective-area p-type regions, which can be accomplished by ion implantation of the prevailing acceptor dopant, Mg. This approach is relatively inexpensive and is a fab-ready processing step for creation of current-generation power electronic devices including BJTs, IGBTs, and diode rectifiers. However, ion implantation induces lattice damage and creates point defects within the material, which negatively impacts dopant activation annealing. These forms of damage may be removed by high-temperature annealing, however short annealing time and higher pressures are required to prevent decomposition of the material. We approach this challenge through an innovative combination of approaches toward obtaining high-conductivity p-type GaN. By the novel employment of a gyrotron, a microwave source that can be shaped into a highly localized beam to dissipate very high power in a semiconductor target, a wafer of GaN can be annealed in short (<2 s) ‘pulses’ at temperatures of 1450 °C (2640 °F) to achieve p-type activation without appreciable surface degradation. The p-type activation of Mg-implanted GaN can be further aided by co-implantation with N, believed to enhance the removal of point defects that compensate the acceptors dopant. Elevation to such high temperatures for even a short time induces degradation of GaN-to overcome, we have implemented additional measures to retain high-quality crystalline GaN while removing implant damage and activating Mg dopant. A bilayer cap of AlN is deposited by a combination of chemical and physical vapor deposition to protect the GaN surface. To prevent decomposition of GaN loss of N during annealing, a custom vessel—to contain pressurized N while allowing injection of microwave energy—is employed. By detailed study of the interaction of various measures that are implemented to protect the sample surface (GaN), activate the implanted dopants, and mitigate damage of the lattice heating damage during annealing, we are able to achieve p-type GaN and observe recovery of the crystal and removal of substantial density of defects created during the implantation process.
Magnetic stripe domain and liquid crystal devices are being developed and evaluated as fiber optic switches that can be utilized for nonblocking type nxm optical matrix switches in networking and optical processing. Liquid crystal switches are characterized by very low insertion loss and crosstalk, while stripe domain switches commutate in less than one microsecond. Both switches operate on multimode, randomly polarized fiber light with potentially large values for (n,m). The applications of these magnetic stripe domain and liquid crystal devices are discussed.
Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.
Hybrid integrated circuits (ICs) containing both Si-based semiconducting and YBa(2)Cu(3)O(7-x) superconducting circuit elements on sapphire substrates developed. Help to prevent diffusion of Cu from superconductors into semiconductors. These hybrid ICs combine superconducting and semiconducting features unavailable in superconducting or semiconducting circuitry alone. For example, complementary metal oxide/semiconductor (CMOS) readout and memory devices integrated with fast-switching Josephson-junction super-conducting logic devices and zero-resistance interconnections.
The Lightwave Energy-Efficient Datacenter (LEED) program is a disruptive “green-field” approach that provides a quantum leap in the energy efficiency of datacenters. LEED’s fundamental value proposition is that a novel and re-architected optical network—RotorNet— can deliver “more bandwidth per buck” as well as unique system-level attributes that significantly improve overall datacenter energy efficiency and performance. LEED has developed three system-level testbeds. The first testbed uses calibrated hardware and software power measurements to determine server energy efficiency as a function of network bandwidth and workload. These measurements have shown that increasing network communications bandwidth dramatically increases server energy efficiency providing a realistic path to the overall ENLITENED program goal of doubling the number of transactions per joule. The second testbed demonstrates key hardware: a prototype low-loss, high-port count optical “selector switch”. This switch was fabricated, racked, and tested. Measured switch characteristics include loss, bandwidth, crosstalk, switch time, system-level switch time (including the transceivers), and bit error rate. The third testbed demonstrates a fully working and manufactured pinwheel design which dramatically lowers the cost of design, while delivering high switch radix and low reconfiguration times. The LEED project has tied these three novel photonic switch prototypes together with production servers and software through the development of a novel FPGA-based NIC platform called Corundum. Corundum ensures that the packet-switched protocols supported by commodity operating systems and devices can interface with the Rotor switch design. The LEED group has used this combined hardware and software prototype to characterize applications running at a commercially relevant scale. The project has used a combination of enhanced optical modulation amplitude (OMA) modulators, broadband multiplexers and demultiplexers, avalanche photodiodes, and a novel burst-mode receivers to enable the insertion of LEED-developed optical switches without the need for expensive optical amplification. Our modeling has shown that measured LEED-developed device characteristics can achieve link characteristics of 2 pJ/bit including both transceivers and the Rotor switch. In summary, the LEED program has demonstrated a credible and practical path, through novel hardware and software, to realize the program objectives of ENLITENED. The net result will ensure that the United States maintains its strength in the crucial sector of Information Technology, which is vital to both our economic security and our national security.
Vanadium dioxide (VO 2 ), which exhibits a near-room-temperature insulator–metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO 2 at local areas in planar VO 2 /TiO 2 device configuration under external biasing. After each resistive switching, different VO 2 monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Furthermore, our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO 2 as the key material of neuromorphic computing.
Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have emerged as promising non-volatile memory elements for microelectronics, compatible with back end of line (BEOL) complementary–metal–oxide semiconductor fabrication. This study investigates asymmetric electrode TaN/HZO/Ta devices with a 6 nm thick HZO layer as FTJs for multistate resistive memory applications. The individual FTJs exhibit a resistance ratio exceeding 10× when utilized as a binary state device, with pulsing between −1.7 and +1.4 V to set the high resistance state (HRS) and low resistance state (LRS), respectively. Following with reduced write voltage pulses allows the ferroelectric device to operate with a selection of over 32 distinct resistance states (2 5 bits) between the LRS and HRS. This work then explores the stability of the resistance states during write/read pulse cycling, along with the stability of the state after multiple read pulses. Accessing the multibit state shows stability within 50 reads with the binary state remaining stable for more than 4000 reads pulses. With their multistate tunability and versatility, FTJs hold promise as BEOL memory elements for compute-in-memory (CiM) arrays, binary digital memory, or weighted vector matrix multiplication applications with low power consumption during computations.
This article presents an improved double pulse test (DPT) for accurate dynamic characterization of the medium voltage (MV) silicon carbide device. The difference between low voltage (LV) and MV DPT setup grounding is first introduced, which results in different measurement considerations. Then, parasitic capacitances in the DPT and their impact on the DPT are discussed considering different grounding points and device connections. Approaches are proposed to minimize the impact of parasitic capacitances on DPT results. In addition, the impact of switching V-I timing alignment on the testing results is discussed, compared to that in the LV DPT; a V-I alignment approach is introduced for the MV DPT. A 10 kV/20 A SiC mosfet -based DPT is taken as an example of the improved DPT, and test results show that it can minimize the impact from parasitic and improve the accuracy of the device switching loss estimation.
Special device modeling, design and layout, and precision processing controls were employed to fabricate new balanced-bridge 2x2 and 4x4 switches on X-cut, Y-propagation LiNbO3 substrate using Ti indiffused optical waveguides. The best of these devices achieved extinction ratio and crosstalk isolation of better than 93 dB electrically (46.5 dB optically). The new switches demonstrate good reproducibility with electrical crosstalk less than -80 dB.
A dual refrigeration system for cooling a sink device is described, which automatically thermally couples the cold refrigerator to the sink device while thermally isolating the warm refrigerator from the sink device. The system includes two gas gap heat switches that each thermally couples one of the refrigerators to the sink device, and a pair of sorption pumps that are coupled through tubes to the heat switches. When the first refrigerator is operated and therefore cold, the first pump which is thermally coupled to it is also cooled and adsorbs gas to withdraw it from the second heat switch, to thereby thermally isolate the sink device from the warm second refrigerator. With the second refrigerator being warm, the second pump is also warm and desorbs gas, so the gas lies in the first switch, to close that switch and therefore thermally couple the cold first refrigerator to the sink device. Thus, the heat switches are automatically switched according to the temperature of the corresponding refrigerator.
Photon actuated solid state electronic switch for multiplexing low level analog signals
Some improvements have been made in the formulation of holographically formed polymer-dispersed liquid crystals (H-PDLCs) and in the fabrication of devices made from these materials, with resulting improvements in performance. H-PDLCs are essentially volume Bragg gratings. Devices made from H-PDLCs function as electrically switchable reflective filters. Heretofore, it has been necessary to apply undesirably high drive voltages in order to switch H-PDLC devices. Many scientific papers on H-PDLCs and on the potential utility of H-PDLC devices for display and telecommunication applications have been published. However, until now, little has been published about improving quality control in synthesis of H-PDLCs and fabrication of H-PDLC devices to minimize (1) spatial nonuniformities within individual devices, (2) nonuniformities among nominally identical devices, and (3) variations in performance among nominally identical devices. The improvements reported here are results of a research effort directed partly toward solving these quality-control problems and partly toward reducing switching voltages. The quality-control improvements include incorporation of a number of process controls to create a relatively robust process, such that the H-PDLC devices fabricated in this process are more nearly uniform than were those fabricated in a prior laboratory-type process. The improved process includes ultrasonic mixing, ultrasonic cleaning, the use of a micro dispensing technique, and the use of a bubble press.