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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Prediction and compression of lattice QCD data using machine learning algorithms on quantum annealer

We present regression and compression algorithms for lattice QCD data utilizing the efficient binary optimization ability of quantum annealers. In the regression algorithm, we encode the correlation between the input and output variables into a sparse coding machine learning algorithm. The trained correlation pattern is used to predict lattice QCD observables of unseen lattice configurations from other observables measured on the lattice. In the compression algorithm, we define a mapping from lattice QCD data of floating-point numbers to the binary coefficients that closely reconstruct the input data from a set of basis vectors. Since the reconstruction is not exact, the mapping defines a lossy compression, but, a reasonably small number of binary coefficients are able to reconstruct the input vector of lattice QCD data with the reconstruction error much smaller than the statistical fluctuation. In both applications, we use D-Wave quantum annealers to solve the NP-hard binary optimization problems of the machine learning algorithms.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

The In Situ Observation of Phase Transformations During Intercritical Annealing of a Medium Manganese Advanced High Strength Steel by High Energy X-Ray Diffraction

Microstructural changes during thermal processing of a medium manganese steel containing (in wt%) 0.19C and 4.39 Mn were evaluated in situ with a high energy X-ray diffraction system (HEXRD). Samples with an initial fully martensitic microstructure were heated to intercritical annealing (IA) temperatures of 600 or 650°C, held for 30 min, and cooled to room temperature. Diffraction data were analyzed to determine the variations in austenite and ferrite phase fractions and phase lattice constants throughout the ICA cycles. On heating, the 2 vol. pct of austenite present in the starting microstructure decomposed, and cementite precipitation then occurred. During isothermal holding, the austenite fraction increased, up to 20% for the sample annealed at 650°C. The measured austenite fractions were less than those calculated by Thermo-Calc for equilibrium conditions, indicating that the 30-min hold time was insufficient to achieve near-equilibrium conditions. Observed changes in lattice parameters during isothermal holding were interpreted to reflect composition changes due to redistribution of the C and Mn between austenite and ferrite. The results are discussed in relation to the potential for controlling austenite stability during ambient temperature deformation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Low-Temperature Annealing of Nanoscale Defects in Polycrystalline Graphite

Polycrystalline graphite contains multi-scale defects, which are difficult to anneal thermally because of the extremely high temperatures involved in the manufacturing process. In this study, we demonstrate annealing of nuclear graphite NBG-18 at temperatures below 28 °C, exploiting the electron wind force, a non-thermal stimulus. High current density pulses were passed through the specimens with a very low-duty cycle so that the electron momentum could mobilize the defects without heating the specimen. The effectiveness of this technique is presented with a significant decrease in electrical resistivity, defect counts from X-ray computed tomography, Raman spectroscopy, and nanoindentation-based mechanical characterization. Such multi-modal evidence highlights the feasibility of nanoscale defect control at temperatures about two orders of magnitude below the graphitization temperature.

Liu, Gongyuan↗
DOE OSTI2020

Dynamic Topology Reconfiguration of Boltzmann Machines on Quantum Annealers

Boltzmann machines have useful roles in deep learning applications, such as generative data modeling, initializing weights for other types of networks, or extracting efficient representations from high-dimensional data. Most Boltzmann machines use restricted topologies that exclude looping connectivity, as such connectivity creates complex distributions that are difficult to sample. We have used an open-system quantum annealer to sample from complex distributions and implement Boltzmann machines with looping connectivity. Further, we have created policies mapping Boltzmann machine variables to the quantum bits of an annealer. These policies, based on correlation and entropy metrics, dynamically reconfigure the topology of Boltzmann machines during training and improve performance.

Liu, Jeremy (ORCID:0000000172299417)↗
DOE OSTI2022

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Here we report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm 2 . The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV cm –1 . These results underline that high-performance GaN JBS can be realized using Mg implantation and high-temperature UHP post-activation anneal.

42 ENGINEERING↗
NASA NTRS1972

Study of a columnar grain structure produced in a superalloy by gradient-annealing prealloyed powder extrusions

Annealing in a temperature gradient was used to produce a structure of continuous columnar grains in alloy 713 C made by extrusion of prealloyed powder. The columnar-grained specimens had tensile strengths within plus or minus 5 percent of those of the as-cast alloy at 760 C and 980 C but were significantly stronger at room temperature. Stress-rupture tests at 760 C and 980 C showed lives scattered from 17 to 376 percent of those of as-cast 713 C tested under the same conditions. X-ray diffraction studies showed the large grains formed upon annealing to have a well-defined texture, although the as-extruded material had none.

Miner, R. V., Jr.↗
NASA NTRS1972

Observation of defect annealing in neutron-irradiated silicon by space-charge-limited current.

Use of space-charge-limited current (SCLC) to observe defect annealing in neutron-irradiated silicon. From the observation of the trap-filled-limit voltage a deep-trap concentration in the irradiated unannealed crystals is found to be at least 1.4 x 10 to the 12th power per cu cm. Shallow traps are also observed. This deep-trap concentration decreases with anneal temperature up to 200 C, above which SCLC can no longer be observed. There is evidence that at least some of this decrease is due to the conversion of the deep traps to shallow traps.

Magee, T. J.↗
NASA NTRS1974

Effect of outdoor exposure at ambient and elevated temperatures on fatigue life of Ti-6Al-4V titanium alloy sheet in the annealed and the solution treated and aged condition

Specimens of Ti-6Al-4V titanium alloy sheet in the annealed and the solution-treated and aged heat-treatment condition were exposed outdoors at ambient and 560 K (550 F) temperatures to determine the effect of outdoor exposure on fatigue life. Effects of exposure were determined by comparing fatigue lives of exposed specimens to those of unexpected specimens. Two procedures for fatigue testing the exposed specimens were evaluated: (1) fatigue tests conducted outdoors by applying 1200 load cycles per week until failure occurred and (2) conventional fatigue tests (continuous cycling until failure occurred) conducted indoors after outdoor exposure under static load. The exposure period ranged from 9 to 28 months for the outdoor fatigue-test group and was 24 months for the static-load group. All fatigue tests were constant-amplitude bending of specimens containing a drilled hole (stress concentration factor of 1.6). The results of the tests indicate that the fatigue lives of solution-treated and aged specimens were significantly reduced by the outdoor exposure at 560 K but not by the exposure at ambient temperature. Fatigue lives of the annealed specimens were essentially unaffected by the outdoor exposure at either temperature. The two test procedures - outdoor fatigue test and indoor fatigue test after outdoor exposure - led to the same conclusions about exposure effects.

Phillips, E. P.↗
NASA NTRS1975

Annealing of aromatic polyimide precursors

A study has been made of the thermal behavior of polyimide precursors: an isomeric pair of crystals of the complex formed by p-phenylenediamine with the separated isomers of the di-isopropyl ester of pyromellitic acid. Specimens of this material were isothermally annealed in the temperature range 120 C to 170 C for periods of time up to 1 week. Although this temperature range is well below that customarily used for imidizations, the working hypothesis was that it would be more likely that a polymer embodying at least part of the precursor structure could be formed if the molecular motion was minimized to that actually required for the formation of the imide linkage. The progress of the annealing was followed by: infrared spectroscopy, differential thermal analysis, powder X-ray diffraction, and thermal gravimetric analysis. Single crystal X-ray analysis of the meta monomer yields a structure of chains of alternating acid and base and suggests that this monomer is amenable to polymerization with a minimum of geometrical disruption.

Wakelyn, N. T.↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

Stanley, A. G.↗
NASA NTRS1976

The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

Pisciotta, B. P.↗
NASA NTRS1976

Dissolution kinetics of small amounts of oxygen in tantalum alloy T-111 and internal oxide displacement reactions during annealing

Oxygen was added to T-111 (Ta-8W-2Hf, wt. %) at 820 and 990 C at an oxygen pressure of about 0.0003 torr. The technique employed permitted predetermined and reproducible doping of T-111 up to 3.0 at. % oxygen. Based on the temperature dependence of the doping reaction, it is concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the latter oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and of other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high-temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C. The vaporization of WO3 has no apparent affect on the doping reaction.

Stecura, S.↗
NASA NTRS1979

Effect of dopants on annealing performance of silicon solar cells

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Scott-Monck, J. A.↗
NASA NTRS1979

Pulsed-electron-beam annealing of ion-implantation damage

Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using He(+)-4 backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.

Greenwald, A. C.↗
NASA NTRS1980

Origin of reverse annealing in radiation-damaged silicon solar cells

The paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.

Weinberg, I.↗
NASA NTRS1980

A comparison between pulsed and CW laser annealing for solar cell applications

The application of laser processing in solar cell fabrication is considered. Specific emphasis is placed on a process developed for the fabrication of a 16.6% silicon solar cell using pulsed laser processing. Results are presented which compare pulsed laser annealing with CW laser annealing in solar cell fabrication.

Jellison, G. E., Jr.↗