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At least 343 records · Page 19

Activation analysis of admixtures in certain semiconductive materials

The use of extractions and chromatographic operations to separate macrobases, and to divide elements into groups convenient for gamma-spectrometric analysis is discussed. Methods are described for the activation detection of some impurities in silicon, arsenic, thallium, and trichloromethylsilane, on the basis of the extraction properties of bis(2-chlorethyl ether) and dimethylbenzylalkylammonium chloride. A schematic diagram of the extraction separation of elements-admixture is presented showing the aqueous and organic phases. The content percentage of the various elements are given in tables.

Artyukhin, P. I.↗

High performance, inexpensive solar cell process capable of a high degree of automation

This paper proposes a process for inexpensive high performance solar cell fabrication that can be automated for further cost reduction and higher throughputs. The unique feature of the process is the use of oxides as doping sources for simultaneous n(+) junction formation and back p(+) layer, as a mask for metallization and as an in situ AR coating for spectrum matching. Cost analysis is performed to show that significant cost reductions over the conventional process is possible using the proposed scheme and the cost intensive steps are identified which can be further reduced to make the process compatible with the needed price goals of 50 cents/watt. The process was demonstrated by fabricating n(+)-p cells using Arsenic doped oxides. Simple n(+)-p structure cells showed corrected efficiencies of 14.5% (AMO) and 12% with doped oxide as an in situ antireflection coating.

Shah, P.↗

Long-term temperature effects on GaAs solar cells

The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included.

Heinbockel, J. H.↗

Investigation of electrical noise in selenium-immersed thermistor bolometers

The selenium immersed, thermistor bolometer, IR detector failed due to spurious and escalating electrical noise outburst as a function of time at elevated temperatures during routine ground based testing in a space simulated environment. Spectrographic analysis of failed bolometers revealed selenium pure zones in the insulating selenium arsenic (Se-As) glass film which surrounds the active sintered Mn, Ni, Co oxide flake. The selenium pure film was identified as a potentially serious failure mechanism. Significant changes were instituted in the manufacturing techniques along with more stringent process controls which eliminated the selenium pure film and successfully produced 22study bolometers.

Tarpley, J. L.↗

Effects of heavy metals on the absorbance and reflectance spectra of plants

The spectral responses of plants to various concentrations of heavy metals in their rooting media are investigated in relation to the application of remote sensing methods to the detection of vegetation under stress. Absorption photometry of chloroplasts, measurements of metal and chlorophyll concentrations and reflectance spectrometry were performed on leaves of pea, sunflower and soybean plants grown under greenhouse conditions with the addition of various concentrations of Cd, Cu, Pb and Zn to their rooting media and on leaves of oak trees growing naturally in an area of a copper-arsenic mineralization. Under laboratory conditions, the most general effect observed was growth inhibition and ultimately death, with pea plants also exhibiting changes of chlorophyll a/ chlorophyll b ratios with Cd and Cu and reflectance increases in the visible and decreases in the infrared. Although results for other species indicate that reflectance effects are dependent on species, correlations between reflectance and metal exposure is confirmed by the field investigations. It is concluded that a remote sensing system would be improved by the inclusion of bands around 1.65 and 2.20 microns to detect soil mineralization from plant spectra.

Horler, D. N. H.↗

Chemical depth profiles of the GaAs/native oxide interface

The final-state oxidation products and their distribution in thin native oxides (30-40 A) on GaAs have been studied using X-ray photoelectron spectroscopy in conjunction with chemical depth profiling. Extended room-temperature-oxidation conditions have been chosen to allow the native oxide to attain its equilibrium composition and structure. The work emphasizes the use of chemical depth-profiling methods which make it possible to examine the variation in chemical reactivity of the oxide structure. A minimum of two distinct regions of Ga2O3 with differing chemical reactivity is observed. Chemical shift data indicate the presence of As2O3 in the oxide together with an elemental As overlayer at the interface. A change in relative charge transfer between oxygen and both arsenic and gallium-oxide species is observed in the region of the interface.

Grunthaner, P. J.↗

Some aspects of analytical chemistry as applied to water quality assurance techniques for reclaimed water: The potential use of X-ray fluorescence spectrometry for automated on-line fast real-time simultaneous multi-component analysis of inorganic pollutants in reclaimed water

The potential use of isotopically excited energy dispersive X-ray fluorescence (XRF) spectrometry for automated on line fast real time (5 to 15 minutes) simultaneous multicomponent (up to 20) trace (1 to 10 parts per billion) analysis of inorganic pollutants in reclaimed water was examined. Three anionic elements (chromium 6, arsenic and selenium) were studied. The inherent lack of sensitivity of XRF spectrometry for these elements mandates use of a preconcentration technique and various methods were examined, including: several direct and indirect evaporation methods; ion exchange membranes; selective and nonselective precipitation; and complexation processes. It is shown tha XRF spectrometry itself is well suited for automated on line quality assurance, and can provide a nondestructive (and thus sample storage and repeat analysis capabilities) and particularly convenient analytical method. Further, the use of an isotopically excited energy dispersive unit (50 mCi Cd-109 source) coupled with a suitable preconcentration process can provide sufficient sensitivity to achieve the current mandated minimum levels of detection without the need for high power X-ray generating tubes.

Ling, A. C.↗

Infrared spectra of some sulfides and their analogs of binary composition in the long-wave region

The far infrared spectra (500-60/cm) of some simple sulfides and their analogs were studied. In all, 22 minerals with different structure types were investigated, out of which 14 are sulfides (galena, alabandite, pyrrhotite, sphalerite, wurtzite, cinnabar, realgar, orpiment, getchelite antimonite, molybdenite, pyrite, marcasite and heazlewoodite) 6 arsenides (niccolite, domeykite, arsenopyrite, lollingite, rammelsbergite and skutterudite), one telluride (tetradymite) and native arsenic. The main bands of infrared absorption spectra of the minerals are compared with the relative strength of the interatomic bonds and their interpretation is given.

Povarennykh, A. S.↗

Removing Chlorides From Metallurgical-Grade Silicon

Process for making low-cost silicon for solar cells is further improved. Silane product recycled to feed stripper column converts some of heavy impurities to volatile ones that pass off at top of column with light wastes. Impurities--chlorides of arsenic, phosphorus, and boron-would otherwise be carried to subsequent distillations where they would be difficult to remove. Since only a small amount of silane is recycled, silicon production efficiency remains high.

Breneman, W. C.↗

Etching and Growth of GaAs

In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

Seabaugh, A. C.↗

Evaporated As2S3 Luneburg lenses for LiNbO3:Ti optical waveguides

Luneburg lenses of good quality were formed on high index optical waveguides by evaporation of arsenic trisulfide glass through simple masks. Using only two thin circular aperture masks, lenses with focal spots of a few times the diffraction limited width at f/4 were obtained. These lenses were designed for and tested at both visible (633 nm) and infrared wavelengths. Procedures for the design, fabrication, and testing of lenses of this type are described.

Busch, J. R.↗

Secondary lithium batteries for space applications

Secondary lithium cells which use a LiAsF6-2-Me-THF electrolyte and a TiS2 intercalatable cathode exhibit encouraging cycle life at ambient temperature. Electrochemical and surface analytical studies indicate that the electrolyte is unstable in the presence of metallic lithium, leading to the formation of a lithium passivating film composed of lithium arsenic oxyfluorides and lithium fluorsilicates. The lithium cyclability remains as the most important problem to solve. Different electrolyte solvents, such as sulfolane, exhibit promising characteristics but lead to new compatibility problems with the other cell component materials.

Carter, B.↗

A thermochemical model of radiation damage and annealing applied to GaAs solar cells

Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

Conway, E. J.↗

Design, fabrication and evaluation of chalcogenide glass Luneburg lenses for LiNbO3 integrated optical devices

Optical waveguide Luneburg lenses of arsenic trisulfide glass are described. The lenses are formed by thermal evaporation of As2S3 through suitably placed masks onto the surface of LiNbO3:Ti indiffused waveguides. The lenses are designed for input apertures up to 1 cm and for speeds of f/5 or better. They are designed to focus the TM sub 0 guided mode of a beam of wavelength, external to the guide, of 633 nm. The refractive index of the As2S3 films and the changes induced in the refractive index by exposure to short wavelength light were measured. Some correlation between film thickness and optical properties was noted. The short wavelength photosensitivity was used to shorten the lens focal length from the as deposited value. Lenses of rectangular shape, as viewed from above the guide, as well as conventional circular Luneburg lenses, were made. Measurements made on the lenses include thickness profile, general optical quality, focal length, quality of focal spot, and effect of ultraviolet irradiation on optical properties.

Wood, V. E.↗

Holographic fabrication of gratings in metal substrates

A program for investigating the grain enlargement resulting from the laser recrystallization of a thin gallium arsenide film on a patterned substrate, a technique known as graphoepitaxy was evaluated. More specifically, the effects of recrystallizing an uncapped gallium arsenide film using a continuous wave neodymium YAG laser operating at 1.06 microns were studied. In an effort to minimize arsenic loss from the film, the specimens were held in an arsine atmosphere during recrystallization. Two methods for fabricating patterned substrates were developed, one using reactive ion etching of a molybdenum film on both sapphire and silicon substates and another by preferential wet etching of a silicon substrate onto which a film of molybdenum was subsequently deposited.

Fletcher, R. M.↗

Luneburg lens and optical matrix algebra research

Planar, as opposed to channelized, integrated optical circuits (IOCs) were stressed as the basis for computational devices. Both fully-parallel and systolic architectures are considered and the tradeoffs between the two device types are discussed. The Kalman filter approach is a most important computational method for many NASA problems. This approach to deriving a best-fit estimate for the state vector describing a large system leads to matrix sizes which are beyond the predicted capacities of planar IOCs. This problem is overcome by matrix partitioning, and several architectures for accomplishing this are described. The Luneburg lens work has involved development of lens design techniques, design of mask arrangements for producing lenses of desired shape, investigation of optical and chemical properties of arsenic trisulfide films, deposition of lenses both by thermal evaporation and by RF sputtering, optical testing of these lenses, modification of lens properties through ultraviolet irradiation, and comparison of measured lens properties with those expected from ray trace analyses.

Wood, V. E.↗

Japan's participation in space station design: Feasibility study of GaAs solar cells for space station applications

The report gives the results of feasibility studies and a cost analysis done on GaAs solar battery cells for space stations. The studies and their results are as follows: (1) Cell size - The 2 x 4 cm cell size was found superior to the 4 x 4 cm cell; (2) Manufacturing technology - Overall, LPE crystal growth was found more suitable than MO-CVD. Current technology for post-growth processes and applying large-area cover glass can be used with few or no modifications; (3) Cell assemblies - Tests for mechanical and thermal stresses encountered from assembly through operation are recommended; (4) Procuring materials - Steps should be taken to avoid sharp price increases due to a speculative gallium market. There are no problems with arsenic materials; (5) Production facilities - The capital investment needed remains to be determined, but a working area of 4000 m2 will be required; (6) Cell costs to be determined; (7) Cell development-supply plan - Two-year lead time will be needed to develop the necessary technology and prepare for production.

Source record↗

Calculation of recoil implantation profiles using known range statistics

A method has been developed to calculate the depth distribution of recoil atoms that result from ion implantation onto a substrate covered with a thin surface layer. The calculation includes first order recoils considering projected range straggles, and lateral straggles of recoils but neglecting lateral straggles of projectiles. Projectile range distributions at intermediate energies in the surface layer are deduced from look-up tables of known range statistics. A great saving of computing time and human effort is thus attained in comparison with existing procedures. The method is used to calculate recoil profiles of oxygen from implantation of arsenic through SiO2 and of nitrogen from implantation of phosphorus through Si3N4 films on silicon. The calculated recoil profiles are in good agreement with results obtained by other investigators using the Boltzmann transport equation and they also compare very well with available experimental results in the literature. The deviation between calculated and experimental results is discussed in relation to lateral straggles. From this discussion, a range of surface layer thickness for which the method applies is recommended.

Fung, C. D.↗