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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

A model was developed for the operation of a GaN pn junction vertical diode which includes rate equations for carrier capture and thermally activated emission by substitutional carbon impurities and carrier generation by ionizing radiation. The model was used to simulate the effect of ionizing radiation on the charge state of carbon. These simulations predict that with no applied bias, carbon is negatively charged in the n-doped layer, thereby compensating n-doping as experimentally observed in diodes grown by metal-organic chemical vapor deposition. With reverse bias, carbon remains negative in the depletion region, i.e., compensation persists in the absence of ionization but is neutralized by exposure to ionizing radiation. This increases charge density in the depletion region, decreases the depletion width, and increases the capacitance. The predicted increase in capacitance was experimentally observed using a pulsed 70 keV electron beam as the source of ionization. In additional confirming experiments, the carbon charge-state conversion was accomplished by photoionization using sub-bandgap light or by the capture of holes under forward bias.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Enhancing the electron mobility in Si-doped (010) β-Ga 2 O 3 films with low-temperature buffer layers

We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga 2 O 3 epitaxial thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 °C) un-doped Ga 2 O 3 buffer was grown, followed by a transition layer to a high-temperature (HT, 810 °C) Si-doped Ga 2 O 3 channel layers without growth interruption. The (010) Ga 2 O 3 Fe-doped substrate cleaning uses solvent cleaning, followed by additional hydrofluoric acid (49% in water) treatment for 30 min before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer–substrate interface that originates from the substrate polishing process or contamination from the ambient. From secondary ion mass spectroscopy (SIMS) analysis, the Si peak atomic density at the substrate interface is found to be several times lower than the Fe atomic density in the substrate—indicating full compensation. The elimination of the parasitic electron channel at the epi–substrate interface was also verified by electrical (capacitance–voltage profiling) measurements. In the LT-grown (600 °C) buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp, with a decay rate of ∼9 nm/dec. X-ray off-axis rocking curve ω-scans show very narrow full width at half maximum (FWHM) values, similar to the as-received substrates. These channels show record high electron mobility in the range of 196–85 cm 2 /V⋅s in unintentionally doped and Si-doped films in the doping range of 2 × 10 16 –1 × 10 20 cm −3 . Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT buffers. Record high electron Hall mobility of 110 cm 2 /V⋅s was measured for sheet charge density of 9.2 × 10 12 cm −2 . This substrate cleaning, combined with the LT buffer scheme, shows the potential of designing Si-doped β-Ga 2 O 3 channels with exceptional transport properties for high-performance Ga 2 O 3 -based electron devices.

Bhattacharyya, Arkka↗
DOE OSTI2023

Identification and characterization of deep nitrogen acceptors in β-Ga 2 O 3 using defect spectroscopies

The ability to achieve highly resistive beta-phase gallium oxide (β-Ga 2 O 3 ) layers and substrates is critical for β-Ga 2 O 3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at E C -0.8 eV in the β-Ga 2 O 3 bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at E C -2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and E C -2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor with a configuration of N occupying the oxygen site III [N O(III) ]. The near ideal efficiency for this state to compensate free electrons and its location toward the midgap region of the β-Ga 2 O 3 bandgap demonstrates the potential of N doping as a promising approach for producing semi-insulating β-Ga 2 O 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Frequency transfer via an ultra-stable free-space link

An optical frequency transfer at a wavelength of 1542 nm via an ultra-stable 5-m free-space link with active compensation of the phase noise caused by atmospheric fluctuations is demonstrated. The link-induced phase noise and its contribution to the frequency transfer instability are investigated. It is shown that, with the phase compensation system switched on, the link contribution to the relative transfer instability in terms of Allan deviation reaches 1.7 × 10{sup −19} for a 5000-s averaging time. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Deficiency in transmitter release triggers homeostatic transcriptional changes that increase presynaptic excitability

Weakening of synaptic transmission at theDrosophilalarval neuromuscular junction triggers two forms of homeostatic compensation, one that increases the probability of glutamate release per action potential (P r ) and another that increases motoneuron (MN) activity. We investigated the molecular changes in MNs that underlie the increase in MN activity. RNA sequencing (RNA-seq) analysis on MNs whose glutamate release is weakened by knockdown of components of the MN transmitter release machinery reveals a reduction in expression of a group of genes that encode potassium channels and their positive modulators. These results identify a mechanism of compensation for weakened synaptic transmission by MNs, which engages a transcriptional program in those cells to increase firing and, thereby, ensure sufficient locomotory drive.

Science & Technology - Other Topics↗
DOE OSTI2020

Strong surface magnetic field generation in relativistic short pulse laser–plasma interaction with an applied seed magnetic field

Abstract While plasma often behaves diamagnetically, we demonstrate that the laser irradiation of a thin opaque target with an embedded target-transverse seed magnetic field B seed can trigger the generation of an order-of-magnitude stronger magnetic field with opposite sign at the target surface. Strong surface field generation occurs when the laser pulse is relativistically intense and results from the currents associated with the cyclotron rotation of laser-heated electrons transiting through the target and the compensating current of cold electrons. We derive a predictive scaling for this surface field generation, B gen ∼ −2 πB seed Δ x / λ 0 (in the large spot size limit), where Δ x is the target thickness and λ 0 is the laser wavelength, and conduct 1D and 2D particle-in-cell simulations to confirm its applicability over a wide range of conditions. We additionally demonstrate that both the seed and surface-generated magnetic fields can have a strong impact on application-relevant plasma dynamics, for example substantially altering the overall expansion and ion acceleration from a μ m-thick laser-irradiated target with a kilotesla-level seed magnetic field.

Weichman, K. (ORCID:0000000234877922)↗
DOE OSTI2025

Error field measurements with rotating RMP fields for DIII-D H-mode

3D magnetic sensors are employed to identify the amplitude and toroidal phase of error fields (EF) by analyzing the torque balance for magnetic islands entrained by rotating resonant magnetic perturbations (RMPs) in DIII-D H-mode plasmas. This technique of torque balance allows for efficient error field identification, offering a valuable tool for scenario-specific and optimized error field compensation (EFC) and requires only magnetic diagnostics. The torque balance used in this work includes the contribution from electromagnetic torque due to error fields, wall response, RMP fields, and viscous. Results show that viscous torque plays a crucial role, particularly during locked modes and H-mode plasmas, ensuring accurate data fits with lower residuals. The torque balance technique reveals that the L- and H-mode plasmas have distinct EF configurations, and consistent with a model-based EF analysis including MHD response in IPEC and the SURFMN EF simulation. This technique shows great robustness in measuring the intrinsic EF amplitude regardless of its amplitude or toroidal phase. Repeated discharges with EFC disparities exhibit consistent results of intrinsic error field within a reasonable range near the “standard” error field compensation. Additionally, the use of a rotating n = 1 resonant magnetic perturbation offers the advantage of reducing disruption risks by entraining saturated magnetic islands. These findings are instrumental for optimizing EF correction in fusion devices, thereby enhancing tearing mode suppression and overall plasma stability.

3D magnetic sensors↗
DOE OSTI2022

Concept of circular-linear energy recovery accelerator to probe the energy frontier

Energy-frontier accelerators provide powerful tools performing high precision measurements confirming the fundamentals of the physics and broadening new research horizons. Such machines are either driven by circular or linear accelerators. The circular machines, having the centre-of-mass (CM) energy values reaching 200 GeV (for leptons) and above, experience beam energy loss and quality dilution, for example, due to synchrotron radiation, limiting the overall CM energy achievable and requiring a constant energy top-up to compensate the loss and the beam quality dilution. Linear colliders overcome these limitations, while the finite capabilities of generating high average current beams limits the luminosity. This is partially compensated by the quality of the colliding beams. In this work, we suggest a novel design of circular-linear accelerator based on the merging of the “non-emitting”, low-energy storage rings and energy recovery linear accelerators. We suggest using the recently considered dual-axis asymmetric cavities to enable the operation of such a system, and in particular the energy recovery from spent, high-intensity beams. The machine considered, under the scope of the SNOWMASS-2021 initiative, can be potentially used to reach ultimate energy frontiers in high-energy physics as well as to drive next generation light sources. The merging of circular and linear systems, and applications of dual axes cavities, should allow the maintaining of high beam quality, high luminosity, and high energy efficiency, while offering a flexible energy management and opening clear opportunity for reducing the running cost. We note that the numbers shown in the paper are for illustration purpose and can be improved further.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Complexities of urban impacts on long-term seasonal trends in a mid-sized arid city

The variability of surface air temperature is of great importance for both society and the environment, is impacted by global warming and local-scale changes. In the arid eastern part of Washington state of USA, substantial urbanization has transformed the Tri-cities into the state’s third-largest urban cluster. This study utilizes a combination of in situ observations and reanalysis datasets to investigate the influence of land use changes on the region’s 2-meter temperature, revealing local effects that compensate for the background global warming. Within the urban fabric, distinct microclimates have emerged due to varying land use, establishing unique relationships between greenness and temperature alterations caused by land use transitions. Notably, our findings demonstrate that the observed compensating signal in the temperature of farmland locations is primarily attributed to local vegetation increases. Through these observations, this research highlights the urban impacts on local climate, offering valuable insights into the complexities surrounding land use and its consequences on the environment.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
DOE OSTI2023

CRISPR/Cas9 mutants delineate roles of Populus FT and TFL1/CEN/BFT family members in growth, dormancy release and flowering

Abstract Vegetative and reproductive phase change and phenology are economically and ecologically important traits. Trees typically require several years of growth before flowering and, once mature, seasonal control of the transition to flowering and flower development is necessary to maintain vegetative meristems and for reproductive success. Members of two related gene subfamilies, FLOWERING LOCUST (FT) and TERMINAL FLOWER1 (TFL1)/CENTRORADIALIS (CEN)/BROTHER OF FT AND TFL1 (BFT), have antagonistic roles in flowering in diverse species and roles in vegetative phenology in trees, but many details of their functions in trees have yet to be resolved. Here, we used CRISPR/Cas9 to generate single and double mutants involving the five Populus FT and TFL1/CEN/BFT genes. The ft1 mutants exhibited wild-type-like phenotypes in long days and short days, but after chilling, to release dormancy, they showed delayed bud flush and GA3 could compensate for the ft1 mutation. After rooting and generating some phytomers in tissue culture, both cen1 and cen1ft1 mutants produced terminal as well as axillary flowers, indicating that the cen1 flowering phenotype is independent of FT1. The CEN1 showed distinct circannual expression patterns in vegetative and reproductive tissues and comparison with the expression patterns of FT1 and FT2 suggests that the relative levels of CEN1 compared with FT1 and FT2 regulate multiple phases of vegetative and reproductive seasonal development.

Forestry↗
DOE OSTI2020

Wilson Prize article: Transverse phase-space manipulations in electron accelerators

I am honored and grateful that my contributions to phase-space manipulations in general, and emittance compensation specifically, have been recognized by the Wilson Prize. The purpose of this article is to bring together what I believe to be the most important elements of the broad topic of transverse phase-space manipulations, focusing on the underlying beam physics which enable these types of schemes. We see that emittance compensation can be categorized as an example of the larger class of nonsymplectic manipulations. While the discussion is specifically focused on electron beams, much of the physics can also pertain to ion beams.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Tomography of longitudinal phase space linearization for the generation of attosecond electron bunches

The generation of electron bunches on the attosecond timescale is important for a multitude of accelerator-based applications. Here, we report on a tomographic measurement of the (pre)linearized longitudinal phase space of a low charge 3 MeV electron bunch generated with the 1.6 cell Pegasus photoinjector for the generation of attosecond bunches. The nonlinear correlations in the longitudinal phase space induced by space charge at the photocathode, radiofrequency field curvature of the gun, and vacuum dispersion are compensated using a compact X-band linearizer. Then, the initial and compensated phase of the picosecond electron bunch is precisely reconstructed by neural network assisted tomographic reconstruction from momentum spectra at varying buncher linac phase. Finally, we combine the measured phase space shape with particle tracking simulations to show that electron bunches as short as 941 as develop downstream the beamline.

Beam control↗
DOE OSTI2020

Effects of filling, strain, and electric field on the Néel vector in antiferromagnetic CrSb

CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high Néel temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of Néel vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined and analyzed using density functional theory. The MAE of the bulk crystal is large (1.2 meV per unit cell). Due to the significant ionic nature of the Cr-Sb bond, finite slabs are strongly affected by end termination. Truncation of the bulk crystal to a thin film with one surface terminated with Cr and the other surface terminated with Sb breaks inversion symmetry, creates a large charge dipole and average electric field across the film, and breaks spin degeneracy, such that the thin film becomes a ferrimagnet. The MAE is reduced such that its sign can be switched with realistic strain, and the large SOC gives rise to an intrinsic voltage controlled magnetic anisotropy. A slab terminated on both faces with Cr remains a compensated AFM, but with the compensation occurring nonlocally between mirror-symmetric Cr pairs. In-plane alignment of the moments is preferred, the magnitude of the MAE remains large, similar to that of the bulk, and it is relatively insensitive to filling.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Point defects and doping in wurtzite LaN

Wurtzite LaN (wz-LaN) is a semiconducting nitride that has piezoelectric and ferroelectric properties, making it promising for applications in electronics, either as a binary compound or in alloys such as LaAlN. The prospects for wz-LaN in devices are influenced by the properties of point defects and impurities; here, we use first-principles density functional theory with a hybrid functional to calculate their formation energies, as well as their atomic and electronic structures. Among native point defects, we find that nitrogen-related defects, both vacancies ($V^+_N$) and interstitials ($N^-_i$), are energetically most favorable under most relevant chemical potentials and positions of the Fermi level; $V^0_N$ may additionally be observed under N-poor conditions, and $N^0_i$ may be prominent under N-rich conditions. We also investigate the incorporation of oxygen and hydrogen, which will likely be present as unintentional impurities. We find that the $O^+_N$ substitutional species readily forms, but oxygen will not lead to n-type conductivity due to formation of DX centers and compensation by interstitial defects. Similarly, substitutional HN and interstitial H i can compensate both p- and n-type dopants. Our results provide detailed, microscopic guidance for the development of electronic devices based on wz-LaN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

A Modular Integration Design of LCL Circuit Featuring Field Enhancement and Misalignment Tolerance for Wireless EV Charging

One of the major challenges of high-order wireless charging circuit is to reduce the system volume and cost induced by its additional components. Based on an LCL-S circuit, this paper proposes a modular integration design, in which an identical compensation inductor and transmitter are closely coupled. A new compensation method is derived to enable zero phase angle (ZPA) and constant current (CC) output. Identical currents are fed into the same reference terminals of both inductors to enable transmission field enhancement and to eliminate reactive power flow between the inductors. A misalignment tolerant coil is used to improve the output power stability under random parking imperfection. The proposed integration design achieves enhanced transmission capacity. Experiments are carried out to verify the proposed design.

Zhang, Pengcheng↗
DOE OSTI2022

A Single-Stage Multilevel AC-DC Bidirectional Converter With Natural Grid Harmonic Elimination

Generally, AC-DC converters have an AC-DC stage followed by a DC-DC stage. In these two stage approaches, the AC-DC stage is hard-switched, whereas the DC-DC stage is soft-switched. Therefore, the devices in the AC-DC stage can be switched only at tens of kHz to avoid excessive switching losses, thus limiting the bandwidth of the current control loop. Hence, the control of these converters with distorted grid voltages requires multiple harmonic compensation loops or other complex control algorithms in order for the grid currents to comply with IEEE standards. By integrating both the stages, the devices in the AC-DC stage can also be soft-switched, thus facilitating higher switching frequency, and thereby higher current control bandwidth. This paper proposes an integrated multilevel bidirectional AC-DC converter with improved control bandwidth and disturbance rejection. It is shown experimentally that the high bandwidth current control loop of the converter can reject grid harmonic current disturbances, without the need for any compensation loops or complex control techniques, and comply with IEEE standards.

30 DIRECT ENERGY CONVERSION↗