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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

On the influence of polarization effects in predicting the interfacial structure and capacitance of graphene-like electrodes in ionic liquids

The electric double layer (C{sub D}) and electrode quantum (C{sub Q}) capacitances of graphene-based supercapacitors are investigated using a combined molecular dynamics and density functional theory approach. In particular, we compare an approach that includes electronic polarization to one that is polarization-free by evaluating both C{sub D} and C{sub Q} using [EMIM][BF{sub 4}] ionic liquid as a model electrolyte. Our results indicate that the inclusion of polarization effects can yield higher C{sub D} values—in this study by up to 40% around ±2 V—which we attribute primarily to the presence of charge smearing at the electrode-electrolyte interface. On the other hand, we find that the polarization-induced distortion of the electronic structure of graphene does not noticeably alter the predicted C{sub Q}. Our analysis suggests that an accurate description of the spatial charge distribution at the graphene interface due to polarization is necessary to improve our predictive capabilities, though more notably for C{sub D}. However, the conventional polarization-free approximation can serve as an efficient tool to study trends associated with both the C{sub Q} and C{sub D} at the interface of various graphene-like materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Online monitoring of oil film using electrical capacitance tomography and level set method

In the application of oil-air lubrication system, electrical capacitance tomography (ECT) provides a promising way for monitoring oil film in the pipelines by reconstructing cross sectional oil distributions in real time. While in the case of small diameter pipe and thin oil film, the thickness of the oil film is hard to be observed visually since the interface of oil and air is not obvious in the reconstructed images. And the existence of artifacts in the reconstructions has seriously influenced the effectiveness of image segmentation techniques such as level set method. Besides, level set method is also unavailable for online monitoring due to its low computation speed. To address these problems, a modified level set method is developed: a distance regularized level set evolution formulation is extended to image two-phase flow online using an ECT system, a narrowband image filter is defined to eliminate the influence of artifacts, and considering the continuity of the oil distribution variation, the detected oil-air interface of a former image can be used as the initial contour for the detection of the subsequent frame; thus, the propagation from the initial contour to the boundary can be greatly accelerated, making it possible for real time tracking. To testify the feasibility of the proposed method, an oil-air lubrication facility with 4 mm inner diameter pipe is measured in normal operation using an 8-electrode ECT system. Both simulation and experiment results indicate that the modified level set method is capable of visualizing the oil-air interface accurately online.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly contrasted SCM signals were obtained between the ZnO layers with different Ga densities. Through comparison with dopant depth profiles from secondary ion mass spectroscopy measurement, it is demonstrated that SCM is able to distinguish carrier concentrations at all levels of the samples (from 2 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3}). The good agreement of the results from the two techniques indicates that SCM can be a useful tool for two dimensional carrier profiling at nanoscale for ZnO nanostructure development. As an example, residual carrier concentration inside the non-intentionally doped buffer layer was estimated to be around 2 × 10{sup 16 }cm{sup −3} through calibration analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Analytical carrier density and quantum capacitance for graphene

A disorder based analytical carrier density for graphene is presented here. The carrier density, a basic property of all semiconductors, is obtained based on exponential distribution describing the potential fluctuations induced by impurities and shows good agreement with numerical results. The quantum capacitance is subsequently derived from the carrier density, with a good agreement with experimental measurements. A method for extracting the gate coupling function is also proposed, which relates the internal surface potential with the external applied gate voltage. The essential properties of graphene device physics, such as the temperature, material disorder, and surface potential dependences, are captured in these analytical equations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Mutual capacitance of liquid conductors in deformable tactile sensing arrays

Advances in highly deformable electronics are needed in order to enable emerging categories of soft computing devices ranging from wearable electronics, to medical devices, and soft robotic components. The combination of highly elastic substrates with intrinsically stretchable conductors holds the promise of enabling electronic sensors that can conform to curved objects, reconfigurable displays, or soft biological tissues, including the skin. Here, we contribute sensing principles for tactile (mechanical image) sensors based on very low modulus polymer substrates with embedded liquid metal microfluidic arrays. The sensors are fabricated using a single-step casting method that utilizes fine nylon filaments to produce arrays of cylindrical channels on two layers. The liquid metal (gallium indium alloy) conductors that fill these channels readily adopt the shape of the embedding membrane, yielding levels of deformability greater than 400%, due to the use of soft polymer substrates. We modeled the sensor performance using electrostatic theory and continuum mechanics, yielding excellent agreement with experiments. Using a matrix-addressed capacitance measurement technique, we are able to resolve strain distributions with millimeter resolution over areas of several square centimeters.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Cross-section imaging and p-type doping assessment of ZnO/ZnO:Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance microscopy

ZnO/ZnO:Sb core-shell structured nanowires (NWs) were grown by the metal organic chemical vapor deposition method where the shell was doped with antimony (Sb) in an attempt to achieve ZnO p-type conduction. To directly investigate the Sb doping effect in ZnO, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were performed on the NWs' cross-sections mapping their two dimensional (2D) local electrical properties. Although no direct p-type inversion in ZnO was revealed, a lower net electron concentration was pointed out for the Sb-doped ZnO shell layer with respect to the non-intentionally doped ZnO core, indicating an evident compensating effect as a result of the Sb incorporation, which can be ascribed to the formation of Sb-related acceptors. The results demonstrate SCM/SSRM investigation being a direct and effective approach for characterizing radial semiconductor one-dimensional (1D) structures and, particularly, for the doping study on the ZnO nanomaterial towards its p-type realization.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Differential voltage amplification from ferroelectric negative capacitance

Here, we demonstrate that a ferroelectric can cause a differential voltage amplification without needing an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only has fundamental ramifications for next generation electronics.

42 ENGINEERING↗
DOE OSTI2023

Kinetic simulation of a 50 mTorr capacitively coupled argon discharge over a range of frequencies and comparison to experiments

The effect of driving frequency in the range of 13.56–73 MHz on electron energy distribution and electron heating modes in a 50 mTorr capacitively coupled argon plasma discharge is studied using 1D-3V particle-in-cell simulations. Calculated electron energy probability functions exhibit three distinct “temperatures” for low-, mid-, and high-energy electrons at all the studied driving frequencies. When compared to published experimental data, the calculated probability functions show a reasonable agreement for the energy range resolved in the measurements (about 2–10 eV). Discrepancies due to limitations in experimental energy resolution outside this range lead to differences between computational and experimental values of the electron number density determined from the distribution functions, and the predicted effective electron temperature is within 25% of experimental values. The impedance of the discharge is interpreted in terms of a homogeneous equivalent circuit model, and the driving frequency dependence of the inferred combined sheath thickness is found to obey a known, theoretically derived, power law. The average power transferred from the field to the electrons (electron heating) is computed, and a region of negative heating near the sheath edge, particularly at higher driving frequencies, is identified. Analysis of the electron momentum equation shows that electron inertia, which on temporal averaging would be zero in a linear regime, is responsible for negative values of power deposition near the sheath edge at high driving frequencies due to the highly nonlinear behavior of the discharge.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. The C - ψs technique has been suggested as a viable quasi-static method for determining the interface trap state densities in wide bandgap systems, but the results are shown to be susceptible to errors in the analysis procedure. Here this work explores the primary sources of errors present in the C - ψs technique using an analytical model that describes the apparent response for wide bandgap MOS capacitor devices. Measurement noise is shown to greatly impact the linear fitting routine of the 1/C$^{*2}_s$ vs Ψ s plot to calibrate the additive constant in the surface potential/gate voltage relationship, and an inexact knowledge of the oxide capacitance is also shown to impede interface trap state analysis near the band edge. In addition, a slight nonlinearity that is typically present throughout the 1/C$^{*2}_s$ vs Ψ s plot hinders the accurate estimation of interface trap densities, which is demonstrated for a fabricated n-SiC MOS capacitor device. Methods are suggested to improve quasi-static analysis, including a novel method to determine an approximate integration constant without relying on a linear fitting routine.

42 ENGINEERING↗
DOE OSTI2016

Capacitively coupled hydrogen plasmas sustained by tailored voltage waveforms: excitation dynamics and ion flux asymmetry

Parallel plate capacitively coupled plasmas in hydrogen at relatively high pressure (~1 Torr) are excited with tailored voltage waveforms containing up to five frequencies. Predictions of a hybrid model combining a particle-in-cell simulation with Monte Carlo collisions and a fluid model are compared to phase resolved optical emission spectroscopy measurements, yielding information on the dynamics of the excitation rate in these discharges. When the discharge is excited with amplitude asymmetric waveforms, the discharge becomes electrically asymmetric, with different ion energies at each of the two electrodes. Unexpectedly, large differences in the $\text{H}_{2}^{+}$ fluxes to each of the two electrodes are caused by the different $\text{H}_{3}^{+}$ energies. When the discharge is excited with slope asymmetric waveforms, only weak electrical asymmetry of the discharge is observed. In this case, electron power absorption due to fast sheath expansion at one electrode is balanced by electron power absorption at the opposite electrode due to a strong electric field reversal.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Magnetic probe diagnostics of nonlinear standing waves and bulk ohmic electron power absorption in capacitive discharges

It is recognized that standing wave effects appearing in large-area, very-high-frequency capacitively coupled plasma (CCP) reactors cause center-high plasma non-uniformity. Using a high-frequency magnetic probe, we present a direct experimental diagnostic of the nonlinear standing waves and bulk ohmic electron power absorption dynamics in low pressure CCP discharges for different driving frequencies of 13.56, 30, and 60 MHz. The design, principle, calibration, and validation of the probe are described in detail. Spatial structures of the harmonics of the magnetic field, determined by the magnetic probe, were used to calculate the distributions of the harmonic current and the corresponding ohmic electron power deposition, providing insights into the behavior of nonlinear harmonics. At a low driving frequency, i.e. 13.56 MHz, no remarkable nonlinear standing waves were identified and the bulk ohmic electron power absorption was observed to be negligible. Here, the harmonic magnetic field/current was found to increase dramatically with the driving frequency, due to decreased sheath reactance and more remarkable nonlinear standing waves at a higher driving frequency, leading to the enhancements of the ohmic heating and the plasma density in the bulk, specifically at the electrode center. At a high driving frequency, i.e. 60 MHz, the high-order harmonic current density and the corresponding ohmic electron power absorption exhibited a similar node structure, with the main peak on axis, and one or more minor peaks between the electrode center and the edge, contributing to the center-high profile of the plasma density.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Dual Mechanism for Transient Capacitance Anomaly in Improper Ferroelectrics

Negative capacitance (NC) effects in ferroelectrics can potentially break fundamental limits of power dissipation known as “Boltzmann tyranny.” However, the origin of transient NC of ferroelectrics, which is attributed to two different mechanisms involving free-energy landscape and nucleation, is under intense debate. Here, we report the coexistence of transient NC and an S-shaped anomaly during the switching of ferroelectric hexagonal ferrites capacitor in an RC circuit. The early-stage NC arises from the nucleation process, while the late-stage S-shaped anomaly corresponds to a nascent NC associated with the free-energy landscape. The entire waveform can be reproduced using a hybrid model that simultaneously incorporates these two mechanisms. These results highlight the multivariable free-energy landscape of hexagonal ferrites that enables an abrupt change of the internal field and demonstrate that the two mechanisms are not mutually exclusive, resolving the long-standing debate. In conclusion, the behavior of the S-shaped anomaly also provides a pathway to extract parameters of free-energy landscape and switching dynamics.

Capacitance↗
DOE OSTI2022

Development and Validation of Resistance-Capacitance Model for Phase Change Material Embedded in Porous Media

A simple and effective way to enhance PCM thermal conductivity is by embedding porous materials with high thermal conductivities. In this work, CFD was used to evaluate the melting of PCM embedded in metal foam supplied with constant heat flux. Good agreement between experimental and numerical results has been found with a mean PCM local temperature deviation of 1.62K and 2.97K in two locations. The CFD simulation time was 56 hours for 6.5 hours of flow time. A computationally efficient resistance capacitance-based model (RCM) was developed to improve simulation speed. The proposed RCM exhibited mean local temperature deviations of 1.86K and 2.96K when compared against the experimental data for two thermocouple positions, however, it was approximately 2.5x10 5 times faster than CFD. The charging time deviation was less than 1% compared to CFD, and no significant change in thermal energy stored was observed since the temperature differences were small enough to result in insignificant sensible heat deviation. A simulation cost-effectiveness index (CEI) considering accuracy and computational affordability was introduced; the CEI of the RCM solver is 10 3 times better compared to CFD for the prediction of local PCM temperature.

25 ENERGY STORAGE↗
DOE OSTI2021

Negative Capacitance MgZnO-Channel Thin-Film Transistor With Ferroelectric NiMgZnO in the Gate Stack

We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg 0.03 Zn 0.97 O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni 0.02 Mg 0.15 Zn 0.83 O (NMZO) serves as the ferroelectric layer in the NMZO/SiO 2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current ID reaches 10 9 .

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

A Bulk-Capacitance Reduction Method Using Self-Driven Thyristor for AC-DC Converters

Universal serial bus power delivery (USB-PD) fast chargers equipped with wide-bandgap devices are driven to higher power density and efficiency. Furthermore, the indispensable high-voltage bulk capacitors used to smooth the rectifier output could take 40% of the total system volume due to the large capacitance value required. This paper discussed a capacitor reduction method using a self-driven thyristor scheme comprised of only three components in total. No extra control circuit is needed. Circuit analysis and design equations are presented, and the design results are implemented in a 60-W GaN-based active-clamp flyback converter. The measurement results on the prototype show a 36.4% reduction of the bulk-capacitor size with similar efficiency compared to the conventional solution.

30 DIRECT ENERGY CONVERSION↗