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At least 343 records · Page 19

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NASA NTRS1991

Planar doped barrier devices for subharmonic mixers

An overview is given of planar doped barrier (PDB) devices for subharmonic mixer applications. A simplified description is given of PDB characteristics along with a more complete numerical analysis of the current versus voltage characteristics of typical structures. The analysis points out the tradeoffs between the device structure and the resulting characteristics that are important for mixer performance. Preliminary low-frequency characterization results are given for the device structures, and a computer analysis of subharmonic mixer parameters and performance is presented.

Lee, T. H.↗

NASA NTRS1991

Broadly tunable high-power operation of an all-solid-state titanium-doped sapphire laser system

Broadly tunable and high-power operation of a Ti-doped sapphire laser is obtained with a diode-laser-pumped frequency-doubled Nd:YAG laser as the pump source. A maximum broadband (FWHM = 25 nm) output pulse energy of 720 microJ at 795 nm in a TEM00 mode is obtained for 1850 microJ of energy of 532-nm pump light. A minimum pulse duration of 7 nsec is obtained from a 40-mm-long cavity. With the use of an intracavity prism, the Ti:sapphire laser is tunable continuously over the 696-1000-nm spectral range (with three different mirror sets).

Steele, T. R.↗

NASA NTRS1990

Measurement of surface recombination velocity on heavily doped indium phosphide

Surface recombination velocity (SRV) on heavily doped n-type and p-type InP was measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of 100,000 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low-SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of more than 10to the 6th cm/sec.

Jenkins, Phillip↗

NASA NTRS1991

A new technique to study transient conductivity under pulsed monochromatic light in Cr-doped GaAs using acoustoelectric voltage measurement

The transient conductivity of high-resistivity Bridgman-grown Cr-doped GaAs under pulsed monochromatic light is monitored using transverse acoustoelectric voltage (TAV) at 83 K. Keeping the photon flux constant, the height and transient time constant at the TAV are used to calculate the energy dependence of the trap density and its cross section, respectively. Two prominent trap profiles with peak trap densities of approximately 10 to the 17th/cu cm eV near the valence and the conduction bands are detected. These traps have very small capture cross sections in the range of 10 to the -23 to 10 to the -21st cm sq. A phenomenon similar to the persistent photoconductivity with transient time constants in excess of a few seconds in high-resistivity GaAs at T = 83 K is also detected using this technique. These long relaxation times are readily explained by the spatial separation of the photo-excited electron-hole pairs and the small capture cross section and large density of trap distribution near the conduction band.

Tabib-Azar, Massood↗

NASA NTRS1991

Nonlinear optical effects on the surface of acridine yellow-doped lead-tin fluorophosphate glass

The second- and third-order nonlinear optical properties of acridine yellow-doped lead-tin fluorophosphate (LTF) glass have been directly studied by measurement of surface enhanced second harmonic generation and third harmonic generation. The three photon excitation fluorescence is also observed. Based on these results, the large nonlinearities of the acridine LTF system which is a new nonlinear optical material are experimentally demonstrated.

He, K. X.↗

NASA NTRS1991

Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure

Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.

Larsson, A.↗

NASA NTRS1991

Characterisation of frequency doubling in Eu(2+) doped aluminosilicate fibres

The results of a series of experiments on efficient second-harmonic generation in a fiber with a Eu(2+)-doped aluminosilicate core are reported. The fiber was prepared by the seeding method with CW mode-locked radiation at 1.06 micron and produced ultrastable peak conversion efficiencies of 0.001 during mode-locked readout. Experiments were performed to determine the IR preparation intensity dependence, the stability of the output, and the type of erasure mechanisms which occur. The results are compared with those of germanosilicate fibers and some similarities and differences are discussed.

Driscoll, T. J.↗

NASA NTRS1992

Delta-Doped Buried Channels In Charge-Coupled Device

Buried-channel charge-couple devices (CCD's) of proposed new type contain multiple thin, highly-doped channel layers instead of single relatively thick channel layers. Benefits: better performance at low temperature and less sensitivity to damage by radiation.

Fossum, Eric R.↗

NASA NTRS1991

High-T sub c fluorine-doped YBa2Cu3O(y) films on ceramic substrates by screen printing

Thick films of fluorine-doped YBa2Cu3O(y) were screen printed on highly polished alumina, magnesia spinel, strontium titanate, and yttria-stabilized zirconia (YSZ) substrates. They were annealed at 1000 C and soaked in oxygen at 450 C, followed by slow cooling to room temperature. The films were characterized by electrical resistivity measurements as a function of temperature and x-ray diffraction. The film on YSZ showed the best characteristics with a T sub c (onset) of 91 K, T sub c (R equals 0) of 88.2 K, and a transition width, delta T sub c (10-90 percent), of approximately 1.7 K. The film adhesion, probably controlled by interdiffusion of cations between the film and the substrate, was good in all cases except on strontium titanate where the film completely detached from the substrate.

Bansal, Narottam P.↗

NASA NTRS1991

Effect of doping in the Bi-Sr-Ca-Cu-O superconductor

The results of the effect of doping on the superconducting transition in the Bi-Sr-Ca-Cu-O system are reported. Samples were prepared under identical conditions with varying types (Pb, Sb, Sn, Nb) and amounts of dopants. All samples consisted of multiple phases, and showed stable and reproducible superconducting transitions. Stabilization of the well known 110 K phase depends on both the type and amount of dopant. No trace of superconducting phase of 150 K and above was observed.

Akbar, S. A.↗

NASA NTRS1991

Stabilization of high Tc phase in bismuth cuprate superconductor by lead doping

It has been widely ascertained that doping of lead in Bi-Sr-Ca-Cu-O systems promotes the growth of high T sub c (110 K) phase, improves critical current density, and lowers processing temperature. A systematic study was undertaken to determine optimum lead content and processing conditions to achieve these properties. A large number of samples with cationic compositions of Bi(2-x)Pb(x)Sr2Ca2Cu3 (x = 0.2 to 2.0) were prepared by conventional solid state reaction technique. Samples of all compositions were annealed together at a temperature and characterized through resistance temperature (R-T) measurements and x ray diffraction to determine the zero resistance temperature, T sub c(0) and to identify presence of phases, respectively. The annealing temperature was varied between 790 and 880 C to optimize processing parameters. Results are given. In brief, an optimum process is reported along with composition of leaded bismuth cuprate superconductor which yields nearly a high T sub c single phase with highly stable superconducting properties.

Gupta, Ram. P.↗

NASA NTRS1992

Erbium-doped fiber amplifier elements for structural analysis sensors

The use of erbium-doped fiber amplifiers (EDFA's) in optical fiber sensor systems for structural analysis is described. EDFA's were developed for primary applications as periodic regenerator amplifiers in long-distance fiber-based communication systems. Their in-line amplification performance also makes them attractive for optical fiber sensor systems which require long effective lengths or the synthesis of special length-dependent signal processing functions. Sensor geometries incorporating EDFA's in recirculating and multiple loop sensors are discussed. Noise and polarization birefringence are also considered, and the experimental development of system components is discussed.

Hanna-Hawver, P.↗

NASA NTRS1992

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, Samuel A.↗

NASA NTRS1991

High-power single-element pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for pumping Er-doped fiber amplifiers

A 980-nm-ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well laser with a maximum single-ended output power of 240 mW from a facet-coated device is fabricated from a graded-index separate-confinement heterostructure grown by molecular-beam epitaxy. The laser oscillates in the fundamental spatial mode, allowing 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. Life testing at an output power of 30 mW per facet from uncoated devices reveals a superior reliability to GaAs/AlGaAs quantum-well lasers but also the need for protective facet coatings for long term reliability at power levels required for pumping Er-doped fiber amplifiers.

Larsson, A.↗

NASA NTRS1991

Optical absorption by free holes in heavily doped GaAs

Optical absorption in p-type GaAs with hole concentrations between 10 exp 19 and 10 exp 20/cu cm has been measured for wavelengths between 2 and 20 microns and compared with results of theoretical calculations. In contrast to previous measurements at lower doping levels, the occupied hole states are far from the zone center, where the heavy- and light-hole bands become parallel. This gives rise to a large joint density of states for optical transitions. It is found that the overall magnitude of the observed absorption is explained correctly by the theory, with both the free-carrier (indirect) and the inter-valence-band (direct) transitions contributing significantly to the total absorption. The strength of the absorption (a about 20,000/cm for N(A) = 5 x 10 exp 19/cu cm) is attractive for long-wavelength infrared-detector applications.

Huberman, M. L.↗

NASA NTRS1992

Generation of sub-100-fs pulses from a CW mode-locked chromium-doped forsterite laser

Generation of femtosecond pulses from a continuous-wave mode-locked chromium-doped forsterite laser is reported. The forsterite laser was actively mode locked by using an acoustooptic modulator operating at 78 MHz with two Brewster high-dispersion glass prisms for intracavity chirp compensation. Transform-limited sub-100-fs pulses were routinely generated in the TEM(00) mode with 85 mW of continuous power (with 1 percent output coupler), tunable over 1230-1280 nm. The shortest pulses measured had a 60-fs pulse width.

Seas, A.↗

NASA NTRS1992

High-field transport properties of InAs(x)P(1-x)/InP (x = 0.3-1.0) modulation doped heterostructures at 300 and 77 K

Detailed measurements at 300 and 77 K have been made of the high-field transport properties of pseudomorphic InAsP/InP modulation-doped heterostructures grown by low-pressure organometallic CVD. The high-field channel velocities are comparable to or better than that of InGaAs/InAlAs heterostructures, and the transport properties of InAs/InP heterostucture suggest that carriers remain confined in the channel even at high fields.

Yang, D.↗

NASA NTRS1993

Hot Deformation Of Si(3)N(4) Doped With Sc(2)O(3)

Report describes preparation, microstructural properties, and high-temperature deformation behavior of Si(3)N(4) doped with Sc(2)O(3). Powders of Si(3)N(4) with small additions of Sc(2)O(3) sintered under nitrogen overpressures to full density; expensive hot pressing or hot isostatic pressing not necessary to attain full density. Test of bars indicate high strengths at high temperatures and excellent time-dependent strength properties. Useful for fabrication of hot-section components of automotive gas-turbine engines.

Cheong, Deock-Soo↗