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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Evaluation of Ultem 1000, 1010, and 9085 for Radome Applications at 24.5 GHz

The UAS in the NAS project Flight Test 6 (FT6) campaign scheduled for FY19Q3 will evaluate the proficiency of a Honeywell DAPA-Lite Radar installed on a Tiger Shark unmanned vehicle to detect the presence of air traffic operating in its vicinity. A 3D printed radome will be manufactured for the front of the Tiger Shark to enclose the radar during FT6 operations. The DAPA-Lite radar operates in the 24.5 GHz frequency band. Material properties of 3D printer filaments are widely available for the mechanical and thermal properties, but limited knowledge exists on the electrical properties for radome applications and no data was found to correspond at the 24.5 Ghz frequency band. To minimize project risk associated with the radome performance, transmissivity and reflectivity measurements were conducted on two candidate 3D printed dielectric material filaments (Ultem 1010 Natural and Ultem 9085 Black) and two thicknesses of a solid laminate (Ultem 1000) material. The 3D printed Ultem coupons were tested shortly after being printed and again 8 months later to examine ageing effects of the open cell structure. This paper presents the transmissivity and reflectivity measurement results collected on the Ultem coupons and concludes the 3D printed 1010 Natural coupon is a suitable candidate filament for radome applications at 24.5 GHz. The design of the structure’s open cell matrix has a significant impact on the material’s surface reflectivity.

Szatkowski, George N.↗
DOE OSTI2021

Structural and electronic properties of the first iridium containing mixed B-site spinel oxide: Cu [ Ir 1.5 Cu 0.5 ] O 4

Geometrically frustrated systems populated with large spin-orbit coupled ions are an ideal setting for the exploration of novel exotic states of matter. In this study we present an example of iridium on a mixed B-site spinel oxide structure: Cu [ Ir 1.498 ( 2 ) Cu 0.502 ( 2 ) ] O 4 . Synchrotron XRD refinements reveal a face-centered-cubic structure with space group F d 3 ¯ m and mixed Cu-Ir site disorder within the B 2 O 4 rocksalt substructure. Electrical properties reveal a metallic state within the 50–600-K range with a Kondo effect at T < 50 K . X-ray absorption spectroscopy (XAS) measurements show a mixed Cu 1 + / 2 + and Ir 3 + / 4 + charge partitioned picture, which suggests a metallic/band description with reduced on-site Coulomb interactions. Spin-glass-like freezing is seen at T g = 49 K , and the hysteresis behavior for T > T g resembles that of a strongly frustrated magnet. DFT calculations show sizable hybridization between the Cu 3 d and Ir 5 d states with an effective mixed Ir 3 + / 4 + charge partitioned picture, supporting the electronic and XAS results.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Temperature-induced degradation of GaN HEMT: An in situ heating study

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device’s structure, electrical properties, and material degradation.

36 MATERIALS SCIENCE↗
NASA NTRS2013

Multi-Scale CNT-Based Reinforcing Polymer Matrix Composites for Lightweight Structures

Reinforcing critical areas in carbon polymer matrix composites (PMCs), also known as fiber reinforced composites (FRCs), is advantageous for structural durability. Since carbon nanotubes (CNTs) have extremely high tensile strength, they can be used as a functional additive to enhance the mechanical properties of FRCs. However, CNTs are not readily dispersible in the polymer matrix, which leads to lower than theoretically predicted improvement in mechanical, thermal, and electrical properties of CNT composites. The inability to align CNTs in a polymer matrix is also a known issue. The feasibility of incorporating aligned CNTs into an FRC was demonstrated using a novel, yet commercially viable nanofiber approach, termed NRMs (nanofiber-reinforcing mats). The NRM concept of reinforcement allows for a convenient and safe means of incorporating CNTs into FRC structural components specifically where they are needed during the fabrication process. NRMs, fabricated through a novel and scalable process, were incorporated into FRC test panels using layup and vacuum bagging techniques, where alternating layers of the NRM and carbon prepreg were used to form the reinforced FRC structure. Control FRC test panel coupons were also fabricated in the same manner, but comprised of only carbon prepreg. The FRC coupons were machined to size and tested for flexural, tensile, and compression properties. This effort demonstrated that FRC structures can be fabricated using the NRM concept, with an increased average load at break during flexural testing versus that of the control. The NASA applications for the developed technologies are for lightweight structures for in-space and launch vehicles. In addition, the developed technologies would find use in NASA aerospace applications such as rockets, aircraft, aircraft/spacecraft propulsion systems, and supporting facilities. The reinforcing aspect of the technology will allow for more efficient joining of fiber composite parts, thus offering additional weight savings. More robust structures capable of withstanding micrometeoroid and space debris impacts will be possible with the enhanced mechanical properties imparted by the aligned CNTs incorporated into the fiber composite structure, as well as the potential for improved electrical and thermal properties. The materials fabrication approach developed in the present effort is a platform for customer applications where additional reinforcement is required or would be beneficial, especially in FRC structures and component parts. Depending upon the specific customer application, the NRM could be tailored to the specific matrix resin and desired property enhancement.

Eberly, Daniel↗
NASA NTRSDate not supplied

Print-Consistency and Process-Interaction for Inkjet-Printed Copper on Flexible Substrate

Printed electronics is a fastest growing and emerging technology that have shown much potential in several industries including automotive, wearables, healthcare, and aerospace. Its applications can be found not only in flexible but also in large area electronics. The technology provides an effective and convenient method to additively deposit conductive and insulating materials on any type of substrate. Comparing with traditional manufacturing processes, which involves chemical etching, this technology also comes to be relatively environmental friendly. Despite its status, it is not without its challenges. Starting from the material being compatible in the printer equipment to the point of achieving fine resolutions, and with excellent properties are some of the challenges that printed electronics face. Among the myriad of printing technologies such as Aerosol Jet, micro-dispensing, gravure printing, screen printing, Inkjet printing, Inkjet has gained much attention due to its low-cost, low material consumption, and roll-to-roll capability for mass manufacturing. The technology has been widely used in home and office, but recently gained interest in printed electronics in a research and development setting. Conductive materials used in Inkjet printing generally comprises of metal Nanoparticles that need to be thermally sintered for it to be conductive. The preferred metal of choice has been mostly silver due to its excellent electrical properties and ease in sintering. However, silver comes to be expensive than its counterpart copper. Since copper is prone to oxidation, much focus has been given towards photonic sintering that involves sudden burst of pulsed light at certain energy to sinter the copper Nanoparticles. With this technique, only the printed material gets sintered in a matter of seconds without having a great impact on its substrate, due to which it is also preferred in low temperature applications. With all the knowledge, there is still a large gap in the process side with copper where it is important to look how the print process affects the resolution of the print along with the effect of post-print processes on electrical and mechanical properties. In this paper, a copper Inkjet ink is utilized for understanding the effect of Inkjet print parameters on the ejected droplet and its resolution. Post-print process is also quantified using a photonic sintering equipment for excellent electrical and mechanical properties. To demonstrate the complete process, commercial-off-the-shelf components will also be mounted on the additively printed pads via Inkjet. Statistically, control charting technique will be utilized to understand the capability of the Inkjet process.

printed electronics↗
NASA NTRS1980

Modification of the electrical and optical properties of polymers

An electron bombardment argon ion source is used to form textured surfaces on polymide and fluorinated ethylene propylene polymers. This treatment improves the optical and electrical properties so that these polymers may be used in industrial and space applications.

Mirtich, M. J.↗
DOE OSTI2021

Many routes to ferroelectric HfO 2 : A review of current deposition methods

Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2 ), researchers are still intensely fascinated by this material system and the promise it holds for future applications. A wide variety of deposition methods have been deployed to create ferroelectric HfO 2 thin films such as atomic layer deposition, chemical solution deposition, and physical vapor deposition methods such as sputtering and pulsed laser deposition. Process and design parameters such as deposition temperature, precursor choice, target source, vacuum level, reactive gases, substrate strain, and many others are often integral in stabilizing the polar orthorhombic phase and ferroelectricity. We examine processing parameters across four main different deposition methods and their effect on film microstructure, phase evolution, defect concentration, and resultant electrical properties. The goal of this review is to integrate the process knowledge collected over the past 10 years in the field of ferroelectric HfO 2 into a single comprehensive guide for the design of future HfO 2 -based ferroelectric materials and devices.

36 MATERIALS SCIENCE↗
NASA NTRS1993

(abstract) High-T(sub c) SNS Weak Links Using Oxide Normal Metals

This work examines device results for edge-geometry SNS weak links utilizing a variety of oxide normal metals. A comparison of the electrical properties of fabricated devices and the magnetic field response will be presented. Device reproducibility will also be discussed. This talk will also examine recent progress in fabrication of epitaxial SNS weak links on silicon-on-sapphire (SOS) substrates. SNS weak links fabricated recently are under investigation, and preliminary results on these devices will be discussed.

SNS weak links oxide normal metals silicon-on-sapp↗
DOE OSTI2024

NiGa 2 O 4 interfacial layers in NiO/Ga 2 O 3 heterojunction diodes at high temperature

NiO/Ga 2 O 3 heterojunction diodes have attracted attention for high-power applications, but their high temperature performance and reliability remain underexplored. Here, we report the time evolution of the electrical properties in the widely studied p-NiO/n-Ga 2 O 3 heterojunction diodes and formation of NiGa 2 O 4 interfacial layers at high temperatures. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO–Ga 2 O 3 interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO–Ga 2 O 3 interface forms a ternary compound at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa 2 O 4 layer between NiO and Ga 2 O 3 . First-principles defect calculations find that NiGa 2 O 4 shows low p-type intrinsic doping and hence can serve to limit electric field crowding at the interface. Vertical NiO/ Ga 2 O 3 diodes with intentionally grown 5 nm thin spinel-type NiGa 2 O 4 interfacial layers show an excellent device ON/OFF ratio of >10 10 (± 3 V), V ON of ~1.9 V, and increased breakdown voltage of ~1.2 kV for an initial unoptimized 300 lm diameter device. These p–n heterojunction diodes are promising for high-voltage, high temperature applications.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Wide Band Gap Chalcogenide Semiconductors

Wide band gap semiconductors are essential for today’s electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In–Ga–Zn–O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out because of their propensity for p-type doping, high mobilities, high valence band positions (i.e., low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (EG > 2 eV) chalcogenide materials—namely, II–VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials—and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. Then, we finally review applications—for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes—that employ wide band gap chalcogenides as either an active or passive layer. Overall, by examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this Review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Elucidating Diiodomethane-Induced Improvement in Photonically Cured MAPbI 3 Solar Cells

Diiodomethane (CH 2 I 2 ) has been reported to improve the photonically cured perovskite solar cell (PSC) device performance by reducing pinholes. Here we show that even for pinhole-free methylammonium lead iodide (MAPbI 3 ) made by photonic curing, adding CH 2 I 2 promotes significant performance improvement. We elucidate the mechanisms behind the observed improvement. In addition to current-density versus voltage measurements, we perform a wide variety of characterization to compare the crystallinity, grain structure, optical, chemical, and electrical properties of the photonically cured samples with and without CH 2 I 2 in the MAPbI 3 layer to those of thermally annealed devices. Here, the addition of CH 2 I 2 promotes grain growth in the vertical direction, increases the I/Pb ratio in the final film, and removes the I - ionic diffusion and defect signature associated with iodine interstitials. As a result, we achieve a champion efficiency of 15.04% with MAPbI 3 conversion time of 20 ms, comparable to PSCs that have MAPbI 3 layer thermally annealed for 10 min. Understanding the mechanisms behind additive-induced improvements for non-thermal annealing processes is critical to enabling high-speed PSC manufacturing.

14 SOLAR ENERGY↗
DOE OSTI2020

Effects of salinity and pH on the spectral induced polarization signals of graphite particles

The electrical property of micrometre-sized graphite particles was investigated under different particle concentration, particle size, fluid conductivity and pH conditions. Due to its large internal electronic conductivity and ability to polarize under external potential field, significant enhancement of its spectral induced polarization (SIP) responses is observed when graphite is included in sand mixtures. While a small amount of graphite inclusion significantly increases the SIP response of its mixtures with sand, further concentration increase does not necessarily lead to a proportional increase of the SIP response. This is shown to be related to the formation of graphite aggregates at higher concentrations. Changes of fluid salinity have a significant effect on graphite's SIP behaviour. This includes a positive impact on normalized chargeability and imaginary conductivity, but a negative impact on chargeability and relaxation time constant. The effect of pH on the SIP response of graphite is small but shows consistent trend, where pH increase leads to a decrease of both the chargeability and relaxation time constant. The underlying cause of this effect is not clear.

58 GEOSCIENCES↗
DOE OSTI2020

Quantifying leakage fields at ionic grain boundaries using off-axis electron holography

The electrical properties of interfaces in semiconductors and ionic conductors are immensely important in a wide range of applications. Electron holography is ideally suited for the direct measurement of the electrostatic potential of such interfaces. A key challenge with this approach is the contribution of the leakage field from the sample to the observed electron phase shift. This leakage field cannot be a priori independently determined and can cause an overestimation of the phase shift. In this work, we use finite element simulations to compute the three-dimensional electrostatic potential in the vicinity of an interface associated with a given interfacial charge density distribution. We then evaluate the predicted phase shift and demonstrate that the leakage field strongly affects the recovery of the projected interface potential. From the difference between the true potential and uncorrected, recovered potential, we propose a method to correct for this effect. We then demonstrate the application of this methodology to the analysis of experimental off-axis electron holography data acquired from the grain boundaries in lightly doped ceria.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Long-range model of vibrational autoionization in core-nonpenetrating Rydberg states of NO

In high orbital angular momentum (ℓ ≥ 3) Rydberg states, the centrifugal barrier hinders the close approach of the Rydberg electron to the ion-core. As a result, these core-nonpenetrating Rydberg states can be well described by a simplified model in which the Rydberg electron is only weakly perturbed by the long-range electric properties (i.e., multipole moments and polarizabilities) of the ion-core. We have used a long-range model to describe the vibrational autoionization dynamics of high-ℓ Rydberg states of nitric oxide (NO). In particular, our model explains the extensive angular momentum exchange between the ion-core and the Rydberg electron that had been previously observed in vibrational autoionization of f (ℓ = 3) Rydberg states. These results shed light on a long-standing mechanistic question around these previous observations and support a direct, vibrational mechanism of autoionization over an indirect, predissociation-mediated mechanism. In addition, our model correctly predicts newly measured total decay rates of g (ℓ = 4) Rydberg states because for ℓ ≥ 4, the non-radiative decay is dominated by autoionization rather than predissociation. We examine the predicted NO + ion rotational state distributions generated by vibrational autoionization of g states and discuss applications of our model to achieve quantum state selection in the production of molecular ions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Record >10 MV/cm mesa breakdown fields in Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors on native AlN substrates

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and it is demonstrated that native AlN substrates unlock the potential for Al-rich AlGaN to sustain large fields in such devices. We further study how Ohmic contacts made directly to a Si-doped channel layer reduce the knee voltage and increase the output current density. High-quality AlGaN growth is confirmed via scanning transmission electron microscopy, which also reveals the absence of metal penetration at the Ohmic contact interface and is in contrast to established GaN HEMT technology. Two-terminal mesa breakdown characteristics with 1.3 μm separation possess a record-high breakdown field strength of ~11.5 MV/cm for an undoped Al 0.6 Ga 0.4 N-channel layer. The breakdown voltages for three-terminal devices measured with gate-drain distances of 4 and 9 μm are 850 and 1500 V, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Electrostatic Dissipation in 3D-Printable Silicone

Here, in this report, we describe the incorporation of single-walled carbon nanotubes (CNTs) into 3D printable siloxane elastomers for electrostatic dissipation. The composite was characterized, focusing on how rheological and mechanical properties of the siloxane are affected at various CNT loading levels. Electrical properties were also characterized to develop materials with effective electrostatic dissipation. We demonstrate that low loadings (<1 wt %) of CNTs can be sufficiently dispersed into silicone resins that can be 3D printed, and the resulting material shows a significant improvement in electrostatic dissipation through the reduction in electrical resistivity with minimal effect on its mechanical properties.

36 MATERIALS SCIENCE↗