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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Non-Contact Thrust Stand Calibration Method for Repetitively-Pulsed Electric Thrusters

A thrust stand calibration technique for use in testing repetitively-pulsed electric thrusters for in-space propulsion has been developed and tested using a modified hanging pendulum thrust stand. In the implementation of this technique, current pulses are applied to a solenoidal coil to produce a pulsed magnetic field that acts against the magnetic field produced by a permanent magnet mounted to the thrust stand pendulum arm. The force on the magnet is applied in this non-contact manner, with the entire pulsed force transferred to the pendulum arm through a piezoelectric force transducer to provide a time-accurate force measurement. Modeling of the pendulum arm dynamics reveals that after an initial transient in thrust stand motion the quasisteady average deflection of the thrust stand arm away from the unforced or zero position can be related to the average applied force through a simple linear Hooke s law relationship. Modeling demonstrates that this technique is universally applicable except when the pulsing period is increased to the point where it approaches the period of natural thrust stand motion. Calibration data were obtained using a modified hanging pendulum thrust stand previously used for steady-state thrust measurements. Data were obtained for varying impulse bit at constant pulse frequency and for varying pulse frequency. The two data sets exhibit excellent quantitative agreement with each other as the constant relating average deflection and average thrust match within the errors on the linear regression curve fit of the data. Quantitatively, the error on the calibration coefficient is roughly 1% of the coefficient value.

Wong, Andrea R.↗
NASA NTRS1990

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

Bishop, W.↗
NASA NTRS1972

Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells

An investigation of the characteristics and behavior of 10 ohm-cm silicon cells having abnormally high open-circuit voltages was made. The cells studied were made by a new, highly simplified, contact fabrication process which creates both a contact and a thin electric field region at the cell back surface without the need for phosphorus layer removal. These cells had open-circuit voltages of about 0.58 V and their performance as a function of thickness, temperature, and 1 MeV electron irradiation is detailed. The study showed that 10 ohm-cm back-surface-field cells can have the high initial efficiencies and desirable temperature behavior of low resistivity cells. Thin back-surface-field cells were made and showed, in addition, much greater radiation damage resistance. A mechanism is proposed to explain the results.

Mandelkorn, J.↗
NASA NTRS1972

Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells.

An investigation of the characteristics and behavior of 10 ohm-cm silicon cells having abnormally high open-circuit voltages was made. The cells studied were made by a new, highly simplified, contact fabrication process which creates both a contact and a thin electric field region at the cell back surface without the need for phosphorus layer removal. These cells had open-circuit voltages of about 0.58 V and their performance as a function of thickness, temperature, and 1 MeV electron irradiation is detailed. The study showed that 10 ohm-cm back-surface-field cells can have the high initial efficiencies and desirable temperature behavior of low resistivity cells. Thin back-surface-field cells were made and showed, in addition, much greater radiation damage resistance. A mechanism is proposed to explain the results.

Mandelkorn, J.↗
NASA NTRS2007

Thermal modulation for gas chromatography

A thermal modulator device for gas chromatography and associated methods. The thermal modulator device includes a recirculating fluid cooling member, an electrically conductive capillary in direct thermal contact with the cooling member, and a power supply electrically coupled to the capillary and operable for controlled resistive heating of the capillary. The capillary can include more than one separate thermally modulated sections.

Hasselbrink, Ernest F.↗
NASA NTRS2007

Thermal modulation for gas chromatography

A thermal modulator device for gas chromatography and associated methods. The thermal modulator device includes a cooling member, an electrically conductive capillary in direct thermal contact with the cooling member, and a power supply electrically coupled to the capillary and operable for controlled resistive heating of the capillary.

Hasselbrink, Ernest F.↗
NASA NTRS1991

Thin, Lightweight Solar Cell

Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

Brandhorst, Henry W., Jr.↗
NASA NTRS2012

Fabrication of a Cryogenic Bias Filter for Ultrasensitive Focal Plane

A fabrication process has been developed for cryogenic in-line filtering for the bias and readout of ultrasensitive cryogenic bolometers for millimeter and submillimeter wavelengths. The design is a microstripline filter that cuts out, or strongly attenuates, frequencies (10 50 GHz) that can be carried by wiring staged at cryogenic temperatures. The filter must have 100-percent transmission at DC and low frequencies where the bias and readout lines will carry signal. The fabrication requires the encapsulation of superconducting wiring in a dielectric-metal envelope with precise electrical characteristics. Sufficiently thick insulation layers with high-conductivity metal layers fully surrounding a patterned superconducting wire in arrayable formats have been demonstrated. A degenerately doped silicon wafer has been chosen to provide a metallic ground plane. A metallic seed layer is patterned to enable attachment to the ground plane. Thick silicon dioxide films are deposited at low temperatures to provide tunable dielectric isolation without degrading the metallic seed layer. Superconducting wiring is deposited and patterned using microstripline filtering techniques to cut out the relevant frequencies. A low Tc superconductor is used so that it will attenuate power strongly above the gap frequency. Thick dielectric is deposited on top of the circuit, and then vias are patterned through both dielectric layers. A thick conductive film is deposited conformally over the entire circuit, except for the contact pads for the signal and bias attachments to complete the encapsulating ground plane. Filters are high-aspect- ratio rectangles, allowing close packing in one direction, while enabling the chip to feed through the wall of a copper enclosure. The chip is secured in the copper wall using a soft metal seal to make good thermal and electrical contact to the outer shield.

Chervenak, James↗
NASA NTRS1966

Electric propulsion in 1965.

Electric propulsion in 1965, discussing electron bombardment and contact ionization thrustors, nuclear and solar-electric power systems, etc

ELECTRON BOMBARDMENT↗
NASA NTRS1988

Mounting Thin Samples For Electrical Measurements

New method for mounting thin sample for electrical measurements involves use of vacuum chuck to hold a ceramic mounting plate, which holds sample. Contacts on mounting plate establish electrical connection to sample. Used to make electrical measurements over temperature range from 77 to 1,000 K and does not introduce distortions into magnetic field during Hall measurements.

Matus, L. G.↗
NASA NTRS1976

Apollo experience report: Detection and minimization of ignition hazards from water/glycol contamination of silver-clad electrical circuitry

The potential flammability hazard when a water/glycol solution contacts defectively insulated silver-clad copper circuitry or electrical components carrying a direct current is described. The chemical reactions and means for detecting them are explained. Methods for detecting and cleaning contaminated areas and the use of inhibitors to arrest chemical reactivity are also explained. Preventive measures to minimize hazards are given. Photomicrographs of the chemical reactions occurring on silver clad wires are also included.

Downs, W. R.↗
NASA NTRS1982

Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers

Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.

Botez, D.↗
NASA NTRS1981

Constricted double-heterojunction AlGaAs diode lasers - Structures and electrooptical characteristics

Constricted double-heterojunction (CDH) diode lasers are presented as a class of nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various CDH structures are discussed while treating such topics as liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers with positive-index lateral mode confinement provides single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C, while exhibiting light-current characteristics with second-harmonic distortions as low as -57 dB below the fundamental level. Semileaky guide CDH lasers with an asymmetric leaky cavity provide single-mode operation to 15-20 mW/facet CW, and to 50 mW/facet at 50% duty cycle.

Botez, D.↗
NASA NTRS1985

Study of Contact Resistances in Integrated Circuits

Techniques explored in search for rapid, reliable test. Resistances of aluminum/silicon contacts and methods to measure subjects of NASA report. Study with three tasks undertaken to evaluate nature and reliability of large numbers of semiconductor contacts of type now being fabricated in integrated circuits: Develop yield analysis for series strings of contacts using wafer-level electrical measurements, and identify different types of faults by visual inspection; develop wafer-level tests to evaluate reliability of contact strings; and develop mathematical model for current flow in contacts and examine contact region for evidence of micro-alloying.

Buehler, M. G.↗
NASA NTRS1987

Measuring Thicknesses of Wastewater Films

Sensor determines when thickness of film of electrically conductive wastewater on rotating evaporator drum exceeds preset value. Sensor simple electrical probe that makes contact with liquid surface. Made of materials resistant to chemicals in liquid. Mounted on shaft in rotating cylinder, liquid-thickness sensor extends toward cylinder wall so tip almost touches. Sensor body accommodates probe measuring temperature of evaporated water in cylinder.

Schubert, F. H.↗
NASA NTRS1989

Research and development of HgZnTe as an infrared material

Interfacial morphology and Fermi level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe have been studied using X-ray and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation, where the weak HgTe bond and consequent ease of Hg loss strongly influence semiconductor disruption and metal-semiconductor intermising. For Al/CdTe, the strong Al-Te reaction yields a significantly more extensive Al-Te reacted region than has been observed for HgCdTe. The Al/ZnTe interface is observed to be more abrupt than Al/CdTe. The final Fermi level pinning positions, Ef-Evbm for Al, Ag, and Pt on p-type CdTe and p-ZnTe have been determined. Efi is found to be roughly the same for both CdTe and ZnTe, with the value for ZnTe lying approximately 0.2 eV closer to the VBM for all three metals. From these results, one would expect Schottky barriers of about the same height for these metals on p-CdTe and p-ZnTe; and also that, in principle, metal interfaces with the two alloys HgCdTe and HgZnTe would have the same properties. Comparisons and implications for electrical behavior of metal contacts to the alloys are discussed.

Wahi, A. K.↗
NASA NTRS1989

Sequentially evaporated thin Y-Ba-Co-O superconducting films on microwave substrates

The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.

Valco, G. J.↗