SEARCH · Search NASA

Results for “ION IMPLANTATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 343 records · Page 19

All sources NASA NTRS DOE OSTI

DOE OSTI2017

Microstructural study of He{sup +}-implanted and thermally annealed silicon-on-sapphire layers

The effect of He{sup +} ion implantation and subsequent annealing on the silicon-on-sapphire microstructure is studied by transmission electron microscopy and X-ray diffraction analysis. It is established that He{sup +} ion implantation leads to the formation of defects in the Si layer and α-Al{sub 2}O{sub 3}, while subsequent annealing causes dissociation of radiation defects in Si and formation of nanopores in α-Al{sub 2}O{sub 3}. The effect of implanted-ion dose and annealing temperature on the parameters of the porous α-Al{sub 2}O{sub 3} layer and structural quality of the Si layer is investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Development of Single Photon Sources in GaN

The recent discovery of bright, room-temperature, single photon emitters in GaN leads to an appealing alternative to diamond best single photon emitters given the widespread use and technological maturity of III-nitrides for optoelectronics (e.g. blue LEDs, lasers) and high-speed, high-power electronics. This discovery opens the door to on-chip and on-demand single photon sources integrated with detectors and electronics. Currently, little is known about the underlying defect structure nor is there a sense of how such an emitter might be controllably created. A detailed understanding of the origin of the SPEs in GaN and a path to deterministically introduce them is required. In this project, we develop new experimental capabilities to then investigate single photon emission from GaN nanowires and both GAN and AlN wafers. We ion implant our wafers with the ion implanted with our focused ion beam nanoimplantation capabilities at Sandia, to go beyond typical broad beam implantation and create single photon emitting defects with nanometer precision. We've created light emitting sources using Li + and He + , but single photon emission has yet to be demonstrated. In parallel, we calculate the energy levels of defects and transition metal substitutions in GaN to gain a better understanding of the sources of single photon emission in GaN and AlN. The combined experimental and theoretical capabilities developed throughout this project will enable further investigation into the origins of single photon emission from defects in GaN, AlN, and other wide bandgap semiconductors.

36 MATERIALS SCIENCE↗

NASA NTRS1984

LEC GaAs for integrated circuit applications

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Kirkpatrick, C. G.↗

DOE OSTI2021

Unraveling the Early-Stage Ordering of Krypton Solid Bubbles in Molybdenum: A Multimodal Study

Self-organization of defects such as fission gas bubbles in materials can lead to high inventory capacity for fission gas storage and help mitigate swelling caused by fission gases in nuclear fuel materials under radiation in nuclear reactors. Here, we report the physical mechanism of self-organization of krypton (Kr) gas bubbles in molybdenum (Mo) under ion implantation. The ion fluence and temperature-dependent formation of Kr solid bubble superlattice (SBS) in Mo were investigated by using both synchrotron-based small-angle X-ray scattering (SAXS) and transmission electron microscopy (TEM). Early stage self-organization of gas bubbles is observed at a fluence of 2.5 × 10 16 ions/cm 2 at temperatures of 300–400 °C. The bubble lattice constant increases with increasing implantation temperature from 300 to 400 °C. Both experiments and atomic kinetic Monte Carlo modeling indicate that the Kr solid bubbles are weakly ordered in comparison to previously studied helium (He) gas bubble superlattice (GBS) while the lattice constant are relatively smaller for Kr SBS compared to that of He GBS. The irradiation conditions suggest that spinodal decomposition, which is a form of phase separation, probably precedes gas bubble ordering in Mo. Altogether, our work sheds light on the formation mechanism of noble gas superlattice toward the development of radiation-tolerant materials which are important for the design of advanced nuclear reactors.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Resistance to Helium Bubble Formation in Amorphous SiOC/Crystalline Fe Nanocomposite

The management of radiation defects and insoluble He atoms represent key challenges for structural materials in existing fission reactors and advanced reactor systems. To examine how crystalline/amorphous interface, together with the amorphous constituents affects radiation tolerance and He management, we studied helium bubble formation in helium ion implanted amorphous silicon oxycarbide (SiOC) and crystalline Fe composites by transmission electron microscopy (TEM). The SiOC/Fe composites were grown via magnetron sputtering with controlled length scale on a surface oxidized Si (100) substrate. These composites were subjected to 50 keV He+ implantation with ion doses chosen to produce a 5 at% peak He concentration. TEM characterization shows no sign of helium bubbles in SiOC layers nor an indication of secondary phase formation after irradiation. Compared to pure Fe films, helium bubble density in Fe layers of SiOC/Fe composite is less and it decreases as the amorphous/crystalline SiOC/Fe interface density increases. Our findings suggest that the crystalline/amorphous interface can help to mitigate helium defect generated during implantation, and therefore enhance the resistance to helium bubble formation.

36 MATERIALS SCIENCE↗

NASA NTRS2006

Domed, 40-cm-Diameter Ion Optics for an Ion Thruster

Improved accelerator and screen grids for an ion accelerator have been designed and tested in a continuing effort to increase the sustainable power and thrust at the high end of the accelerator throttling range. The accelerator and screen grids are undergoing development for intended use as NASA s Evolutionary Xenon Thruster (NEXT) a spacecraft thruster that would have an input-power throttling range of 1.2 to 6.9 kW. The improved accelerator and screen grids could also be incorporated into ion accelerators used in such industrial processes as ion implantation and ion milling. NEXT is a successor to the NASA Solar Electric Propulsion Technology Application Readiness (NSTAR) thruster - a state-of-the-art ion thruster characterized by, among other things, a beam-extraction diameter of 28 cm, a span-to-gap ratio (defined as this diameter divided by the distance between the grids) of about 430, and a rated peak input power of 2.3 kW. To enable the NEXT thruster to operate at the required higher peak power, the beam-extraction diameter was increased to 40 cm almost doubling the beam-extraction area over that of NSTAR (see figure). The span-to-gap ratio was increased to 600 to enable throttling to the low end of the required input-power range. The geometry of the apertures in the grids was selected on the basis of experience in the use of grids of similar geometry in the NSTAR thruster. Characteristics of the aperture geometry include a high open-area fraction in the screen grid to reduce discharge losses and a low open-area fraction in the accelerator grid to reduce losses of electrically neutral gas atoms or molecules. The NEXT accelerator grid was made thicker than that of the NSTAR to make more material available for erosion, thereby increasing the service life and, hence, the total impulse. The NEXT grids are made of molybdenum, which was chosen because its combination of high strength and low thermal expansion helps to minimize thermally and inertially induced deflections of the grids. A secondary reason for choosing molybdenum is the availability of a large database for this material. To keep development costs low, the NEXT grids have been fabricated by the same techniques used to fabricate the NSTAR grids. In tests, the NEXT ion optics have been found to outperform the NSTAR ion optics, as expected.

Soulas, George C.↗

DOE OSTI2017

Iron nitride permanent magnet and technique for forming iron nitride permanent magnet

A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Iron nitride permanent magnet and technique for forming iron nitride permanent magnet

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Iron nitride permanent magnet and technique for forming iron nitride permanent magnet

Wang, Jian-Ping↗

DOE OSTI2018

Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of .about.0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

47 OTHER INSTRUMENTATION↗

DOE OSTI2015

TEM investigation of the surface layer structure [111]{sub B2} of the single NiTi crystal modified by the Si-ion beam implantation

The study was carried on for the single NiTi crystals subjected to the Si-ion beam implantation. Using the transmission electron microscopy technique (TEM), the surface layer structure [111]{sub B2} was examined for the treated material. The modified near-surface sublayers were found to have different composition. Thus the uppermost sublayer contained mostly oxides; the lower-lying modified sublayer material was in an amorphous state and the thin underlying sublayer had a defect structure.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation

We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.

36 MATERIALS SCIENCE↗

NASA NTRS1980

Improved process control for VMOS FET's

Method is applied in middle of fabrication process: (a) after mask region is formed, diffused-boron region is etched; (b) etching is left incomplete for ion implantation; (c) boron ions are implanted into region to define accurately crucial geometry of V-groove; (d) groove is etched to completion, forming two well-defined diffusion regions that serve as source and drain of transistor. Remaining process is conventional.

Jhabvala, M. D.↗

DOE OSTI2019

Swelling and Helium Bubble Morphology in a Cryogenically Treated FeCrNi Alloy with Martensitic Transformation and Reversion after Helium Implantation

A cryo-quenched 70 wt % Fe-15 wt% Cr-15 wt% Ni single-crystal alloy with fcc (face centered cubic), bcc (body centered cubic), and hcp (hexagonal close packed) phases was implanted with 200 keV He+ ions up to 2 × 1017 ions·cm -2 at 773 K. Surface-relief features were observed subsequent to the He+ ion implantation, and transmission electron microscopy was used to characterize both the surface relief properties and the details of associated “swelling effects” arising cumulatively from the austenitic-to-martensitic phase transformation and helium ion-induced bubble evolution in the single-crystal ternary alloy. The bubble size in the bcc phase was found to be larger than that in the fcc phase, while the bubble density in the bcc phase was correspondingly lower. The phase boundaries with misfit dislocations formed during the martensitic transformation and reversion processes served as helium traps that dispersed the helium bubble distribution. Swelling caused by the phase transformation in the alloy was dominant compared to that caused by helium bubble formation due to the limited depth of the helium ion implantation. The detailed morphology of helium bubbles formed in the bcc, hcp, and fcc phases were compared and correlated with the characters of each phase. The helium diffusion coefficient under irradiation at 773 K in the bcc phase was much higher (i.e., by several orders of magnitude) than that in the fcc phase and led to faster bubble growth. Moreover, the misfit phase boundaries were shown to be effective sites for the diffusion of helium atoms. This feature may be considered to be a desirable property for improving the radiation tolerance of the subject, ternary alloy.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Assessing the oxidation states and structural stability of the Ce analogue of brannerite

The Ce-containing analogue of brannerite (ie, UTi2O6) was previously considered to be stoichiometric (ie, CeTi2O6); however, it has recently been determined that the material is O deficient. This oxygen-deficient material has been suggested to be charged balanced by the presence of a minor concentration of Ce3+ or by the A-site being cation deficient with the Ce oxidation state being 4+. A variety of Ti-containing oxides (including brannerite) have been investigated as potential nuclear wasteforms, and it is necessary to understand the electronic structure of a proposed nuclear wasteform material as well as how the structure responds to radiation from incorporated waste elements. The radiation resistance of a material can be simulated by ion implantation. The objective of this study was to confirm the Ce oxidation state in the cation- and oxygen-deficient material (ie, Ce0.94Ti2O6 - δ) and to determine how radiation damage affects this material. X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy were used to study Ce0.94Ti2O6 - δ before and after being implanted with 2 MeV Au- ions. Analysis of the Ce 3d XPS spectra from the as-synthesized samples by using a previously developed fitting method has unequivocally shown that Ce adopts both 4+ (major) and 3+ (minor) oxidation states, which was confirmed by examination of magnetic susceptibility data. Analysis of XPS and X-ray absorption near-edge spectroscopy spectra from ion-implanted materials showed that both Ce and Ti were reduced because of radiation damage and that the local coordination environments of the cations are greatly affected by radiation damage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2017

Surface Mechanoengineering of a Zr-based Bulk Metallic Glass via Ar-Nanobubble Doping to Probe Cell Sensitivity to Rigid Materials

In this paper, a new materials platform, utilizing the amorphous microstructure of bulk metallic glasses (BMGs) and the versatility of ion implantation, was developed for the fundamental investigation of cell responses to substrate-rigidity variations in the gigapascal modulus range, which was previously unattainable with polymeric materials. The surface rigidity of a Zr-Al- Ni-Cu-Y BMG was modulated with low-energy Ar-ion implantation owing to the impartment of Ar nanobubbles into the amorphous matrix. Surface softening was achieved due to the formation of nanobubble-doped transitional zones in the Zrbased BMG substrate. Bone-forming cell studies on this newly designed platform demonstrated that mechanical cues, accompanied with the potential effects of other surface properties (i.e. roughness, morphology, and chemistry), contributed to modulating cell behaviors. Cell adhesion and actin filaments were found to be less established on less stiff surfaces, especially on the surface with an elastic modulus of 51 GPa. Cell growth appeared to be affected by surface mechanical properties. A lower stiffness was generally related to a higher growth rate. Findings in this study broadened our fundamental understanding concerning the mechanosensing of bone cells on stiff substrates. It also suggests that surface mechano-engineering of metallic materials could be a potential strategy to promote osseointegration of such materials for bone-implant applications. Further investigations are proposed to fine tune the ion implantation variables in order to further distinguish the surface-mechanical effect on bone-forming cell activities from the contributions of other surface properties.

36 MATERIALS SCIENCE↗

NASA NTRS1993

Diffusion of Na and K in the uppermost regolith of Mercury

We examine the conditions under which ions impacting the Hermean surface can act as a regional source of enhanced atmospheric column through ion implantation and subsequent release at the surface. At most latitudes, energetic (a few keV) Na or K ions which impact the nightside surface, are released quickly (well before noon) upon warming of the surface. We show that the relative sunrise/sunset difference produced by ion implantation is ((n)(sub SR) - (n)(sub SS)/(n)(sub Ave) = f, where f is the fraction of the photo-ions recycled, (n)(sub SR) is the average zenith column above the sunrise portion of the illuminated hemisphere, (n)(sub SS) is the average zenith column in the sunset portion, and (n)(sub Ave) is the average column over the sunlit disk. Thus, to produce a large sunrise/sunset difference via ion implantation and subsequent release requires efficient (close to total) recycling. We show that the most extensive set of available data reduced to Na column abundance does not show any sunrise enhancement. We argue that the K data do not permit an unambiguous interpretation in favor of sunrise/sunset differences. We further find that if an efficient surface loss process for the alkali is not operating after sunrise, the initial Na and K distribution will relax into the bulk of the solid. Preserved abundance gradients of Na and K in lunar glasses that the Arrhenius coefficients for impact glasses are likely more modest than those for laboratory glasses derived from rock by nonimpact processes, but the effect of the more modest diffusion rates is only to delay the efficient loss of Na by a few Earth days. We argue that implantation can lead to observable regional increases in the observed Na or K column densities only if it occurs at very high latitudes, where diffusion is slow. It is typically lower energy ions which impact at high latitude and these are both more numerous than the high energy ions and possess smaller average penetration depths; thus there are additional reasons to favor a high-latitude locus for any possible prompt return related increases in zenith column. We find that we cannot rule out sputtering as a source process, as the low-energy ions are efficient sputterers. Finally, we argue that the observed Na/K ratio in the atmopshere may be the expression of their different asymptotic rates of loss from the interiors of the regolith grains. If so, this allows us to fix the importance of sputtering and photon stimulated desorption relative to impact vaporization.

Killen, R. M.↗

DOE OSTI2017

Modification of electrical properties of topological insulators

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗