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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Integrated polarization-free Bragg filters with subwavelength gratings for photonic sensing

We present polarization-free Bragg filters having subwavelength gratings (SWGs) in the lateral cladding region. This Bragg design expands modal fields toward upper cladding, resulting in enhanced light interaction with sensing analytes. Two device configurations are proposed and examined, one with index-matched coupling between transverse electric (TE) and transverse magnetic (TM) modes and the other one with hybrid-mode (HM) coupling. Both configurations introduce a strong coupling between two orthogonal modes (either TE-TM or HM 1 -HM 2 ) and rotate the polarization of the input wave through Bragg reflection. The arrangements of SWGs help to achieve two configurations with different orthogonal modes, while expanding modal profiles toward the upper cladding region. Our proposed SWG-assisted Bragg gratings with polarization independency eliminate the need for a polarization controller and effectively tailor the modal properties, enhancing the potential of integrated photonic sensing applications.

Optics↗
DOE OSTI2020

Photonic microresonator based sensor for selective nitrate ion detection

Sensing nitrate concentrations in soil with high sensitivity and selectivity using field-deployable compact sensor platforms is a sought-after goal for environment and agriculture applications. This study demonstrates a new optically based nitrate sensing platform based on ion-selective membrane (ISM) functionalized chip-scale photonic micro-ring resonators. Our approach relies upon measurements of resonance shifts in the micro-resonators and leverages the excellent, though little studied, optical properties of ISMs. Using a high-quality micro-ring resonator, a nitrate ion-selective photonic sensor exhibits a detection limit down to 0.1 parts per million (ppm) and enables nitrate concentration measurements in the 1-100 ppm level, appropriate for soil science and agriculture. Importantly, the sensor also shows high selectivity over other competing anions in soil, such as Cl - and NO 2 - . Here, we argue that this chip-scale approach can be incorporated into compact sensor platforms.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Linewidth narrowing in self-injection locked lasers: Effects of quantum confinement

This paper explores the impact of gain medium on linewidth narrowing in integrated self-injection locked III–V/SiN lasers, theoretically and experimentally. We focus on the effects of carrier densities of states in zero- and two-dimensional structures due to quantum-dot and quantum-well confinement. The theoretical approach includes (a) multimode laser interaction to treat mode competition and wave mixing, (b) quantum-optical contributions from spontaneous emission, and (c) composite laser/free-space eigenmodes to describe outcoupling and coupling among components within an extended cavity. For single-cavity lasers, such as distributed feedback lasers, the model reproduces the experimentally observed better linewidth performance of quantum-dot active regions over quantum-well ones. When applied to integrated III–V/SiN lasers, our analysis indicates Hz-level linewidth performance for both quantum-dot and quantum-well gain media due to overcoming the difference in carrier-induced refractive index by incorporating a high-Q SiN passive resonator. Trade-offs are also explored between linewidth, output power, and threshold current.

Cavity quantum electrodynamics↗
DOE OSTI2024

Diffractive optical computing in free space

Abstract Structured optical materials create new computing paradigms using photons, with transformative impact on various fields, including machine learning, computer vision, imaging, telecommunications, and sensing. This Perspective sheds light on the potential of free-space optical systems based on engineered surfaces for advancing optical computing. Manipulating light in unprecedented ways, emerging structured surfaces enable all-optical implementation of various mathematical functions and machine learning tasks. Diffractive networks, in particular, bring deep-learning principles into the design and operation of free-space optical systems to create new functionalities. Metasurfaces consisting of deeply subwavelength units are achieving exotic optical responses that provide independent control over different properties of light and can bring major advances in computational throughput and data-transfer bandwidth of free-space optical processors. Unlike integrated photonics-based optoelectronic systems that demand preprocessed inputs, free-space optical processors have direct access to all the optical degrees of freedom that carry information about an input scene/object without needing digital recovery or preprocessing of information. To realize the full potential of free-space optical computing architectures, diffractive surfaces and metasurfaces need to advance symbiotically and co-evolve in their designs, 3D fabrication/integration, cascadability, and computing accuracy to serve the needs of next-generation machine vision, computational imaging, mathematical computing, and telecommunication technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams

Short-pulse ion beams have been developed in recent years and now enable applications in materials science. A tunable flux of selected ions delivered in pulses of a few nanoseconds can affect the balance of defect formation and dynamic annealing in materials. We report results from color center formation in silicon with pulses of 900 keV protons. G-centers in silicon are near-infrared photon emitters with emerging applications as single-photon sources and for spin-photon qubit integration. G-centers consist of a pair of substitutional carbon atoms and one silicon interstitial atom and are often formed by carbon ion implantation and thermal annealing. Here, we report on G-center formation with proton pulses in silicon samples that already contained carbon, without carbon ion implantation or thermal annealing. The number of G-centers formed per proton increased when we increased the pulse intensity from 6.9 × 10 9 to 7.9 × 10 10 protons/cm 2 /pulse, demonstrating a flux effect on G-center formation efficiency. We observe a G-center ensemble linewidth of 0.1 nm (full width half maximum), narrower than previously reported. Pulsed ion beams can extend the parameter range available for fundamental studies of radiation-induced defects and the formation of color centers for spin-photon qubit applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Quantum Electrodynamics Coupled-Cluster at Scale: High-Performance Implementation for Complex Systems

Coupled-cluster theory (CC) is a highly accurate and versatile method for simulating complex interactions within quantum systems. The extension of CC theory to model mixed electron-photon processes with quantum electrodynamics (QED) has improved our capability to predict cavity-modified chemistry, a field where photons are used as cost-effective and eco-friendly alternatives to catalyze/inhibit chemical reactions. However, calculations with CC methods, even without incorporating QED effects, are often prohibitively expensive. Simulations of larger systems require scalable infrastructures that exist for traditional CC methods but not for QED-CC methods. As such, we present a GPU-enabled, high-performance, open-source implementation of the quantum electrodynamics coupled-cluster method with single and double excitations (QED-CCSD) within the ExaChem quantum chemistry software package. ExaChem relies on the Tensor Algebra for Many-body Methods (TAMM) infrastructure: a parallel heterogeneous tensor library designed to achieve scalable performance on modern heterogeneous supercomputing platforms. Furthermore, we discuss theoretical foundations, algorithmic details, and numerical benchmarks to showcase the larger systems that ExaChem can simulate and how the integration of photonic degrees-of-freedom alters their ground-state properties.

Basis sets↗
DOE OSTI2025

Telecom-to-visible quantum frequency converter on a silicon nitride chip

Quantum frequency conversion serves a key role in the realization of hybrid quantum networks by interfacing between wavelength-incompatible platforms. Here we present what is believed to be the first quantum frequency converter connecting visible and telecom domains on a silicon nitride (SiN) chip, using Bragg-scattering four-wave mixing to upconvert heralded single photons from 1260 to 698 nm, which covers a 192 THz span. We examine the noise sources in SiN and devise approaches to suppress noise photons at the source and target frequencies to enable measurements at the single-photon level. We demonstrate an on-chip conversion efficiency of 5% in photon flux and describe design modifications that can be implemented to significantly improve it. Our results pave the way for the implementation of complementary metal-oxide-semiconductor (CMOS)-compatible devices in quantum networks.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

Ground calibration plan for the Athena/X-IFU microcalorimeter spectrometer

The X-ray Integral Field Unit is the X-ray imaging spectrometer on board one of ESA’s next large missions, Athena. Athena is set to investigate the theme of the Hot and Energetic Universe, with a launch planned in the late-2030s. Based on a high-sensitivity transition edge sensor (TES) detector array operated at very low temperature (50 mK), X-IFU will provide spatially resolved high-resolution spectroscopy of the X-ray sky in the 0.2 to 12 keV energy band, with an energy resolution goal of 4 eV up to 7 keV [3 eV design goal]. This work presents the current calibration plan of the X-IFU. It provides the requirements applicable to the X-IFU calibration, describes the overall calibration strategy, and details the procedure and sources needed for the ground calibration of each parameter or characteristics of the X-IFU.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Designs for scalable construction of hybrid quantum photonic cavities

Nanophotonic resonators are central to numerous applications, from efficient spin–photon interfaces to laser oscillators and precision sensing. A leading approach consists of photonic crystal (PhC) cavities, which have been realized in a wide range of dielectric materials. However, translating proof-of-concept devices into a functional system entails a number of additional challenges, inspiring new approaches that combine resonators with wavelength-scale confinement and high quality factors; scalable integration with integrated circuits and photonic circuits; electrical or mechanical cavity tuning; and, in many cases, a need for heterogeneous integration with functional materials such as III–V semiconductors or diamond color centers for spin–photon interfaces. Here we introduce a concept that generates a finely tunable PhC cavity at a selected wavelength between two heterogeneous optical materials whose properties satisfy the above requirements. The cavity is formed by stamping a hard-to-process material with simple waveguide geometries on top of an easy-to-process material consisting of dielectric grating mirrors and active tuning capability. We simulate our concept for the particularly challenging design problem of multiplexed quantum repeaters based on arrays of cavity-coupled diamond color centers, achieving theoretically calculated unloaded quality factors of 106, mode volumes as small as 1.2(λ/neff)3, and maintaining >60% total on-chip collection efficiency of fluorescent photons. We further introduce a method of low-power piezoelectric tuning of these hybrid diamond cavities, simulating optical resonance shifts up to ∼760 GHz and color center fluorescence tuning of 5 GHz independent of cavity tuning. These results will motivate integrated photonic cavities toward larger scale systems-compatible designs.

Greenspon, Andrew S. (ORCID:0000000296317568)↗
DOE OSTI2020

Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Epitaxially integrated III–V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect-tolerant InAs quantum dot (QD)-based lasers. Despite being below the critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III–V layers and silicon and (2) mechanical hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed “misfit dislocation trapping layer,” we leverage these mechanical hardening effects to our advantage, displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trapping layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trapping layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Overall, our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trapping layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nonlinear Dispersion Relation and Out‐of‐Plane Second Harmonic Generation in MoSSe and WSSe Janus Monolayers

Janus transition metal dichalcogenides are an emerging class of atomically thin materials with engineered broken mirror symmetry that gives rise to long‐lived dipolar excitons, Rashba splitting, and topologically protected solitons. They hold great promise as a versatile nonlinear optical platform due to their broadband harmonic generation tunability, ease of integration on photonic structures, and nonlinearities beyond the basal crystal plane. Here, second and third harmonic generation in MoSSe and WSSe Janus monolayers is studied. Polarization‐resolved spectroscopy is used to map the full second‐order susceptibility tensor of MoSSe, including its out‐of‐plane components. In addition, the effective third‐order susceptibility and the second‐order nonlinear dispersion close to exciton resonances for both MoSSe and WSSe are measured at room and cryogenic temperatures. This work sets a bedrock for understanding the nonlinear optical properties of Janus transition metal dichalcogenides and probing their use in the next‐generation on‐chip multifaceted photonic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nonlinear Loss Engineering in Near‐Zero‐Index Bulk Materials

Transparent conducting oxides (TCOs) show unprecedented optical nonlinearities in the near infrared wavelength range, where the real part of their linear refractive index approaches zero. More specifically, the Kerr nonlinearities of these materials have sparked widespread attention due to their magnitude and speed. However, due to the absorptive nature of these nonlinear processes, it is of fundamental interest to further investigate the imaginary component of the nonlinear index. The present work studies the nonlinear optical absorption properties of aluminium‐doped zinc oxide (AZO) thin films in their near‐zero‐index (NZI) spectral window. It is found that the imaginary part of the refractive index is reduced under optical excitation such that the field penetration depth more than doubles. An optically induced shift of the NZI bandwidth of ≈120 nm for a pump intensity of 1.3 TW cm −2 is also demonstrated. Looking into the optically induced spectral redistribution of the probe signal, local net gain is recorded, which is ascribed to a nonlinear adiabatic energy transfer. The present study adds key information about the fundamental interplay between real and imaginary nonlinear indices in NZI media, while advancing parametric amplification as viable direction for loss compensation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

Extensive research efforts of strained germanium (Ge) are currently underway due to its unique properties, namely, (i) possibility of band gap and strain engineering to achieve a direct band gap, thus exhibiting superior radiative properties, and (ii) higher electron and hole mobilities than Si for upcoming technology nodes. Realizing lasing structures is vital to leveraging the benefits of tensile-strained Ge (ε-Ge). Here, we use a combination of different analytical tools to elucidate the effect of the underlying InGaAs/InAlAs and InGaAs overlaying heterostructures on the material quality and strain state of ε-Ge grown by molecular beam epitaxy. Using X-ray analysis, we show the constancy of tensile strain in sub-50 nm ε-Ge in a quantum-well (QW) heterostructure. Further, effective carrier lifetime using photoconductive decay as a function of buffer type exhibited a high (low) defect-limited carrier lifetime of ~68 ns (~13 ns) in 0.61% (0.66%) ε-Ge grown on an InGaAs (InAlAs) buffer. These results correspond well with the measured surface roughness of 1.289 nm (6.303 nm), consistent with the surface effect of the ε-Ge/III–V heterointerface. Furthermore, a reasonably high effective lifetime of ~78 ns is demonstrated in a QW of ~30 nm 1.6% ε-Ge, a moderate reduction from ~99 ns in uncapped ε-Ge, alluding to the surface effect of the overlying heterointerface. Thus, the above results highlight the prime quality of ε-Ge that can be achieved via III–V heteroepitaxy and paves a path for integrated Ge photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Efficient bidirectional quantum frequency conversion between telecom and visible bands using adaptively phase-matched III-V nanophotonic waveguides

Quantum frequency conversion (QFC) is essential for interfacing quantum systems operating at different wavelengths and for realizing scalable quantum networks. Despite extensive progress, achieving QFC with simultaneous high efficiency, low pump power, minimal noise, broad bandwidth, and pump-wavelength flexibility remains challenging. Here, we demonstrate efficient, low-noise, and bidirectional QFC between the telecom (1550-nm) and visible (780-nm) bands using unpoled indium gallium phosphide (InGaP) χ (2) nanophotonic waveguides, eliminating the need for a long-wavelength pump. Leveraging the large nonlinear susceptibility of InGaP together with adaptive phase-matching control, we obtain 27% (55%) internal efficiency in a 6-mm (2.5-mm)-long waveguide with a low pump power of 20 mW (50 mW) and a noise flux spectral density of 10 −4 counts per second per hertz at signal–pump detuning of 20 nm. These results mark a significant advance in integrated nonlinear photonics for high-performance QFC, facilitating the development of versatile and scalable quantum networks.

Hu, Jierui [Univ. of Illinois at Urbana-Champaign,↗
DOE OSTI2023

Electrically driven amplified spontaneous emission from colloidal quantum dots

Colloidal quantum dots (QDs) are attractive materials for realizing solution-processable laser diodes that could benefit from size-controlled emission wavelengths, low optical-gain thresholds and ease of integration with photonic and electronic circuits. However, the implementation of such devices has been hampered by fast Auger recombination of gain-active multicarrier states, poor stability of QD films at high current densities and the difficulty to obtain net optical gain in a complex device stack wherein a thin electroluminescent QD layer is combined with optically lossy charge-conducting layers. Here we resolve these challenges and achieve amplified spontaneous emission (ASE) from electrically pumped colloidal QDs. The developed devices use compact, continuously graded QDs with suppressed Auger recombination incorporated into a pulsed, high-current-density charge-injection structure supplemented by a low-loss photonic waveguide. These colloidal QD ASE diodes exhibit strong, broadband optical gain and demonstrate bright edge emission with instantaneous power of up to 170 μW.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Fast and efficient Sb-based type-II phototransistors integrated on silicon

Increasing the energy efficiency and reducing the footprint of on-chip photodetectors enable dense optical interconnects for emerging computational and sensing applications. While heterojunction phototransistors (HPTs) exhibit high energy efficiency and negligible excess noise factor, their gain-bandwidth product (GBP) has been inferior to that of avalanche photodiodes at low optical powers. Here, we demonstrate that utilizing type-II energy band alignment in an Sb-based HPT results in six times smaller junction capacitance per unit area and a significantly higher GBP at low optical powers. These type-II HPTs were scaled down to 2 μm in diameter and fully integrated with photonic waveguides on silicon. Thanks to their extremely low dark current and high internal gain, these devices exhibit a GBP similar to the best avalanche devices (∼270 GHz) but with one order of magnitude better energy efficiency. Their energy consumption is about 5 fJ/bit at 3.2 Gbps, with an error rate below 10−9 at −25 dBm optical power at 1550 nm. These features suggest new opportunities for creating highly efficient and compact optical receivers based on phototransistors with type-II band alignment.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Hybrid MEMS-CMOS ion traps for NISQ computing

Surging interest in engineering quantum computers has stimulated significant and focused research on technologies needed to make them manufacturable and scalable. In the ion trap realm this has led to a transition from bulk three-dimensional macro-scale traps to chip-based ion traps and included important demonstrations of passive and active electronics, waveguides, detectors, and other integrated components. At the same time as these technologies are being developed the system sizes are demanding more ions to run noisy intermediate scale quantum (NISQ) algorithms, growing from around ten ions today to potentially a hundred or more in the near future. To realize the size and features needed for this growth, the geometric and material design space of microfabricated ion traps must expand. In this paper we describe present limitations and the approaches needed to overcome them, including how geometric complexity drives the number of metal levels, why routing congestion affects the size and location of shunting capacitors, and how RF power dissipation can limit the size of the trap array. Finally, we also give recommendations for future research needed to accommodate the demands of NISQ scale ion traps that are integrated with additional technologies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Interfacial electronic states of misfit heterostructure between hexagonal ZnO and cubic NiO

The combination of materials with dissimilar symmetries can induce a large amount of stress at the interfacial layer of films, thereby promoting the appearance of novel properties in related devices. The study of the interfacial state is critical for determining the inner mechanism. In this work, the misfit heterostructure between cubic NiO films and wurtzite ZnO is investigated. A NiO film grown using molecular beam epitaxy on a ZnO substrate shows a highly (100)-oriented texture featuring three domains with a rotation angle of 30°, which is in agreement with first principles calculations. Misfit-induced dislocations and lattice distortions within the interfacial layers of the NiO film give rise to interfacial electronic states, which are different from those in bulk; these electronic states are analyzed by in situ synchrotron-based x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, x-ray absorption spectroscopy, and ex situ electron energy loss spectroscopy. Additionally, the origin of these interfacial states is discussed. This work aims to provide insights for the integration of semiconducting hexagonal ZnO with other functional materials that have a cubic symmetry. Additionally, we investigate the integration of photon and electron-based techniques to explore the interfacial states of complex interfaces, which is an important aspect of material science.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗