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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Quantum Efficiency↗
NASA NTRS2013

A Green's Function Approach to Simulate DNA Damage by the Indirect Effect

The DNA damage is of fundamental importance in the understanding of the effects of ionizing radiation. DNA is damaged by the direct effect of radiation (e.g. direct ionization) and by indirect effect (e.g. damage by.OH radicals created by the radiolysis of water). Despite years of research, many questions on the DNA damage by ionizing radiation remains. In the recent years, the Green's functions of the diffusion equation (GFDE) have been used extensively in biochemistry [1], notably to simulate biochemical networks in time and space [2]. In our future work on DNA damage, we wish to use an approach based on the GFDE to refine existing models on the indirect effect of ionizing radiation on DNA. To do so, we will use the code RITRACKS [3] developed at the NASA Johnson Space Center to simulate the radiation track structure and calculate the position of radiolytic species after irradiation. We have also recently developed an efficient Monte‐Carlo sampling algorithm for the GFDE of reversible reactions with an intermediate state [4], which can be modified and adapted to simulate DNA damage by free radicals. To do so, we will use the known reaction rate constants between radicals (OH, eaq, H,...) and the DNA bases, sugars and phosphates and use the sampling algorithms to simulate the diffusion of free radicals and chemical reactions with DNA. These techniques should help the understanding of the contribution of the indirect effect in the formation of DNA damage and double‐strand breaks.

Plante, Ianik↗
NASA NTRS1979

Annealing of radiation damage in 0.1- and 2-ohm-centimeter Silicon solar cells

Isochronal and isothermal annealing studies were conducted on 0.1 and 2 ohm centimeter n(+)/p silicon cells after irradiation by 1 MeV electrons at fluences of 10 to the 14th power, 5 times 10 to the 14th power, and 10 to the 15th power per square centimeter. For the 0.1 ohm centimeter cells, reverse annealing was not observed in the isochronal data. However, reverse annealing was observed between approximately 200 and 325 C in the isochronal data of the 2 ohm centimeter cells. Isothermal annealing of 0.1 ohm centimeter cells at 500 C restored pre-irradiation maximum power P sub max within 20 minutes at fluence = 10 to the 14th power, in 180 minutes at fluence = 5 times 10 to the 14th power and to 92 percent of pre-irradiation P sub max in 180 minutes for fluence = 10 to the 15th power. Annealing at 450 C was found inadequate to restore 0.1 ohm centimeter cell performance within reasonable times for all fluence levels. By comparison, at 450 C, the P sub max of 2 ohm centimeter cells was restored within 45 minutes, for the two highest fluence levels, while for the lowest fluence, restoration was completed within 15 minutes. Spectral response data indicate that, for both resistivities, degradation occurs predominantly in the cells p-type base region.

Weinberg, I.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55, to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of CMOS and P-MOS devices shielded in front over 2 pi steradian by flat slabs of aluminum of 40, 80, 150, and 300 mils (1.02, 2.04, 3.81, and 7.62 mm) thicknesses, and by a practically infinite shield in the back. Initial results from the CREM experiment are reported. Predictions of radiation damage to CMOS devices are based on standard environment models and computational techniques. Measured space damage is smaller than predicted by about a factor of 2-3 for thin shields but agrees well with predictions for thicker shields. It is not clear at this time how the trapped particle environment models or the computational methods should be modified in order to achieve better agreement between experimental results and predicted damage curves.

Cliff, R. A.↗
NASA NTRSDate not supplied

Influences of Solar Irradiation and Aerosol Surface Area on Nitrous Acid Production in Western U.S. Wildfire Smoke

Biomass burning has been identified as a primary emission source for a host of gas and aerosol phase compounds which can damage environmental and human health. During FIREX-AQ collaborators from UNH, NASA Langley Aerosol Research Group Experiment (LARGE), and Brown University conducted measurements out of NASA Langley’s mobile laboratory during July and August of 2019. Nitrous acid (HONO) and nitric acid (HNO3) concentrations were measured at nominal 5-minute resolution using a dual mist chamber-ion chromatograph system resulting in approximately 1,200 total samples from five separate fires in the western US. Enhancement ratios between PM2.5 and carbon monoxide were used to discriminate between young and aged smoke plumes. Average HONO concentrations were significantly higher (P << 0.01) in young daytime compared to nighttime smoke while no statistical differences (P > 0.05) were observed between young and aged smoke during day or night. In daytime smoke from the Williams Flats fire (75 km SE of Spokane, WA on the Columbia River) UV-A irradiation was highly correlated with HONO to nitrogen dioxide (NO2) ratios; indicating that heterogenous NO2 to HONO conversion more than compensated for rapid photolytic loss of HONO. Black carbon (BC) may serve as a stable proxy for total available aerosol surface area in biomass burning plumes when total aerosol size distributions are unavailable. During the day HONO/NO2 is weakly correlated to BC when BC abundance exceeds 1 ug/m3 but at lower BC concentrations the relationship breaks down. At night this relationship was stronger, partly due to consistently high BC concentrations. These observations suggest that heterogenous conversion of NO2 to HONO on aerosol is a significant source of HONO in dense smoke plumes. In more diffuse smoke conversion on other surfaces (soil, foliage) becomes more important.

J. H. Kaspari↗
NASA NTRS1971

Radiation damage in MOS integrated circuits, Part 1

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

Danchenko, V.↗
NASA NTRS1984

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1986

Lithium-Counterdoped Solar Cells

Resistance to damage by energetic electrons increased. Lithiumcounterdoped cells produce more output power than presently-used, conventional n + p silicon cells, after irradiation by MeV electrons. In addition to possessing increased radiation resistance, lithium-counterdoped silicon solar cells show significant performance restoration when annealed at temperature of 100 degrees C. Performances compared after irradiation with 1-MeV electrons. Lithium-counterdoped solar cell offers potential for in situ annealing in space. Process increases electrical power available from solar-cell array during use in space missions subject to degrading particulate environment of space.

Weinberg, I.↗
NASA NTRS1990

Proton radiation effects on multi-pinned-phased CCDs

Three Tektronix 1024 x 1024 multi-pinned-phased (MPP) charge coupled devices were irradiated with protons to obtain data on CCD performance degradation in a proton radiation environment. The devices were irradiated with a spectrum of energies up to 120 MeV, simulating the total radiation dose of a long-term space experiment. Basic parameters such as charge transfer efficiency, dark current, noise, and full well were measured before and after irradiation. A test was also performed to determine the effectiveness of various thicknesses of tantalum shielding in protecting the CCD from damage. Dark current increase and CTE degradation were the most noticeable effects of proton radiation. This paper will present the objectives, test data, and conclusions of the proton testing, and will identify future testing to be performed.

Murata-Seawalt, D.↗
NASA NTRS1994

Mutational effects of space flight on Zea mays seeds

The growth and development of more than 500 Zea mays seeds flown on Long Duration Exposure Facility (LDEF) were studied. Somatic mutations, including white-yellow stripes on leaves, dwarfing, change of leaf sheath color or seedling color were observed in plants developed from these seeds. When the frequency of white-yellow formation was used as the endpoint and compared with data from ground based studies, the dose to which maize seeds might be exposed during the flight was estimated to be equivalent to 635 cGy of gamma rays. Seeds from one particular holder gave a high mutation frequency and a wide mutation spectrum. White-yellow stripes on leaves were also found in some of the inbred progenies from plants displayed somatic mutation. Electron microscopy studies showed that the damage of chloroplast development in the white-yellow stripe on leaves was similar between seeds flown on LDEF and that irradiated by accelerated heavy ions on ground.

Mei, M.↗
NASA NTRS1997

Radiation-induced chromosomal instability in BALB/c and C57BL/6 mice: the difference is as clear as black and white

Genomic instability has been proposed to be the earliest step in radiation-induced tumorigenesis. It follows from this hypothesis that individuals highly susceptible to induction of tumors by radiation should exhibit enhanced radiation-induced instability. BALB/c white mice are considerably more sensitive to radiation-induced mammary cancer than C57BL/6 black mice. In this study, primary mammary epithelial cell cultures from these two strains were examined for the "delayed" appearance of chromosomal aberrations after exposure to 137Cs gamma radiation, as a measure of radiation-induced genomic instability. As expected, actively dividing cultures from both strains showed a rapid decline of initial asymmetrical aberrations with time postirradiation. However, after 16 population doublings, cells from BALB/c mice exhibited a marked increase in the frequency of chromatid-type breaks and gaps which remained elevated throughout the time course of the experiment (28 doublings). No such effect was observed for the cells of C57BL/6 mice; after the rapid clearance of initial aberrations, the frequency of chromatid-type aberrations in the irradiated population remained at or near those of nonirradiated controls. These results demonstrate a correlation between the latent expression of chromosomal damage in vitro and susceptibility for mammary tumors, and provide further support for the central role of radiation-induced instability in the process of tumorigenesis.

NASA Discipline Radiation Health↗
NASA NTRS2007

Chromosome Model reveals Dynamic Redistribution of DNA Damage into Nuclear Sub-domains

Several proteins involved in the response to DNA double strand breaks (DSB) form microscopically visible nuclear domains, or foci, after exposure to ionizing radiation. Radiation-induced foci (RIF) are believed to be located where DNA damage is induced. To test this assumption, we analyzed the spatial distribution of 53BP1, phosphorylated ATM and gammaH2AX RIF in cells irradiated with high linear energy transfer (LET) radiation. Since energy is randomly deposited along high-LET particle paths, RIF along these paths should also be randomly distributed. The probability to induce DSB can be derived from DNA fragment data measured experimentally by pulsed-field gel electrophoresis. We used this probability in Monte Carlo simulations to predict DSB locations in synthetic nuclei geometrically described by a complete set of human chromosomes, taking into account microscope optics from real experiments. As expected, simulations produced DNA-weighted random (Poisson) distributions. In contrast, the distributions of RIF obtained as early as 5 min after exposure to high LET (1 GeV/amu Fe) were non-random. This deviation from the expected DNA-weighted random pattern can be further characterized by relative DNA image measurements. This novel imaging approach shows that RIF were located preferentially at the interface between high and low DNA density regions, and were more frequent in regions with lower density DNA than predicted. This deviation from random behavior was more pronounced within the first 5 min following irradiation for phosphorylated ATM RIF, while gammaH2AX and 53BP1 RIF showed very pronounced deviation up to 30 min after exposure. These data suggest the existence of repair centers in mammalian epithelial cells. These centers would be nuclear sub-domains where DNA lesions would be collected for more efficient repair.

Costes, Sylvain V.↗
NASA NTRS2023

The Nature of Insoluble Organic Matter in Sutter’s Mill and Murchison Carbonaceous Chondrites: Testing the Effect of X-ray Computed Tomography (XCT) and Exploring Parent Body Organic Molecular Evolution

This study analyzed samples of the Murchison and Sutter’s Mill carbonaceous chondrite meteorites in support of the future analysis of samples returned from the asteroid (10155) Bennu by the OSIRIS-REx (Origins, Spectral Interpretation, Resource Identification, and Security–Regolith Explorer) mission. Focusing specifically on the insoluble organic matter (IOM), this study establishes that a total of 1.3 g of bulk sample from a single chondritic meteorite is sufficient to obtain a wide range of cosmochemical information, including light element analysis (H, C, and N), isotopic analysis (D/H, 13 C/ 12 C, and 15 N/ 14 N), and X-ray fluorescence spectroscopy for major elemental abundances. IOM isolated from the bulk meteorite samples was analyzed by light element and isotopic analysis as described above, 1 H and 13 C solid-state nuclear magnetic resonance spectroscopy, Raman spectroscopy, and complete noble gas analyses (abundances and isotopes). The samples studied included a pair from Murchison (CM2), one of which had been irradiated with high-energy X-rays in the course of computed tomographic imaging. No differences between the irradiated and non-irradiated Murchison samples were observed in the many different chemical and spectroscopic analyses, indicating that any X-ray–derived sample damage is below levels of detection. Elemental, isotopic, and molecular spectroscopic data derived from IOM isolated from the Sutter’s Mill sample reveals evidence that this meteorite falls into the class of heated CM chondrites.

planetary science↗
NASA NTRS1989

The role of repair in the survival of mammalian cells from heavy ion irradiation - Approximation to the ideal case of target theory

Experiments are discussed in which the cell-cycle dependency of the repair deficiency of the S/S variant of the L5178Y murine leukemic lymphoblast was examined by treatment with the heavy ions, Ne-20, Si-28, Ar-40, Fe-56, and Nb-93. Evidence from those studies provide support for the notion that as the linear energy transfer of the incident radiation increases the ability of the S/S cell to repair radiation damage decreases until it is eliminated around 500 keV/micron. In the region of the latter linear energy transfer value, the behavior of the S/S cell approximates the ideal case of target theory where post-irradiation metabolism does not influence cell survival.

Lett, J. T.↗
NASA NTRS2020

Proton Radiation Effects on HgCdTe Avalanche Photodiode Detectors

Space radiation damage and proton induced transient effects were evaluated on 4.4 μm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 μs.

Xiaoli Sun↗
NASA NTRS1994

DNA-DSB in CHO-K1 cells induced by heavy-ions: Break rejoining and residual damage (GSI)

DNA double strand breaks (DSB's) are the critical lesions involved in cellular effects of ionizing radiation. Therefore, the evaluation of DSB induction in mammalian cells after heavy ion irradiation is an essential task for the assessment of high-LET radiation risk in space. Of particular interest has been the question of how the biological efficiency for the cellular inactivation endpoint relates to the initial lesions (DSBs) at varying LETs. For cell killing, an increased Relative Biological Efficiency (RBE) has been determined for highLET radiation around 100-200 keV/mu m. At higher LET, the RBE's decrease again to values below one for the very heavy particles. At GSI, DSB-induction was measured in CHO-K1 cells following irradiation with accelerated particles covering a wide LET range. The electrophoretic elution of fragmented DNA out of agarose plugs in a constant electrical field was applied for the detection of DSB's. The fraction of DNA retained was determined considering the relative intensities of ethidium bromide fluorescence in the well and in the gel lane. Dose-effect curves were established, from which the RBE for DSB induction was calculated at a fraction of 0.7 of DNA retained In summary, these rejoining studies are in line with an enhanced severity of the DNA DSB's at higher LET's, resulting in a decreased repairability of the induced lesions. However, no information concerning the fidelity of strand breaks rejoining is provided in these studies. To assess correct rejoining of DNA fragments an experimental system involving individual DNA hybridization bands has been set up. In preliminary experiments Sal I generated DNA fragments of 0.9 Mbp were irradiated with xrays and incubated for repair However, restitution of the original signals was not observed, probably due to the high radiation dose necessary for breakage of a fragment of this size. A banding pattern with NotI hybridization signals in a higher MW range (3Mbp) has been obtained by varying the electrophoretic conditions and correct rejoining studies will be further developed in this system.

Taucher-Scholz, G.↗
NASA NTRS1977

Annual Conference on Nuclear and Space Radiation Effects, 14th, College of William and Mary, Williamsburg, Va., July 12-15, 1977, Proceedings

Topics related to processing and hardness assurance are considered, taking into account the radiation hardening of CMOS technologies, technological advances in the manufacture of radiation-hardened CMOS integrated circuits, CMOS hardness assurance through process controls and optimized design procedures, the application of operational amplifiers to hardened systems, a hard off-the-shelf SG1524 pulse width modulator, and the gamma-induced voltage breakdown anomaly in a Schottky diode. Basic mechanisms are examined, giving attention to chemical and structural aspects of the irradiation behavior of SiO2 films on silicon, experimental observations of the chemistry of the SiO2/Si interface, leakage current phenomena in irradiated SOS devices, the avalanche injection of holes into SiO2, the low-temperature radiation response of Al2O3 gate insulators, and neutron damage mechanisms in silicon at 10 K. Other subjects discussed are related to radiation effects in devices and circuits, space radiation effects, and aspects of simulation, energy deposition, and dosimetry.

Stahl, R. H.↗
NASA NTRS1979

High energy proton radiation damage to (AlGa)As-G aAs solar cells

Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV of proton irradiation. The results showed that the GaAs cells degrade considerably less than do conventional and developmental K7 silicon cells. The detailed characteristics of the GaAs and silicon cells, both before and after irradiation, are described. Further optimization of the GaAs cells seems feasible, and areas for future work are suggested.

Loo, R.↗