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At least 343 records · Page 19

Possible effects of volcanic eruptions on stratospheric minor constituent chemistry

Although stratosphere penetrating volcanic eruptions have been infrequent during the last half century, periods have existed in the last several hundred years when such eruptions were significantly more frequent. Several mechanisms exist for these injections to affect stratospheric minor constituent chemistry, both on the long-term average and for short-term perturbations. These mechanisms are reviewed and, because of the sensitivity of current models of stratospheric ozone to chlorine perturbations, quantitative estimates are made of chlorine injection rates. It is found that, if chlorine makes up as much as 0.5 to 1% of the gases released and if the total gases released are about the same magnitude as the fine ash, then a major stratosphere penetrating eruption could deplete the ozone column by several percent. The estimate for the Agung eruption of 1963 is just under 1% an amount not excluded by the ozone record but complicated by the peak in atmospheric nuclear explosions at about the same time.

Stolarski, R. S.↗

Minor constituents in the stratosphere and mesosphere

A review of the research in minor constituents in the stratosphere and mesosphere, carried out between 1975 and 1978, is presented. Much of the theoretical research was done with the aid of one-dimensional models. Different aspects of these models are discussed. Measurements of the chlorofluoromethanes, hydrochloric acid, nitric oxide, nitrous oxide, and hydrogen oxide were conducted. It is noted that the hydrogen oxides are now assuming a larger role in stratospheric photochemistry than have been postulated before. The effect of water vapor and the hydrogen oxides on the overall chemistry of the stratosphere was investigated theoretically, along with the possible relationship between solar activity and atmospheric ozone. The mesosphere study included ozone, water vapor, nitric oxide, and odd nitrogen investigations.

Hudson, R. D.↗

Improving MOS minority-carrier lifetime

Fluorine implantation increases minority-carrier lifetime in silicon by factor of 100, enhancing power efficiency in MOS applications. Implantation does not increase microdefects at silicon surface when thin oxide layers are grown, and process gathers existing impurities near surface without adversely affecting MOS electrical parameters. With these advantages, fluorine may be left on wafer surfaces after processing.

Cockrum, R. H.↗

The determination of transport parameters of minority carriers in n-p junctions by means of an electron microscope - Critique of recent developments

It has recently been shown that amplitude modulated electron beams provide a novel means for the determination of minority carrier lifetimes, diffusion lengths, etc., in n-p junctions. In this paper it is shown that: (1) a recently published analysis based on a cylindrically symmetric configuration is incorrect, (2) the correct approach leads to a system of dual integral equations for which the formal solution is given, (3) in general, the short circuit current can only be determined by means of extensive computer calculations except in the case of large front surface recombination velocities, and (4) the difficulties encountered with cylindrically symmetric configurations (circular ohmic contacts and the like) are completely avoided with a choice of a planar geometry since simple closed form expressions for the short circuit current are readily available in this case.

Von Roos, O.↗

Families of minor planets

Physical studies of individual family members show that at least the Themis, Eos, Koronis, Nysa/Hertha, and Budrosa families of minor planets are the result of the breakup of discrete parent bodies. Only a few families have been studied in detail, and even in those few cases, the full force of observational techniques has not been applied. Crucial for the understanding of families and their parent bodies are detailed physical studies of family members; precise mineralogical interpretation of observational data to identify the geochemistry of the parent bodies; and studies of the collisional evolution of family members.

Gradie, J. C.↗

The effect of minority carrier mobility variations on solar cell spectral response

Analysis of multistep diffused, high voltage 0.1 ohm-cm solar cells suggests that the increased voltage capability of these cells is correlated with localized variations in the base minority carrier mobility. An attempt to calculate the behavior of those cells revealed unexpected results. It is shown, contrary to what was expected, that spatial variations in the mobility effects severe changes in the short-circuit current and the spectral response. Variations in cell output as a result of imposing abrupt, linear, and exponential mobility variations are presented.

Weizer, V. G.↗

The remaining large minor planets with unknown rotational properties - 31 Euphrosyne and 65 Cybele

Photoelectric photometry results are presented for 31 Euphrosyne and 65 Cybele. The rational properties of the asteroids were found to be quite similar, both in period and maximum amplitude. Evidence was found for an opposition effect for 65 Cybele. The B-V and U-B colors were determined to be plus 0.67 and plus 0.30 for 31 Euphrosyne, plus 0.73 and plus 0.23 for 65 Cybele. Recent observations of 65 Cybele occulting a star have shown evidence of a possible satellite for this minor planet.

Schober, H. J.↗

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

Dumas, K. A.↗

Method of increasing minority carrier lifetime in silicon web or the like

A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers is achieved by processing the web in an atmosphere of a selected gas, e.g., oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900 to 1200 C.

Liu, J. K.↗

Minority carrier diffusion length measurements - A review and comparison of techniques

A review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Limits of applicability are indicated for each method, as relevant to indirect bandgap materials such as silicon, and direct bandgap materials like gallium arsenide. A discussion and bibliography is presented for the following techniques: uniform generation, electron beam induced current, Schottky barrier (and other steady-state) photocurrent, surface photovoltage, transient decay, and luminescence.

Khan, A. A.↗

Numerical studies of major and minor stratospheric warmings caused by orographic forcing

A primitive equation spectral model using spherical harmonics is formulated to study dynamic interactions between the troposphere and stratosphere in association with sudden stratospheric warmings. Using sigma coordinates for five tropospheric layers and log-pressure coordinates for 26 stratospheric and mesospheric layers, separate model equations for each system are combined to form single matrix governing equations. The gradual introduction of large scale topography to balanced initial states representative of observed mean winter conditions in the Northern Hemisphere is used for the generation of planetary waves during 40-day time integrations. Results of these integrations indicate that stratospheric warmings can be simulated by this orographic forcing and that mean momentum flux divergence due to zonal mean motion appears to be an essential mechanism of these simulated sudden warmings. It was found that the strength of the polar night jet can be a determining factor whether a warming becomes 'major' or 'minor'.

Koermer, J. P.↗

The photochemical time constants of minor constituents and their families in the middle atmosphere

A comprehensive formula is worked out for the photochemical time constant of minor constituents in the middle atmosphere. The formula is particularly useful for evaluating the time constants for families of some chemical species that are strongly coupled by rapid exchange reactions. Height profiles of photochemical time constants are calculated for individual species and their families based on the chemical reaction rate constants recommended in the recent WMO and JPL reports. Potential exchange reactions among various family members are discussed, and the effects of the choice of family membership on the time constant are evaluated.

Shimazaki, T.↗

Minor-element signature of relic olivine grains in deep-sea particles - A match with forsterites from C2 meteorites

The results of high-precision electron microprobe analyses on relic forsterites in 13 different deep sea particles (DSP) are described, comparing their 'minor' element (Mn, Cr, Ca, Ti, Al) signatures with those of olivines found in several types of meteorites. The results show that the DSP olivines do not match those from terrestrial and lunar rocks and achondritic meteoroties, match poorly those of the carbonaceous Allende (CV3) and Orgeuil (CI) meteorites, but are well matched with olivines from C2 meteorites, including the unusual Belgica 7904 meteorite.

Steele, I. M.↗

The determination of minority carrier lifetimes in direct band-gap semiconductors by monitoring intensity-modulated luminescence radiation

When an extrinsic, direct band-gap semiconductor sample is irradiated by photons of an energy higher than the energy of the band gap between valence and conduction bands, excess electron-hole pairs are generated which, while diffusing through the sample, produce luminescence via radiative recombination. If, furthermore, the intensity of the impinging beam of photons is modulated sinusoidally, the luminescence radiation escaping from the sample will be phase shifted with respect to the original photon beam in a characteristic way. It will be shown that by measuring the phase shift at different modulation frequencies, the Shockley-Read-Hall lifetime of minority carriers may be ascertained. The method is nondestructive inasmuch as there is no need to fabricate p-n junctions or Ohmic contacts, nor is it necessary to remove already existing Ohmic contacts of angle lap the surface, etc., procedures often needed when determining lifetimes with the scanning electron microscope (in which case a p-n junction must be present).

Von Roos, O.↗

The eight-color asteroid survey - Results for 589 minor planets

Results are presented from reflection spectrophotometry of 589 minor planets in a photometric system using eight filter passbands ranging from 0.34- to 1.04-micron wavelength. The sampling completeness approaches or exceeds 50 percent of the numbered asteroids for the near-earth objects, the Hungarias, the Nysa family, the Cybeles, the Hildas, and the Trojans. The general evolution of predominant compositional type from S to C to D with increasing heliocentric distance is evident, as is the spectral homogeneity of the Eos, Koronis, Nysa, and Themis families.

Zellner, B.↗

Measurement of minority carrier transport parameters in heavily doped n-type silicon

Measurement of minority transport parameters in heavily doped silicon is covered. The basic transport equations were used to define two independent parameters. Use of special vertical and lateral transistor test devices permitted the measurement of both parameters. Prior studies were normalized to show excellent agreement over the heavy doping region.

Delalamo, J.↗

Trap controlled minority-carrier mobility in heavily doped silicon

The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (about 10 to the 20th per cu cm) Si(Si:As) was investigated in the temperature range, 20 - 350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed behavior. The activation energy is about 10 meV, which suggests that the localized states originate from band tails but does not rule out trapping at boron atoms in the compensated n(+) region.

Neugroschel, A.↗

Minority-carrier mobility anomalies in low-resistivity silicon solar cells

Measurement of the minority-carrier mobility in the base region of a high-voltage metal-insulator-N-P solar cell (Green et al., 1984), as well as in other 0.1-ohm cm cells, provides direct proof that the high voltages measured for that cell are due not only to improved emitter characteristics but to an improved base region as well. The base characteristics are shown to be quite sensitive to the effects of diffusion-induced lattice stress originating in the emitter. The implications of these findings for the fabrication of high-efficiency cells are discussed.

Weizer, V. G.↗