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At least 343 records · Page 19

T/R Multi-Chip MMIC Modules for 150 GHz

Modules containing multiple monolithic microwave integrated-circuit (MMIC) chips have been built as prototypes of transmitting/receiving (T/R) modules for millimeter-wavelength radar systems, including phased-array radar systems to be used for diverse purposes that could include guidance and avoidance of hazards for landing spacecraft, imaging systems for detecting hidden weapons, and hazard-avoidance systems for automobiles. Whereas prior landing radar systems have operated at frequencies around 35 GHz, the integrated circuits in this module operate in a frequency band centered at about 150 GHz. The higher frequency (and, hence, shorter wavelength), is expected to make it possible to obtain finer spatial resolution while also using smaller antennas and thereby reducing the sizes and masses of the affected systems.

Samoska, Lorene A.↗

Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have prohibitively low impedances. Yet another advantage afforded by the virtual ground of the differential configuration is elimination of the need for a ground plane and, hence, elimination of the need for back-side metallization of the MMIC chip. In turn, elimination of the back-side metallization simplifies fabrication, reduces parasitic capacitances, and enables mounting of the MMIC in the electric-field plane ("E-plane") of a waveguide. E-plane mounting is consistent with (and essential for the utility of) the finline configuration, in which transmission lines lie on a dielectric sheet in the middle of a broad side of the waveguide. E-plane mounting offers a combination of low loss and ease of assembly because no millimeter-wave wire bonds or transition substrates are required. Moreover, because there is no ground plane behind the MMIC, the impedance for the detrimental even (single-ended) mode is high, suppressing coupling to that mode. Still another advantage of E-plane mounting is that the fundamental waveguide mode is inherently differential, eliminating the need for a balun to excite the differential mode.

Kangaslahti, Pekka↗

MMIC Amplifier Produces Gain of 10 dB at 235 GHz

The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.

Dawson, Douglas↗

MMIC Amplifiers for 90 to 130 GHz

This brief describes two monolithic microwave integrated-circuit (MMIC) amplifier chips optimized to function in the frequency range of 90 to 130 GHz, covering nearly all of F-band (90 - 140 GHz). These amplifiers were designed specifically for local-oscillator units in astronomical radio telescopes such as the Atacama Large Millimeter Array (ALMA). They could also be readily adapted for use in electronic test equipment, automotive radar systems, and communications systems that operate between 90 and 130 GHz.

Samoska, Lorene↗

Update on Waveguide-Embedded Differential MMIC Amplifiers

There is an update on the subject matter of Differential InP HEMT MMIC Amplifiers Embedded in Waveguides (NPO-42857) NASA Tech Briefs, Vol. 33, No. 9 (September 2009), page 35. To recapitulate: Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The MMICs are designed integrally with, and embedded in, waveguide packages. The instant work does not mention InP HEMTs but otherwise reiterates part of the subject matter of the cited prior article, with emphasis on the following salient points: An MMIC is mounted in the electric-field plane ("E-plane") of a waveguide and includes a finline transition to each differential-amplifier stage. The differential configuration creates a virtual ground within each pair of transistor-gate fingers, eliminating the need for external radio-frequency grounding. This work concludes by describing a single-stage differential submillimeter-wave amplifier packaged in a rectangular waveguide and summarizing results of tests of this amplifier at frequencies of 220 and 305 GHz.

Kangaslahti, Pekka↗

High-Aperture-Efficiency Horn Antenna

A horn antenna (see Figure 1) has been developed to satisfy requirements specific to its use as an essential component of a high-efficiency Ka-band amplifier: The combination of the horn antenna and an associated microstrip-patch antenna array is required to function as a spatial power divider that feeds 25 monolithic microwave integrated-circuit (MMIC) power amplifiers. The foregoing requirement translates to, among other things, a further requirement that the horn produce a uniform, vertically polarized electromagnetic field in its patches identically so that the MMICs can operate at maximum efficiency. The horn is fed from a square waveguide of 5.9436-mm-square cross section via a transition piece. The horn features cosine-tapered, dielectric-filled longitudinal corrugations in its vertical walls to create a hard boundary condition: This aspect of the horn design causes the field in the horn aperture to be substantially vertically polarized and to be nearly uniform in amplitude and phase. As used here, cosine-tapered signifies that the depth of the corrugations is a cosine function of distance along the horn. Preliminary results of finite-element simulations of performance have shown that by virtue of the cosine taper the impedance response of this horn can be expected to be better than has been achieved previously in a similar horn having linearly tapered dielectric- filled longitudinal corrugations. It is possible to create a hard boundary condition by use of a single dielectric-filled corrugation in each affected wall, but better results can be obtained with more corrugations. Simulations were performed for a one- and a three-corrugation cosine-taper design. For comparison, a simulation was also performed for a linear- taper design (see Figure 2). The three-corrugation design was chosen to minimize the cost of fabrication while still affording acceptably high performance. Future designs using more corrugations per wavelength are expected to provide better field responses and, hence, greater aperture efficiencies.

Pickens, Wesley↗

High-Performance Solid-State W-Band Power Amplifiers

The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.

Gaier, Todd↗

Miniaturization of Planar Horn Motors

There is a great need for compact, efficient motors for driving various mechanisms including robots or mobility platforms. A study is currently underway to develop a new type of piezoelectric actuators with significantly more strength, low mass, small footprint, and efficiency. The actuators/motors utilize piezoelectric actuated horns which have a very high power density and high electromechanical conversion efficiency. The horns are fabricated using our recently developed novel pre-stress flexures that make them thermally stable and increases their coupling efficiency. The monolithic design and integrated flexures that pre-stresses the piezoelectric stack eliminates the use of stress bolt. This design allows embedding solid-state motors and actuators in any structure so that the only macroscopically moving parts are the rotor or the linear translator. The developed actuator uses a stack/horn actuation and has a Barth motor configuration, which potentially generates very large torque and speeds that do not require gearing. Finite element modeling and design tools were investigated to determine the requirements and operation parameters and the results were used to design and fabricate a motor. This new design offers a highly promising actuation mechanism that can potentially be miniaturized and integrated into systems and structures. It can be configured in many shapes to operate as multi-degrees of freedom and multi-dimensional motors/actuators including unidirectional, bidirectional, 2D and 3D. In this manuscript, we are reporting the experimental measurements from a bench top design and the results from the efforts to miniaturize the design using 2x2x2 mm piezoelectric stacks integrated into thin plates that are of the order of3 x 3x 0.2 cm.

horn actuation↗

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Pinsukanjana, Paul R.↗

94 GHz integrated horn monopulse antennas

A monolithic azimuthal monopulse antenna for 94 GHz applications has been developed. The structure consists of a single dipole suspended in one plane of an integrated horn cavity to obtain the sum pattern, and an antiparallel pair of dipoles suspended in a different plane of the same horn cavity to achieve the difference pattern. Pattern measurements of microwave models and on the millimeter-wave antennas show good agreement with theory and exhibit symmetry with a sharp -30 dB null at broadside for the difference antenna. Microwave model measurements show input impedances close to 50 Ohms, with greater than -25 dB isolation between sum and difference antennas across a 10 percent bandwidth.

Ling, Curtis C.↗

Towards Terahertz MMIC Amplifiers: Present Status and Trends

This viewgraph presentation surveys the fastest Monolithic Millimeter-wave Integrated Circuit (MMIC) amplifiers to date; summarize previous solid state power amp results to date; reviews examples of MMICs, reviews Power vs. Gate periphery and frequency; Summarizes previous LNA results to date; reviews Noise figure results and trends toward higher frequency

FET ampllifiers↗

Integrated Design Software Predicts the Creep Life of Monolithic Ceramic Components

Significant improvements in propulsion and power generation for the next century will require revolutionary advances in high-temperature materials and structural design. Advanced ceramics are candidate materials for these elevated-temperature applications. As design protocols emerge for these material systems, designers must be aware of several innate features, including the degrading ability of ceramics to carry sustained load. Usually, time-dependent failure in ceramics occurs because of two different, delayedfailure mechanisms: slow crack growth and creep rupture. Slow crack growth initiates at a preexisting flaw and continues until a critical crack length is reached, causing catastrophic failure. Creep rupture, on the other hand, occurs because of bulk damage in the material: void nucleation and coalescence that eventually leads to macrocracks which then propagate to failure. Successful application of advanced ceramics depends on proper characterization of material behavior and the use of an appropriate design methodology. The life of a ceramic component can be predicted with the NASA Lewis Research Center's Ceramics Analysis and Reliability Evaluation of Structures (CARES) integrated design programs. CARES/CREEP determines the expected life of a component under creep conditions, and CARES/LIFE predicts the component life due to fast fracture and subcritical crack growth. The previously developed CARES/LIFE program has been used in numerous industrial and Government applications.

Source record↗

Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

coplanar waveguides↗

Monolithic four-quadrant multiplier

Integrated configuration for "differential" sequential processor is less susceptible to noise than one using discrete components. Accuracy of version is unaffected by sample-and-hold (S/H) acquisition speed, S/H droop rate, and stray pickup by separate card-mounted parts.

Lampe, D. R.↗

Development of an Additively Manufactured Subscale Secondary Sealed Container for the NASA FROSTE Project

This presentation details the development of an additively manufactured (AM) subscale test article for the secondary sealed container (SSC) as part of the NASA FROSTE project. FROSTE is focused on the collection of regolith samples from shadowed regions of the Moon and the preservation of those samples at cryogenic temperatures for return to Earth. Our team was integrated into the FROSTE program to leverage innovative design approaches and additive manufacturing capabilities in support of a scalable development strategy, where the subscale configuration serves as the development path toward a full-scale SSC. Scalmalloy was selected as the primary material for all AM components due to its favorable strength-to-weight ratio, thermal conductivity, and demonstrated performance in aerospace applications. Its aluminum-based composition supports robust mechanical behavior at cryogenic temperatures while enabling efficient heat transfer and control of thermal gradients within the containment system. The SSC architecture consists of an outer container assembly that houses a phase change material (PCM) tank, which in turn contains primary containers holding the regolith. Thermal management relies on controlled conductive and radiative heat transfer, including a thermal connection assembly that interfaces the PCM tank to an external cryocooler via a thermal strap, and IMLI surrounding the PCM tank to inhibit radiative heat transfer. The outer container assembly incorporates sealing interfaces, thermal connection ports, and I/O feedthroughs, with PTFE spring seals used at critical interfaces to maintain containment integrity. The PCM tank is manufactured as a single monolithic Scalmalloy component and incorporates an integral lattice structure to minimize thermal gradients, internal channels for thermocouple routing, and interface features for thermal connection assembly integration. The tank is centrally suspended within the outer container using support rings, with G10 insulating components employed to inhibit thermal leaks. This work describes the design methodology, AM approach, and key considerations used to inform the design.

regolith↗

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

Monolithic Microwave Integrated Circuit, (MMIC)↗

Integrated millimeter-wave corner-cube antennas

An integrated corner-reflector antennas has been designed, fabricated, and measured at millimeter-wave frequencies. The structure consists of a traveling-wave antenna integrated on a 1.2-micron dielectric membrane, and suspended in a longitudinal cavity etched in a silicon wafer. A novel traveling wave antenna design, the modified-bend antenna, with an antenna length of 1.2 lambda and spacing 0.96 lambda from the apex, results in a wideband input impedance centered at 140 Ohm and low cross-polarization levels. Measurements at 180-270 GHz show a well-defined pattern with low sidelobe levels, and a main-beam efficiency of 93 percent and 83 percent at 180 and 222 GHz, respectively. The monolithic approach allows the integration of a matching network and a Schottky-diode or SIS detector at the base of the antenna to yield a low-noise monolithic millimeter-wave receiver.

Gearhart, Steven S.↗

A G-band 160 GHz T/R Module Concept for Planetary Landing Radar

In this work, the concept of a G-band transmit/receive (T/R) module centered at 160 GHz was discussed. The design makes use of state-of-the-art G-band MMIC low noise amplifiers and power amplifiers, and a high speed SPDT InGaAs PIN diode switch. The paper reports on the designs, chip results, and the integration concept for a 160 GHz T/R module. The G-band T/R module has applications toward precision altimetry and velocimetry measurements in landing radar, such as in future planetary landers on the surface of Mars

power amplifier↗