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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Roll-to-Roll Printing of Perovskite Solar Cells

High efficiency combined with transformative roll-to-roll (R2R) printability makes metal halide perovskite-based solar cells the most promising solar technology to address the terawatt challenge of the future energy demand. However, translation from lab-scale deposition solution processing techniques to large-scale R2R methods has typically led to reduced photovoltaic performance. Here, we demonstrate large-scale, highly crystalline, uniaxially oriented, smooth perovskite films printed at room temperature and in the ambient environment. Confirmed with high speed in situ X-ray diffraction measurements, the perovskite films reach 98% of relative crystallinity at room temperature and display high texture within 1 s of the coating. We demonstrate an all-blade-coated metal halide perovskite cell with power conversion efficiency (PCE) up to 19.6%, a slot-die coated cell with a PCE of 17.3%, and a partially R2R slot-die coated flexible glass-based cell efficiency of 14.1%. As a result the developed printing method can be applied to diverse perovskite compositions, enabling a variety of bandgaps to pave the way for the future R2R printing of highly efficient perovskite–perovskite tandem cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Two Spacers, One Perovskite: Integrating Ruddlesden–Popper and Dion–Jacobson Halide Perovskites

Hybrid organic–inorganic perovskites are a rapidly developing class of materials due to their desirable properties for optoelectronic applications such as their ease of synthesis, solution-processable film formation, tunable band gap, strong photoluminescence, good charge carrier mobilities, and high defect tolerance. Here, we present a novel 2D perovskite motif that seamlessly integrates the structural elements from both Ruddlesden–Popper and Dion–Jacobson halide perovskites. We demonstrate the incorporation of two different organic spacer cations in an ordered manner in 5 novel 2D perovskite iodide materials. Both a cyclic diammonium cation 3-(aminomethyl)piperidinium (3AMP) and a linear alkyl monoammonium cation (Cn = C n H 2n+4 N, n = 4–8) are present in distinct alternating layers, making the new series (Cn) 2 (3AMP)[PbI 4 ] 2 . The crystallization of these materials was optimized through careful temperature control to obtain precise crystal structures via single-crystal X-ray diffraction (XRD) which confirmed the presence of the two cations in distinct layers. The influence of the two spacers on optical properties including the band gaps and photoluminescence spectra are found to more closely resemble (3AMP)PbI 4 than (Cn) 2 PbI 4 , which can be attributed to the amount of distortion imposed by the 3AMP spacer on the lead iodide layers. The findings are supported by density functional theory calculations. The strong photoelectric response of solution-processed thin films shows the potential of these materials in photodetectors or photovoltaics. This unprecedented amalgamation of RP–DJ in (Cn) 2 (3AMP)[PbI 4 ] 2 in a structurally ordered fashion suggests a potential vastly underexplored phase space of 2D perovskites in which there are chemically different spacers in distinct layers of the structure, providing an additional parameter to tune perovskite properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Complexation Chemistry in N,N -Dimethylformamide-Based Molecular Inks for Chalcogenide Semiconductors and Photovoltaic Devices

Molecular inks based on dimethyl sulfoxide, thiourea, and metal salts may be used to form high optoelectronic quality semiconductors and have led to high power conversion efficiencies for solution-processed photovoltaic devices for Cu 2 ZnSn(S,Se) 4 (CZTS), Cu 2 Zn(Ge,Sn)(S,Se) 4 (CZGTS), CuIn(S,Se) 2 (CIS) and Cu(In,Ga)(S,Se) 2 (CIGS). However, several metal species of interest including Ag(I), In(III), Ge(II), and Ge(IV) have either low solubility (requiring dilute inks) or lead to precipitation or gelation. Here, we demonstrate that the combination of N,N -Dimethylformamide (DMF) and thiourea (TU) has the remarkable ability to form intermediate-stability acid-base complexes with a wide number of metal chloride Lewis acids (CuCl, AgCl, ZnCl 2 , InCl 3 , GaCl 3 , SnCl 4 , GeCl 4 , and SeCl 4 ) to form high-concentration stable molecular inks. Using calorimetry, Raman spectroscopy, and solubility experiments, we reveal the important role of chloride transfer and thiourea to stabilize metal cations in DMF. Methylation of thiourea is used to vary the strength of the Lewis basicity and demonstrate that the strength of the thiourea:metal chloride complex formed after DMF evaporation is critical to prevent volatilization of metal containing species. Further, we formulated a sulfur-free molecular ink which was used to deposit photoluminescent, crystalline CuInSe 2 without selenization . Finally, we demonstrate the ability of the DMF-TU molecular ink chemistry to lead to high photovoltaic power conversion efficiencies and high open-circuit voltages for solution-processed CIS and CZGTS with PCE’s of 13.4% and 11.0% and V oc /V oc,SQ of 67% and 63%, respectively.

Clark, James A.↗
DOE OSTI2024

Breaking Barriers in Chalcogenide Perovskite Synthesis: A Generalized Framework for Fabrication of BaMS 3 (M═Ti, Zr, Hf) Materials

Abstract Chalcogenide perovskites have garnered increasing attention as stable, non‐toxic alternatives to lead halide perovskites. However, their conventional synthesis at high temperatures (>1000 °C) has hindered widespread adoption. Recent studies have developed low‐to‐moderate temperature synthesis methods (<600 °C) using reactive precursors, yet a comprehensive understanding of the pivotal factors affecting reproducibility and repeatability remains elusive. This study delineates the critical factors in the low‐temperature synthesis of BaMS 3 (M═Zr, Hf, Ti) compounds and presents a generalized framework. Innovative approaches are developed for synthesizing BaMS 3 compounds using this framework involving organometallics for solution deposition. The molecular precursor routes, employing metal acetylacetonates to generate soluble metal–sulfur bonded complexes and metal–organic compounds to produce soluble metal‐thiolate, metal‐isothiocyanate, and metal‐trithiocarbonate species, are demonstrated to yield carbon‐free BaMS 3 . These methods have achieved the most contiguous films of BaZrS 3 and BaHfS 3 using solution deposition to date. Furthermore, a hybrid solution processing method involving stacking sputter‐deposited Zr and solution‐deposited BaS layers is employed to synthesize a contiguous, oxygen‐free BaZrS 3 film. The diffuse reflectance measurements indicate a direct bandgap of ≈ 1.85 eV for the BaZrS 3 films and ≈ 2.1 eV for the BaHfS 3 film under investigation.

25 ENERGY STORAGE↗
DOE OSTI2017

Nanoscale Junction Formation by Gas-Phase Monolayer Doping

A major challenge in transistor technology scaling is the formation of controlled ultrashallow junctions with nanometer-scale thickness and high spatial uniformity. Monolayer doping (MLD) is an efficient method to form such nanoscale junctions, where the self-limiting nature of semiconductor surfaces is utilized to form adsorbed monolayers of dopant-containing molecules followed by rapid thermal annealing (RTA) to diffuse the dopants to a desired depth. Unlike ion implantation, the process does not induce crystal damage, thus making it highly attractive for nanoscale transistor processing. To date, reported MLD processes have relied on solution processing for monolayer formation. Gas-phase processing, however, benefits from higher intra- and interwafer uniformity and conformal coverage of 3D structures and is more desirable for manufacturing. In this regard, we report a new approach for MLD in silicon and germanium using gas-phase monolayer formation. We call this technology gas-phase monolayer doping (GP-MLD). This method relies on sequential pulse-purge cycles of gas-phase dopant-containing molecules to form a boron- or phosphorus-containing monolayer on a target semiconductor surface. Here, we show the feasibility of our approach through the formation of ultrashallow B- and P-doped junctions on Si and Ge surfaces. The mechanism of adsorption is characterized using Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Sub-5 nm junction depths with high dopant dose are obtained as characterized by secondary ion mass spectrometry and sheet resistance measurements. Additionally, we demonstrate that area selectivity can be achieved via lithographic patterning of the monolayer dopants before the diffusion step. The results demonstrate the versatility of the GP-MLD approach for formation of controlled and ultrashallow junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Detecting ionizing radiation using halide perovskite semiconductors processed through solution and alternative methods

We report the direct detection of high-energy radiation such as X-rays and.-rays by semiconductors at room temperature is a challenging proposition that requires remarkably pure and nearly perfect crystals. The emergence of metal halide perovskites, defect-tolerant semiconductors, is reviving hope for new materials in this field after an almost 20 year hiatus. Metal halide perovskites, which combine exceptional optoelectronic properties, versatile chemistry and simple synthesis, are challenging traditional approaches for the development of novel semiconductors for detecting hard radiation. We discuss the relevant physical properties, promising materials, fabrication techniques and device architectures for high-performance, low-cost detectors by targeting next-generation semiconductors for radiation detection. We also present a perspective on the impact of such advances in future medical imaging applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Abnormal crystal growth in CH 3 NH 3 PbI 3-x Cl x using a multi-cycle solution coating process

Recently, the efficiency of organolead trihalide perovskite solar cells has improved greatly because of improved material qualities with longer carrier diffusion lengths. Mixing chlorine in the precursor for mixed halide films has been reported to dramatically enhance the diffusion lengths of mixed halide perovskite films, mainly as a result of a much longer carrier recombination lifetime. Here we report that adding Cl containing precursor for mixed halide perovskite formation can induce the abnormal grain growth behavior that yields well-oriented grains accompanied by the appearance of some very large size grains. The abnormal grain growth becomes prominent only after multi-cycle coating of MAI : MACl blend precursor. The large grain size is found mainly to contribute to a longer carrier charge recombination lifetime, and thus increases the device efficiency to 18.9%, but without significantly impacting the carrier transport property. As a result, the strong correlation identified between material process and morphology provides guidelines for future material optimization and device efficiency enhancement.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Large n- and p-type thermoelectric power factors from doped semiconducting single-walled carbon nanotube thin films

Lightweight, robust, and flexible single-walled carbon nanotube (SWCNT) materials can be processed inexpensively using solution-based techniques, similar to other organic semiconductors. In contrast to many semiconducting polymers, semiconducting SWCNTs (s-SWCNTs) represent unique one-dimensional organic semiconductors with chemical and physical properties that facilitate equivalent transport of electrons and holes. These factors have driven increasing attention to employing s-SWCNTs for electronic and energy harvesting applications, including thermoelectric (TE) generators. Here we demonstrate a combination of ink chemistry, solid-state polymer removal, and charge-transfer doping strategies that enable unprecedented n-type and p-type TE power factors, in the range of 700 μW m –1 K –2 at 298 K for the same solution-processed highly enriched thin films containing 100% s-SWCNTs. We also demonstrate that the thermal conductivity appears to decrease with decreasing s-SWCNT diameter, leading to a peak material zT ≈ 0.12 for s-SWCNTs with diameters in the range of 1.0 nm. Here, our results indicate that the TE performance of s-SWCNT-only material systems is approaching that of traditional inorganic semiconductors, paving the way for these materials to be used as the primary components for efficient, all-organic TE generators.

14 SOLAR ENERGY↗
NASA NTRS2015

Rapid Generation of Optimal Asteroid Powered Descent Trajectories Via Convex Optimization

This paper investigates a convex optimization based method that can rapidly generate the fuel optimal asteroid powered descent trajectory. The ultimate goal is to autonomously design the optimal powered descent trajectory on-board the spacecraft immediately prior to the descent burn. Compared to a planetary powered landing problem, the major difficulty is the complex gravity field near the surface of an asteroid that cannot be approximated by a constant gravity field. This paper uses relaxation techniques and a successive solution process that seeks the solution to the original nonlinear, nonconvex problem through the solutions to a sequence of convex optimal control problems.

Pinson, Robin↗
DOE OSTI2014

Semiconducting compounds and devices incorporating same

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Semiconducting compounds and devices incorporating same

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

14 SOLAR ENERGY↗
DOE OSTI2021

Direct Deposition of Nonaqueous SnO 2 Dispersion by Blade Coating on Perovskites for the Scalable Fabrication of p–i–n Perovskite Solar Cells

Tin(IV) oxide materials have been extensively used as electron transport materials in n–i–p perovskite solar cells (PSCs) due to their superior optoelectronic properties, low-temperature processability, and high chemical stability. However, solvent incompatibility and processing temperature have limited the direct deposition of fully solution-processed SnO 2 in p–i–n devices. In this study, we overcome this limitation by the functionalization of SnO 2 nanoparticles with acetate through ligand exchange, allowing their dispersion in anhydrous ethanol. The SnO 2 dispersion was deposited on the perovskite absorber by blade coating without damaging the underlying perovskite layer, as determined by X-ray diffraction and scanning electron microscopy. Photoluminescence spectroscopy confirmed effective electron extraction. The champion device shows 14.1% initial power conversion efficiency (PCE) which is unprecedented for a p–i–n device employing solution-phase SnO 2 . Finally, PSCs stored for 40 days in a nitrogen flow box retained an average of 95.8% of the initial PCE.

14 SOLAR ENERGY↗
DOE OSTI2019

3D Conformal Printing and Photonic Sintering of High‐Performance Flexible Thermoelectric Films Using 2D Nanoplates

Abstract Flexible thermoelectric (TE) devices hold great promise for energy harvesting and cooling applications, with increasing significance to serve as perpetual power sources for flexible electronics and wearable devices. Despite unique and superior TE properties widely reported in nanocrystals, transforming these nanocrystals into flexible and functional forms remains a major challenge. Herein, demonstrated is a transformative 3D conformal aerosol jet printing and rapid photonic sintering process to print and sinter solution‐processed Bi 2 Te 2.7 Se 0.3 nanoplate inks onto virtually any flexible substrates. Within seconds of photonic sintering, the electrical conductivity of the printed film is dramatically improved from nonconductive to 2.7 × 10 4 S m −1 . The films demonstrate a room temperature power factor of 730 µW m −1 K −2 , which is among the highest values reported in flexible TE films. Additionally, the film shows negligible performance changes after 500 bending cycles. The highly scalable and low‐cost fabrication process paves the way for large‐scale manufacturing of flexible devices using a variety of high‐performing nanoparticle inks.

Saeidi‐Javash, Mortaza↗