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Double-sided solar cell package
In a solar cell array of terrestrial use, an improved double-sided solar cell package, consisting of a photovoltaic cell having a metallized P-contact strip and an N-contact grid, provided on opposite faces of the cell, a transparent tubular body forming an enclosure for the cell. A pedestal supporting the cell from within the enclosure comprising an electrical conductor connected with the P-contact strip provided for each face of the cell, and a reflector having an elongated reflective surface disposed in substantially opposed relation with one face of the cell for redirecting light were also included.
A review of high-efficiency silicon solar cells
Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.
Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells
Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.
Results of the first 150 days of the NTS-1 solar cell experiments
Twelve solar cell experiments were on the Naval Research Laboratory NTS-1 satellite launched on 14 July 1974, into a 13,260 km circular orbit at an inclination of 125 deg. The experiment comprises: 2 ohm-cm n/p, lithium-diffused p/n, violet n/p, p(+) back surface field, and ultra-thin wrap around contact cells. The short-circuit current of the experiments ranged from 2 to 12 percent higher in space than under solar simulators. During the 5 year life of the satellite, the experiments will be exposed to radiation equivalent to 2 x 10 to the 15th power 1-MeV electron cm/2 and to nearly 5500 thermal cycles.
Long-term temperature effects on GaAs solar cells
The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included.
High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells
A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.
Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells
Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycrystalline thin films grown by a chamberless inline atmospheric pressure metal organic chemical vapour deposition technique, with subsequent incorporation in CdTe solar cells. The compositional dependence of the crystal structure and optical properties of Cd(Se,Te) are examined. Selenium graded Cd(Se,Te)/CdTe absorber structure in devices are demonstrated using either a single CdSe layer or CdSe/Cd(Se,Te) bilayer (with or without As doping in the Cd(Se,Te) layer). Cross-sectional TEM/EDS, photoluminescence spectra and secondary ion mass spectroscopy analysis confirmed the formation of a graded Se profile toward the back contact with a diffusion length of ~1.5 um and revealed back-diffusion of Group V (As) dopants from the CdTe layer into Cd(Se,Te) grains. Due to the strong Se/Te interdiffusion, CdSe in the Se bilayer configuration was unable to form an n-type emitter layer in processed devices. In situ As doping of the Cd(Se,Te) layer benefited the device junction quality with current density reaching 28.3 mA/cm 2 . The results provide useful insights for the optimisation of Cd(Se,Te)/CdTe solar cells.
Optimal design study of high efficiency indium phosphide space solar cells
Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.
Stowable Solar-Cell Array
Solar electric power source easily storable and transportable. Source employs blanket of photovoltaic cells rolled up when not in use. The hollow core of canister reel used as storage space for radio equipment or first aid supplies, etc.
Development of lithium doped radiation resistent solar cells
Lithium-doped solar cells have been fabricated with initial lot efficiencies averaging 11.9 percent in an air mass zero (AMO) solar simulator and a maximum observed efficiency of 12.8 percent. The best lithium-doped solar cells are approximately 15 percent higher in maximum power than state-of-the-art n-p cells after moderate to high fluences of 1-MeV electrons and after 6-7 months exposure to low flux irradiation by a Sr-90 beta source, which approximates the electron spectrum and flux associated with near Earth space. Furthermore, lithium-doped cells were found to degrade at a rate only one tenth that of state-of-the-art n-p cells under 28-MeV electron irradiation. Excellent progress has been made in quantitative predictions of post-irradiation current-voltage characteristics as a function of cell design by means of capacitance-voltage measurements, and this information has been used to achieve further improvements in lithium-doped cell design.
Identifying impacts of process, precursors, and defects in metal halide perovskite solar cells
With efficiencies of halide perovskite solar cells stagnating over the last few years at values above 25% and approaching thermodynamic limits, focus must shift to ensuring stability of these devices over the long term. The overarching goal of this project was to understand the root causes of instability in halide perovskite solar cells. Our approach was rooted in fundamental scientific pursuits, determining at the molecular level those processes responsible for degradation of the metal halide perovskite system, either in the precursor ink, or in the solid state. We then used this understanding to show that degradation leads to midgap states in halide perovskite semiconductors, explaining loss in performance; also, this in-depth understanding allowed us to develop specifically targeted solutions to prevent these degradation mechanisms. These include guidance about amines in perovskite inks, solvents to use (and not to use), and impacts of Cs incorporation to perovskite inks and solids. Finally, we achieved our end-of-project goal and demonstrated an effective lifetime of a halide perovskite solar cell of 5000 h, including measurement of devices over 3000 h, amongst the longest in the field. Overall, this project has considerably pushed forward the science of perovskite degradation and sets examples and groundwork for future studies to enable halide perovskite solar cells to be a successful solar energy conversion technology.
Periodic annealing of radiation damage in GaAs solar cells
Continuous annealing of GaAs solar cells is compared with periodic annealing to determine their relative effectiveness in minimizing proton radiation damage. It is concluded that continuous annealing of the cells in space at 150 C can effectively reduce the proton radiation damage to the GaAs solar cells. Periodic annealing is most effective if it can be initiated at relatively low fluences (approximating continuous annealing), especially if low temperatures of less than 200 C are to be used. If annealing is started only after the fluence of the damaging protons has accumulated to a high value 10 to the 11th power sq/pcm), effective annealing is still possible at relatively high temperatures. Finally, since electron radiation damage anneals even more easily than proton radiation damage, substantial improvements in GaAs solar cell life can be achieved by incorporating the proper annealing capabilities in solar panels for practical space missions where both electron and proton radiation damage have to be minimized.
Fabrication and analysis of dot junction silicon solar cells
A design of solar cells with reduced junction area on the cell surface is investigated for reduction of saturation current and increase in open-circuit voltage. Equidiameter dot junctions distributed across the surface of the cell offer an efficient alternative, with variations in dot diameter and in the spacing between dots giving the required variations in the ratio of junctions area to total surface area. A simplified analysis for short-circuit current and other cell parameters, which enables cell design optimization, is presented. Efficiencies beyond 18 percent are obtainable in flat-plate terrestrial applications. Experimental solar-cell performance results, as functions of different area ratios, and bulk doping are presented. It is shown that saturation current reduction and open-circuit voltage increase is obtained by reduced junction area.
Utility of Thin-Film Solar Cells on Flexible Substrates for Space Power
The thin-film solar cell program at NASA GRC is developing solar cell technologies for space applications which address two critical metrics: specific power (power per unit mass) and launch stowed volume. To be competitive for many space applications, an array using thin film solar cells must significantly increase specific power while reducing stowed volume when compared to the present baseline technology utilizing crystalline solar cells. The NASA GRC program is developing two approaches. Since the vast majority of the mass of a thin film solar cell is in the substrate, a thin film solar cell on a very lightweight flexible substrate (polymer or metal films) is being developed as the first approach. The second approach is the development of multijunction thin film solar cells. Total cell efficiency can be increased by stacking multiple cells having bandgaps tuned to convert the spectrum passing through the upper cells to the lower cells. Once developed, the two approaches will be merged to yield a multijunction, thin film solar cell on a very lightweight, flexible substrate. The ultimate utility of such solar cells in space require the development of monolithic interconnections, lightweight array structures, and ultra-lightweight support and deployment techniques.
Thermal annealing of radiation damage in solar cells.
Thermal annealing of silicon solar cells with direct solar heating or electric storage methods to avoid radiation damage
Photon degradation of AlGaAs/GaAs solar cells
The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 28 C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.