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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

New high-efficiency silicon solar cells

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Daud, T.↗
NASA NTRSDate not supplied

Electroluminescence Imaging: A Quantitative Characterization Technique to Measure Dust Occlusion of Solar Cells

Electroluminescence (EL) imaging is a qualitative characterization technique that is typically used to identify cracks, corrosion, and other defects in solar cells. It consists of imaging a cell under forward bias, where the solar cell emits photons due to radiative electron-hole pair recombination. Over the past few years, our team has expanded this into a quantitative technique with the help of image processing. We have primarily used this method to investigate lunar dust occlusion of solar cells and arrays. Lunar dust accumulation on solar cells is a major concern because it directly limits light accessible to the cell, decreasing power output. Many teams are working to develop dust mitigation technology to protect these arrays on the surface of the Moon, but thoroughly characterizing their efficacy is important to ensure their success prior to launch. Here, we present EL as a quantitative characterization technique to observe dust coverage on solar cells that, when coupled with IV performance measurements, can offer unique insights into how dust coverage impacts power output. Quantitative electroluminescence imaging works by running EL images through an image processing script that first grayscales the image then plots a histogram of the brightness of each pixel. On its own, it does not offer much insight into a solar cell’s performance. However, when comparing images to a baseline pristine, undamaged, or uncoated solar cell, it can quickly provide information about the impacts of surface contaminants or damage to the cell. Here, we present a case study where quantitative EL is used to measure the efficacy of dust mitigation technology for flexible solar arrays and discuss the lessons learned about dust mitigation, testing with lunar simulant, and this characterization technique.

photovoltaics↗
NASA NTRS1990

Results of the 1990 NASA/JPL balloon flight solar cell calibration program

The 1990 solar cell calibration balloon flight consisted of two flights, one on July 20, 1990 and the other on September 6, 1990. A malfunction occurred during the first flight, which resulted in a complete loss of data and a free fall of the payload from 120,000 ft. After the tracker was rebuilt, and several solar cell modules were replaced, the payload was reflown. The September flight was successful and met all the objectives of the program. Forty-six modules were carried to an altitude of 118,000 ft (36.0 km). Data telemetered from the modules was corrected to 28 C and to 1 a.u. The calibrated cells have been returned to the participants and can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, Bruce E.↗
NASA NTRS1993

Heteroepitaxial InP, and ultrathin, directly glassed, GaAs 3-5 solar cells

The commercial application of Indium Phosphide solar cells in practical space missions is crucially dependent upon achieving a major cost reduction which could be offered by heteroepitaxy on cheaper, more rugged substrates. Furthermore, significant mass reduction, compatibility with mechanically stacked multijunction cells, and elimination of the current loss through glue discoloration, is possible in III-V solar cells by the development of ultrathin, directly glassed cells. The progress of a UK collaborative program to develop high efficiency, homojunction InP solar cells, grown by MOCVD on Si substrates, is described. Results of homoepitaxial cells (is greater than 17 percent 1 Sun AM0) are presented, together with progress in achieving low dislocation density heteroepitaxy. Also, progress in a UK program to develop ultrathin directly-glassed GaAs cells is described. Ultrathin (5 micron) GaAs cells, with 1 Sun AM0 efficiencies up to 19.1 percent, are presented, together with progress in achieving a direct (adhesive-less) bond between the cell and coverglass. Consequential development to, for example, cell grids, are also discussed.

Hardingham, C. M.↗
NASA NTRS1978

Process for utilizing low-cost graphite substrates for polycrystalline solar cells

Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

Chu, T. L.↗
NASA NTRS1992

Three-dimensional numerical modeling of indium phosphide Point-Contact Solar Cells

The Point-Contact Solar Cell (PCSC) geometry has proven very effective for silicon cells. To date, it has not been implemented in III-V materials. In addition, modeling such a geometry is very difficult because of its three-dimensional nature. We have developed a three-dimensional finite element modeling code (FIESTA ROC). In this paper, we present results from a three-dimensional modeling study of InP point-contact solar cells.

Clark, Ralph O.↗
NASA NTRS1978

Environmental qualification testing of terrestrial solar cell modules

The placement of solar cell modules in various climates and locations throughout the world results in different degrees and combinations of environmental stresses. Coupled with a design lifetime goal of 20 years, early detection and correction of module design deficiencies can result in significantly better long-term economics. This paper describes an environmental test research program for developing qualification requirements and procedures for flat-plate solar cell modules. A multiple iterative approach for establishing and evaluating test requirements is discussed as well as the rationale for the selection of levels and durations for the current qualification tests. The status of study efforts involving optical surface soiling, encapsulation delamination, and voltage bias-humidity testing is reviewed.

Hoffman, A. R.↗
NASA NTRS1977

Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells

The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.

Lindholm, F. A.↗
NASA NTRS1975

Cadmium sulfide solar cells

Development, fabrication and applications of CdS solar cells are reviewed in detail. The suitability of CdS cells for large solar panels and microcircuitry, and their low cost, are emphasized. Developments are reviewed by manufacturer-developer. Vapor phase deposition of thin-film solar cells, doping and co-evaporation, sputtering, chemical spray, and sintered layers are reviewed, in addition to spray deposition, monograin layer structures, and silk screening. Formation of junctions by electroplating, evaporation, brushing, CuCl dip, and chemiplating are discussed, along with counterelectrode fabrication, VPD film structures, the Cu2S barrier layer, and various photovoltaic effects (contact photovoltage, light intensity variation, optical enhancement), and various other CdS topics.

Stanley, A. G.↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗
NASA NTRS1994

High quality InP-on-Si for solar cell applications

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

Shellenbarger, Zane A.↗
NASA NTRS1981

Electrostatic bonding of thin (cycle sine 3 mil) 7070 cover glass to Ta2O5 AR-coated thin (cycle sine 2 mil) silicon wafers and solar cells

Electrostatic bonding of thin cover glass to thin solar cells was researched. Silicon solar cells, wafers, and Corning 7070 glass of from about 0.002" to about 0.003" in thickness were used in the investigation to establish optimum parameters for producing mechanically acceptable bonds while minimizing thermal stresses and resultant solar cell electrical parameter degradation.

Egelkrout, D. W.↗
NASA NTRS1978

Advantages of thin silicon solar cells for use in space

A system definition study on the Solar Power Satellite System showed that a thin, 50 micrometers, silicon solar cell has significant advantages. The advantages include a significantly lower performance degradation in a radiation environment and high power-to-mass ratios. The advantages of such cells for an employment in space is further investigated. Basic questions concerning the operation of solar cells are considered along with aspects of radiation induced performance degradation. The question arose in this connection how thin a silicon solar cell had to be to achieve resistance to radiation degradation and still have good initial performance. It was found that single-crystal silicon solar cells could be as thin as 50 micrometers and still develop high conversion efficiencies. It is concluded that the use of 50 micrometer silicon solar cells in space-based photovoltaic power systems would be advantageous.

Denman, O. S.↗
NASA NTRS1989

Solar cell radiation handbook. Addendum 1: 1982-1988

The Solar Cell Radiation Handbook (JPL Publication 82-69) is updated. In order to maintain currency of solar cell radiation data, recent solar cell designs have been acquired, irradiated with 1 MeV electrons, and measured. The results of these radiation experiments are reported.

Anspaugh, Bruce E.↗
NASA NTRS2005

Materials on the International Space Station - Forward Technology Solar Cell Experiment

This paper describes a space solar cell experiment currently being built by the Naval Research Laboratory (NRL) in collaboration with NASA Glenn Research Center (GRC), and the US Naval Academy (USNA). The experiment has been named the Forward Technology Solar Cell Experiment (FTSCE), and the purpose is to rapidly put current and future generation space solar cells on orbit and provide validation data for these technologies. The FTSCE is being fielded in response to recent on-orbit and ground test anomalies associated with space solar arrays that have raised concern over the survivability of new solar technologies in the space environment and the validity of present ground test protocols. The FTSCE is being built as part of the Fifth Materials on the International Space Station (MISSE) Experiment (MISSE-5), which is a NASA program to characterize the performance of new prospective spacecraft materials when subjected to the synergistic effects of the space environment. Telemetry, command, control, and communication (TNC) for the FTSCE will be achieved through the Amateur Satellite Service using the PCSat2 system, which is an Amateur Radio system designed and built by the USNA. In addition to providing an off-the-shelf solution for FTSCE TNC, PCSat2 will provide a communications node for the Amateur Radio satellite system. The FTSCE and PCSat2 will be housed within the passive experiment container (PEC), which is an approximately 2ft x2ft x 4in metal container built by NASA Langley Research Center (NASA LaRC) as part of the MISSE-5 program. NASA LaRC has also supplied a thin film materials experiment that will fly on the exterior of the thermal blanket covering the PCSat2. The PEC is planned to be transported to the ISS on a Shuttle flight. The PEC will be mounted on the exterior of the ISS by an astronaut during an extravehicular activity (EVA). After nominally one year, the PEC will be retrieved and returned to Earth. At the time of writing this paper, the subsystems of the experiment are being integrated at NRL, and we are preparing to commence environmental testing.

Walters, R. J.↗
NASA NTRS1974

A theoretical analysis of the current-voltage characteristics of solar cells

The current-voltage characteristics and efficiencies of solar cells are discussed. For one solar cell structure detailed curves are presented which include carrier densities, current densities, potential, and quasi-Fermi levels at different voltage levels both with and without optically generated carriers (AMO conditions). In addition some results are presented concerning the influence of various parameter variations such as lifetime, cell thickness, and high-low junction width on solar cell performance.

Hauser, J. R.↗