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At least 343 records · Page 19

SmartFuse: Reconfigurable Smart Switches to Accelerate Fused Collectives in HPC Applications

Communication switches have sometimes been augmented to process collectives (e.g., the IBM BlueGene project and the Mellanox SHArP switch). In this work, we find that there is a great acceleration opportunity through the further augmentation of switches to accelerate more complex functions that combine communication with computation. We consider three types of such functions. The first is fully-fused collectives built by fusing multiple existing collectives like Allreduce with Alltoall. The second is semi-fused collectives built by combining a collective with another computation. The third we refer to as higher-order collectives built by combining multiple computations and communications, such as to perform matrix-matrix multiply (PGEMM). In this work, we propose a framework called SmartFuse to accelerate fused collective functions. The core of SmartFuse is a reconfigurable smart switch to support these operations. The semi/fully fused collectives are implemented with a CGRAlike architecture, while higher-order collectives are implemented with a more specialized computational unit that can also schedule communication. Supporting our framework is software to evaluate and translate relevant parts of the input program, compile them into a control data flow graph, and then map this graph to the switch hardware. The proposed framework, once deployed, has the strong potential to accelerate existing HPC applications transparently by encapsulation within an MPI implementation. Experimental results show that this approach improves the performance of the PGEMM kernel, MINIFE, and AMG by, on average, 94%, 15%, and 13%, respectively.

Haghi, Pouya↗

( Invited ) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests

Currently, a spectrum of reliability tests are being performed by both device manufacturers and end users. Many of these qualification tests are operated within the device safe-operating-area (SOA), however, the devices often undergo dynamic events in many converter applications that can exceed the SOA boundaries. This paper presents our recent work on quantifying the out-of-SOA robustness of GaN power high-electron-mobility transistors (HEMTs) and SiC power MOSFETs by switching based tests. The unclamped inductive switching stresses are applied to p-gate GaN HEMTs to evaluate their surge-energy and overvoltage robustness. The continuous, hard-switching, turn-off stresses are applied to SiC MOSFETs to evaluate their overvoltage switching robustness. As a result, both experiments demonstrate the robustness of SiC and GaN devices under out-of-SOA switching events, and the physics of degradation and failure are understood.

42 ENGINEERING↗

Nanosecond photonic switch architectures demonstrated in an all-digital monolithic platform

We present an all-digital, fully programmable, nanosecond-scale photonic switch platform, monolithically integrating electronics for actuation, tuning, and power-monitoring alongside switching elements, resulting in a scalable, packageable solution for high-radix photonic switch fabrics. Furthermore by utilizing this platform, we achieve record loss and extinction performances comprising a 2x2 Mach Zehnder switch with 0.8 dB of loss and 28 dB extinction and a 2x2 nested Mach Zehnder switch with 1.3 dB of loss and 38 dB extinction.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

A nanosecond-scale shift-and-dump Mach-Zehnder switch

We present a Mach-Zehnder-based optical switch with novel electro-optic shift-and-dump phase shifters that have no residual amplitude modulation. As a result, the switch can have a very high extinction ratio with no overhead in power dissipation and insertion loss compared to standard electro-optic Mach-Zehnder switches. We fabricate the switch in an all-digital silicon photonic platform that monolithically integrates the actuation and control electronics together with the photonics. The switch demonstrates an extinction ratio > 33 dB, insertion loss < 1.2 dB, and nanosecond-scale transients.

42 ENGINEERING↗

Integration of Ultrawide Bandgap Photoconducting Semiconductor Switches into High-Voltage, High-Current Pulser Systems

In this feasibility study we will evaluate the viability of integrating ultrawide bandgap (UWBG) photoconducting semiconductor switches (PCSS) in high-voltage pulser systems capable of driving low-impedance dynamic loads critical for next-generation accelerator and RF-source applications. The project consisted of developing modelling tools that would inform design of UWBG PCSS packages that could be mounted onto conventional circuit boards. Specifically, we are interested in evaluating the following through simulation software: (1) resistance to electrical breakdown (2) proximity effects due to high-frequency skin effect (3) transient behavior from switching (4) effective transmission of RF signals (5) thermal dynamics of the switch under operation (6) sensitivity to inhomogeneities in optical excitation of the material (7) cross-talk effects from parallel switching structures, and (8) susceptibility of system to damaged components. The project resulted in the development of a special-purpose circuit code that implements photoconductivity physics. This code was used to evaluate objectives 1-6 above, identifying a critical requirement associated with the need for fine control of dopant concentrations in the UWBG material to reach an optimal solution for voltage standoff and laser light responsivity requirements. In addition, we identified that the temperature dependence of the electrical conductivity of this material was typically not well-measured and developed a platform for measuring both the “dark” and “illuminated” conductivity on real physical switches in the lab to better inform our models.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Switch leakage mitigation through differential cancellation

High speed analog-to-digital converters (ADC), switched-capacitor delay elements, and pulsed radio frequency (RF) systems all require switches in the signal path operating at high switching speeds, providing low resistance when enabled, and providing high signal isolation when disabled. In semiconductor technologies such as CMOS, the enabled state resistance directly scales with the sizing of the switch device, where a larger width switch provides a lower enabled state resistance. As the device width is increased, so is the capacitance formed between the gate, drain, and source of the device.

42 ENGINEERING↗

Stabilization of Switched Systems on Non Uniform Time Domain with Dwell Time

In this paper, we will present new stability conditions for a special class of linear switched systems, that evolves on non-uniform time domain. The considered systems switches between continuous-time subsystems on intervals with variable lengths and discrete-time subsystems with variable step sizes. Time scale theory is introduced to derive conditions for exponential stability of this special class of switched systems by using the dwell time approach. The conditions are based on the existence of a Lyapunov function which is non-increasing at the switching instants. This shown that this class of switched systems can be stabilized if the dwell time of each continuous-time subsystem is greater than some bound, and if the gap of the discrete-time subsystem is bounded by some specific values. Numerical examples are presented to show the effectiveness of the proposed scheme.

Taousser, Fatima Zohra↗

Exciter switch

A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

Mcpeak, W. L.↗

The dc-to-dc converters employing staggered-phase power switches with two-loop control

A switched inductor voltage is coupled to a sense winding in each phase, and all sense windings are connected in series to one of two feedback loops to provide a signal that indicates when one of the power switches is on as the principal determinant of switching instants. A sequencer is triggered each time a pulse generator is triggered to turn on a different power switch in sequence at each switching instant.

Wester, G. W.↗

High-power RF switch

Switch designed for vacuum environments can handle 5 kilowatts of microwave power. Arcing between conductors is prevented by filling gaps with Teflon rather than with inert gas as in conventional switches. Thus, switch is not susceptible to gas leakage, problem faced by conventional switches in high-vacuum applications. Compact three-port switch, developed for microwave radar transmitters aboard spacecraft, is operated by depressing spring-mounted insulating pins that can be remotely actuated by relay. When pin is depressed, it routes microwave signals to selected output port.

Caro, E. R.↗

A microprocessor based high speed packet switch for satellite communications, executive summary

The feasibility of using microprocessors to control satellite-borne packet switching was investigated by designing a packet switch architecture suitable for microprocessor control, using 2900 series components to design the processor(s), and evaluating the packet switch in terms of system throughput, delay, and queue sizes without the packet switch. System architecture for one, three, and multiple processors was designed and evaluated. The production cost of the single processor packet switch is estimated at $500,000, excluding cost of development. The three processor version which can support a maximum throughput of 500,000 packets/sec is estimated to have a production cost of under $100,000. For the multiple processor system, cost is believed to be proportional to throughput, with $1,000,000 for 500,000 packets/sec being the proportionality factor.

Arozullah, M.↗

A microprocessor based high speed space-borne packet switch

The design and performance evaluation of a single microprocessor based packet switch for use on-board a satellite are presented. The primary design criterion is to maximize the system throughput. A number of protocols and their impact on the switch design are discussed. Stem and processor hardware architectures are described. The flow charts of the software required to accomplish the essential functions are presented and modification needed for use in a multisatellite network are also indicated. Maximum throughput attainable is calculated, desirable characteristics of microprocessors for this application are pointed out. A queue theoretic model of the packet switch has been developed. Analytical relationships of the average waiting times and the queue sizes at the queues and the overall average response time with the various design parameters of the switch have been obtained. A number of graphs showing the effect of variation in the number of input and output lines, data rates, destination functions, speed of output lines and some other design parameters on the performance of the switch are presented and discussed.

Arozullah, M.↗

Evaluation of a three-processor architecture for a satellite packet switch

The architecture of a microprocessor-based packet switch using three processors for use on-board satellites is presented. The operation of the switch involves three distinct functions, namely, the input, the routing and the output functions. Each of these functions is performed by one of the three microprocessors. The operation of the switch along with those of the corresponding software routines are explained. An expression for the throughput is presented. A queue theoretic model of the switch is developed. Analytical expressions for the overall average response time at the various queues are obtained. A number of graphs showing the average response time as a function of some parameters of the switch are also presented.

Arozullakh, M.↗

Microwave switching power divider

A pair of parallel, spaced-apart circular ground planes define a microwave cavity with multi-port microwave power distributing switching circuitry formed on opposite sides of a thin circular dielectric substrate disposed between the ground planes. The power distributing circuitry includes a conductive disk located at the center of the substrate and connected to a source of microwave energy. A high speed, low insertion loss switching diode and a dc blocking capacitor are connected in series between the outer end of a transmission line and an output port. A high impedance, microwave blocking dc bias choke is connected between each switching diode and a source of switching current. The switching source forward biases the diodes to couple microwave energy from the conductive disk to selected output ports and, to associated antenna elements connected to the output ports to form a synthesized antenna pattern.

Stockton, R. J.↗

Automatic thermal control switches

Two automatic, flexible connection thermal control switches have been designed and tested in a thermal vacuum facility and in the Get Away Special (GAS) container flown on the third Shuttle flight. The switches are complementary in that one switch passes heat when the plate on which it is mounted exceeds some selected temperature and the other switch will pass heat only when the mounting plate temperature is below the selected value. Both switches are driven and controlled by phase-change capsule motors and require no other power source or thermal sensors.

Wing, L. D.↗

Magneto-optic garnet and liquid crystal optical switches

Magnetic stripe domain and liquid crystal devices are being developed and evaluated as fiber optic switches that can be utilized for nonblocking type nxm optical matrix switches in networking and optical processing. Liquid crystal switches are characterized by very low insertion loss and crosstalk, while stripe domain switches commutate in less than one microsecond. Both switches operate on multimode, randomly polarized fiber light with potentially large values for (n,m). The applications of these magnetic stripe domain and liquid crystal devices are discussed.

Krawczak, J. A.↗

Design considerations for high-power VHF radar transceivers: T/R switch design

The transceiver (TR) switch developed at NOAA's Aeronomy Laboratory for use in their 50 kW peak power, 50 MHz transmitter is described. The switch mounts inside the transmitter chassis and was designed to be compact while retaining the ability to handle well over 50 kW peak power at average power levels up to 2 kW. The TR switch is a conventional TR/ATR design with equivalent /4 transmission line sections constructed of lumped constant coils and transmitting capacitors in ''Tee' sections. Two TR sections are placed in series to achieve adequate receiver protection. The switch is set into the ''transmit' mode by forward biasing the 3 pin diodes to about 1.2 amperes each. The receive mode is achieved by back biasing the diodes to -15 volts. A directional coupler is also incorporated into the TR switch box to provide a convenient monitor point for forward and reflected transmitter power.

Ecklund, W. L.↗

The NASA satellite communication 20 x 20 matrix switches

The characteristics of two matrix switches designed for high capacity satellite communications systems are described. The switches provide routing between 20 input and 20 output ports at an IF frequency during TDMA operations. Switching speeds of 10 nsec are projected for dual gate GaAs FETs. The two designs differed in the coupling configurations, bandwidth (2.69-1.2 GHz), off-state isolation (-54 to -40 dB), switching speeds (16-37 nsec), and gain ripple (5.3-2.2 dB). Both designs achieved a 2 nsec reconfiguration rate. Further development is required to reduce the ripple effects and attain the potential 2 nsec switching speed offered by the GaAs FETs.

Saunders, A. L.↗