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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19

Perpendicular magnetic tunnel junction performance under mechanical strain

We investigate effect of the mechanical stress on the performance of magnetic tunnel junctions with perpendicular magnetic anisotropy. We developed a 4-point bending setup that allows us to apply a constant stress over a large substrate area with access to electrical measurements and an external magnetic field. This setup enables us to measure key device performance parameters, such as tunnel magnetoresistance, switching current ( I c 50 % ), and thermal stability (Δ), as a function of applied stress. Finally, we find that variations in these parameters are negligible: less than 2% over the entire measured range between the zero stress condition and the maximum stress at the point of wafer breakage.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electrical and thermal characteristics of LaB6 thermionic hollow cathodes operating in He, D2, Ar, and Xe at 4–200 Pa and 0.25–5 A cm−2

We report characteristics of lanthanum hexaboride (LaB6) cathodes for conditions relevant to a high-voltage, high-current switching device. LaB6 is selected because of its relatively low work function, stability in the presence of many common gas impurities, and a low evaporation rate (long life) at operating temperatures. We have investigated the effect of cathode geometry, gas type, pressure, and current on a LaB6 hollow cathode in a diode configuration with an opposing planar anode. The gas is stagnant at a relatively low pressure of 4–200 Pa (0.03–1.5 Torr) because of device high-voltage standoff requirements. In all cases, the plasma voltage decreases to a plateau value with increasing current where a practical device would operate. The plateau voltage aligns with the fill gas excitation or ionization voltage, depending on conditions. At high current, the cathode temperature exceeds that required for thermionic emission to supply the total current, a behavior that is understood by accounting for back-diffusing bulk electrons.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

A dynamic alternative splicing program regulates gene expression during terminal erythropoiesis

Alternative pre-messenger RNA splicing remodels the human transcriptome in a spatiotemporal manner during normal development and differentiation. Here we explored the landscape of transcript diversity in the erythroid lineage by RNA-seq analysis of five highly purified populations of morphologically distinct human erythroblasts, representing the last four cell divisions before enucleation. In this unique differentiation system, we found evidence of an extensive and dynamic alternative splicing program encompassing genes with many diverse functions. Alternative splicing was particularly enriched in genes controlling cell cycle, organelle organization, chromatin function and RNA processing. Many alternative exons exhibited differentiation-associated switches in splicing efficiency, mostly in late-stage polychromatophilic and orthochromatophilic erythroblasts, in concert with extensive cellular remodeling that precedes enucleation. A subset of alternative splicing switches introduces premature translation termination codons into selected transcripts in a differentiation stage-specific manner, supporting the hypothesis that alternative splicing-coupled nonsense-mediated decay contributes to regulation of erythroid-expressed genes as a novel part of the overall differentiation program. We conclude that a highly dynamic alternative splicing program in terminally differentiating erythroblasts plays a major role in regulating gene expression to ensure synthesis of appropriate proteome at each stage as the cells remodel in preparation for production of mature red cells.

59 BASIC BIOLOGICAL SCIENCES↗

Observation of Switchable Chiral Magnons in an Altermagnet

Chiral magnons, the quanta of handed spin waves, transport spin angular momentum without energy loss due to Joule heating. Here, the recently discovered altermagnets were proposed to host chiral magnons arising from a nonrelativistic exchange mechanism, similar to that in ferromagnets but without net magnetization, offering a stray-field-free platform for efficient magnon spin-current manipulation. In this Letter, we directly observed chiral magnons in the altermagnetic prototype MnTe using polarized inelastic neutron scattering. Furthermore, the magnon chirality was found to be reversibly switched by magnetic-field control, establishing a robust foundation for functional altermagnetic magnonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optics-on-a-chip for ultrafast manipulation of 350-MHz hard x-ray pulses

Microelectromechanical systems (MEMS) are miniature devices integrated into a vast range of industrial and consumer applications. Optical MEMS are developed for dynamic spatiotemporal control in lightwave manipulation and communication as modulators, switches, multiplexers, spectrometer, etc. However, they have not been shown to function similarly in sub-nm wavelength regimes, namely, with hard x-rays, as high-brilliance pulsed x-rays have proven powerful for addressing challenges in time-domain science, from energy conversion to neurobiological control. While desirable temporal properties of x-ray pulses can be enhanced by optics, conventional x-ray optics are inherently massive in size, hence, never dynamic. We demonstrate highly ultrafast x-ray optics-on-a-chip based on MEMS capable of modulating hard x-ray pulses exceeding 350 MHz, 10 3 × higher than any other mechanical modulator, with a pulse purity >10 6 without compromising the spectral brilliance. Moreover, the timing characteristics of the devices can be tuned on-the-fly to deliver optimal pulse properties to create a host of dynamic x-ray instruments and applications, impossible with traditional optics of 10 9 × bulkier and more massive. The advent of the ultrafast optics-on-a-chip heralds a new paradigm of x-ray photonics, time-domain science, and accelerator diagnostics, especially at not only the future-generation light sources that offer coherent and high-frequency pulses but also lab-based facilities that normally do not offer timing structures.

42 ENGINEERING↗

Zero Standby Solutions with Optical Energy Harvesting from a Laser Pointer

Despite recent efforts to reduce standby power consumption in plug loads, new trends in the miniaturization and wide distribution of electronics necessitates devices with zero standby consumption. This work introduces two zero standby solutions that wake a device using an external input of energy harvested from a 5 mW laser pointer. These solutions are applicable to electronics that are remotely activated or have a fiber optic connection. The first utilizes a cascoded header switch to allow for simultaneous low-voltage harvesting and high-voltage blocking. The second involves the use of a charge pump to boost the harvested voltage to a level appropriate for the gate of a high-voltage switch. Prototypes for each method are developed in order to demonstrate functionality and identify the associated benefits and drawbacks. The results show that combining the two methods allows for optimal activation range (up to 25 m) and component count.

42 ENGINEERING↗

Ab initio modeling of transport and thermodynamic stability for hafnia memristive devices

HfO 2 -based memristive switching devices are currently under intensive investigation due to their high performance and mature fabrication techniques. However, several critical issues have to be addressed to bring them from lab to market. We have recently looked into two important issues with the use of density functional theory methods. One is the wide distribution of device resistance in off-states. We have modeled the switching process of a Pt-HfO 2 -Pt structure for which quantized conductance was observed. Oxygen atoms moving inside a conductive oxygen vacancy filament divide the filament into several quantum wells. Device conductance changes exponentially when one oxygen atom moves away from interface into filament. We propose that the high sensitivity of device conductance to the position of oxygen atoms results in the large variation of device off-state resistance. Another issue that we have recently addressed is the poor switching performance of devices based on a TiN-HfO 2 -TiN structure. While recent experiments have shown that by inserting an "oxygen scavenger" metal between positive electrode and oxide significantly improves device performance, the fundamental understanding of the improvement is lacking.We provide detailed understanding how scavenger layers improve device performance. First, we show that Ta insertion facilitates formation of on-states by reducing the formation energy. Second, the inserted Ta layer reduces the Schottky barrier height in the off-states by changing interface electric dipole at the oxide electrode interface. Nevertheless, the device maintains a high on/off resistance ratio. Finally, with Ta insertion the on-state conductance becomes much less sensitive to the specific location from which the oxygen was removed from the oxide. In conclusion, our studies provide fundamental understanding needed for enabling realization of a non-volatile memory technology with reduced energy consumption.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Control, Fault Management, and Grid Support Functionality of an MV AC-DC Solid State Transformer based EV Extreme Fast Charging Station

Electric vehicles (EVs) have become increasingly popular in recent times while revolutionizing the consumer and commercial transportation market. The development of charging infrastructure has become one of the priorities for increasing the adoption of EVs. Extreme fast charging (XFC) technology can reduce the so-called ’range anxiety’ of consumers as they significantly reduce the charging time. With the advent of wide band-gap (WBG) power devices and improvement in power electronic converters, medium voltage (MV) solid state transformer (SST) based XFC system has the potential to replace the traditional XFC stations because of the lower footprint, ease of installation, enhanced control feature, and better system efficiency. The control system design is one of the critical aspects of the SST development process. Careful consideration and detailed analysis are required to find out suitable control method for the SST based on its topology among different centralized and decentralized control architectures. Also, the control parameters selection and potential improvement to the transient response of the controller ought to be investigated. Another major concern of the SST is different types of internal fault which reduces the overall reliability of the XFC system. As a result, designing a robust protection system is essential. Among different fault modes, open circuit switch faults have received significant attention as an active research area because of their likelihood and severe effects on converters. Therefore, the power stages used in the XFC system require functional and accurate open circuit switch fault management methods. An equally significant aspect of this SST based XFC is its compatibility in a microgrid where there is no synchronous generator present. When the grid is not available, the XFC SSTs can provide grid forming capability and continue supplying the critical loads in islanded mode. The transition between grid connected and islanded mode, especially the grid resynchronization process has to be carefully performed for the safety of the microgrid components. The challenges posed by the aforementioned issues have inspired the work done in this dissertation. Here, a 13.2 kV, 1 MVA, AC/DC SST for the XFC system is examined and a comparative analysis is conducted to select the control architecture based on feasibility of implementation and performance. A detailed control parameter design process is demonstrated considering the sensor dynamics and delay. The selected decentralized control method is augmented by introducing a novel sensor-less load current feedforward method to provide better voltage regulation at the DC bus during a change of load. Next, in the fault management section, a hierarchical failure mode effect analysis (FMEA) is proposed to enable a systematic design of the internal fault protection of the XFC SST as there are limited examples in the literature regarding the analysis of the safety and design of the protection of a power electronic converter system. Novel open circuit switch fault management methods for the converters in the system are presented. Finally, XFC SST based MV microgrid operations in grid connected mode and islanded mode are explored. A secondary control method for grid resynchronization is presented and a design process of control parameters is shown to ensure the stability of the secondary voltage and frequency regulation.

30 DIRECT ENERGY CONVERSION↗

Spin switches for compact implementation of neuron and synapse

Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Challenges in materials and devices for resistive-switching-based neuromorphic computing

This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxide materials, which exhibit unique properties that emulate key functionalities needed for this application. In Sec. I, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, and a neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Sec. II, we describe the main components of a possible solid-state implementation. In Sec. III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for neuromorphic computing. In Sec. IV, we describe why transition metal oxides are promising materials for future neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Sec. V, while existing implementations are described in Sec. VI. Section VII presents applications to practical problems. We list in Sec. VIII important basic research challenges and open issues. Here, we discuss issues related to specific implementations, novel materials, devices, and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling, and integration into a neuromorphic computer may bring us closer to the development of a machine that rivals the brain.

36 MATERIALS SCIENCE↗

Four-Switch Buck-Boost Converter Based on Model Predictive Control with Smooth Mode Transition Capability

Four-switch buck-boost converter supports both voltage step-up and step-down functionalities, but it suffers from mode transfer challenge that would need reliable mode detection when designed to operate in multi different modes. In this paper, a novel control method based on model predictive current control is proposed for such converter with inherent smooth mode transfer capability without extra design on mode detection and transfer scheme. Modulator and mode detection are replaced by an optimization process through cost function. This largely simplifies the design and makes it easily implemented. Therefore, seamless transfer between buck and boost modes is achieved with many other system level benefits. Simulation and experimental results are provided to verify the effectiveness of proposed method for the four-switch buck-boost converter.

42 ENGINEERING↗

Depinning of the ferroelectric domain wall in congruent LiNbO{sub 3}

The high coercive field, E{sub c}, of congruent LiNbO{sub 3} can be reduced by doping with Mg or Zn atoms, or by increasing the temperature above a threshold value. The physical origin for this reduction is not currently understood. Here, density functional theory calculations illustrate the atomic origin of the change in the switching field of the congruent LiNbO{sub 3}. They show that the high E{sub c} in the congruent LiNbO{sub 3} is a result of niobium antisite atoms on the lithium sublattice, pinning the motion of the domain walls. Thus, the healing of antisites by diffusion can significantly reduce the coercive field. In addition, this work demonstrates that the migration of these niobium antisites can be enhanced by doping or by changing the temperature. Thus, the depinning process of the congruent LiNbO{sub 3} is understood by the migration of the niobium antisite defect across the domain wall.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Peptide programming of supramolecular vinylidene fluoride ferroelectric phases

Ferroelectric structures have spontaneous macroscopic polarization that can be inverted using external electric fields and have potential applications including information storage, energy transduction, ultralow-power nanoelectronics and biomedical devices. These functions would benefit from nanoscale control of ferroelectric structure, the ability to switch polarization with lower applied fields (low coercive field) and biocompatibility. Soft ferroelectrics based on poly(vinylidene fluoride) (PVDF) have a thermodynamically unstable ferroelectric phase in the homopolymer, complex semi-crystalline structures, and high coercive fields. Here, in this work, we report on ferroelectric materials formed by water-soluble molecules containing only six VDF repeating units covalently conjugated to a tetrapeptide, with the propensity to assemble into the β-sheet structures that are ubiquitous in proteins. This led to the discovery of ribbon-shaped ferroelectric supramolecular assemblies that are thermodynamically stable with their long axes parallel to both the preferred hydrogen-bonding direction of β-sheets and the bistable polar axes of VDF hexamers. Relative to a commonly used ferroelectric copolymer, the biomolecular assemblies exhibit a coercive field that is two orders of magnitude lower, as the result of supramolecular dynamics, and a similar level of remnant polarization, despite having a peptide content of 49 wt%. Furthermore, the Curie temperature of the assemblies is about 40 °C higher than that of a copolymer containing a similar amount of VDF. This supramolecular system was created using a biologically inspired strategy that is attractive in terms of sustainability and that could lead to new functions for soft ferroelectrics.

36 MATERIALS SCIENCE↗

Simulation-based design of a strained graphene field effect transistor incorporating the pseudo magnetic field effect

We present a numerical study on the performance of strained graphene-based field-effect transistors. A local strain less than 10% is applied over a central channel region of the graphene to induce the shift of the Dirac point in the channel region along the transverse momentum direction. The left and the right unstrained graphene regions are doped to be either n-type or p-type. By using the atomistic tight-binding model and a Green's function method, we predict that the gate voltage applied to the central strained graphene region can switch the drain current on and off with an on/off ratio of more than six orders of magnitude at room temperature. This is in spite of the absence of a bandgap in the strained channel region. Steeper subthreshold slopes below 60 mV/decade are also predicted at room temperature because of a mechanism similar to the band-to-band tunneling field-effect transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Waning immunity and IgG4 responses following bivalent mRNA boosting

Messenger RNA (mRNA) vaccines were highly effective against the ancestral SARS-CoV-2 strain, but the efficacy of bivalent mRNA boosters against XBB variants was substantially lower. Here, we show limited durability of neutralizing antibody (NAb) responses against XBB variants and isotype switching to immunoglobulin G4 (IgG4) responses following bivalent mRNA boosting. Bivalent mRNA boosting elicited modest XBB.1-, XBB.1.5-, and XBB.1.16-specific NAbs that waned rapidly within 3 months. In contrast, bivalent mRNA boosting induced more robust and sustained NAbs against the ancestral WA1/2020 strain, suggesting immune imprinting. Following bivalent mRNA boosting, serum antibody responses were primarily IgG2 and IgG4 responses with poor Fc functional activity. In contrast, a third monovalent mRNA immunization boosted all isotypes including IgG1 and IgG3 with robust Fc functional activity. These data show substantial immune imprinting for the ancestral spike and isotype switching to IgG4 responses following bivalent mRNA boosting, with important implications for future booster designs and boosting strategies.

Science & Technology - Other Topics↗

Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-efficiency Systems

Wide bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. However, today, they remain too costly relative to Si devices to gain ubiquitous adoption in many higher power applications. In 2014, ARPA-E launched a new research program entitled SWITCHES, that seeks to enable the development of high voltage (1200 V+), high current (100 A) single die power semiconductor devices that, upon ultimately reaching scale, have the potential to reach functional cost parity ($/A) with silicon power transistors while also offering breakthrough relative circuit performance (low losses, high switching frequencies, and high temperature operation).

36 MATERIALS SCIENCE↗

Decoupling Mesoscale Functional Response in PLZT across the Ferroelectric–Relaxor Phase Transition with Contact Kelvin Probe Force Microscopy and Machine Learning

Relaxor ferroelectrics exhibit a range of interesting material behavior, including high electromechanical response, polarization rotations, as well as temperature and electric field-driven phase transitions. The origin of this unusual functional behavior remains elusive due to limited knowledge on polarization dynamics at the nanoscale. Piezoresponse force microscopy and associated switching spectroscopy provide access to local electromechanical properties on the micro- and nanoscale, which can help to address some of these gaps in our knowledge. However, these techniques are inherently prone to artefacts caused by signal contributions emanating from electrostatic interactions between tip and sample. Understanding functional behavior of complex, disordered systems like relaxor materials with unknown electromechanical properties therefore requires a technique that allows distinguishing between electromechanical and electrostatic response. Here, contact Kelvin probe force microscopy (cKPFM) is used to gain insight into the evolution of local electromechanical and capacitive properties of a representative relaxor material lead lanthanum zirconate across the phase transition from a ferroelectric to relaxor state. The obtained multidimensional data set was processed using an unsupervised machine learning algorithm to detect variations in functional response across the probed area and temperature range. Further analysis showed the formation of two separate cKPFM response bands below 50 °C, providing evidence for polarization switching. At higher temperatures only one band is observed, indicating an electrostatic origin of the measured response. In addition, the junction potential difference, which was extracted from the cKPFM data, becomes independent of the temperature in the relaxor state. As a result, the combination of this multidimensional voltage spectroscopy technique and machine learning allows to identify the origin of the measured functional response and to decouple ferroelectric from electrostatic phenomena necessary to understand the functional behavior of complex, disordered systems like relaxor materials.

36 MATERIALS SCIENCE↗

Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). Here, we showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by CH 2 OH, which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.

2-dimensional systems↗