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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

IMPATT power building blocks for 20 GHz spaceborne transmit amplifier

Single-stage circulator coupled IMPATT building block constituents of a 20-GHz solid state power amplifier (SSPA) currently under development for spaceborne downlink transmitter usage have been demonstrated as providing 1.5 to 2.0W RF power output at 4 to 5 dB operating gain over a 1 GHz bandwidth. Using either commercially available or recently developed in-house GaAs Schottky Read-profile IMPATT diodes, DC/RF power added efficiencies of 14 to 15% were achieved in these amplifier stages. A two stage IMPATT driver amplifier with similar RF output power capability exhibited 13 + or - 0.5 dB operating gain over a 1 GHz bandwidth.

Asmus, J.↗
NASA NTRS1982

Improved whisker pointing technique for micron-size diode contact

Pointed phosphor-bronze whiskers are commonly used to contact micron-size Schottky barrier diodes. A process is presented which allows pointing such wire and achieving the desired cone angle and tip diameter without the use of highly undesirable chemical reagents.

Mattauch, R. J.↗
NASA NTRS1982

Surface morphology of erbium silicide

The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

Lau, S. S.↗
NASA NTRS1982

Collisional narrowing in the optically pumped CH3OH and CH3F lasers

The gain linewidth of the optically pumped CH3F laser is observed to narrow and rebroaden with the addition of He. In addition, the same effect is observed in the CH3OH laser with the addition of the polyatomic buffer gases SF6 and CS2. These results offer conclusive evidence of the Dicke narrowing phenomena in these inverted pure rotational transitions. The effect is observed using a high harmonic mixing technique in a Schottky barrier diode.

Lawandy, N. M.↗
NASA NTRS1981

Ground-based mm-wave emission spectroscopy for the detection and monitoring of stratospheric ozone

The molecular rotational spectrum of ozone is quite rich in the mm-wave region from 50 to 300 GHz. An apparatus, which was developed primarily for detection and measurement of stratospheric ClO and other trace molecules, is found to be well suited also for the observation of ozone lines. The collecting antenna of the apparatus is a simple mm-waveguide feedhorn. The detector is a superheterodyne mixer using a special high frequency Schottky diode and a klystron local oscillator. The spectrometer is a 256 channel filter bank with 1 MHz resolution per channel. The apparatus is believed to be the first ground-based mm-wave instrument having the capability of obtaining data of sufficient quality to make use of the inversion technique. The ground based radio technique is most sensitive to changes in vertical distribution in the region above 25 km, a region which is difficult to sample by other techniques.

Parrish, A.↗
NASA NTRS1982

Imaging antenna arrays

Many millimeter and far-infrared imaging systems are limited in sensitivity and speed because they depend on a single scanned element. Because of recent advances in planar detectors such as Schottky diodes, superconducting tunnel junctions, and microbolometers, an attractive approach to this problem is a planar antenna array with integrated detectors. A planar line antenna array and optical system for imaging has been developed. The significant advances are a 'reverse-microscope' optical configuration and a modified bow-tie antenna design. In the 'reverse-microscope' configuration, a lens is attached to the bottom of the substrate containing the antennas. Imaging is done through the substrate. This configuration eliminates the troublesome effects of substrate surface waves. The substrate lens has only a single refracting surface, making possible a virtually aplanatic system, with little spherical aberration or coma. The array is characterized by an optical transfer function that is easily measured. An array with 19 dB crosstalk levels between adjacent antennas has been tested and it was found that the array captured 50 percent of the available power. This imaging system was diffraction limited.

Rutledge, D. B.↗
NASA NTRS1983

Printed Circuit Converts RF Energy to dc Power

Ultra-light-weight, large area, antenna/rectifier has 85 percent conversion efficiency. System consists of large number of repetitive circuits called "rectenna elements." Each element produces 2 W of power, comprises half-wave dipole, input filter, and Schottky barrier dipole. Two-wire microwave transmission lines act as dc power collecting buses.

Triner, J.↗
NASA NTRS1982

Preliminary submillimeter spectroscopic measurements using a submillimeter heterodyne radiometer

A submillimeter heterodyne radiometer uses a submillimeter laser, pumped by a CO2 laser, as a local oscillator and a room temperature Schottky barrier diode as the first IF mixer. The radiometer can resolve spectral lines in the submillimeter region of the spectrum (arising from pure rotational molecular transitions) to within 0.3 MHz, using acousto-optic spectrum analyzer which measures the power spectrum by simultaneously sampling 0.3 MHz wide channels over a 100 MHz bandwidth spanning the line. Preliminary observations of eight spectral lines of H2O2, CO, NH3 and H2O, all lying in the 434-524 micrometer wavelength range are described. All eight lines were observed using two local oscillator frequencies obtained by operating the submillimeter laser with either methyl fluoride (CH3F) or formic acid (HCOOH) as the lasing gas. Sample calculations of line parameters from the observed data show good agreement with established values. One development goal is the size and weight reduction of the package to make it suitable for balloon or shuttle experiments to detect trace gases in the upper atmosphere.

Safren, H. G.↗
NASA NTRS1983

Thin wire pointing method

A method is described for forming sharp tips on thin wires, in particular phosphor bronze wires of diameters such as one-thousandth inch used to contact micron size Schottky barrier diodes, which enables close control of tip shape and which avoids the use of highly toxic solutions. The method includes dipping an end of a phosphor bronze wire into a dilute solution of sulfamic acid and applying a current through the wire to electrochemically etch it. The humidity in the room is controlled to a level of less than 50%, and the voltage applied between the wire and another electrode in the solutions is a half wave rectified voltage. The current through the wire is monitored, and the process is stopped when the current falls to a predetermined low level.

Green, G.↗
NASA NTRS1983

TEM and SEM (EBIC) investigations of silicon bicrystals

The electrical and structural properties of low and medium angle tilt grain boundaries in silicon bicrystals were studied in order to obtain insight into the mechanisms determining the recombination activity. The electrical behavior of these grain boundaries was studied with the EBIC technique. Schottky barriers rather than p-n junctions were used to avoid annealing induced changes of the structure and impurity content of the as-grown crystals. Transmission electron spectroscopy reveals that the 20 deg boundary is straight, homogeneous, and free of extrinsic dislocations. It is concluded that, in the samples studied, the electrical effect of grain boundaries appears to be independent of the boundary misorientation. The dominant influence appears to be impurity segregation effects to the boundary. Cleaner bicrystals are required to study intrinsic differences in the electrical activity of the two boundaries.

Gleichmann, R.↗
NASA NTRS1982

Scanning delay generator for measurement of kinetic decays using laser-induced fluorescence techniques

An electronic device is described which generates a delayed pulse, where the delay is increased in a step-like manner. This device finds application in the measurement of kinetic decays, particularly when laser-induced fluorescent (LIF) detection of the decaying species is used. The circuit uses 15 low-power Schottky TTL chips and is contained within a dual width NIM module.

Halpern, J. B.↗
NASA NTRS1981

433 micron laser heterodyne observations of galactic CO from Mauna Kea

A submillimeter heterodyne radiometer, developed for astronomical applications, uses an optically pumped laser local oscillator and a quasi-optical Schottky diode mixer. The resultant telescope-mounted system, which has a noise temperature less than 4000 K (double sideband) and high frequency and spatial resolution, has been used to detect the J = 6 to 5 rotational transition of carbon monoxide at 434 micrometers in the Orion molecular clouds. The measurements, when compared with previous millimeter-wave data, indicate that the broad carbon monoxide emission feature is produced by an optically thin gas whose temperature exceeds 180 K.

Buhl, D.↗
NASA NTRS1982

Simple phenomenological modeling of transition-region capacitance of forward-biased p-n junction diodes and transistor diodes

The derivation of a simple expression for the capacitance C(V) associated with the transition region of a p-n junction under a forward bias is derived by phenomenological reasoning. The treatment of C(V) is based on the conventional Shockley equations, and simpler expressions for C(V) result that are in general accord with the previous analytical and numerical results. C(V) consists of two components resulting from changes in majority carrier concentration and from free hole and electron accumulation in the space-charge region. The space-charge region is conceived as the intrinsic region of an n-i-p structure for a space-charge region markedly wider than the extrinsic Debye lengths at its edges. This region is excited in the sense that the forward bias creates hole and electron densities orders of magnitude larger than those in equilibrium. The recent Shirts-Gordon (1979) modeling of the space-charge region using a dielectric response function is contrasted with the more conventional Schottky-Shockley modeling.

Lindholm, F. A.↗
NASA NTRS1982

Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, Proceedings

The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.

Long, D. M.↗
NASA NTRS1982

Minority carrier diffusion length measurements - A review and comparison of techniques

A review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Limits of applicability are indicated for each method, as relevant to indirect bandgap materials such as silicon, and direct bandgap materials like gallium arsenide. A discussion and bibliography is presented for the following techniques: uniform generation, electron beam induced current, Schottky barrier (and other steady-state) photocurrent, surface photovoltage, transient decay, and luminescence.

Khan, A. A.↗
NASA NTRS1983

Ohmic contacts for laser diodes

Requirements for ohmic contacts to laser diodes are discussed, and properties of Schottky barrier tunneling contacts are reviewed. A procedure is described for measuring contact resistance on fabricated laser material without the need for specially constructed samples and contact configurations. Measurements of contact resistance and estimates of specific contact resistance are given for Ti/Pt/Au contacts to surfaces with three different doping levels. It was found that below a p-type carrier concentration of 1 x 10 to the 19th per cu cm the contact resistance is likely to be too high for good device performance. At higher doping levels, a specific contact resistance as low as 2 x 10 to the -6th ohm sq cm was obtained. Oxide stripe lasers provided with the type of contact discussed in this paper have been operated without failures for periods up to 7 years at a current density at the contact of 6-8 kA/sq cm. It appears therefore that these contacts satisfy the need for low resistance and durability and that, at the same time, they do not cause any obvious material degradation.

Ladany, I.↗
NASA NTRS1984

Magnetron Sputtered Gold Contacts on N-gaas

Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

Buonaquisti, A. D.↗
NASA NTRS1983

Accelerated degradation of silicon metallization systems

Clemson University has been engaged for the past five years in a program to determine the reliability attributes of solar cells by means of accelerated test procedures. The cells are electrically measured and visually inspected and then subjected for a period of time to stress in excess of that normally encountered in use, and then they are reinspected. Changes are noted and the process repeated. This testing has thus far involved 23 different unencapsulated cell types from 12 different manufacturers, and 10 different encapsulated cell types from 9 different manufacturers. Reliability attributes of metallization systems can be classified as major or minor, depending on the severity of the effects observed. As a result of the accelerated testing conducted under the Clemson program, major effects have been observed related to contact resistance and to mechanical adherence and solderability. This paper does not attempt a generalized survey of accelerated test results, but rather concentrates on one particular attribute of metallization that has been observed to cause electrical degradation - increased contact resistance due to Schottky barrier formation. In this example basic semiconductor theory was able to provide an understanding of the electrical effects observed during accelerated stress testing.

Lathrop, J. W.↗