Recent Power MOSFET Test Results
The results of recent Single Event Effect (SEE) testing of newly available power MOSFETS are presented.
radiation hard power solutions↗
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SEE Test Report for Arizona Microtek AZ88923 High Speed Limiting Post Amplifier
The primary purpose of this testing is to characterize the Texas Instruments AZ88923 post amplifier for susceptibility to single-event latchup (SEL) and other destructive Single-Event Effects (SEE). These data will be used to assess the destructive SEE risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the post amplifier to single-event transients (SET) and other nondestructive SEE. In particular, the loss-of-signal feature could give rise to some significant anomalies. However, it is not used on OLA.
Raymond Ladbury↗
Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory
We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.
Oldham, Timothy R.↗
Effects of Radiation on Commercial Power Devices
The effects of radiation on various commercial power devices are presented. The devices have proved to be very fragile to single event effects, with some of the devices actually succumbing to catastrophic SEE with protons.
power semiconductor devices↗
Development of ion beams for space effects testing using an ECR ion source
At LBNL's 88-Inch Cyclotron and Berkeley Accelerator Space Effects (BASE) Facility, a range of ion beams at energies from 1 to 55 MeV/nucleon are used for radiation space effects testing. By bombarding a component with ion beams the radiation component of the space environment can be simulated and single event effects (SEEs) determined. The performance of electronic components used in space flight and high altitude aircraft can then be evaluated. The 88- Inch Cyclotron is coupled to the three electron cyclotron resonance ion sources (ECR, AECR-U, VENUS). These ion sources provide a variety of ion species, ranging from protons to heavy ions such as bismuth, for these tests. In particular the ion sources have been developed to provide {sup c}ocktails{sup ,} a mixture of ions of similar mass-to-charge ratio, which can be simultaneously injected into the cyclotron, but selectively extracted from it. The ions differ in both their linear energy transfer (LET) deposited to the part and in their penetration depth into the tested part. The current heavy ion cocktails available are the 4.5, 10, 16, and 30 MeV per nucleon.
43 PARTICLE ACCELERATORS↗
Ionizing Radiation Environment on the International Space Station: Performance vs. Expectations for Avionics and Material
The role of structural shielding mass in the design, verification, and in-flight performance of International Space Station (ISS), in both the natural and induced orbital ionizing radiation (IR) environments, is reported. Detailed consideration of the effects of both the natural and induced ionizing radiation environment during ISS design, development, and flight operations has produced a safe, efficient manned space platform that is largely immune to deleterious effects of the LEO ionizing radiation environment. The assumption of a small shielding mass for purposes of design and verification has been shown to be a valid worst-case approximation approach to design for reliability, though predicted dependences of single event effect (SEE) effects on latitude, longitude, SEP events, and spacecraft structural shielding mass are not observed. The Figure of Merit (FOM) method over predicts the rate for median shielding masses of about 10g/cm(exp 2) by only a factor of 3, while the Scott Effective Flux Approach (SEFA) method overestimated by about one order of magnitude as expected. The Integral Rectangular Parallelepiped (IRPP), SEFA, and FOM methods for estimating on-orbit (Single Event Upsets) SEU rates all utilize some version of the CREME-96 treatment of energetic particle interaction with structural shielding, which has been shown to underestimate the production of secondary particles in heavily shielded manned spacecraft. The need for more work directed to development of a practical understanding of secondary particle production in massive structural shielding for SEE design and verification is indicated. In contrast, total dose estimates using CAD based shielding mass distributions functions and the Shieldose Code provided a reasonable accurate estimate of accumulated dose in Grays internal to the ISS pressurized elements, albeit as a result of using worst-on-worst case assumptions (500 km altitude x 2) that compensate for ignoring both GCR and secondary particle production in massive structural shielding.
Koontz, Steven L.↗
Measurements of Single Event Upset in ATLAS IBL
Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.
47 OTHER INSTRUMENTATION↗
Proton Effects and Test Issues for Satellite Designers: Displacement Effects - Section 4
Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects described in section IVA. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses [Srou88a, Summ92, Hopk97] which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves.
Marshall, Cheryl J.↗
Proton Effects and Test Issues for Satellite Designers
Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves. Ion-solid interactions and the nature of the displacement damage they generate have been studied extensively for over half a century, yet they still remain a subject of investigation. In this section, a description of the mechanisms by which displacement damage is produced will be followed by a summary of the major consequences for device performance in a space environment. Often the degradation of a device parameter can be characterized by a damage factor (measured in a laboratory using monoenergetic protons) that is simply the change in a particular electrical or optical parameter per unit proton fluence. In addition, we will describe the concept of a non-ionizing energy loss rate (NIEL) which quantifies that portion of the energy lost by an incident ion that goes into displacements. It has been calculated as a function of proton energy, and is analogous to (and has the same units as) the linear energy transfer (LET) for ionizing energy. We will discover that, to first order, the calculated NIEL describes the energy dependence of the measured device damage factors. This observation provides the basis for predicting proton induced device degradation in a space environment based on both the calculated NIEL and relatively few laboratory test measurements. The methodology of such on-orbit device performance predictions will be described, as well as the limitations. Several classes of devices for which displacement damage is a significant (if not the dominant) mode of radiation induced degradation will be presented.
Marshall, Cheryl J.↗
CREME: The 2011 Revision of the Cosmic Ray Effects on Micro-Electronics Code
We describe a tool suite, CREME, which combines existing capabilities of CREME96 and CREME86 with new radiation environment models and new Monte Carlo computational capabilities for single event effects and total ionizing dose.
Adams, James H., Jr.↗
Mitigation of High Altitude and Low Earth Orbit Radiation Effects on Microelectronics via Shielding or Error Detection and Correction Systems
The NASA Cooperative Agreement NAG4-210 was granted under the FY2000 Faculty Awards for Research (FAR) Program. The project was proposed to examine the effects of charged particles and neutrons on selected random access memory (RAM) technologies. The concept of the project was to add to the current knowledge of Single Event Effects (SEE) concerning RAM and explore the impact of selected forms of radiation on Error Detection and Correction Systems. The project was established as an extension of a previous FAR awarded to Prairie View A&M University (PVAMU), under the direction of Dr. Richard Wilkins as principal investigator. The NASA sponsored Center for Applied Radiation Research (CARR) at PVAMU developed an electronic test-bed to explore and quantify SEE on RAM from charged particles and neutrons. The test-bed was developed using 486DX microprocessor technology (PC-104) and a custom test board to mount RAM integrated circuits or other electronic devices. The test-bed had two configurations - a bench test version for laboratory experiments and a 400 Hz powered rack version for flight experiments. The objectives of this project were to: 1) Upgrade the Electronic Test-bed (ETB) to a Pentium configuration; 2) Accommodate more than only 8 Mbytes of RAM; 3) Explore Error Detection and Correction Systems for radiation effects; 4) Test modern RAM technologies in radiation environments.
Gupta, Kajal↗
Radiation Effects on Electronics: How to Destroy a Satellite in Three Easy Steps [Slides]
This report contains a set of slides intended for a summer school at Los Alamos National Laboratory (LANL). On the topic of radiation effect on electronics, this presentation provides a brief overview of transistors and discusses Total Ionizing Dose (TID), Displacement Damage (DD) or Total Non-ionizing Dose (TNID), and Single-Event Effects (SEEs) in relation to radiation effects for satellites.
42 ENGINEERING↗
NAIRAS Model Updates and Improvements to the Prediction of the Ionizing Radiation Environment from the Earth's Surface to Geospace
- NAIRAS Model Description - Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) Model - Running in real-time on LaRC computer cluster since 2011, results hosted on Space Environment Technologies server/website - Running in real-time at CCMC since 2020 - Key Model Features - Global ionizing radiation environment model - Physics-based HZETRN (High Charge (Z) and Energy TRaNsport) code - Real-time inclusion of solar energetic particle (SEP) radiation - Real-time solar-magnetospheric effects on radiation (cutoff model by Kress et al. [2004, 2010]) - New/Current Model Development - Improved SEP dose nowcast and forecast - Extend to low-Earth orbit (LEO) environment - Single-Event Effects (SEE) radiation risk assessment quantities - Run-on-Request (RoR) @ CCMC
Christopher J. Mertens↗
NEPP Independent Single Event Upset Testing of the Microsemi RTG4: Preliminary Data
We present an independent investigation of heavy-ion single event effect data for the Microsemi RTG4 field programmable gate array (FPGA).
Field Programmable Gate Array (FPGA)↗
Heavy Ion Irradiation Test Report for the Samsung 850 PRO Series Solid State Drive
The purpose of this test was to determine the heavy ion-induced single-event effect (SEE) susceptibility of the Samsung solid state drive (SSD) containing the Vertical-NAND (VNAND) flash technology. This test was supported by the NASA Electronics Parts and Packaging (NEPP) Program.
Solid State Drive (SSD)↗
Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout
Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.
Scheick, Leif↗
1999 NSREC Short Course: Proton Effects and Test Issues for Satellite Designers: Displacement Effects
This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies.
Marshall, Cheryl J.↗
Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance
Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.
Single Event Gate Rupture↗