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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗
NASA NTRS1978

Investigation of charge coupled device correlation techniques

Analog Charge Transfer Devices (CTD's) offer unique advantages to signal processing systems, which often have large development costs, making it desirable to define those devices which can be developed for general system's use. Such devices are best identified and developed early to give system's designers some interchangeable subsystem blocks, not requiring additional individual development for each new signal processing system. The objective of this work is to describe a discrete analog signal processing device with a reasonably broad system use and to implement its design, fabrication, and testing.

Lampe, D. R.↗
NASA NTRS1979

Optical devices for proximity operations study and test report

Operational and physical requirements were investigated for a low-light-level viewing device to be used as a window-mounted optical sight for crew use in the pointing, navigating, stationkeeping, and docking of space vehicles to support space station operations and the assembly of large structures in space. A suitable prototype, obtained from a commercial vendor, was subjected to limited tests to determine the potential effectiveness of a proximity optical device in spacecraft operations. The constructional features of the device are discussed as well as concepts for its use. Tests results show that a proximity optical device is capable of performing low-light-level viewing services and will enhance manned spacecraft operations.

Smith, R. A.↗
NASA NTRS1980

Capillary acquisition devices for high-performance vehicles: Executive summary

Technology areas critical to the development of cryogenic capillary devices were studied. Passive cooling of capillary devices was investigated with an analytical and experimental study of wicking flow. Capillary device refilling with settled fluid was studied using an analytical and experimental program that resulted in successful correlation of a versatile computer program with test data. The program was used to predict Centaur D-1S LO2 and LH2 start basket refilling. Comparisons were made between the baseline Centaur D-1S propellant feed system and feed system alternatives including systems using capillary devices. The preferred concepts from the Centaur D-1S study were examined for APOTV and POTV vehicles for delivery and round trip transfer of payloads between LEO and GEO. Mission profiles were determined to provide propellant usage timelines and the payload partials were defined.

Blatt, M. H.↗
NASA NTRS1980

Method of forming a sharp edge on an optical device

A sharp edge is formed on an optical device by placing the optical device in a holding mechanism; grinding one surface so that it and a surface of the holding mechanism are co-planar; and polishing both the surface of the optical device and the surface of the holding mechanism with felt until an edge on the surface of the optical device adjacent to the surface of the holding mechanism obtains a desired sharpness.

Fleetwood, C. M.↗
NASA NTRS1979

Aerospace Ground Equipment for model 4080 sequence programmer. A standard computer terminal is adapted to provide convenient operator to device interface

The Aerospace Ground Equipment (AGE) provides an interface between a human operator and a complete spaceborne sequence timing device with a memory storage program. The AGE provides a means for composing, editing, syntax checking, and storing timing device programs. The AGE is implemented with a standard Hewlett-Packard 2649A terminal system and a minimum of special hardware. The terminal's dual tape interface is used to store timing device programs and to read in special AGE operating system software. To compose a new program for the timing device the keyboard is used to fill in a form displayed on the screen.

Nissley, L. E.↗
NASA NTRS1982

Total-dose radiation effects data for semiconductor devices, volume 3

Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

Price, W. E.↗
NASA NTRS1983

Radiation effects on MOS devices - dosimetry, annealing, irradiation sequence, and sources

This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.

Stassinopoulos, E. G.↗
NASA NTRS1984

Crystal growth of device quality GaAs in space

The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

Gatos, H. C.↗
NASA NTRS1984

Performance of large-eddy breakup devices at post-transitional Reynolds numbers

Large-eddy alteration techniques were used to modify the drag characteristics of the turbulent boundary layer. Local skin-friction coefficients were measured for single and multi-element arrays of thin plates suspended in a fully turbulent, flat plate, boundary layer at R(theta) = 3,000. Effects of these devices were measured more than 300 boundary-layer thicknesses downstream to R(theta) = 17,000. It was found that although most of the devices reduced the local skin friction immediately downstream, this reduced skin-friction region persisted for only 100-120 delta-0, after which a rapid rise in skin-friction coefficient occurred, often exceeding flat plate values. Net drag reductions were obtained only for tandem configurations and these reductions were sensitive to device spacing and height. The maximum net drag reduction reported was approximately 7 percent with a device spacing of 10 delta-0 at a height of 0.8 delta-0.

Anders, J. B.↗
NASA NTRS1985

Electrical performance of semiconductor devices at cryogenic temperatures

The electrical performance of semiconductor devices is examined over the temperature range from 300 to 1.4K The design, fabrication, and testing of p-channel field effective transistors (MOSFET) are emphasized to develop a device that will perform satisfactorily in the temperature range from 4.2 to 1.4K. The current-voltage characteristics of the device are obtained as a function of temperature for varying channel lengths and channel dopant levels. The MOSFET's with average channel lengths of 3.27, 5.68, 8.37, and 11.39 microns are examined. It is indicated that the devices with the shorter channel lengths perform better in the 4 to 20K range than those with the longer channel lengths.

Ventrice, C. A.↗
NASA NTRS1985

Effects of leading-edge devices on the low-speed aerodynamic characteristics of a highly-swept arrow-wing

An investigation was conducted in the Texas A&M University 7 by 10 foot Low Speed Wind Tunnel to provide a direct comparison of the effect of several leading edge devices on the aerodynamic performance of a highly swept wing configuration. Analysis of the data indicates that for the configuration with undeflected leading edges, vortex separation first occurs on the outboard wing panel for angles of attack of approximately 2, and wing apex vorticies become apparent for alpha or = 4 deg. However, the occurrence of the leading edge vortex flow may be postponed with leading edge devices. Of the devices considered, the most promising were a simple leading edge deflection of 30 deg and a leading edge slat system. The trailing edge flap effectiveness was found to be essentially the same for the configuration employing either of these more promising leading edge devices. Analysis of the lateral directional data showed that for all of the concepts considered, deflecting leading edge downward in an attempt to postpone leading edge vortex flows, has the favorable effect of reducing the effective dihedral.

Scott, S. J.↗
NASA NTRS1985

Materials requirements for optical processing and computing devices

Devices for optical processing and computing systems are discussed, with emphasis on the materials requirements imposed by functional constraints. Generalized optical processing and computing systems are described in order to identify principal categories of requisite components for complete system implementation. Three principal device categories are selected for analysis in some detail: spatial light modulators, volume holographic optical elements, and bistable optical devices. The implications for optical processing and computing systems of the materials requirements identified for these device categories are described, and directions for future research are proposed.

Tanguay, A. R., Jr.↗
NASA NTRS1985

Generalized reciprocity theorem for semiconductor devices

A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.

Misiakos, K.↗
NASA NTRS1987

Four-terminal electrical testing device

The invention relates to a four-terminal electrical connector device for testing and measuring unknown resistances of initiators used for starting pyrotechnic events aboard the space shuttle. The testing device minimizes contact resistance degradation effects and so improves the reliability of resistance measurements taken with the device. Separate and independent voltage sensing and current supply circuits each include a pair of socket contacts for mating engagement with the pins of the initiator. The unknown resistance that is measured by the device is the resistance of the bridgewire of the initiator which is required to be between 0.95 and 1.15 ohms.

Robinson, Robert L.↗
NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Summers, C. J.↗
NASA NTRS1987

Processes in construction of failure management expert systems from device design information

This paper analyzes the tasks and problem solving methods used by an engineer in constructing a failure management expert system from design information about the device to te diagnosed. An expert test engineer developed a trouble-shooting expert system based on device design information and experience with similar devices, rather than on specific expert knowledge gained from operating the device or troubleshooting its failures. The construction of the expert system was intensively observed and analyzed. This paper characterizes the knowledge, tasks, methods, and design decisions involved in constructing this type of expert system, and makes recommendations concerning tools for aiding and automating construction of such systems.

Malin, Jane T.↗
NASA NTRS1988

Microwave and millimeter-wave resonant-tunneling devices

Resonant-tunneling devices in microelectronic component form, whose structure is the electron analog of a Fabry-Perot resonator, encompass oscillators, self-oscillating mixers, and harmonic multipliers. The negative differential resistance characteristic of these devices has been obtained at room temperature, and resonant-tunneling transistors capable of operation in the THz-frequency range appear to be feasible. Three-terminal resonant-tunneling device development is in its infancy, as is that of devices for digital applications.

Sollner, T. C. L. Gerhard↗