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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Lithium-doped solar cells for space use

Lithium doped p-n solar cells meet the basic requirements for space use. The efficiencies of the Lopex lithium cells which range from 10.5 to 12.8% are equal to or better than C.G. lithium cell and 10 ohms-cm n-p cell efficiencies. Reduction in the stresses introduced during boron diffusion has eliminated cell size restrictions and both 2 x 2 and 2 x 6 cm lithium doped cells have been fabricated. The Ti-Ag contacts which are tested 100% with a tape peel test, and pull tested and humidity tested on a sample basis are comparable to the Ti-Ag contacts on n-p cells.

Payne, P. A.↗
NASA NTRS1971

The observation of structural defects in neutron-irradiated lithium-doped silicon solar cells

Electron microscopy has been used to observe the distribution and morphology of lattice defects introduced into lithium-doped silicon solar cells by neutron irradiation. Upon etching the surface of the solar cells after irradiation, crater-like defects are observed that are thought to be associated with the space charge region around vacancy clusters. Thermal annealing experiments showed that the crater defects were stable in the temperature range 300 to 1200 K in all of the lithium-doped samples. Some annealing of the crater defects was observed to occur in the undoped cells which were irradiated at the lowest doses.

Sargent, G. A.↗
NASA NTRS1971

Doping explosive materials for neutron radiographic enhancement.

Discussion of studies relating to the selection of doping materials of high neutron absorption usable for enhancing the neutron radiographic imaging of explosive mixtures, without interfering with the proper chemical reaction of the explosives. The results of the studies show that gadolinium oxide is an excellent material for doping explosive mixtures to enhance the neutron radiographic image.

Golliher, K. G.↗
NASA NTRS1972

The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

Ghosh, S.↗
NASA NTRS1972

Development and pilot line production of lithium doped silicon solar cells

The work performed over the period of September 1971 to August 1972 to develop production processes for fabrication of lithium doped P/N cells is described. The BCl3 diffusion without 02 was selected as the optimum diffusion process for fabrication of lithium doped cells. An 8-2-7 (warm up - deposition - drive-in time in minutes) diffusion schedule at 1055 C was used for the first two lots (300 cells each) delivered to JPL. Cell efficiencies ranged from 11.0 to 13.7% based on an AMO of 135.3 mW/sq cm. These high efficiencies were obtained using from 10 to 40 cells per boron diffusion; increasing the quantity beyond 40 resulted in lower outputs. At this point, the emphasis was placed on investigation of a BCl3 with 02 diffusion. Through evaluation of the effects of diffusion time and temperature, gas flow rates, and desposition plus drive-in vs. continuous deposition and no drive-in cycles, diffusion parameters were determined which produced short circuit currents of 136 + or - 4 mA for ten cells spaced along 12 in. of the diffusion boat. The quantity was increased to 60, 100, and 150 cell diffusions with no more variation in cell short circuit current than observed with 10 cells.

Payne, P. A.↗
NASA NTRS1975

Effects of high doping levels on silicon solar cell performance

Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
NASA NTRS1975

Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells

Fundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.

Lindholm, F. A.↗
NASA NTRS1976

Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

Technology was developed for production of doped-germanium detectors which have optimized performance in the 30- to 120-micrometer wavelength range and are capable of achieving the objectives of the Infrared Astronomy Satellite space mission. The work of this phase was divided into the following major tasks: (1) growth of Ge:Ga crystals from high-purity starting material with Ga concentrations different from that previously produced, and development of a zone leveling method to produce a uniform Ga doping concentration; (2) growth of uncompensated Ge:Be crystals from high-purity starting material with a range of Be concentrations between 10 to the 14th power and 10 to the 16th power atoms/cubic cm; (3) evaluation of crystals by means of Hall effect and resistance measurements as a function of temperature; (4) fabrication and test of detectors made from both Ge:Be and Ge:Ga crystals to determine the relative performance between different crystals. Correlation of detector test data with material evaluation data and analysis of how to further optimize detector performance.

Bratt, P. R.↗
NASA NTRS1977

Formation of Na2SO4 and K2SO4 in flames doped with sulfur and alkali chlorides and carbonates

High pressure, free-jet expansion, mass spectrometric sampling was used to identify directly and to measure reaction products formed in doped methane-oxygen flames. Flames were doped with SO2 or CH3SH and sodium or potassium chlorides or carbonates. Gaseous NA2SO4 or K2S04 molecules were formed in residence times on the order of msec for each combination of dopants used. Composition profiles of combustion products were measured and compared with equilibrium thermodynamic calculations of product composition.

Fryburg, G. C.↗
NASA NTRS1977

Formation of Na2SO4 and K2SO4 in flames doped with sulfur and alkali chlorides and carbonates

High pressure, free-jet expansion, mass spectrometric sampling was used to identify directly and to measure reaction products formed in doped methane-oxygen flames. Flames were doped with SO2 or CH3SH and sodium or potassium chlorides or carbonates. Gaseous Na2SO4 or K2SO4 molecules were formed in residence times on the order of 1 msec for each combination of dopants used. Composition profiles of combustion products were measured and compared with equilibrium thermodynamic calculations of product composition.

Fryburg, G. C.↗
NASA NTRS1980

Effect of W and WC on the oxidation resistance of yttria-doped silicon nitride

The effect of W and WC contamination on the oxidation and cracking in air of sintered Si3N4 - 8 w/o Y2O3 ceramics at 500, 750, and 1350 C is examined. A mixture of Si3N4 - 8Y2O3, milled with alumina balls, was divided into four portions. Three portions were doped with 2 w/o WC W, and 4 w/o W respectively, in order to simulate contamination during milling. The fourth portion was undoped and used on a control. The addition of W or WC did not affect the phase relationships in the system, as all bars with or without additions contained melilite as the major Si-Y-O-N phase after sintering. At 750 C, instability (rapid oxidation and cracking) of W-doped bars appears to have occurred as a result of oxidation of the tungsten containing melilite phase. No intermediate temperature instability was observed in bars containing 2 w/o WC or in bars with no additive. Specimens exposed at 1350 C had good oxidation resistance due to the formation of a protective siliceous oxide layer. A specimen containing 4 w/o W which was preoxidized at 1350 C had improved oxidation resistance at 750 C. The tendency towards oxidation and cracking of Si3N4 - 8 Y2O3 at 750 C is concluded to be related to tungsten content of the sintered bars.

Schuon, S.↗
NASA NTRS1982

OM-VPE growth of Mg-doped GaAs

The epitaxial growth of Mg-doped GaAs by the organometallic vapor phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.

Lewis, C. R.↗
NASA NTRS1982

Doping behavior of iodine in Hg/0.8/Cd/0.2/Te

The defect state prevailing in iodine doped single-crystal samples of Hg0.8Cd0.2Te, annealed at 450-600 C in Hg vapor, has been deduced from Hall effect measurements on samples cooled to 77 K from the annealing temperature. Results are found to be similar to those previously obtained for iodine doped CdS, i.e. iodine acts as a single donor occupying Te lattice sites with a fraction paired with the native acceptor defects. The concentration of iodine on tellurium lattice sites increases with the partial pressure of Hg, whereas that of the pair species increases as the partial pressure of Hg decreases.

Vydyanath, H. R.↗
NASA NTRS1984

Evaluation of candidate Stirling engine heater tube alloys after 3500 hours exposure to high pressure doped hydrogen or helium

The heater head tubes of current prototype automotive Stirling engines are fabricated from alloy N-155, an alloy which contains 20 percent cobalt. Because the United States imports over 90 percent of the cobalt used in this country and resource supplies could not meet the demand imposed by automotive applications of cobalt in the heater head (tubes plus cylinders and regenerator housings), it is imperative that substitute alloys free of cobalt be identified. The research described herein focused on the heater head tubes. Sixteen alloys (15 potential substitutes plus the 20 percent Co N-155 alloy) were evaluated in the form of thin wall tubing in the NASA Lewis Research Center Stirling simulator materials diesel fuel fired test rigs. Tubes filled with either hydrogen doped with 1 percent CO2 or with helium at a gas pressure of 15 MPa and a temperature of 820 C were cyclic endurance tested for times up to 3500 hr. Results showed that two iron-nickel base superalloys, CG-27 and Pyromet 901 survived the 3500 hr endurance test. The remaining alloys failed by creep-rupture at times less than 3000 hr, however, several other alloys had superior lives to N-155. Results further showed that doping the hydrogen working fluid with 1 vol % CO2 is an effective means of reducing hydrogen permeability through all the alloy tubes investigated.

Misencik, J. A.↗
NASA NTRS1984

Electrical properties of metal-doped pyridine-derived polyimide films

A series of polyimide films containing pyridine coordinating groups doped with cobalt or nickel ions has been examined. Using 3,3',4,4'-benzophenonetetracarboxylic acid dianhydride, films were prepared in combination with 4,4'-oxydianiline, 4,4'-dianiline sulfide, 3,3'-bis(aminopyridine) sulfide and 2,2'-dioxyphenelenebis (5,5'-aminopyridine). Room temperature volume resistivities have been found to decrease slightly with sulfur and pyridine containing diamines relative to diamines which do not contain these functionalities. Doping with cobalt and nickel additives results in further lowering of room temperature volume resistivity. Preliminary temperature profiling experiments have shown that volume resistivity decreases as T(g) is approached.

Khor, E.↗
NASA NTRS1985

Extension of long wavelength response by modulation doping in extrinsic germanium infrared detectors

A new concept for infrared detectors based on multilayer epitaxy and modulation doping has been investigated. This permits a high doping concentration and lower excitation energy in the photodetecting layer as is necessary for longer wavelength response, without incurring the detrimental effects of increased dark current and noise as would be the case with conventional detector designs. Germanium photodetectors using conventional materials and designs have a long wavelength cutoff in the infrared at 138 microns, which can only be extended through the inconvenient application of mechanical stress or magnetic fields. As a result of this approach which was arrived at from theoretical considerations and subsequently demonstrated experimentally, the long wavelength cutoff for germanium extrinsic detectors was extended beyond 200 microns, as determined by direct infrared optical measurements.

Hadek, V.↗
NASA NTRS1985

Enhancement of intensity-dependent absorption in InP and GaAs at 1.9 microns by doping

It is pointed out that the study of intensity-dependent absorption (IDA) in general, and two-photon absorption (TPA), in particular, has suffered from experimental difficulties and inadequate theoretical models. Bass et al. (1979) could improve the experimental situation by making use of laser calorimetry to obtain directly the TPA coefficient of a medium with a high degree of sensitivity. In the present investigation, the employed technique has been used to study the effect of deep level dopants on IDA in InP and GaAs. It is found that the coefficient for IDA is strongly dependent on the presence of Fe in InP and Cr in GaAs. The conducted investigation had the objective to examine the effect of deep level impurities on IDA processes in InP and GaAs. Fe-doped InP and Cr-doped GaAs were compared with undoped crystals.

Li, N.-L.↗
NASA NTRS1984

Electron mobility in modulation-doped heterostructures

A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

Walukiewicz, W.↗