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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

Benz, R. G., II↗
NASA NTRS1989

Growing Gallium Arsenide On Silicon

Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

Radhakrishnan, Gouri↗
NASA NTRS1989

Delayed Shutters For Dual-Beam Molecular Epitaxy

System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

Grunthaner, Frank J.↗
NASA NTRS1988

Characterization of GaAlAs optical waveguide heterostructures grown by molecular beam epitaxy

Multiple-layer GaAlAs optical waveguide heterostructures have been grown by MBE. These samples were designed to operate at 840 nm with negligible coupling of guided light to the absorbing GaAs substrate. The Al concentration was 13 percent for the guiding layer and was 16 percent for the cladding layers. The process for growing waveguide layers was calibrated primarily by high-energy electron diffraction, with the optical quality confirmed by photoluminescence measurements. Channel waveguide structures having widths of 5 microns were etched in a low-pressure magnetically confined multipolar plasma reactor. The resulting waveguide structures were characterized by Raman spectroscopy, ellipsometry, AES, and optical-waveguide loss measurements.

Radens, C. J.↗
NASA NTRS1988

Formation of the lamellar structure in Group IA and IIID iron meteorites

Analytical EM, light microscopy, and electron microprobe analysis are used to study the lamellar plessite structure of Group IA and IIID iron meteorites. The alpha lamellae in IIID structures contained a compositional gradient from 6.1 + or - 0.7 wt pct Ni at the center of the alpha lamellae to 3.6 + or - 0.5 wt pct at the alpha/gamma interface. For the Group IA irons, compositions of 4 wt pct Ni in alpha and about 48 wt pct Ni in gamma are found. Convergent beam electron diffraction was used to characterize the orientation relations at the alpha/gamma interface in the lamellar regions of both Group IA and IIID. The phase transformations responsible for the observed lamellar structure in the IA and IIID chemical groups were also investigated.

Kowalik, J. A.↗
NASA NTRS1988

Transmission electron microscopy of composites

Since interphase-interfaces are often both the structurally weakest and chemically least stable regions of a composite material, they are critical determinants of such macrostructural characteristics as tensile strength and fracture toughness. Attention is presently given to the use of TEM for the study of interfaces between dissimilar materials; electron-diffraction, analytical, and high-resolution forms of TEM are employed, for the cases of both structural and semiconductor composites. The materials studied are SiC/Si, GaP/Si, and SiC fiber- and whisker-reinforced Si3N4.

Pirouz, P.↗
NASA NTRS1989

Epitaxial growth of InSb (111) on sapphire (0001)

Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, TEM, and SEM data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire, and grows in the 111-line direction. Mobility data show room-temperature mobilities as high as 10,000 sq cm/V s from some regions on the wafer.

Jamison, K. D.↗
NASA NTRS1988

Nucleation and growth of CrSi2 on Si(111)

The nucleation and growth of CrSi2 on Si(111) by MBE and solid-phase epitaxy (SPE), was investigated using SEM and TEM observations of 2-mm-thick layers grown under a variety of conditions, including the use of a CoSi2 buffer. During growth, the wafers were monitored in situ using reflection high-energy electron diffraction. Island growth was observed, with islands found to nucleate with three epitaxial orientations. The morphology of CrSi2 islands was found to be affected by the degree and direction of substrate misorientation, the growth technique, and the use of CoSi2 buffer. However, the reconstruction of the Si surface does not appear to be an important factor in controlling SPE growth.

Fathauer, R. W.↗
NASA NTRS1989

Tin in a chondritic interplanetary dust particle

Submicron platey Sn-rich grains are present in chondritic porous interplanetary dust particle (IDP) W7029 A and it is the second occurrence of a tin mineral in a stratospheric micrometeorite. Selected Area Electron Diffraction data for the Sn-rich grains match with Sn2O3 and Sn3O4. The oxide(s) may have formed in the solar nebula when tin metal catalytically supported reduction of CO or during flash heating on atmospheric entry of the IDP. The presence of tin is consistent with enrichments for other volatile trace elements in chondritic IDPs and may signal an emerging trend toward nonchondritic volatile element abundances in chondritic IDPs. The observation confirms small-scale mineralogical heterogeneity in fine-grained chondritic porous interplanetary dust.

Rietmeijer, Frans J. M.↗
NASA NTRS1990

Review of model sensor studies on Pd/SnO2(110) surfaces

Studies performed at the National Institute of Standards and Technology on the model gas sensor system, Pd/SnO2(110), are reviewed. Adsorption and interfacial effects play a primary role in the gas sensing process, as they do in catalysis. For this reason, researchers have used a variety of surface sensitive techniques in the research, including x ray and ultraviolet photoelectron spectroscopies (XPS and UPS), low energy electron diffraction (LEED), and ion scattering spectroscopy (ISS). By combining these complementary techniques with in situ gas response (conductance) measurements, researchers were able to correlate directly sensor activity with the composition and structure of the Pd/SnO2 interface. Although the intent of this work is to develop an understanding of gas sensing mechanisms, its relevance to Pt/SnO2 catalytic systems is obvious.

Fryberger, Teresa B.↗
NASA NTRS1990

Oxidation characteristics of Ti-14Al-21Nb ingot alloy

Static oxidation kinetics of Ti14Al21Nb (wt pct) ingot alloy were studied in air over the temperature interval of 649 to 1093 C in a thermogravimetric apparatus. The oxidation products were characterized by x ray diffraction, electron microprobe analysis, energy dispersive x ray analysis, and Auger electron spectroscopy. Cross-sections of the oxidized samples were also examined using light and scanning electron microscopy. The oxidation rate was substantially lower than the conventional alloys of titanium, but the kinetics displayed a complex behavior involving two or more oxidation rates depending on the temperature and duration of exposure. The primary oxide formed was TiO2, but this oxide was doped with Nb. Small amounts of Al2O3 and TiN were also present in the scale. Diffusion of oxygen into the alloy was observed and the diffusivity seemed to be dependent on the microstructure of the metal. A model was presented to explain the oxidation behavior of the alloy in terms of the reduction in the oxygen diffusivity in the oxide caused by the modification of the defect structure of TiO2 by Nb ions.

Sankaran, Sankara N.↗
NASA NTRS1990

Diamonds in detonation soot

Diamonds 4 to 7 nm in diameter have been identified and partially isolated from soot formed in detonations of carbon-forming composite explosives. The morphology of the soot has been examined by transmission electron microscopy (TEM), and the identity of the diamond has been established by the electron diffraction pattern of the TEM samples and by the X-ray diffraction (XRD) pattern of the isolated solid. Graphite is also present in the form of ribbons of turbostatic structure with a thickness of 2 to 4 nm. A fraction, about 25 percent of the soot by weight, was recovered from the crude soot after oxidation of the graphite with fuming perchloric acid. This fraction showed a distinct XRD pattern of diamond and the diffuse band of amorphous carbon. The IR spectrum of these diamonds closely matches that of diamonds recovered from meteorites (Lewis et al., 1987), perhaps indicating similar surface properties after the oxidation. If these diamonds are produced in the detonation itself or during the initial expansion, they exhibit a phenomenal crystal growth rate (5 nm/0.00001 s equal 1.8 m/hr) in a medium with a very low hydrogen/carbon ratio. Because the diamonds will be carried along with the expanding gases, they will be accelerated to velocities approaching 8 km/s.

Greiner, N. Roy↗
NASA NTRS1990

Ellipsometric study of InGaAs MODFET material

In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements.

Alterovitz, S. A.↗
NASA NTRS1991

Low-pressure clathrate-hydrate formation in amorphous astrophysical ice analogs

In modeling cometary ice, the properties of clathrate hydrates were used to explain anomalous gas release at large radial distances from the Sun, and the retention of particular gas inventories at elevated temperatures. Clathrates may also have been important early in solar system history. However, there has never been a reasonable mechanism proposed for clathrate formation under the low pressures typical of these environments. For the first time, it was shown that clathrate hydrates can be formed by warming and annealing amorphous mixed molecular ices at low pressures. The complex microstructures which occur as a result of clathrate formation from the solid state may provide an explanation for a variety of unexplained phenomena. The vacuum and imaging systems of an Hitachi H-500H Analytical Electron Microscope was modified to study mixed molecular ices at temperatures between 12 and 373 K. The resulting ices are characterized by low-electron dose Transmission Electron Microscopy (TEM) and Selected Area Electron Diffraction (SAED). The implications of these results for the mechanical and gas release properties of comets are discussed. Laboratory IR data from similar ices are presented which suggest the possibility of remotely observing and identifying clathrates in astrophysical objects.

Blake, D. F.↗
NASA NTRS1990

The structure of carbon in chemically vapor deposited SiC monofilaments

Electron diffraction and high resolution TEM have been used to study the microstructures of C-rich regions in CVD SCS-6 SiC fibers. The reciprocal lattice of such structures, and their diffraction patterns, have been ascertained on the basis of geometrical considerations. While the C microstructures in the substrate filament and the outer coating layers of the fabric are consistent with different distributions of Oberlin's (1989) 'basic structural units', the microstructure of the inner substrate coating is consistent with turbostratic C.

Ning, X. J.↗
NASA NTRS1990

Collection of microparticles at high balloon altitudes in the stratosphere

Stratospheric particles were collected between 34 and 36 km, using a combination of cascade impactors and filters lofted by a large helium balloon, and the particle concentration, size distribution, and bulk elemental composition were determined using SEM and proton-induced X-ray emission (PEXE) instrument. In addition, datailed particle morphology, elemental analysis, and electron diffraction data were obtained on 23 particles using a TEM. The concentration of particles between 0.045 and 1.0 micron in radius was found to be orders of magnitude above the concentrations predicted by the model of Hunten et al. (1980), but was consistent with balloon and satellite observations. Elemental composition analysis showed the presence of Cl, S, Ti, Fe, Br, Ni, Zr, Zn, Sr, and Cu in decreasing order of concentration. The 23 particles analyzed by TEM ranged from Al-rich silicates to almost pure Fe to one containing almost exclusively Ba and S. None were definitely chondritic in composition.

Testa, John P., Jr.↗
NASA NTRS1991

Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

Xing, G. C.↗
NASA NTRS1991

Rapid solidification of polymorphic transition metals induced by nanosecond laser pulses

An Nd-YAG laser giving 5 ns, 266 nm pulses was used to melt and subsequently quench thin, pure metallic films on a liquid Al/Al2O3 substrate at 10 to the 10th - 10 to the 12th K/s. Transmission electron microscopy together with electron diffraction was used to study the competitive nucleation and growth behavior of the crystals from the undercooled melt. In the case of Fe and Co, the high-temperature bcc and fcc structures were retained after laser quenching. Ti and Zr in spite of the structural similarities exhibit different preferences for nucleation from the undercooled melt. In all the metals the solid-state transformations were completely suppressed and the crystal growth was found to be limited by the collisional frequency of the atoms onto the growing interface.

Vitta, Satish↗