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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19

Growing Single-Crystal Sheets by Controlled Cooling

Immersed heating and cooling elements establish desired temperature gradients. Method envisions use of high-pressure, Czochralski crystalgrowth apparatus as presently employed to grow gallium arsenide and gallium phosphide but modified to accept deep crucibles so deep layers of encapsulant used, plus X-ray or optical or sonic-imaging system to observe growth of crystal submerged in encapsulant. Method especially applicable to horizontal growth of ribbons of compound semiconductors.

Morrison, A. D.↗

Highly Non-Linear Optical (NLO) organic crystals

This research project involves the synthesis and characterization of organic materials having powerful nonlinear optical (NLO) properties and the growth of highly ordered crystals and monomolecular films of these materials. Research in four areas is discussed: theoretical design of new materials, characterization of NLO materials, synthesis of new materials and development of coupling procedures for forming layered films, and improvement of the techniques for vapor phase and solution phase growth of high quality organic crystals. Knowledge gained from these experiments will form the basis for experiments in the growth of these crystals.

Harris, J. Milton↗

Boundary-layer transition effects on airplane stability and control

Surface contamination of laminar-flow airfoils can significantly modify the location of transition from laminar-to-turbulent boundary-layer flow. The contamination can be the result of insect debris, environmental effects such as ice crystals and moisture due to mist or rain, surface damage, or other contamination adhering to the surface. Location and mode of transition have a dominant effect on the lift-and-drag characteristics of a lifting surface. The influences of laminar boundary-layer flow behavior on airplane stability and control are examined through theoretical results and experimental (wind-tunnel and free-flight) data. For certain airfoils with a relatively steep pressure recovery it is shown that loss of laminar flow near the leading edge can result in premature separation of the turbulent boundary layer and, consequently, in loss of lift and control effectiveness. Aerodynamic modifications which minimize boundary-layer transition effects on airplane stability and control are also discussed.

Van Dam, C. P.↗

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Choi, Sang↗

Ordered mixed-layer structures in the Mighei carbonaceous chondrite matrix

High resolution transmission electron microscopy of the Mighei carbonaceous chondrite matrix has revealed the presence of a new mixed layer structure material. This mixed-layer material consists of an ordered arrangement of serpentine-type (S) and brucite-type (B) layers in the sequence SBBSBB. Electron diffraction and imaging techniques show that the basal periodicity is approximately 17 A. Discrete crystals of SBB-type material are typically curved, of small size (less than 1 micron) and show structural variations similar to the serpentine group minerals. Mixed-layer material also occurs in association with planar serpentine. Characteristics of SBB-type material are not consistent with known terrestrial mixed-layer clay minerals. Evidence for formation by a condensation event or by subsequent alteration of pre-existing material is not yet apparent.

Mackinnon, I. D. R.↗

Ohmic diode

Process produces linearly responding surface barrier diodes. Hydrogen-fired, conducting strontium titanate crystals provide linear characteristics. The process uses space charge potentials and depletion layer phenomena to achieve conduction and insulation.

Aegerter, S.↗

FEP-Teflon covered solar cell array advancements

Progress is reported on the design and development of lightweight, flexible, FEP encapsulated solar cell modules. Such modules are intended to form standardized building blocks for larger roll-up or fold-up solar cell blankets having specific performance in the order of 100 W/sq m and 80 W/kg in space near earth. Modules are constructed by heat-laminating interconnected 200-micron thick single crystal silicon solar cells with solderless front and back contacts between two layers of clear FEP. The outer FEP layer is 125 microns thick and serves as the solar cell cover material. The inner layer is 50 microns thick and serves as the adhesive between the solar cells and a 25-micron thick loadbearing Kapton substrate sheet.

Rauschenbach, H. S.↗

Etching and Growth of GaAs

In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

Seabaugh, A. C.↗

Laser induced OMCVD growth of AlGaAs on GaAs

A major factor limiting the efficiency of the GaAs-GaAlAs solar cell is the rate of recombination at the GaAs-AlGaAs interface. Evidence has been previously reported which indicates that recombination at this interface can be greatly reduced if the AlGaAs layer is grown at lower than normal temperatures. The authors examine the epitaxial growth of AlGaAs on GaAs using a horizontal OMCVD reactor and an excimer laser operating in the UV (lambda = 193 nm) region. The growth temperatures were 450 and 500 C. The laser beam was utilized in two orientations: 75 deg angle of incidence and parallel to the substrate. Film composition and structure were determined by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). Auger analysis of epilayers grown at 500 C with the laser impinging show no carbon or oxygen contamination of the epitaxial layers or interfaces. TEM diffraction patterns of these same epilayers exhibit single crystal (100) zone axis patterns.

Wilt, David M.↗

Flow-induced morphological instabilities due to temporally-modulated stagnation-point flow

The influence of periodically-modulated planar stagnation-point flow on the morphological stability of a directionally-solidifying interface is presently considered with a view to the effect of unsteady nonparallel flows on single-crystal growth. The modeling of the system assumes that the viscous boundary layer thickness is much greater than that of the solute boundary layer, and that the modulation frequency is much smaller than the strength of plane stagnation-point flow. The solidifying interface is either stabilized or destabilized depending on the ratio of the period of modulation to the solute-diffusion time.

Merchant, G. J.↗

Early History of the Moon: Zircon Perspective

The Moon is believed to have formed from debris produced by a giant impact of a Mars sized body with the Earth (at around 4.51 Ga), forming a primitive body with a thick global layer of melt referred to as the Lunar Magma Ocean (LMO). The crystallization of LMO created internal stratification of the Moon forming main geochemical reservoirs. The surface features on the Moon were shaped by the subsequent collision with several large impactors during a short period of time (3.9-4.0 Ga). This process known as the Late Heavy Bombardment is supported by models of planetary motion, suggesting that rapid migration of giant planets could have triggered a massive delivery of planetesimals from the asteroid belt into the inner Solar System at about 3.9 Ga. Although, general chronology of LMO and LHB is well established using both long lived (U-Pb, Rb-Sr, Sm-147-Nd-143 and Ar-Ar) and extinct (Hf-182-W-182 and 146Sm-142Nd) isotope systems, some of these systems such as Ar-Ar are known to reset easily during secondary thermal overprints. As a result important details in the timing of LMO and LHB remain unresolved. In addition, the relative weakness of these systems under high T conditions can potentially bias the chronological information towards later events in the history of the Moon.

Grange, M.L.↗

Space Research Results Purify Semiconductor Materials

While President Obama's news that NASA would encourage private companies to develop vehicles to take NASA into space may have come as a surprise to some, NASA has always encouraged private companies to invest in space. More than two decades ago, NASA established Commercial Space Centers across the United States to encourage industry to use space as a place to conduct research and to apply NASA technology to Earth applications. Although the centers are no longer funded by NASA, the advances enabled by that previous funding are still impacting us all today. For example, the Space Vacuum Epitaxy Center (SVEC) at the University of Houston, one of the 17 Commercial Space Centers, had a mission to create advanced thin film semiconductor materials and devices through the use of vacuum growth technologies both on Earth and in space. Making thin film materials in a vacuum (low-pressure environment) is advantageous over making them in normal atmospheric pressures, because contamination floating in the air is lessened in a vacuum. To grow semiconductor crystals, researchers at SVEC utilized epitaxy the process of depositing a thin layer of material on top of another thin layer of material. On Earth, this process took place in a vacuum chamber in a clean room lab. For space, the researchers developed something called the Wake Shield Facility (WSF), a 12-foot-diameter disk-shaped platform designed to grow thin film materials using the low-pressure environment in the wake of the space shuttle. Behind an orbiting space shuttle, the vacuum levels are thousands of times better than in the best vacuum chambers on Earth. Throughout the 1990s, the WSF flew on three space shuttle missions as a series of proof-of-concept missions. These experiments are a lasting testament to the success of the shuttle program and resulted in the development of the first thin film materials made in the vacuum of space, helping to pave the way for better thin film development on Earth.

Source record↗

NASA Tech Briefs, February 2004

Topics include: Simulation Testing of Embedded Flight Software; Improved Indentation Test for Measuring Nonlinear Elasticity; Ultraviolet-Absorption Spectroscopic Biofilm Monitor; Electronic Tongue for Quantitation of Contaminants in Water; Radar for Measuring Soil Moisture Under Vegetation; Modular Wireless Data-Acquisition and Control System; Microwave System for Detecting Ice on Aircraft; Routing Algorithm Exploits Spatial Relations; Two-Finger EKG Method of Detecting Evasive Responses; Updated System-Availability and Resource-Allocation Program; Routines for Computing Pressure Drops in Venturis; Software for Fault-Tolerant Matrix Multiplication; Reproducible Growth of High-Quality Cubic-SiC Layers; Nonlinear Thermoelastic Model for SMAs and SMA Hybrid Composites; Liquid-Crystal Thermosets, a New Generation of High-Performance Liquid-Crystal Polymers; Formulations for Stronger Solid Oxide Fuel-Cell Electrolytes; Simulation of Hazards and Poses for a Rocker-Bogie Rover; Autonomous Formation Flight; Expandable Purge Chambers Would Protect Cryogenic Fittings; Wavy-Planform Helicopter Blades Make Less Noise; Miniature Robotic Spacecraft for Inspecting Other Spacecraft; Miniature Ring-Shaped Peristaltic Pump; Compact Plasma Accelerator; Improved Electrohydraulic Linear Actuators; A Software Architecture for Semiautonomous Robot Control; Fabrication of Channels for Nanobiotechnological Devices; Improved Thin, Flexible Heat Pipes; Miniature Radioisotope Thermoelectric Power Cubes; Permanent Sequestration of Emitted Gases in the Form of Clathrate Hydrates; Electrochemical, H2O2-Boosted Catalytic Oxidation System; Electrokinetic In Situ Treatment of Metal-Contaminated Soil; Pumping Liquid Oxygen by Use of Pulsed Magnetic Fields; Magnetocaloric Pumping of Liquid Oxygen; Tailoring Ion-Thruster Grid Apertures for Greater Efficiency; and Lidar for Guidance of a Spacecraft or Exploratory Robot.

Source record↗

Spin Qubits in Germanium Structures with Phononic Gap

We propose qubits based on shallow donor electron spins in germanium structures with phononic gap. We consider a phononic crystal formed by periodic holes in Ge plate or a rigid cover / Ge layer / rigid substrate structure with gaps approximately a few GHz. The spin relaxation is suppressed dramatically, if the Zeeman frequency omegaZ is in the phononic gap, but an effective coupling between the spins of remote donors via exchange of virtual phonons remains essential. If omegaZ approaches to a gap edge in these structures, a long-range (limited by detuning of omegaZ) resonant exchange interaction takes place. We estimate that ratio of the exchange integral to the longitudinal relaxation rate exceeds 10(exp 5) and lateral scale of resonant exchange 0.1 mm. The exchange contribution can be verified under microwave pumping through oscillations of spin echo signal or through the differential absorption measurements. Efficient manipulation of spins due to the Rabi oscillations opens a new way for quantum information applications.

Qubit↗

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

This report concerns studies of the use of ZnSe as a window layer for GaAs solar cells. Well-oriented crystalline ZnSe films on (100) single crystal GaAs substrates were grown by MOCVD. In particular, ZnSe films were grown by reacting a zinc adduct with hydrogen selenide at temperatures in the range of 200 C to 400 C. X-ray diffraction studies and images obtained with an atomic force microscope determined that the films were highly oriented but were polycrystalline. Particular emphasis was placed on the use of a substrate temperature of 350 C. Using iodine as a dopant, n-type ZnSe films with resistivities in the range of .01 to .05 ohm-cm were grown on semi-insulating GaAs. Thus procedures have been developed for investigating the utility of n-type ZnSe window layers on n/p GaAs structures. Studies of recombination at n-ZnSe/n-GaAs interfaces in n-ZnSe/n-GaAs/p-GaAs cell structures are planned for future work.

Olsen, Larry C.↗

Convective Generation of Cirrus Near the Tropopause

The July 2004 CRYSTAL-FACE field program, based from Key West, Florida, showed that long-lived thin tropopause cirrus (TTC) layers were common above thunderstorm anvils. This paper investigates the origins of these cloud using airborne measurements. The horizontal dimensions of the TTC were nearly identical to the convectively formed anvil beneath. However, the TTC did not appear to have originated from convective detrainment. Rather it appears to have formed in stably stratified air derived from high altitudes near the tropopause. The TTC was separated from the anvil by approx. 1 km, it lacked precipitation particles, and it was strongly depleted in HDO. Nonetheless, compared to surrounding clear air near the tropopause, the TTC was enriched in moisture and trace gases in a manner consistent with it having mixed with the same convective airmass that produced the anvil. Unlike surrounding air, the TTC had embedded a monochromatic gravity wave with a wavelength of 2 km and an amplitude of several hundred meters. Combined, this evidence, supported by a photograph from CRYSTAL-FACE, leads to the conjecture that the TTC originated as a pileus cloud layer, which formed near the tropopause ahead of vigorous convective uplift. We hypothesize that the pileus was penetrated by the convection, moistened through mixing, and once the convection subsided, it was sustained by radiative cooling due to the presence of the anvil layer beneath.

Garrett, T. J.↗

Extended-Range Ultrarefractive 1D Photonic Crystal Prisms

A proposal has been made to exploit the special wavelength-dispersive characteristics of devices of the type described in One-Dimensional Photonic Crystal Superprisms (NPO-30232) NASA Tech Briefs, Vol. 29, No. 4 (April 2005), page 10a. A photonic crystal is an optical component that has a periodic structure comprising two dielectric materials with high dielectric contrast (e.g., a semiconductor and air), with geometrical feature sizes comparable to or smaller than light wavelengths of interest. Experimental superprisms have been realized as photonic crystals having three-dimensional (3D) structures comprising regions of amorphous Si alternating with regions of SiO2, fabricated in a complex process that included sputtering. A photonic crystal of the type to be exploited according to the present proposal is said to be one-dimensional (1D) because its contrasting dielectric materials would be stacked in parallel planar layers; in other words, there would be spatial periodicity in one dimension only. The processes of designing and fabricating 1D photonic crystal superprisms would be simpler and, hence, would cost less than do those for 3D photonic crystal superprisms. As in 3D structures, 1D photonic crystals may be used in applications such as wavelength-division multiplexing. In the extended-range configuration, it is also suitable for spectrometry applications. As an engineered structure or artificially engineered material, a photonic crystal can exhibit optical properties not commonly found in natural substances. Prior research had revealed several classes of photonic crystal structures for which the propagation of electromagnetic radiation is forbidden in certain frequency ranges, denoted photonic bandgaps. It had also been found that in narrow frequency bands just outside the photonic bandgaps, the angular wavelength dispersion of electromagnetic waves propagating in photonic crystal superprisms is much stronger than is the angular wavelength dispersion obtained by use of conventional prisms and diffraction gratings and is highly nonlinear.

Ting, David Z.↗