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Results for “modulation doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

DNA-mediated excitonic upconversion FRET switching

Excitonics is a rapidly expanding field of nanophotonics in which the harvesting of photons, ensuing creation and transport of excitons via Förster resonant energy transfer (FRET), and subsequent charge separation or photon emission has led to the demonstration of excitonic wires, switches, Boolean logic and light harvesting antennas for many applications. FRET funnels excitons down an energy gradient resulting in energy loss with each step along the pathway. Conversely, excitonic energy up conversion via up conversion nanoparticles (UCNPs), although currently inefficient, serves as an energy ratchet to boost the exciton energy. Although FRET-based up conversion has been demonstrated, it suffers from low FRET efficiency and lacks the ability to modulate the FRET. We have engineered an up conversion FRET-based switch by combining lanthanide-doped UCNPs and fluorophores that demonstrates excitonic energy up conversion by nearly a factor of 2, an excited state donor to acceptor FRET efficiency of nearly 25%, and an acceptor fluorophore quantum efficiency that is close to unity. These findings offer a promising path for energy up conversion in nanophotonic applications including artificial light harvesting, excitonic circuits, photovoltaics, nanomedicine, and optoelectronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Low-energy phonons in Bi 2 Sr 2 CaCu 2 O 8 + δ and their possible interaction with electrons measured by inelastic neutron scattering

Electron-phonon interaction in copper oxide superconductors is still enigmatic. Strong coupling for certain optic phonons is now well established experimentally, but theoretical understanding is challenging. Scattering of electrons near the Fermi surface by the longitudinal acoustic (LA) phonons is expected from basic theory because these phonons modulate electron density. We used inelastic neutron scattering on a large single crystal sample of optimally-doped Bi 2 Sr 2 CaCu 2 O 8+δ to show that low-energy LA phonons could couple to electronic density fluctuations only at small phonon wavevectors, which naturally limits any interaction to forward scattering. Such scattering should not be pairbreaking in the case of the d-wave gap. We also found that previously reported low energy phonon spectral weight half-way to the zone boundary is consistent with conventional lattice dynamics and does not reflect incipient charge density wave (CDW).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Superconductivity in the doped Hubbard model and its interplay with next-nearest hopping t ′

The Hubbard model is widely believed to contain the essential ingredients of high-temperature superconductivity. However, proving definitively that the model supports superconductivity is challenging. Here, we report a large-scale density matrix renormalization group study of the lightly doped Hubbard model on four-leg cylinders at hole doping concentration δ = 12.5%. We reveal a delicate interplay between superconductivity and charge density wave and spin density wave orders tunable via next-nearest neighbor hopping t ′. For finite t ′, the ground state is consistent with a Luther-Emery liquid with power-law superconducting and charge density wave correlations associated with half-filled charge stripes. In contrast, for t ′ = 0, superconducting correlations fall off exponentially, whereas charge density and spin density modulations are dominant. Our results indicate that a route to robust long-range superconductivity involves destabilizing insulating charge stripes in the doped Hubbard model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Xenon doping of Liquid Argon in ProtoDUNE Single Phase: first results

Doping Liquid Argon (LAr) with xenon is a known technique to shift the light emitted by argon (128 nm) to a longer wavelength to ease its detection. The largest Xenon doping test ever performed in a LArTPC was carried out in ProtoDUNE Single Phase (ProtoDUNE-SP) at the CERN Neutrino Platform. The response of such a large TPC (7701 of Liquid Argon and 4401 of fiducial mass) has been studied using the ProtoDUNE Photon Detection System (PDS) and a dedicated setup installed before the run. With the first, it was possible to study the light detected in the system as a function of the xenon concentration and to characterise the light collection efficiency with respect to the track position. With the second system it was possible to disentangle the LAr (128 nm) light from the xenon (178 nm) light using two dedicated X-ARAPUCA modules. The run was fully satisfactory, it was possible to measure directly the increase of the xenon light component during doping; furthermore most of the LAr light quenched by impurities was fully recovered even at small Xenon concentration (< 20 ppm in mass). A study of the collected scintillation light as a function of the track position showed an improvement of the detector response uniformity.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Tuning 2D magnetism in Fe 3+X GeTe 2 films by element doping

Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature (T C ) or phase transitions. One of the challenges, however, is the realization of high T C 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe 3+X GeTe 2 films with T C above room temperature. By controlling the Fe composition in Fe 3+X GeTe 2 , a continuously modulated T C in a broad range of 185–320 K has been achieved. This widely tunable T C is attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe 3+X GeTe 2 fashion.

2D ferromagnetic material↗
DOE OSTI2018

Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping

Abstract Thin film materials for photovoltaics such as cadmium telluride (CdTe), copper-indium diselenide-based chalcopyrites (CIGS), and lead iodide-based perovskites offer the potential of lower solar module capital costs and improved performance to microcrystalline silicon. However, for decades understanding and controlling hole and electron concentration in these polycrystalline films has been extremely challenging and limiting. Ionic bonding between constituent atoms often leads to tenacious intrinsic compensating defect chemistries that are difficult to control. Device modeling indicates that increasing CdTe hole density while retaining carrier lifetimes of several nanoseconds can increase solar cell efficiency to 25%. This paper describes in-situ Sb, As, and P doping and post-growth annealing that increases hole density from historic 10 14 limits to 10 16 –10 17 cm −3 levels without compromising lifetime in thin polycrystalline CdTe films, which opens paths to advance solar performance and achieve costs below conventional electricity sources.

14 SOLAR ENERGY↗
DOE OSTI2011

Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the n-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori doping of n-TiNiSn with donors originates from partial, up to 0.5 at %, redistribution of Ti and Ni atoms in crystallographic sites of Ti atoms. The correlation is established between the donor concentration, amplitude of modulation of the continuous energy bands, and degree of filling of low-scale fluctuation potential wells with charge carriers. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and compensated semiconductor.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Light-controlled electric Freedericksz threshold in dye doped liquid crystals

We report the results of measurements of the threshold of Freedericksz transition in a nematic liquid crystal doped by Methyl-red. We show that in case of dc field the threshold voltage can decrease or increase depending on the light dose, due to the light-induced desorption and adsorption of charge complexes from and on the irradiated surface, that has been recently demonstrated. This effect has the potential to be exploited in optical devices such as liquid crystal microlenses and spatial light modulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Heteroatom anchoring to enhance electrochemical reversibility for high-voltage P2-type oxide cathodes of sodium-ion batteries

P2-type cathode has received extensive attention due to its faster Na+ diffusion and a high theoretical capacity in sodium-ion batteries (SIBs). However, undesirable phase transformations have induced dramatic capacity decay of SIBs during the cycling process. In this study, heteroatom anchoring through Cu/Mg dual doping is introduced into P2-type Na 0.67 Ni 0.33 Mn 0.67 O 2 cathode to enhance high-voltage electrochemical reversibility and modulate interfacial Na + kinetics. Further, the as-prepared Na 0.67 Ni 0.23 Mg 0.05 Cu 0.05 Mn 0.67 O 2 exhibits an outstanding capacity retention (83.4% after 2000 cycles at 10C) and rate performance (73 mAh g -1 at 10C, accounting for 58.7% of that at 0.1 C) over the voltage range of 2.5–4.4 V. Intensive explorations further manifest that the modified mechanism of dual-ion doping strategy is attributed to the synergistic coupling effect of a substantial change in Na occupancy distribution and an increase in oxygen vacancy buffer. Thus, the optimized cathode expedites Na + diffusion and reduces detrimental phase transformation, which favors high-rate performance and long-term cycling stability. This study develops a route to rationally design high-voltage cathode materials for SIBs.

25 ENERGY STORAGE↗
DOE OSTI2014

The enhanced spontaneous dielectric polarization in Ga doped CuFeO{sub 2}

The magnetic and dielectric polarization properties of the single crystal samples of CuFe{sub 1−x}Ga{sub x}O{sub 2} (x = 0 and 0.02) are investigated. Experimental results show that the magnetization and dielectric polarizations are anisotropy and coupled together. Compared with pure CuFeO{sub 2}, in the case with the magnetic field parallel to the c axis, a field-induced phase transition with a hysteresis is clearly observed between the five-sublattice (5SL) and three-sublattice (3SL) phases. Specially, an obvious spontaneous dielectric polarization is observed in CuFe{sub 0.98}Ga{sub 0.02}O{sub 2} in a lower magnetic field region, indicating that the Ga doping has an effect on the enhancement of spontaneous dielectric polarization. Based on the dilution effect, change of exchange interaction, and partial release of the spin frustration due to the structural modulation of the Ga ion dopant, the origin of the magnetization, and spontaneous polarization characteristics are discussed and the complete dielectric polarization diagrams are assumed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

A Two-Dimensional MoS 2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA)

A variety of methods including tuning chemical compositions, structures, crystallinity, defects and strain, and electrochemical intercalation have been demonstrated to enhance the catalytic activity. However, none of these tuning methods provide direct dynamical control during catalytic reactions. Here we propose a new method to tune the activity of catalysts through solid-state ion gating manipulation and adjustment (SIGMA) using a catalysis transistor. SIGMA can electrostatically dope the surface of catalysts with a high electron concentration over 5 × 10 13 cm –2 and thus modulate both the chemical potential of the reaction intermediates and their electrical conductivity. The hydrogen evolution reaction (HER) on both pristine and defective MoS 2 were investigated as model reactions. Furthermore, our theoretical and experimental results show that the overpotential at 10 mA/cm 2 and Tafel slope can be in situ, continuously, dynamically, and reversibly tuned over 100 mV and around 100 mV/dec, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Microscopic Theory of Pair Density Waves in Spin-Orbit Coupled Kondo Lattice

We demonstrate that the discommensuration between the Fermi surfaces of a conduction sea and an underlying spin liquid provides a natural mechanism for the spontaneous formation of pair density waves. Using a recent formulation of the Kondo lattice model that incorporates a Yao Lee spin liquid proposed by the authors, we demonstrate that doping away from half filling induces finite-momentum electron-Majorana pair condensation, resulting in amplitude-modulated pair density waves (PDWs). Our approach provides a precise, analytically tractable pathway for understanding the spontaneous formation of PDWs in higher dimensions and offers a natural mechanism for PDW formation in the absence of Zeeman splitting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ultranarrow bandwidth pulses from a regeneratively mode-locked fiber laser

We report on the generation of transform-limited nanosecond pulse with an ultranarrow bandwidth from a regeneratively mode-locked erbium-doped fiber laser. A narrow bandwidth fiber Bragg grating is combined with a bulk amplitude electro-optic modulator to shape pulse evolution inside a ring cavity, and regenerative mode locking is applied to produce a stationary shape of pulses in the nanosecond regime (2.05 ns in duration). Spectral characterization via high bandwidth optoelectronic devices shows that optical pulses have an ultranarrow bandwidth of 220 MHz. Numerical simulation reveals that the shape of the narrow spectral filter has a strong effect on the duration and bandwidth of output pulses.

43 PARTICLE ACCELERATORS↗
DOE OSTI2011

Response to dynamical modulation of the optical lattice for fermions in the Hubbard model

Fermionic atoms in a periodic optical lattice provide a realization of the single-band Hubbard model. Using quantum Monte Carlo simulations along with the maximum-entropy method, we evaluate the effect of a time-dependent perturbative modulation of the optical lattice amplitude on atomic correlations, revealed in the fraction of doubly occupied sites. We find that the effect of modulation depends strongly on the filling--the response of the double occupation is significantly different in the half-filled Mott insulator from that in the doped Fermi liquid region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Single-walled carbon nanotube tunable mode-locked soliton fibre laser

A soliton fibre laser with a tunable mode-locked output is proposed and demonstrated. The laser is based on a conventional erbium-doped fibre and uses single-walled carbon nanotubes (SWCNTs) as a saturable absorber (SA). Tuning is performed using a tunable Mach – Zehnder filter (TMZF). The SWCNT-based SA has a modulation depth of ∼19.0 % and saturation intensity of 45.3 MW cm{sup −2}. Mode-locking begins at a pump power of 6.0 mW and allows pulsed outputs to be generated from 1550 nm to 1566 nm. The 3 dB bandwidth and pulse duration of the output pulse vary slightly from 6.34 nm to 6.90 nm and from 0.51 ps to 0.56 ps, respectively, which results in the corresponding time-bandwidth product varying from 0.40 to 0.46. The results suggest that the proposed laser would have significance advantages in many applications, particularly spectroscopy and telecommunications. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide

Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low-loss modulators and all-optical switches due to their tunable optical properties, fast optical response, and low losses. Here, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid-infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y-concentrations is observed. Broadband all-optical switching from near-infrared to mid-infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. Our report could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid-infrared region.

42 ENGINEERING↗
DOE OSTI2015

Threshold-voltage modulated phase change heterojunction for application of high density memory

Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗