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At least 343 records · Page 19

All sources NASA NTRS DOE OSTI

DOE OSTI2022

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. Here we report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 (O,S) 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1984

The 40 X 80 X 120 Wind Tunnel Project

The scope of this project includes increasing the speed of the 40 x 80 x 120 foot closed circuit wind tunnel to 300 knots to expand rotorcraft research capability, and to add an 80 x 120 foot open circuit wind tunnel with 100 knot maximum speed to expand vertical supersonic takeoff and landing research and capability. Topics discussed in viewgraph format are: wind tunnel characteristics, a cost analysis, and design of wind tunnel models.

Falarski, Michael D.↗

DOE OSTI2022

Correlating Electronic Structure and Device Physics with Mixing Region Morphology in High-Efficiency Organic Solar Cells

The donor/acceptor interaction in non-fullerene organic photovoltaics leads to the mixing domain that dictates the morphology and electronic structure of the blended thin film. Initiative effort is paid to understand how these domain properties affect the device performances on high-efficiency PM6:Y6 blends. Different fullerenes acceptors are used to manipulate the feature of mixing domain. It is seen that a tight packing in the mixing region is critical, which could effectively enhance the hole transfer and lead to the enlarged and narrow electron density of state (DOS). As a result, short-circuit current (J SC ) and fill factor (FF) are improved. The distribution of DOS and energy levels strongly influences open-circuit voltage (V OC ). The raised filling state of electron Fermi level is seen to be key in determining device V OC . Energy disorder is found to be a key factor to energy loss, which is highly correlated with the intermolecular distance in the mixing region. A 17.53% efficiency is obtained for optimized ternary devices, which is the highest value for similar systems. The current results indicate that a delicate optimization of the mixing domain property is an effective route to improve the V OC , J SC , and FF simultaneously, which provides new guidelines for morphology control toward high-performance organic solar cells.

36 MATERIALS SCIENCE↗

NASA NTRS1980

High temperature properties of GaAlAs/GaAs heteroface solar cells

The properties of p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells were determined in the temperature range from 25 C to 350 C. Illumination air mass zero (AM0) current-voltage measurements show that the short circuit current increases as a function of temperature up to 210 C and then decreases up to 350 C. The open circuit voltage and fill factor decrease linearly with increasing temperature. The spectral response shifts toward higher wavelengths with increasing temperature.

Walker, G. H.↗

NASA NTRS1982

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Ho, C.-T.↗

NASA NTRS1983

Digital Single-Phase Power-Factor Controller

Digital circuit has faster response to load changes. Digital power-factor controller senses changing motor-load torques by sampling open-circuit voltage across gate-controlled silicon switch. Circuit responds more rapidly to hanging loads than analog power-factor controllers because no low-pass filter is in feedback loop.

Dabney, R. W.↗

NASA NTRS2003

Analysis of ProSEDS Test of Bare-Tether Collection

NASA's tether experiment ProSEDS will be placed in orbit on board a Delta-II rocket to test bare-tether electron collection, deorbiting of the rocket second stage, and the system dynamic stability. ProSEDS performance will vary because ambient conditions change along the orbit and tether-circuit bulk elements at the cathodic end follow the step-by-step sequence for the current cycles of operating modes (open-circuit, shunt and resistor modes for primary cycles; shunt and battery modes for secondary cycles). In this work we discuss expected ProSEDS values of the ratio L,/L*, which jointly with cathodic bulk elements determines bias and current tether profiles; L, is tether length, and L* (changing with tether temperature and ionospheric plasma density and magnetic field) is a characteristic length gauging ohmic versus baretether collection impedances. We discuss how to test bare-tether electron collection during primary cycles, using probe measurements of plasma density, measurements of cathodic current in resistor and shunt modes, and an estimate of tether temperature based on ProSEDS orbital position at the particular cycle concerned. We discuss how a temperature misestimate might occasionally affect the test of bare-tether collection, and how introducing the battery mode in some primary cycles, for an additional current measurement, could obviate the need of a temperature estimate. We also show how to test bare-tether collection by estimating orbit-decay rate from measurements of cathodic current for the shunt and battery modes of secondary cycles.

Sanmartin, J. R.↗

NASA NTRS1989

Cable coupling lightning transient qualification

Simulated lightning strike testing of instrumentation cabling on the redesigned solid rocket motor was performed. Testing consisted of subjecting the lightning evaluation test article to simulated lightning strikes and evaluating the effects of instrumentation cable transients on cables within the system tunnel. The maximum short-circuit current induced onto a United Space Boosters, Inc., operational flight cable within the systems tunnel was 92 A, and the maximum induced open-circuit voltage was 316 V. These levels were extrapolated to the worst-case (200 kA) condition of NASA specification NSTS 07636 and were also scaled to full-scale redesigned solid rocket motor dimensions. Testing showed that voltage coupling to cables within the systems tunnel can be reduced 40 to 90 dB and that current coupling to cables within the systems tunnel can be reduced 30 to 70 dB with the use of braided metallic sock shields around cables that are external to the systems tunnel. Testing also showed that current and voltage levels induced onto cables within the systems tunnel are partially dependant on the cables' relative locations within the systems tunnel. Results of current injections to the systems tunnel indicate that the dominant coupling mode on cables within the systems tunnel is not from instrumentation cables but from coupling through the systems tunnel cover seam apertures. It is recommended that methods of improving the electrical bonding between individual sections of the systems tunnel covers be evaluated. Further testing to better characterize redesigned solid rocket motor cable coupling effects as an aid in developing methods to reduce coupling levels, particularly with respect to cable placement within the systems tunnel, is also recommended.

Cook, M.↗

NASA NTRS1991

Investigations of detail design issues for the high speed acoustic wind tunnel using a 60th scale model tunnel. Part 2: Tests with the closed circuit

This report summarizes the tests on the 1:60 scale model of the High Speed Acoustic Wind Tunnel (HSAWT) performed during the period June - August 1991. Throughout the testing the tunnel was operated in the 'closed circuit mode,' that is when the airflow was set up by an axial flow fan, which was located inside the tunnel circuit and was directly driven by a motor. The tests were first performed with the closed test section and were subsequently repeated with the open test section, the latter operating with the nozzle-diffuser at its optimum setting. On this subject, reference is made to the report (1) issued January 1991, under contract 17-GFY900125, which summarizes the result obtained with the tunnel operating in the 'open circuit mode.' The tests confirmed the viability of the tunnel design, and the flow distributions in most of the tunnel components were considered acceptable. There were found, however, some locations where the flow distribution requires improvement. This applies to the flow upstream of the fan where the flow was found skewed, thus affecting the flow downstream. As a result of this, the flow appeared separated at the end of the large diffuser at the outer side. All tests were performed at NASA LaRC.

Barna, P. Stephen↗

DOE OSTI2022

Investigating Local Carrier Dynamics in PERC Patterned CdTe Solar Cells

Remarkable progress has been achieved in CdTe photovoltaics (PVs) to further improve cell performance while reducing manufacturing costs. Researchers optimized the front contact that leads the short-circuit current density (J sc ) over 31mA/cm 2 (e.g., (Zn, Mg)O buffer layer and/or alloying CdTe with Se). Reese et al. reported an open-circuit voltage (V oc ) over 1 V with group-V doped single crystal, showing the feasibility of increasing V oc in CdTe PV that is fixed to less than 900 mV in most cases. Recent studies suggested that the V oc improvement in polycrystalline CdTe PVs requires well-passivated back contact. One possible strategy is to use CdMgTe alloy (E g > 1.8 eV), where the band-gap offset (ΔE CB ≈ 0.2 eV) reflects minority carrier electrons, thereby decreasing surface recombination. Another strategy is to utilize a stable Al 2 O 3 layer as an electron reflector; experimental works confirmed the improved performance with a conformal Al 2 O 3 layer. In this configuration, the precise control of Al 2 O 3 (≈1 nm) over the entire CdTe layer is essential because the J sc greatly depends on the tunneling current. While promising, both CdMgTe and Al 2 O 3 passivation on CdTe introduce unfavorable valence band offset that blocks the hole transport. Kephart et al. proposed a patterned passixc vation layer (≈ 20 nm Al 2 O 3 ) with point contacts (≈ 3 μm in diameter) that extract hole carriers. This configuration is similar to the passive emitter and rear contact (PERC) design that has been extensively studied in Si PVs. While remarkably high carrier lifetime and photoluminescence (> 10 X) were measured, consistent improvement in V oc and efficiency in this CdTe PERC were not yet observed. At this time, it is unclear how the surface potential is distributed in the presence of patterned Al 2 O 3 reflectors and how this additional field impacts the PV performance for Cu-doped and group-V doped CdTe PERC devices. To tackle this challenge, we develop robust nanofabrication and characterization platform to study CdTe PERC devices consisting of a patterned Al 2 O 3 layer on CdSe( 1-x )Te x (Cu-doped, GrV-doped; x = 0 to 1; CST). First Solar supplies high-quality CST materials. The dark and light I-Vs under 1-sun illumination are extracted for a series of each set of devices. We perform quantitative and qualitative PV analysis for a series of Cu-doped and Gr-V doped PERC devices, showing notably different V oc changes for GrV-doped compared to Cu-doped PERC devices. This project attempts to produce individual contacts on single grains and grain boundaries to measure lateral transport. As a model system, we use a CdSe( 1-x )Te x film on glass prepared by a colossal grain growth (CGG) technique at National Renewable Research Laboratories (NREL). Our preliminary results confirm that intergranular transport is hindered by the electrical barrier formed near grain boundaries. The PERC fabrication and the lateral transport measurement platform developed in this project can easily be applied to other types of advanced CdSe( 1-x )Te x architectures to better understand local photocarrier transport, in turn, providing the fundamental knowledge to improve the performance of CdTe PVs.

14 SOLAR ENERGY↗

NASA NTRS1978

Preliminary results on the conversion of laser energy into electricity

A preliminary experiment was performed to investigate conversion of 10.6 micron laser energy to electrical energy via a laser-sustained argon plasma. Short-circuit currents of 0.7 A were measured between a thoriated-tungsten emitter and collector electrodes immersed in the laser-sustained argon plasma. Open-circuit voltages of about 1.5 V were inferred from the current-voltage load characteristics. The dominant mechanism of laser energy conversion is uncertain at this time. Much higher output powers appear possible.

Thompson, R. W.↗

NASA NTRSDate not supplied

Analysis of a Dynamic Flexed Flat Cable Harness

A dynamic flex test was performed on a spacecraft instrument harness composed of multiple individual flex cables, with each flex cable containing multiple copper traces. The purpose of the test was to demonstrate the capability of the harness to survive the number of expected flex cycles during the planned mission with appropriate margin. However, during testing, increased trace resistances and open circuits were observed beginning at approximately 10% of the total number of planned flex cycles. This paper discusses the various proximate causes that contributed to increased and open resistance in the flex cables and the subsequent redesign, manufacturing, reliability, and quality-related changes that were instituted. An analysis process, including failure analysis, non-destructive evaluation, digital imaging correlation, and parametric modeling, will also be discussed. The paper will cover the development of a robust dynamic flex harness design and include recommendations to extend flex harness life; make changes to the flex harness life test; and improve flex cable manufacturing, quality, and reliability.

Flexible PCB↗

NASA NTRSDate not supplied

Analysis of a Dynamic Flexed Flat Cable Harness

Flexible PCB↗

DOE OSTI2020

Enhanced hindrance from phenyl outer side chains on nonfullerene acceptor enables unprecedented simultaneous enhancement in organic solar cell performances with 16.7% efficiency

Inner side-chain engineering on Y6 has been a proven successful in improving short-circuit current density (JSC) through fine-tuning aggregated structures of acceptors. However, it fails in tuning the lowest unoccupied molecular orbital level (LUMO) and open-circuit voltage (V OC ). In this paper, we turn to focus on engineering the outer side chains on the flanking thienothiophene units with 4-hexylphenyl (PhC6) and 6-phenylhexyl (C6Ph) chains. Use of PhC6 enhances the steric effect between the attached phenyl and the ending group, which in combination with the additional conjugation effect provided by the linking phenyl leads to upshifted energy levels and increased V OC as a result. Again, substitution with the bulkier PhC6 unprecedentedly improves film-morphology with reduced paracrystalline disorder and long period and increased root-mean-square composition variations as well, leading to increased electron and hole mobilities and suppressed monomolecular recombination with J SC and fill-factor (FF) simultaneously enhanced. The PM6:BTP-PhC6-based devices yield a higher efficiency value of 16.7% than the PM6:BTP-C6Ph-based one (15.5%). Furthermore, this study shows a conceptual advance in materials design towards reducing the conflict between V OC and J SC in binary blended organic solar cells, which can be achieved by introducing bulkier chains to twist the backbone and simultaneously enhance the packing order.

14 SOLAR ENERGY↗

DOE OSTI2024

Development of an Optical Library for Coevaporated CdSe x Te 1– x

The conversion efficiency of CdTe solar cells may be improved by bandgap engineering, i.e., changing the bandgap value through the addition of Se in the absorber. The Se alloying enables a short-circuit current density improvement, as it leads to a bandgap energy value decrease. Furthermore, it has been associated with increased minority carrier lifetimes, assuring high open-circuit voltage values. An Se gradient profile control can further optimize the solar cell performance. Thus, an optical model baseline of the CdSe x Te 1–x (CST) compound was developed. Spectroscopic ellipsometry measurements were conducted to accurately extract the optical constants of ten CST layers deposited through coevaporation with x varying from 0 to 1. Using the measured dielectric function spectra from the discrete CST layers with varying x, and considering the composition-induced shift in the critical point energies, an energy-shift model was employed to develop the accurate optical library for the CST compound for any x value to provide data for future modeling and optimization. Furthermore, the library accuracy was validated through optical simulations of the quantum efficiency of a graded CST solar cell using the finite-difference time-domain method by replicating the Se profile in the absorber layer measured through secondary ion mass spectrometry.

14 SOLAR ENERGY↗

NASA NTRS1980

Conductive surge testing of circuits and systems

Techniques are given for conductive surge testing of powered electronic equipment. The correct definitions of common and normal mode are presented. Testing requires not only spike-surge generators with a suitable range of open-circuit voltage and short-circuit current waveshapes, but also appropriate means, termed couplers, for connecting test surges to the equipment under test. Key among coupler design considerations is minimization of fail positives resulting from reduction in delivered surge energy due to the coupler. Back-filters and the lines on which they are necessary, are considered as well as ground-fault and ground potential rise. A method for monitoring delivered and resulting surge waves is mentioned.

Richman, P.↗

NASA NTRS1981

The NATO III 5 MHz Distribution System

A high performance 5 MHz distribution system is described which has extremely low phase noise and jitter characteristics and provides multiple buffered outputs. The system is completely redundant with automatic switchover and is self-testing. Since the 5 MHz reference signals distributed by the NATO III distribution system are used for up-conversion and multiplicative functions, a high degree of phase stability and isolation between outputs is necessary. Unique circuit design and packaging concepts insure that the isolation between outputs is sufficient to quarantee a phase perturbation of less than 0.0016 deg when other outputs are open circuited, short circuited or terminated in 50 ohms. Circuit design techniques include high isolation cascode amplifiers. Negative feedback stabilizes system gain and minimizes circuit phase noise contributions. Balanced lines, in lieu of single ended coaxial transmission media, minimize pickup.

Vulcan, A.↗

DOE OSTI2021

Boundary conditions manipulation of polar vortex domains in BiFeO 3 membranes via phase-field simulations

Polar vortex domains have recently become an emergent research field due to the abundant physical phenomena and potential applications in high-density memories. Here, we explore the mechanisms of creating polar vortex domains in the BiFeO3 (BFO) membranes subjected to different boundary conditions using phase-field simulations. A major difference is that the vortex in membrane can be stabilized even under short-circuit electrical boundary conditions compared to vortex in other systems, such as thin film or superlattice. We found that (a) the formation of polar vortex domains at the membrane interior under bending is mainly driven by the reduction of elastic energy under short-circuit boundary condition, and the vortex chirality (namely, clockwise and counterclockwise) could be identified by n-shape and u-shape bending; (b) in the unbent open-circuit BFO membrane case, exotic trapezoid-shaped vortex nanodomains form at the terminations of 109 degrees domain walls (DWs) and partially charged 71 degrees DWs, which is driven by the local depolarization field and the interplay among electrostatic, elastic, and gradient and Landau energies. We also examine Kittel's law by establishing the dependence of vortex periods on the membrane thickness. Furthermore, these results give further understanding of the effect of boundary conditions on the formation of polar vortex domains, guiding experimental designs of vortex-based high-density memories.

36 MATERIALS SCIENCE↗