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We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACS), among others.
Transparent, conductive thin-film coatings have many potential applications where a surface must be able to dissipate electrical charges without sacrificing its optical properties. Such applications include automotive and aircraft windows, heat mirrors, optoelectronic devices, gas sensors, and solar cell array surfaces for space applications. Many spacecraft missions require that solar cell array surfaces dissipate charges in order to avoid damage such as electronic upsets, formation of pinholes in the protective coatings on solar array blankets, and contamination due to deposition of sputtered products. In tests at the NASA Lewis Research Center, mixed thin-films of sputter-deposited indium tin oxide (ITO) and magnesium fluoride (MgF2) that could be tailored to the desired sheet resistivity, showed transmittance values of greater than 90 percent. The samples evaluated were composed of mixed, thin-film ITO/MgF2 coatings, with a nominal thickness of 650 angstroms, deposited onto glass substrates. Preliminary results indicated that these coatings were durable to vacuum ultraviolet radiation and atomic oxygen. These coatings show promise for use on solar array surfaces in polar low-Earth-orbit environments, where a sheet resistivity of less than 10(exp 8)/square is required, and in geosynchronous orbit environments, where a resistivity of less than 10(exp 9)/square is required.
The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.
Our overall intent in this aspect of the project were to establish a collaborative effort between several departments at Montana State University for developing advanced optoelectronic technology for advancing the state-of-the-art in optical remote sensing of the environment. Our particular focus was on development of small systems that can eventually be used in a wide variety of applications that might include ground-, air-, and space deployments, possibly in sensor networks. Specific objectives were to: 1) Build a field-deployable direct-detection lidar system for use in measurements of clouds, aerosols, fish, and vegetation; 2) Develop a breadboard prototype water vapor differential absorption lidar (DIAL) system based on highly stable, tunable diode laser technology developed previously at MSU. We accomplished both primary objectives of this project, in developing a field-deployable direct-detection lidar and a breadboard prototype of a water vapor DIAL system. Paper summarizes each of these accomplishments.
We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to- Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others. T
Optical air flow measurements can support the testing of aircraft and can be instrumental to in-flight investigations of the atmosphere or atmospheric phenomena. Furthermore, optical air flow meters potentially contribute as avionics systems to flight safety and as air data systems. The qualification of these instruments for the flight environment is where we encounter the systems in flight testing. An overview is presented of different optical air flow measurement techniques applied in flight and what can be achieved with the techniques for flight test purposes is reviewed. All in-flight optical airflow velocity measurements use light scattering. Light is scattered on both air molecules and aerosols entrained in the air. Basic principles of making optical measurements in flight, some basic optical concepts, electronic concepts, optoelectronic interfaces, and some atmospheric processes associated with natural aerosols are reviewed. Safety aspects in applying the technique are shortly addressed. The different applications of the technique are listed and some typical examples are presented. Recently NASA acquired new data on mountain rotors, mountain induced turbulence, with the ACLAIM system. Rotor position was identified using the lidar system and the potentially hazardous air flow profile was monitored by the ACLAIM system.
Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.
We describe an asynchronous, strictly non-blocking crossbar node topology and distributed routing algorithm that is particularly suited to optoelectronic implementation.
We report here on experimental and theorectical studies of electro-optical tunability of WGM's in high-Q monolithic lithium niobate resonators and applicability of such resonators for light modulation and filtering. Properties of an optoelectronic microwave oscillator (EOE) based on an WGM LiNbO3 resonator are discussed.
The optoelectronic oscillator (OEO) is a unique device based on photonics techniques to generate highly spectrally pure microwave signals [1]. The development of the OEO was motivated by the need for high performance oscillators in the frequency range larger than 10 GHz, where conventional electronic oscillators have a number of limitations. These limitations typically stem from the product of fQ, where f is the oscillator frequency and Q is the quality factor of the resonator in the oscillator. In conventional resonators, whether electromagnetic or piezoelectric, this product is usually a constant. Thus, as the oscillator frequency is pushed higher, the quality factor degrades, resulting in degradation of the phase noise of the oscillator. An approach to mitigate the problem is to start with a very high quality signal in the 5 to 100 MHz range generated by a quartz oscillator and multiply the frequency to achieve the desired microwave signal. Here again, frequency multiplication also results in an increase of the phase noise by a factor of 2010gN, where N is the multiplication factor.
We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.
NASA Langley Research Center is involved in the development of photonic devices and systems for space exploration missions. Photonic technologies of particular interest are those that can be utilized for in-space communication, remote sensing, guidance navigation and control, lunar descent and landing, and rendezvous and docking. NASA Langley has recently established a class-100 clean-room which serves as a Photonics Fabrication Facility for development of prototype optoelectronic devices for aerospace applications. In this paper we discuss our design, fabrication, and testing of novel active pixels, deformable mirrors, and liquid crystal spatial light modulators. Successful implementation of these intelligent optical devices and systems in space, requires careful consideration of temperature and space radiation effects in inorganic and electronic materials. Applications including high bandwidth inertial reference units, lightweight, high precision star trackers for guidance, navigation, and control, deformable mirrors, wavefront sensing, and beam steering technologies are discussed. In addition, experimental results are presented which characterize their performance in space exploration systems.
A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.
Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.
Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.
Sensitivity of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
A proposed technique for measuring temperature would exploit differences between the temperature dependences of the frequencies of two different electromagnetic modes of a whispering gallery-mode (WGM) optical resonator. An apparatus based on this technique was originally intended to be part of a control system for stabilizing a laser frequency in the face of temperature fluctuations. When suitably calibrated, apparatuses based on this technique could also serve as precise temperature sensors for purposes other than stabilization of lasers. A sensor according to the proposal would include (1) a transparent WGM dielectric resonator having at least two different sets of modes characterized by different thermo-optical constants and (2) optoelectronic instrumentation for measuring the difference between the temperature-dependent shifts of the resonance frequencies of the two sets of modes.
An optoelectronic metrology system is used for determining the attitude and flexing of a large spaceborne radar antenna or similar structure. The measurements are needed for accurate pointing of the antenna and correction and control of the phase of the radar signal wavefront. The system includes a dual-field-of-view star tracker; a laser ranging unit (LRU) and a position-sensitive-detector (PSD)-based camera mounted on an optical bench; and fiducial targets at various locations on the structure. The fiducial targets are illuminated in sequence by laser light coupled via optical fibers. The LRU and the PSD provide measurements of the position of each fiducial target in a reference frame attached to the optical bench. During routine operation, the star tracker utilizes one field of view and functions conventionally to determine the orientation of the optical bench. During operation in a calibration mode, the star tracker also utilizes its second field of view, which includes stars that are imaged alongside some of the fiducial targets in the PSD; in this mode, the PSD measurements are traceable to star measurements.