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At least 343 records · Page 19

Diagnosis of information scrambling from Hamiltonian evolution under decoherence

We apply a quantum teleportation protocol based on the Hayden-Preskill thought experiment to quantify how scrambling a given quantum evolution is. It has an advantage over the direct measurement of out-of time ordered correlators when used to diagnose the information scrambling in the presence of decoherence effects stemming from a noisy quantum device. We demonstrate the protocol by applying it to two physical systems: Ising spin chain and SU(2) lattice Yang-Mills theory. To this end, we numerically simulate the time evolution of the two theories in the Hamiltonian formalism. The lattice Yang-Mills theory is implemented with a suitable truncation of Hilbert space on the basis of the Kogut-Susskind formalism. On a two-leg ladder geometry and with the lowest nontrivial spin representations, it can be mapped to a spin chain, which we call Yang-Mills-Ising model and is also directly applicable to future digital quantum simulations. Here, we find that the Yang-Mills-Ising model shows the signal of information scrambling at late times.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Probing Charge Dynamics in Diamond with an Individual Color Center

Control over the charge states of color centers in solids is necessary to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-band-gap semiconductors are complex, and much remains unknown. We utilize a single-shot charge-state readout of an individual nitrogen-vacancy (NV) center to probe the charge dynamics of the surrounding defects in diamond. We show that the NV center charge state can be converted through the capture of holes produced by optical illumination of defects many micrometers away. With this method, we study the optical charge conversion of silicon-vacancy (SiV) centers and provide evidence that the dark state of the SiV center under optical illumination is SiV 2– . These measurements illustrate that charge carrier generation, transport, and capture are important considerations in the design and implementation of quantum devices with color centers and provide a novel way to probe and control charge dynamics in diamond.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Stochastic quantum Krylov protocol with double-factorized Hamiltonians

Here we propose a class of randomized quantum Krylov diagonalization (rQKD) algorithms capable of solving the eigenstate estimation problem with modest quantum resource requirements. Compared to previous real-time evolution quantum Krylov subspace methods, our approach expresses the time evolution operator e –i$\widehat{H}$$\tau$ as a linear combination of unitaries and subsequently uses a stochastic sampling procedure to reduce circuit depth requirements. While our methodology applies to any Hamiltonian with fast-forwardable subcomponents, we focus on its application to the explicitly double-factorized electronic-structure Hamiltonian. To demonstrate the potential of the proposed rQKD algorithm on near-term quantum devices, we provide numerical benchmarks for a variety of molecular systems with circuit-based state-vector simulators including the effects of sampling noise, achieving ground-state energy errors of less than 1 kcal mol -1 with circuit depths orders of magnitude shallower than those required for low-rank deterministic Trotter-Suzuki decompositions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Revealing room temperature ferromagnetism in exfoliated Fe 5 GeTe 2 flakes with quantum magnetic imaging

Van der Waals (vdW) material Fe 5 GeTe 2 , with its long-range ferromagnetic ordering near room temperature, has significant potential to become an enabling platform for implementing novel spintronic and quantum devices. To pave the way for applications, it is crucial to determine the magnetic properties when the thickness of Fe 5 GeTe 2 reaches the few-layers regime. However, this is highly challenging due to the need for a characterization technique that is local, highly sensitive, artifact-free, and operational with minimal fabrication. Prior studies have indicated that Curie temperature T C can reach up to close to room temperature for exfoliated Fe 5 GeTe 2 flakes, as measured via electrical transport; there is a need to validate these results with a measurement that reveals magnetism more directly. Here, we investigate the magnetic properties of exfoliated thin flakes of vdW magnet Fe 5 GeTe 2 via quantum magnetic imaging technique based on nitrogen vacancy centers in diamond. Through imaging the stray fields, we confirm room-temperature magnetic order in Fe 5 GeTe 2 thin flakes with thickness down to 7 units cell. The stray field patterns and their response to magnetizing fields with different polarities is consistent with previously reported perpendicular easy-axis anisotropy. Furthermore, we perform imaging at different temperatures and determine the Curie temperature of the flakes at ≈300 K. These results provide the basis for realizing a room-temperature monolayer ferromagnet with Fe 5 GeTe 2 . This work also demonstrates that the imaging technique enables rapid screening of multiple flakes simultaneously as well as time-resolved imaging for monitoring time-dependent magnetic behaviors, thereby paving the way towards high throughput characterization of potential two-dimensional (2D) magnets near room temperature and providing critical insights into the evolution of domain behaviors in 2D magnets due to degradation.

2D magnet↗

Quantum Time Dynamics Mediated by the Yang–Baxter Equation and Artificial Neural Networks

Quantum computing shows great potential, but errors pose a significant challenge. This study explores new strategies for mitigating quantum errors using artificial neural networks (ANNs) and the Yang–Baxter equation (YBE). Unlike traditional error mitigation methods, which are computationally intensive, we investigate artificial error mitigation. We developed a novel method that combines ANNs for noise mitigation combined with the YBE to generate noisy data. This approach effectively reduces noise in quantum simulations, enhancing the accuracy of the results. The YBE rigorously preserves quantum correlations and symmetries in spin chain simulations in certain classes of integrable lattice models, enabling effective compression of quantum circuits while retaining linear scalability with the number of qubits. This compression facilitates both full and partial implementations, allowing the generation of noisy quantum data on hardware alongside noiseless simulations using classical platforms. By introducing controlled noise through the YBE, we enhance the data set for error mitigation. We train an ANN model on partial data from quantum simulations, demonstrating its effectiveness in mitigating errors in time-evolving quantum states, providing a scalable framework to enhance quantum computation fidelity, particularly in noisy intermediate-scale quantum (NISQ) systems. We demonstrate the efficacy of this approach by performing quantum time dynamics simulations using the Heisenberg XY Hamiltonian on real quantum devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Origin of surface and subband states at the InAs(111)A surface

The atomic structure of surfaces and interfaces plays a vital role in the electronic quality and properties of quantum devices. The interplay between the surface and confined bulk subband states in terms of their susceptibility has been investigated in relation to crystal defects on an InAs(111)A-(2×2) reconstructed surface, using low-temperature scanning tunneling microscopy and spectroscopy. We measure the two-dimensional quantized subband states arising from the confined potential imposed by downward bending of the conduction band edge. Furthermore, we show evidence of the existence of surface Bloch states within the confined bulk band gap projected on the surface spectrum which have originated from the surface reconstruction. As expected, larger confined bulk band gaps at the surface and conduction band offset are measured to be 0.58 and 0.31 eV, respectively. Here we further show the scattering of these quantum states at different surface defects and demonstrate that surface states are more susceptible to the defect potential when compared with the corresponding subband states. This apparent contrast follows from the length scale at which these defect potentials actively interact on or near the surface. Our observed experimental results are supported by empirical tight-binding simulations for the subband states and first-principles density functional theory simulations for the surface states present on the surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Predicting Phonon-Induced Spin Decoherence from First Principles: Colossal Spin Renormalization in Condensed Matter

Developing a microscopic understanding of spin decoherence is essential to advancing quantum technologies. Electron spin decoherence due to atomic vibrations (phonons) plays a special role as it sets an intrinsic limit to the performance of spin-based quantum devices. Two main sources of phonon-induced spin decoherence—the Elliott-Yafet and Dyakonov-Perel mechanisms—have distinct physical origins and theoretical treatments. Here, we show calculations that unify their modeling and enable accurate predictions of spin relaxation and precession in semiconductors. We compute the phonon-dressed vertex of the spin-spin correlation function with a treatment analogous to the calculation of the anomalous electron magnetic moment in QED. We find that the vertex correction provides a giant renormalization of the electron spin dynamics in solids, greater by many orders of magnitude than the corresponding correction from photons in vacuum. Finally, our Letter demonstrates a general approach for quantitative analysis of spin decoherence in materials, advancing the quest for spin-based quantum technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide

Abstract We present a new method for thin-film synthesis of the superconducting A15 phase of vanadium silicide with critical temperature higher than 13 K. Interdiffusion between a metallic vanadium film and the underlying silicon device layer in a silicon-on-insulator substrate, at temperatures between 650 and 750 °C, favors formation of the vanadium-rich A15 phase by limiting the supply of available silicon for the reaction. Energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction verify the stoichiometry and structure of the synthesized thin films. We measure superconducting critical currents of more than 10 6 amperes per square centimeter at low temperature in micron-scale bars fabricated from the material, and an upper critical magnetic field of 20 T, from which we deduce a superconducting coherence length of 4 nm, consistent with previously reported bulk values. The relatively high critical temperature of A15 vanadium silicide is an appealing property for use in silicon-compatible quantum devices and circuits.

36 MATERIALS SCIENCE↗

Bottom-up fabrication of 2D Rydberg exciton arrays in cuprous oxide

Solid-state platforms provide exceptional opportunities for advancing on-chip quantum technologies by enhancing interaction strengths through coupling, scalability, and robustness. Cuprous oxide (Cu 2 O) has recently emerged as a promising medium for scalable quantum technology due to its high-lying Rydberg excitonic states, akin to those in hydrogen atoms. To harness these nonlinearities for quantum applications, the confinement dimensions must match the Rydberg blockade size, which can reach several microns in Cu 2 O. Using a CMOS-compatible growth technique, this study demonstrates the bottom-up fabrication of site-selective arrays of Cu 2 O microparticles. We observed Rydberg excitons up to the principal quantum number n = 5 within these Cu 2 O arrays on a quartz substrate and analyzed the spatial variation of their spectrum across the array, showing robustness and reproducibility on a large chip. These results lay the groundwork for the deterministic growth of Cu 2 O around photonic structures, enabling substantial light-matter interaction on integrated photonic platforms and paving the way for scalable, on-chip quantum devices.

36 MATERIALS SCIENCE↗

Perturbative model of noisy quantum signal processing

Recent progress in quantum signal processing (QSP) and its generalization, quantum singular value transformation, has led to a grand unification of quantum algorithms. However, inherent experimental noise in quantum devices severely limits the length of realizable QSP sequences. Here, we consider a model of QSP with generic perturbative noise in the signal processing basis and present a diagrammatic notation useful for analyzing such errors. To demonstrate our technique, we study a specific coherent error, that of under- or overrotation of the signal processing operator parametrized by ε<<1. For this coherent error model, it is shown that while Pauli Z errors are not recoverable without additional resources, Pauli X and Y errors can be arbitrarily suppressed by coherently appending a noisy recovery QSP without the use of additional resources or ancillas. Furthermore, through a careful accounting of errors using our diagrammatic tools, we provide an upper and lower bound on the length of this recovery QSP operator. We anticipate that the perturbative technique and the diagrammatic notation proposed here will facilitate future study of generic noise in QSP and quantum algorithms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Full characterization of ultrathin 5-nm low-k dielectric bilayers: Influence of dopants and surfaces on the mechanical properties

Ultrathin films and multilayers, with controlled thickness down to single atomic layers, are critical for advanced technologies ranging from nanoelectronics to spintronics to quantum devices. However, for thicknesses less than 10 nm, surfaces and dopants contribute significantly to the film properties, which can differ dramatically from that of bulk materials. Therefore, for amorphous films being developed as low dielectric constant interfaces for nanoelectronics, the presence of surfaces or dopants can soften films and degrade their mechanical performance. Here we use coherent short-wavelength light to fully and nondestructively characterize the mechanical properties of individual films as thin as 5 nm within a bilayer. In general, we find that the mechanical properties depend both on the amount of doping and the presence of surfaces. In very thin (5-nm) silicon carbide bilayers with low hydrogen doping, surface effects induce a substantial softening - by almost an order of magnitude - compared with the same doping in thicker (46-nm) bilayers. These findings are important for informed design of ultrathin films for a host of nano- and quantum technologies, and for improving the switching speed and efficiency of next-generation electronics.

36 MATERIALS SCIENCE↗

Efficient Measurement-Driven Eigenenergy Estimation with Classical Shadows

Quantum algorithms exploiting real-time evolution under a target Hamiltonian have demonstrated remarkable efficiency in extracting key spectral information. However, the broader potential of these methods, particularly beyond ground-state calculations, is underexplored. In this work, we introduce the framework of multiobservable dynamic mode decomposition (MODMD), which combines the observable dynamic mode decomposition (DMD), a measurement-driven eigensolver tailored for near-term implementation, with classical shadow tomography. MODMD leverages random scrambling in the classical shadow technique to construct, with exponentially reduced resource requirements, a signal subspace that encodes rich spectral information. Notably, we replace typical Hadamard-test circuits with a protocol designed to predict low-rank observables, thereby broadening the use of classical shadow tomography for predicting many low-rank observables. We establish theoretical guarantees on the spectral approximation from MODMD, taking into account distinct sources of error. In the ideal case, we prove that the spectral error scales as exp (−Δ⁢𝐸⁢𝑡 max ), where Δ⁢𝐸 is the Hamiltonian spectral gap and 𝑡 max is the maximal simulation time. This analysis provides a rigorous justification of the rapid convergence observed across simulations. To demonstrate the utility of our framework, we consider its application to fundamental tasks, such as determining the low-lying, i.e., ground or excited, energies of representative many-body systems. Our work paves the path for efficient designs of measurement-driven algorithms on near-term and early fault-tolerant quantum devices.

quantum algorithms & computation↗

Contactless excitation of acoustic resonance in insulating wafers

Contactless excitation and detection of high harmonic acoustic overtones in a thin insulator single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for the fabrication of quantum devices. Additionally, the coupling between electromagnetic signals and mechanical oscillation is achieved from the Lorentz force generated by an external magnetic field. This method is suitable for any sample with a metallic surface or covered with a thin metal film. High resolution measurements of the temperature dependence of the sound velocity and elastic constants of silicon are reported and compared with known results.

47 OTHER INSTRUMENTATION↗

Quantum advantages for Pauli channel estimation

We show that entangled measurements provide an exponential advantage in sample complexity for Pauli channel estimation, which is both a fundamental problem and a practically important subroutine for benchmarking near-term quantum devices. The specific task we consider is to simultaneously learn all the eigenvalues of an n-qubit Pauli channel to ±ε precision. We give an estimation protocol with an n-qubit ancilla that succeeds with high probability using only O(n/ε 2 ) copies of the Pauli channel, while proving that any ancilla-free protocol (possibly with adaptive control and channel concatenation) would need at least Ω(2 n/3 ) rounds of measurement. We further study the advantages provided by a small number of ancillas. For the case that a k-qubit ancilla (k≤n) is available, we obtain a sample complexity lower bound of Ω(2 (n-k)/3 ) for any nonconcatenating protocol, and a stronger lower bound of Ω(n 2n-k ) for any nonadaptive, nonconcatenating protocol, which is shown to be tight. We also show how to apply the ancilla-assisted estimation protocol to a practical quantum benchmarking task in a noise-resilient and sample-efficient manner, given reasonable noise assumptions. Our results provide a practically interesting example for quantum advantages in learning and also bring insights for quantum benchmarking.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural Design of Bismuth Telluride Nanoplates through Process Variables

Binary pnictogen chalcogen compounds, primarily bismuth tellurides and selenides, are of great interest due to their applications in emerging quantum devices, as well as thermoelectric generators. The performance of bismuth telluride in these roles depends on its structure at the nanoscale, particularly the size, shape, and crystallinity of its nanocrystalline forms. However, current methods for controlling these features are often slow, inconsistent, or difficult to scale. Here, we demonstrate that through a solvothermal synthesis and hot injection process, precise control over the morphology of bismuth telluride nanoplates is possible with independent tuning of process variables, such as temperature and reaction time. We find that the nanoplate shape and internal porosity vary systematically with synthesis temperature and that the same morphological outcomes can be rapidly achieved at a fixed temperature by adjusting reaction duration. These results reveal that both the temperature and time can independently direct bismuth telluride morphological features, allowing for rapid, tunable synthesis strategies. Our approach offers a scalable framework, not only for bismuth telluride but also for related layered chalcogenides used in energy harvesting and quantum technologies.

Ackley, Jordan [Boise State Univ., ID (United Stat↗

Towards large-scale quantum optimization solvers with few qubits

Quantum computers hold the promise of more efficient combinatorial optimization solvers, which could be game-changing for a broad range of applications. However, a bottleneck for materializing such advantages is that, in order to challenge classical algorithms in practice, mainstream approaches require a number of qubits prohibitively large for near-term hardware. Here we introduce a variational solver for MaxCut problems over $m={{\mathcal{O}}}({n}^{k})$ binary variables using only n qubits, with tunable k > 1. The number of parameters and circuit depth display mild linear and sublinear scalings in m , respectively. Moreover, we analytically prove that the specific qubit-efficient encoding brings in a super-polynomial mitigation of barren plateaus as a built-in feature. Altogether, this leads to high quantum-solver performances. For instance, for m = 7000, numerical simulations produce solutions competitive in quality with state-of-the-art classical solvers. In turn, for m = 2000, experiments with n = 17 trapped-ion qubits feature MaxCut approximation ratios estimated to be beyond the hardness threshold 0.941. Our findings offer an interesting heuristics for quantum-inspired solvers as well as a promising route towards solving commercially-relevant problems on near-term quantum devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Engineering of niobium surfaces through accelerated neutral atom beam technology for quantum applications

A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLSs). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by “surface engineering” (i.e., replacing the uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher intrinsic quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages accelerated neutral atom beam (ANAB) technology at 300 mm wafer scale. This ANAB is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 to 6 nm depending on ANAB process parameters. The modeling of variable-energy x-ray photoelectron spectroscopy data confirms the thickness and compositional control of Nb surface oxide by the ANAB process. Furthermore, these results correlate well with those from transmission electron microscopy and x-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.

36 MATERIALS SCIENCE↗

Scalable Nanoimprint Manufacturing of Functional Multilayer Metasurface Devices

Optical metasurfaces, consisting of subwavelength-scale meta-atom arrays, hold great promise of overcoming the fundamental limitations of conventional optics. Due to their structural complexity, metasurfaces usually require high-resolution yet slow and expensive fabrication processes. Here, using a metasurface polarimetric imaging device as an example, the photonic structures and the Nanoimprint lithography (NIL) processes are designed, creating two separate NIL molds over a patterning area of > 20 mm2 with designed Moiré alignment markers by electron-beam writing, and further subsequently integrate silicon and aluminum metasurface structures on a chip. Uniquely, the silicon and aluminum metasurfaces are fabricated by using the nanolithography and 3D pattern-transfer capabilities of NIL, respectively, achieving nanometer-scale linewidth uniformity, sub-200 nm translational overlay accuracy, and <0.017 rotational alignment error while significantly reducing fabrication complexity and surface roughness. Here, the micro-sized multilayer metasurfaces have high circular polarization extinction ratios as large as ≈20 and ≈80 in blue and red wavelengths. Further, the metasurface chip-integrated CMOS imager demonstrates high accuracy in broad-band, full Stokes parameter analysis in the visible wavelength ranges and single-shot polarimetric imaging. This novel, NIL-based, multilayered nanomanufacturing approach is applicable to the scalable production of large-area functional structures for ultra-compact optic, electronic, and quantum devices.

36 MATERIALS SCIENCE↗