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Results for “switching device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Pulse switching for high energy lasers

A saturable inductor switch for compressing the width and sharpening the rise time of high voltage pulses from a relatively slow rise time, high voltage generator to an electric discharge gas laser (EDGL) also provides a capability for efficient energy transfer from a high impedance primary source to an intermediate low impedance laser discharge network. The switch is positioned with respect to a capacitive storage device, such as a coaxial cable, so that when a charge build-up in the storage device reaches a predetermined level, saturation of the switch inductor releases or switches energy stored in the capactive storage device to the EDGL. Cascaded saturable inductor switches for providing output pulses having rise times of less than ten nanoseconds and a technique for magnetically biasing the saturable inductor switch are disclosed.

Laudenslager, J. B.↗
NASA NTRS1974

Fluid technology (selected components, devices, and systems): A compilation

Developments in fluid technology and hydraulic equipment are presented. The subjects considered are: (1) the use of fluids in the operation of switches, amplifiers, and servo devices, (2) devices and data for laboratory use in the study of fluid dynamics, and (3) the use of fluids as controls and certain methods of controlling fluids.

Source record↗
NASA NTRS2004

New Generation Power System for Space Applications

The Deep Space Avionics (DSA) Project is developing a new generation of power system building blocks. Using application specific integrated circuits (ASICs) and power switching modules a scalable power system can be constructed for use on multiple deep space missions including future missions to Mars, comets, Jupiter and its moons. The key developments of the DSA power system effort are five power ASICs and a mod ule for power switching. These components enable a modular and scalab le design approach, which can result in a wide variety of power syste m architectures to meet diverse mission requirements and environments . Each component is radiation hardened to one megarad) total dose. The power switching module can be used for power distribution to regular spacecraft loads, to propulsion valves and actuation of pyrotechnic devices. The number of switching elements per load, pyrotechnic firin gs and valve drivers can be scaled depending on mission needs. Teleme try data is available from the switch module via an I2C data bus. The DSA power system components enable power management and distribution for a variety of power buses and power system architectures employing different types of energy storage and power sources. This paper will describe each power ASIC#s key performance characteristics as well a s recent prototype test results. The power switching module test results will be discussed and will demonstrate its versatility as a multip urpose switch. Finally, the combination of these components will illu strate some of the possible power system architectures achievable fro m small single string systems to large fully redundant systems.

power switching↗
NASA NTRS1972

A hybrid electromechanical solid state switch for ac power control

Bidirectional thyristor coupled to a series of actuator driven electromechanical contacts generates hybrid electromechanical solid state switch for ac power control. Device is useful in power control applications where zero crossover switching is required.

Source record↗
NASA NTRS1985

Laser activated MTOS microwave device

A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors. Each capacitor includes a thin, light-absorptive aluminum electrode which overlies a thin oxide layer and a lightly doped region implanted in an intrinsic silicon substrate.

Maserjian, J.↗
DOE OSTI2025

Amorphous Indium Oxide Channel FEFETs With Write Voltage of 0.9 V and Endurance >10 12 for Refresh-Free Embedded Memory

This work presents, for the first time, a back-end-of-the-line (BEOL)-compatible W-doped indium oxide (IWO) ferroelectric field-effect transistor (FEFET) with a record-low operating voltage below 0.9 V and a write speed of 20 ns while achieving a transient read current window (CW) ratio ( I LVT /I HVT ) greater than 10 4 . The device also exhibits exceptional reliability characteristics such as: 1) measured bipolar write endurance up to 10 12 cycles; 2) a fast read speed of 50 ns; 3) read endurance surpassing 10 12 cycles; and 4) retention exceeding 10 4 s at 85 ∘ C. Furthermore, a physics-based numerical model has been developed to investigate the nanoscale characteristics of BEOL FEFET devices, leveraging nucleation-limited switching in HfO 2 ferroelectrics and dc characterization to extract material and channel parameters for accurate device simulation. The simulation uncovers the stochastic switching behavior of BEOL amorphous oxide semiconductor (AOS) FEFETs and demonstrates an intrinsic switching time as low as 1 ps, highlighting the potential of BEOL AOS FEFETs for ultrafast memory applications. These results establish AOS FEFETs as a compelling candidate for high-density embedded memory applications for last-level cache (LLC) (L4) in advanced CMOS technology nodes.

1-V ferroelectric field-effect transistor (FEFET)↗
NASA NTRS1966

High voltage potential divider calibrated by simple device

Resistance bridge device incorporates a potentiometer, switches, and a null detector to calibrate high potential dividers under high voltage operation conditions. Calibration can be performed with this device in less than 1 minute at an accuracy of 0.001 percent.

Lewis, R. N.↗
DOE OSTI2021

Operando characterization of conductive filaments during resistive switching in Mott VO 2

Significance To perform hardware-based neuromorphic computing, novel materials exhibiting a wide variety of electronic properties are currently being explored. VO 2 is well known to exhibit an insulator-to-metal transition as well as volatile resistive switching. Many questions regarding the basic mechanism of the nonvolatile switching in this material are unanswered. In this work, the formation and relaxation of conductive filaments through nonvolatile resistive switching in VO 2 devices have been realized. The V 5 O 9 Magnéli phase conductive filament has been identified. Our results demonstrate that both resistive switching behaviors can be achieved in a single material, crucial for future technology like resistive switching memories or neuromorphic logic.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ultrafast Switching of Interfacial Thermal Conductance

Dynamical control of thermal transport at the nanoscale provides a time-domain strategy for optimizing thermal management in nanoelectronics, magnetic devices, and thermoelectric devices. However, the rate of change available for thermal switches and regulators is limited to millisecond time scales, calling for a faster modulation speed. Here, in this work, time-resolved X-ray diffraction measurements and thermal transport modeling reveal an ultrafast modulation of the interfacial thermal conductance of an FeRh/MgO heterostructure as a result of a structural phase transition driven by optical excitation. Within 90 ps after optical excitation, the interfacial thermal conductance is reduced by a factor of 5 and lasts for a few nanoseconds, in comparison to the value at the equilibrium FeRh/MgO interface. The experimental results combined with thermal transport calculations suggest that the reduced interfacial thermal conductance results from enhanced phonon scattering at the interface where the lattice experiences transient in-plane biaxial stress due to the structural phase transition of FeRh. Our results suggest that optically driven phase transitions can be utilized for ultrafast nanoscale thermal switches for device application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2008

Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier

A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.

Patterson, Richard↗
NASA NTRS2008

Circuit with a Switch for Charging a Battery in a Battery Capacitor Circuit

A circuit for charging a battery combined with a capacitor includes a power supply adapted to be connected to the capacitor, and the battery. The circuit includes an electronic switch connected to the power supply. The electronic switch is responsive to switch between a conducting state to allow current and a non-conducting state to prevent current flow. The circuit includes a control device connected to the switch and is operable to generate a control signal to continuously switch the electronic switch between the conducting and non-conducting states to charge the battery.

Stuart, Thomas A.↗
NASA NTRS1974

A spark gap switching system for gasdynamic facilities

A spark gap switching system has been developed to coordinate the discharge of a 300 kJ capacitor bank with the high speed flow of helium in a shock tube driver. The trigger system includes a flow transducer, a pulse forming circuit, a high voltage spark generator, and four heavy duty spark gaps that can carry total peak currents greater than 1.5 million A. A glow gauge flow transducer sensitive to small gas density changes was used whose input power and signal output can withstand high voltage fluctuations. This switching system is of use with gasdynamic discharge devices requiring a minimum number of switches.

Leibowitz, L. P.↗
NASA NTRS2009

Inventions Utilizing Microfluidics and Colloidal Particles

Several related inventions pertain to families of devices that utilize microfluidics and/or colloidal particles to obtain useful physical effects. The families of devices can be summarized as follows: (1) Microfluidic pumps and/or valves wherein colloidal-size particles driven by electrical, magnetic, or optical fields serve as the principal moving parts that propel and/or direct the affected flows. (2) Devices that are similar to the aforementioned pumps and/or valves except that they are used to manipulate light instead of fluids. The colloidal particles in these devices are substantially constrained to move in a plane and are driven to spatially order them into arrays that function, variously, as waveguides, filters, or switches for optical signals. (3) Devices wherein the ultra-laminar nature of microfluidic flows is exploited to effect separation, sorting, or filtering of colloidal particles or biological cells in suspension. (4) Devices wherein a combination of confinement and applied electrical and/or optical fields forces the colloidal particles to become arranged into three-dimensional crystal lattices. Control of the colloidal crystalline structures could be exploited to control diffraction of light. (5) Microfluidic devices, incorporating fluid waveguides, wherein switching of flows among different paths would be accompanied by switching of optical signals.

Marr, David W.↗
DOE OSTI2022

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous–crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In 2 Se 3 ) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer “shear glide” and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline–crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. Finally, the nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In 2 Se 3 -covered layer, resulted from the combinations of material absorption and scattering.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Symmetry Control of Unconventional Spin–Orbit Torques in IrO 2

Abstract Spin–orbit torques generated by a spin current are key to magnetic switching in spintronic applications. The polarization of the spin current dictates the direction of switching required for energy‐efficient devices. Conventionally, the polarizations of these spin currents are restricted to be along a certain direction due to the symmetry of the material allowing only for efficient in‐plane magnetic switching. Unconventional spin–orbit torques arising from novel spin current polarizations, however, have the potential to switch other magnetization orientations such as perpendicular magnetic anisotropy, which is desired for higher density spintronic‐based memory devices. Here, it is demonstrated that low crystalline symmetry is not required for unconventional spin–orbit torques and can be generated in a nonmagnetic high symmetry material, iridium dioxide (IrO 2 ), using epitaxial design. It is shown that by reducing the relative crystalline symmetry with respect to the growth direction large unconventional spin currents can be generated and hence spin–orbit torques. Furthermore, the spin polarizations detected in (001), (110), and (111) oriented IrO 2 thin films are compared to show which crystal symmetries restrict unconventional spin transport. Understanding and tuning unconventional spin transport generation in high symmetry materials can provide a new route towards energy‐efficient magnetic switching in spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Tunable Microwave Conductance of Nanodomains in Ferroelectric PbZr 0.2 Ti 0.8 O 3 Thin Film

Ferroelectric materials exhibit spontaneous polarization that can be switched by electric field. Beyond traditional applications as nonvolatile capacitive elements, the interplay between polarization and electronic transport in ferroelectric thin films has enabled a path to neuromorphic device applications involving resistive switching. A fundamental challenge, however, is that finite electronic conductivity may introduce considerable power dissipation and perhaps destabilize ferroelectricity itself. In this work, tunable microwave frequency electronic response of domain walls injected into ferroelectric lead zirconate titanate (PbZr 0.2 Ti 0.8 O 3 ) on the level of a single nanodomain is revealed. Tunable microwave response is detected through first-order reversal curve spectroscopy combined with scanning microwave impedance microscopy measurements taken near 3 GHz. Contributions of film interfaces to the measured AC conduction through subtractive milling, where the film exhibited improved conduction properties after removal of surface layers, are investigated. Using statistical analysis and finite element modeling, we inferred that the mechanism of tunable microwave conductance is the variable area of the domain wall in the switching volume. These observations open the possibilities for ferroelectric memristors or volatile resistive switches, localized to several tens of nanometers and operating according to well-defined dynamics under an applied field.

36 MATERIALS SCIENCE↗
NASA NTRS1970

Superconducting ''transistor'' acts as high-speed switch

Cryogenic, three-terminal device yields current-voltage characteristics of ordinary transistor. Device consists of two superconducting tin rods in a crossed-wire geometry, separated by a thin gold film. New construction technique is described and possible applications are discussed.

Meissner, H.↗
DOE OSTI2023

Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ~20-nm-thin films consisting of an amorphous HfO x host matrix interspersed with ~2-nm-wide, ~5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥10 4 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing–dependent plasticity. The presented concept unlocks additional design variables for RS devices.

36 MATERIALS SCIENCE↗