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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The soft X-ray sensitivity of the Fairchild 100 x 100 element CCD is studied for possible use as a detector in plasma physics research. The experimental setup and laboratory results are reported including data on slow scan operation of the CCD and performance when cooled. Results from digital computer processing of the data to correct for element-to-element nonuniformities are also discussed.
An outline for an Image 100 procedures manual for Earth Resources Program image analysis was developed which sets forth guidelines that provide a basis for the preparation and updating of an Image 100 Procedures Manual. The scope of the outline was limited to definition of general features of a procedures manual together with special features of an interactive system. Computer programs were identified which should be implemented as part of an applications oriented library for the system.
Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.
Public outreach fact sheet about the Los Angeles 100% Renewable Energy Study (LA100), which is the most comprehensive, detailed study done to model an entirely renewable-based power system as complex as LA's.
Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >1000 °C) and promote surface reconstruction toward atomically clean, flat, and ordered Si(100)-2 × 1. Here, in this study, we compare the aqueous and vapor phase cleaning of Si and Si/SiGe surfaces to prepare APAM-ready and epitaxy-ready surfaces at lower temperatures. Angle resolved X-ray photoelectron spectroscopy (ARXPS) and Fourier transform infrared (FTIR) spectroscopy indicate that vapor hydrogen fluoride (VHF) cleans dramatically reduce carbon surface contamination and allow the chemically prepared surface to reconstruct at lower temperatures, 600 °C for Si and 580 °C for a Si/Si 0.7 Ge 0.3 heterostructure, into an ordered atomic terrace structure indicated by scanning tunneling microscopy (STM). After thermal treatment and vacuum hydrogen termination, we demonstrate STM hydrogen desorption lithography (HDL) on VHF-treated Si samples, creating reactive zones that enable area-selective chemistry by using a thermal budget similar to CMOS process flows. We anticipate that these results will establish new pathways to integrate APAM with Si foundry processing.
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Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.
The p(2 x 2) and c(2 x 2) coverages of S on Ni(100) are studied with a cluster model. Consistent with a recent lattice-dynamics study, the chemical contribution (rigid Ni lattice) to the coverage-dependent shift of the S vibrational energy is of opposite sign to that for O. Analysis of the cluster wave functions suggests that S becomes less negatively charged with coverage, while O becomes more ionic; however, this effect is small.
The adsorption of NH3 and H2O on the Ni(100) is treated using a cluster model. The adsorption is found to have only a small effect on the HXH angle. Rotation about the principal ligand axis requires virtually no energy. Ligand tilts of 15 deg are found to require small amounts of energy, leading to the suggestion that the ESDIAD signal is a result of excited tilting modes, not a change in the HXH angle. For H2O additional bending modes are considered and all are found to be quite flat in energy.
A 1 MW dc-dc power converter has been designed which has an input voltage of 5 kV +/-3 percent, an output voltage of 100 kV +/- 0.25 percent, and a run time of 1000 s at full power. The estimated system mass is 83.8 kg, giving a power density of 11.9 kW/kg. The system exceeded the weight goal of 10 kW/kg through the use of innovative components and system concepts. The system volume is approximately 0.1 cu m, and the overall system efficiency is estimated to be 87 percent. Some of the unique system features include a 50-kHz H-bridge inverter using MOS-controlled thyristors as the switching devices, a resonance transformer to step up the voltage, open-cycle cryogenic hydrogen gas cooling, and a nonrigid, inflatable housing which provides on-demand pressurization of the power converter local environment. This system scales very well to higher output powers. The weight of the 10-MW system with the same input and output voltage requirements and overall system configuration is estimated to be 575.3 kg. This gives a power density of 17.4 kW/kg, significantly higher than the 11.9 kW/kg estimated at 1 MW.
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We present a new measurement of the Cabibbo-Kobayashi-Maskawa matrix element
Abstract not provided.
Topographic evaluation of aerial radar photography