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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Towards Scalable 3D Integration of 2T-nC FeRAM with Hundreds of Layer Stacking

In this article, we study the limits of the number of capacitors and read history dependence in a 2T-nC ferroelectric random-access memory (FeRAM) cell, paving the way for its high-density integration toward hundreds of stacked layers. Through a comprehensive experimental and simulation study on the scaling behavior of the 2T-nC FeRAM architecture, we demonstrate: (i) successful fabrication of 2T-64C cells with robust memory operation and clearly distinguishable ‘0’ and ‘1’ states, even in 64- capacitor configurations; (ii) that the parasitic capacitance of the floating node originates predominantly from the linear component of the ferroelectric capacitor, and its impact on n-scaling—due to degraded sense margin—can be mitigated by floating unselected capacitors with enough TΩ isolation; (iii) that sharing write and read transistors among n capacitors introduces a read history dependence issue due to fluctuating floating node voltage (VFN); and (iv) that a proposed FN discharge scheme can effectively eliminate read-sequence dependence, at the cost of reduced read endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Three wafer stacking for 3D integration.

Vertical wafer stacking will enable a wide variety of new system architectures by enabling the integration of dissimilar technologies in one small form factor package. With this LDRD, we explored the combination of processes and integration techniques required to achieve stacking of three or more layers. The specific topics that we investigated include design and layout of a reticle set for use as a process development vehicle, through silicon via formation, bonding media, wafer thinning, dielectric deposition for via isolation on the wafer backside, and pad formation.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Physics Basis, Optimization, and Control for Integrated 3D Edge Long-pulse Tokamak Scenarios

The aim of this project with international collaborations (PI: J.-K. Park of Princeton Plasma Physics Laboratory) is to develop a unified physics basis and predictive capability for the control of edge-localized modes (ELMs) with optimized non-axisymmetric (3D) fields, by leveraging the unique research capabilities of international KSTAR tokamak in Korea. At the University of California, Irvine, we use a fusion simulation code GTC to study the effects of the 3D magnetic fields (including both magnetic islands and stochastic magnetic field lines) on microturbulence. We focus on the effects of 3D equilibrium on turbulent and neoclassical transport that leads to ELM suppression. During the project period, the UCI team of this collaboration has made significant progress in understanding turbulent transport in 3D geometry including both tokamaks with RMP and stellarators. Four UCI postdoctoral researchers, Drs. Javier Nicolau, Gyungjin Choi, Pengfei Liu, and Xishuo Wei were partially supported by this project and collaborating with the entire project team. We have published 4 journal papers and gave several invited talks. This project advance physics understand of 3D effects on microturbulence, specially effects of magnetic islands. It will contribute to the DOE SciDAC ISEP project in the area of GTC development for general 3D geometry capability, rigorous verification and validation, and readiness for the emerging exascale computing. Through collaborations with computational scientists, the project helps to advance high performance computing in the area of GPU acceleration, linear solver, and data management.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

EGS Collab Earth Modeling: Integrated 3D Model of the Testbed

The EGS Collab project is conducting a series of stimulation and interwell flow tests in an intermediate scale (~10-20 m) testbed located on the 4850 level in the Sanford Underground Research Facility (SURF) in Lead, South Dakota. The testbed consists of eight ~200 ft (~60 m) HQ-diameter (9.6 cm) boreholes that are drilled into the Poorman Formation from the western rib of the West Access Drift. Of the eight boreholes, one borehole is used as an injection/stimulation well, another sub-parallel borehole located about 10 m away from the injection well is used as a production well, and rest of the other boreholes are used as monitoring wells. For 3D visualization of the testbed as well as to provide spatially accurate and consistent parameter data for geomechanical and geophysical process modeling tasks, we are using Leapfrog Software (Seequent Limited). For analysis of fractures and creation of conditioned stochastic discrete fracture network (CS-DFN) model of the testbed, we are using FracMan (Golder Associates Inc.). As of mid-May 2019, the EGS Collab Leapfrog database contains the general layout of the drifts/shafts at the 4850 and 4100 levels; generalized geologic framework model of a domain that spans both the 4850 and 4100 levels; the CS-DFN of the testbed; and layouts of the EGS Collab testbed boreholes, kISMET testbed boreholes, and other existing boreholes at the 4850 level. This information has been obtained from the SURF Vulcan database, detailed laser scan and point surveys of borehole collar locations, directional surveys of borehole trajectories, and mapping of features in the drifts, boreholes, and cores. Similarly, other types of data that have been incorporated into the Leapfrog database include static features of the testbed such as natural discontinuities (e.g., fractures, weeps), location of monitoring instruments, and stimulation notches. Baseline geophysical characterization results (e.g., seismic, ERT, temperature, etc.) are also imported into the Leapfrog database. The location and size of packers, various point-source signals detected during stimulation and flow tests (e.g., temperature anomalies, micro-earthquake events, etc.) are also compiled in the database. All feature locations are reported using the local Homestake Mine coordinate system. In this paper, we present some of the geostructural characteristics as well as the status of the testbed as represented by Leapfrog/FracMan database/visualizations.

15 GEOTHERMAL ENERGY↗
DOE OSTI2014

Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration

We present the excimer laser crystallization of amorphous silicon on a low dielectric constant (low-k) insulator for very large scale integration monolithic 3D integration and demonstrate that low dielectric constant materials are suitable substrates for 3D integration through laser crystallization of silicon thin films. We crystallized 100 nm amorphous silicon on top of SiO{sub 2} and SiCOH (low-k) dielectrics, at different material thicknesses (1 μm, 0.75 μm, and 0.5 μm). The amorphous silicon crystallization on low-k dielectric requires 35% less laser energy than on an SiO{sub 2} dielectric. This difference is related to the thermal conductivity of the two materials, in agreement with one dimensional simulations of the crystallization process. We analyzed the morphology of the material through defect-enhanced microscopy, Raman spectroscopy, and X-ray diffraction analysis. SEM micrographs show that polycrystalline silicon is characterized by micron-long grains with an average width of 543 nm for the SiO{sub 2} sample and 570 nm for the low-k samples. Comparison of the Raman spectra does not show any major difference in film quality for the two different dielectrics, and polycrystalline silicon peaks are closely placed around 517 cm{sup −1}. From X-ray diffraction analysis, the material crystallized on SiO{sub 2} shows a preferential (111) crystal orientation. In the SiCOH case, the 111 peak strength decreases dramatically and samples do not show preferential crystal orientation. A 1D finite element method simulation of the crystallization process on a back end of line structure shows that copper (Cu) damascene interconnects reach a temperature of 70 °C or lower with a 0.5 μm dielectric layer between the Cu and the molten Si layer, a favorable condition for monolithic 3D integration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Advanced Heterogeneous Integration Enabled by 3D Freestanding Membranes—From Material Growths to Applications

For the future of electronics such as bioelectronics, 3D integrated electronics, and bendable electronics, the need for flexibility and stackability of electronic products has substantially grown up. However, conventional wafer-based single-crystalline semiconductors cannot catch up with such trends because they are bound to thick rigid wafers such that they are neither flexible nor stackable. Although polymer-based organic electronic materials are more compatible as they are mechanically compliant and less costly than inorganic counterparts, their electronic/photonic performance is substantially inferior to that of single-crystalline inorganic materials. Such performance-mechanical compliance dilemma could be resolved by developing methods to obtain cheap, flexible, stackable, single-crystalline inorganic systems. Such dream electronic systems could be realized by producing single-crystalline freestanding membranes. For the past few decades, various layer transfer techniques (a.k.a layer liftoff techniques) have been developed to produce single-crystalline freestanding membranes. In today's talk, I will present the survey of the layer liftoff techniques and go over how these strategies unlock new ways of manufacturing advanced electronic systems. In addition, I will introduce unprecedented artificial heterostructure devices enabled by stacking of those freestanding 3D material membranes, e.g., the world's smallest vertically-stacked full-color micro-LEDs, the world's best multiferroic devices, chip-less wireless e-skin, and reconfigurable hetero-integrated chips with AI accelerators.

Kim, Jeehwan↗
DOE OSTI2022

Advanced Heterogeneous Integration Enabled by 3D Freestanding Membranes—From Material Growths to Applications

For the future of electronics such as bioelectronics, 3D integrated electronics, and bendable electronics, the need for flexibility and stackability of electronic products has substantially grown up. However, conventional wafer-based single-crystalline semiconductors cannot catch up with such trends because they are bound to thick rigid wafers such that they are neither flexible nor stackable. Although polymer-based organic electronic materials are more compatible as they are mechanically compliant and less costly than inorganic counterparts, their electronic/photonic performance is substantially inferior to that of single-crystalline inorganic materials. Such performance-mechanical compliance dilemma could be resolved by developing methods to obtain cheap, flexible, stackable, single-crystalline inorganic systems. Such dream electronic systems could be realized by producing single-crystalline freestanding membranes. For the past few decades, various layer transfer techniques (a.k.a layer liftoff techniques) have been developed to produce single-crystalline freestanding membranes. In today's talk, I will present the survey of the layer liftoff techniques and go over how these strategies unlock new ways of manufacturing advanced electronic systems. In addition, I will introduce unprecedented artificial heterostructure devices enabled by stacking of those freestanding 3D material membranes, e.g., the world's smallest vertically-stacked full-color micro-LEDs, the world's best multiferroic devices, chip-less wireless e-skin, and reconfigurable hetero-integrated chips with AI accelerators.

Kim, Jeehwan↗
DOE OSTI2022

How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration

The 3D integration technology in semiconductor fabrication requires a key component, the ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped amorphous (a-) GeSe glass is a commercialized OTS material in 3D phase-change memory, but the understanding of such a doping mechanism is still inadequate. Here we systematically explore the effect of As doping on the structural, bonding, and dynamics properties of a-GeAsSe using ab initio molecular dynamics simulations. The results reveal that As atoms form strong bonds with both Ge and Se atoms. The distorted octahedral structures and the 5-fold rings linked by atoms are increased. All of these structural features lead to a more disordered configuration. Moreover, as atoms have notably slowed down the atomic mobility, rendering a-GeAsSe a high stability. Overall, our studies offer insightful understanding of As-doping in OTS materials, paving the way for the design and application of advanced selector devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Three-dimensional imaging of copper pillars using x-ray tomography within a scanning electron microscope: A simulation study based on synchrotron data

While microelectronic devices are frequently characterized with surface-sensitive techniques having nanometer resolution, interconnections used in 3D integration require 3D imaging with high penetration depth and deep sub-micrometer spatial resolution. X-ray tomography is well adapted to this situation. In this context, the purpose of this study is to assess a versatile and turn-key tomographic system allowing for 3D x-ray nanotomography of copper pillars. The tomography tool uses the thin electron beam of a scanning electron microscope (SEM) to provoke x-ray emission from specific metallic targets. Then, radiographs are recorded while the sample rotates in a conventional cone beam tomography scheme that ends up with 3D reconstructions of the pillar. Starting from copper pillars data, collected at the European Synchrotron Radiation Facility, we build a 3D numerical model of a copper pillar, paying particular attention to intermetallics. This model is then used to simulate physical radiographs of the pillar using the geometry of the SEM-hosted x-ray tomography system. Eventually, data are reconstructed and it is shown that the system makes it possible the quantification of 3D intermetallics volume in copper pillars. The paper also includes a prospective discussion about resolution issues.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗