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Changes in surface morphology of helium-induced tungsten nanostructure during high-temperature annealing
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Metastable ordered states induced by low-temperature annealing of δ − Ag 2 / 3 V 2 O 5
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High‐Throughput Study of Amorphous Stability and Optical Properties of Superlattice‐Like Ge–Sb–Te Thin Films
A high‐throughput ion beam sputtering system is used to synthesize compositional gradient superlattice‐like (SLL) thin film libraries of Ge–Sb–Te alloys over the entire phase diagram. Here, the optical properties and structural evolution of the Ge–Sb–Te combinatorial SLL thin film are investigated. A systematic screening over the annealing temperature, annealing time, and modulation period has elucidated the critical factors that affect the stability of the metastable phase and optical properties. It is found that amorphous stability and optical constant are highly dependent on the modulation period and chemical composition of the thin film. This data‐driven approach offers new perspectives for accelerating the development of new materials with excellent optical and amorphous stability and for exploring their mechanisms, by greatly expanding the dataset of Ge–Sb–Te alloys with SLL structures through high‐throughput experiments.
Temperature and processing effects on lithium ion conductivity of solution‐deposited lithium zirconium phosphate (LiZr 2 P 3 O 12 ) thin films
Abstract Lithium zirconium phosphate (LiZr 2 P 3 O 12 ) thin films have been prepared on platinized silicon substrates via a chemical solution deposition approach with processing temperatures between 700°C and 775°C. Films that were subject to a single high‐temperature anneal were found to crystallize at temperatures above 725°C. Crystallization was observed in films annealed after each deposited layer at 700°C and above. In both cases, grain size was found to increase with annealing temperature. Ion conductivity was found to increase with annealing temperature in singly annealed films. In per‐layer annealed films ion conductivity was found to initially increase then decrease with increasing annealing temperature. A maximum ion conductivity of 1.6 × 10 −6 S/cm was observed for the singly annealed 775°C condition, while a maximum ion conductivity of 5.8 × 10 −7 S/cm was observed for the 725°C per‐layer annealed condition. These results are consistent with an increasing influence of cross‐plane, internal interface resistance and vapor phase carrier loss in the per‐layer annealed samples. This work demonstrates that post‐deposition processing methods can strongly affect the ion conducting properties of LiZr 2 P 3 O 12 thin films.
Effects of Post-sintering Annealing on (NdLa)-(FeCo)-B Magnets
A common limitation of La substitutions into (Nd, La) 2 Fe 14 B magnets is the reduction of the anisotropy field (H a ), which decreases magnet coercivity (H cj ). In this study, adding a small amount of Pr-Cu to a La-containing neo magnet may modify the grain boundary (GB), which can help recover a fraction of the degraded H cj . An optimal GB modification requires a carefully designed post-sinter heat treatment, which is the focus of this work on characterizing the effects of multi-step post-sintering annealing on the evolutions of microstructure and magnetic properties. We find that Nd and Cu concentrations at GBs and triple junctions (TJs) increase when the annealing temperatures are lowered. Annealing temperatures of 580°C and 480°C (near rare-earth-rich eutectic temperatures) enabled the development of a thick and continuous GB phase, which helps to magnetically decouple the grains, and, thus, enhance H cj . For the alloy with 25% Nd replaced by La, and with the addition of 7.5 wt.% of Pr 68 Cu 32 as GB modifier, the optimized multi-step post-sinter annealing improved the H cj from 4.8 kOe to 9 kOe.
Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates
The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (104) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 10 8 to 3 × 10 7 cm −2 , determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.
α-Quartz Phase Stabilization, Surface Texturing, and Tunable Optical Properties of Nanocrystalline GeO 2 Films Made by Pulsed-Laser Deposition: Implications for Optical and Optoelectronic Applications
Germanium oxide (GeO 2 ) has great potential in multifunctional devices and next-generation power electronics due to its high thermal conductivity and ambipolar doping capability. However, the complexity of synthesizing the desirable polymorph with a controlled phase, surface/interface quality, microstructure, and functional properties is the main barrier to GeO 2 utilization in advanced applications. Here, in this regard, we present a method to realize the hexagonal (h) or a-quartz type GeO 2 with nano-textured surface morphology on sapphire substrates using a hybrid synthesis strategy that comprises pulsed laser deposition (PLD) and post-deposition thermal annealing. We performed a comprehensive study to investigate the effect of annealing temperature, which was varied in a wide range (600-1100 °C), on the crystal structure, phase, surface morphology, chemical stoichiometry, defect states, and optical properties of PLD-grown GeO 2 films. As-deposited GeO 2 films at 500 °C were amorphous. Upon annealing, the GeO 2 films induced an amorphous-to-crystalline phase transformation; GeO 2 films annealed at higher annealing temperatures (≥900 °C) stabilized in the hexagonal phase and demonstrated excellent crystal quality and chemical stability. Thermally activated growth process showed increased average crystallite size, which was varied in the range of 20-130 (±2) nm, while the surface roughness followed a similar trend. The spectral transmittance and band gap also increased with increasing annealing temperature. The resulting h-GeO 2 films, particularly those obtained at annealing temperatures in the 900-1100 °C range, had a higher band gap of 6.2-6.3 eV and displayed excellent optical transmittance in the visible region. Moreover, the absence of extended valence band maxima and reduced optical defect density support the quality improvement upon annealing. When considering phase-pure bulk and nanostructured GeO 2 as a possible candidate for ultra wide band gap semiconductors in cutting-edge technological applications, the results of the current work can be beneficial to realize high structural and optical quality a-quartz structured GeO 2 films.
Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells
Polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts enable ultra high efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated amorphous silicon through mechanically aligned shadow masks, on top of a full-area intrinsic amorphous silicon layer. High temperature annealing then crystallized the a-Si:H to poly Si and drove in the dopants. Two mechanisms were identified which cause contamination of the intrinsic poly Si gap during processing. During deposition of doped fingers, we show using secondary ion mass spectrometry and conductivity measurements that the intrinsic gap becomes contaminated by doped a-Si:H tails several nanometers thick to concentrations of ~10 20 cm -3 . Another source of contamination occurs during high-temperature annealing, where dopants desorb from doped regions and readsorb onto intrinsic a Si:H. Both pathways reduce the resistivity of the intrinsic gap from ~10 5 Ω·cm to ~10 -1 Ω·cm. We show that plasma etching of the a-Si:H surface before crystallizing with a capping layer can eliminate the contamination of the intrinsic poly-Si, maintaining a resistivity of ~10 5 Ω·cm. Lastly, this demonstrates masked plasma deposition as a dopant patterning method for Si solar cells.
Internal-Gelation Production of Uranium Oxide Sol-Gel Particles for Forensic Applications
The purpose of this project was to develop and demonstrate a novel method for the production of uranium oxide microsphere particles with tunable chemical compositions via a sol-gel process using a 3D-printer setup. These particles can serve several purposes in research and development as a forensic training tool or as standard reference materials. A key component of the project was to demonstrate the ability to control physical and chemical parameters of the particles created. First, we demonstrated the ability to employ an internal gelation sol-gel process to create individual uranium oxide particles. The particles were successfully dispensed using a unique 3D-printing setup onto a substrate to react and then were collected and thermally processed. A series of temperatures for the annealing process was tested on individual samples to investigate the effect on the sol-gel chemical composition and physical integrity. Next, we demonstrated the ability to control matrix composition of the particles by separately incorporating fission product isotopes as well as Np-237 into the sol-gel solution. It was shown by gamma-ray spectroscopy that these matrix elements were successfully retained during the gelation process. We studied the retention of the elements across a series of annealing temperatures. Additionally, we demonstrated the ability to quantitatively control the isotopic composition of the particles by altering the U-237/U-238 ratio to a controlled value. Finally, X-ray diffraction analysis (XRD) was used to investigate the oxidation state of the sol-gel after annealing at different temperatures.
Enhancing the local conductivity of Cu films using temperature-assisted agglomerated Cu nanostructures
We investigate the structural and electrical properties of Cu film and reveal their changes as a function of post-annealing temperature. Thermal annealing of a Cu film on a dielectric substrate can improve its crystallinity; however, high-temperature annealing also leads to a morphological transformation that hinders the precise measurement of electrical properties. The enhanced crystallinity of the Cu films is verified with x-ray diffraction as the annealing temperature increases. To examine the electrical properties of the Cu film after the dewetting processes, which promotes the formation of voids and agglomerations, we utilize both conventional micro four-point probe method as well as an advanced four-point probe scanning tunneling microscopy (4P-STM) technique to measure the conductance and evolution of the microscopic structural properties. We could eliminate a deceptive effect of voids with 4P-STM technique, and disclosed a significantly reduced resistivity (1.88 ± 0.07 µΩ∙cm) of Cu nanostructure after post-annealing at 700 °C. We unveiled impact of crystallinity and imperfections of Cu nanostructure, and discussed the critical role of the twin grain boundaries of single-crystalline Cu (1 1 1) on an Al 2 O 3 substrate. We anticipate that understanding the evolution of the structures and the enhanced electrical properties of the post-annealed Cu nanostructures would be important for nanoscale devices where Cu is used as an interconnecting material and could provide a new route to control the plasmonic applications.
Dynamic behavior of reversible oxygen migration in irradiated-annealed high temperature superconducting wires
Large-scale extrusion-based additive manufacturing of high-performance thermoplastic composites like fiber reinforced polyphenylene sulfide (PPS) is well-suited for tooling applications to lower manufacturing costs and lead times. Autoclave tooling requires good mechanical performance at temperatures even above the glass transition temperature (T g ). In this work, the authors have investigated a post-process isothermal annealing technique to improve the mechanical properties of various grades of carbon fiber reinforced PPS components printed on the Big Area Additive Manufacturing (BAAM) system. Since PPS is a semi-crystalline polymer, crystallinity can change during annealing and affect the mechanical properties of the part. In addition, isothermal annealing can also lead to solid-state structural changes in the form of thermal and oxidative branching and/or crosslinking reactions in some grades of PPS which can alter the crystallization process. This work reports the effect of annealing on dynamic mechanical properties of BAAM printed components, along with studies to determine the effect of annealing on crystallinity and the occurrence of oxidative reactions. Results showed that isothermal annealing at 250 °C for 18 h improved the storage modulus of all selected grades (neat and reinforced) of PPS at temperatures above T g . Annealing led to an overall increase in the degree of crystallinity, with secondary crystallization taking place. Although oxidative structural changes were observed to occur more on the surface of the PPS parts, they primarily influenced the size of crystals formed and did not significantly alter the degree of crystallinity at various regions within the sample.
Microstructural and micro-mechanical analysis of 14YWT nanostructured Ferritic alloy after varying thermo-mechanical processing paths into tubing
Microstructural analyses and micro-pillar compression were conducted on 14YWT nanostructured ferritic alloy (NFA) to compare different processing pathways: hydrostatic extrusion and Pilger processing with varying annealing temperatures into thin walled tubing, and after hot extrusion and cross-rolling into a plate. Hydrostatic extrusion at 815 °C resulted in the smallest grain sizes and highest yield strength of 1.20 GPa. Pilger processing with annealing at 800 °C had fine grained regions and bands of coarse grains, leading to a large variation in yield strength of 0.9–1.40 GPa. Higher annealing temperatures of 1200 °C after pilger processing significantly increased the grain size and lowered the yield strength to 1.01 GPa. These tubes showed a stronger (111) crystallographic texture in the normal direction and elongated grains in the extrusion direction. Characterization of the nano-oxides using TEM reveals more numerous, smaller oxides present in tubing processed at lower temperatures. Overall, this work shows NFA tubing after hydrostatic extrusion and pilger processing can lead to fine grained microstructures and texturing leading to higher yield strengths at lower annealing temperatures (e.g. 800 °C).
Thermal stability of 3D interface Cu/Nb nanolaminates
Nanocrystalline alloys are promising structural materials yet lack thermal stability in many cases. Recent work shows that interface structure has an outsize effect on the thermal behavior of nanostructured alloys. Here, this work focuses on the role of controlled heterophase interface structure in the thermal evolution of model Cu/Nb nanolaminates. We introduce 3D interfaces containing nanoscale heterogeneities in all spatial dimensions between Cu and Nb, forming 3D Cu/Nb. TEM, nanoindentation, and DSC are used in tandem to establish thermal stability and to identify shifts in microstructure as a function of static annealing temperature. 3D interfaces are shown to survive annealing to 300 °C for 1 hr., while 3D Cu/Nb microstructure evolves to form low-density and voided regions correlating to the onset of layer pinch-off between 500 and 600 °C annealing temperatures. A diffusivity- and vacancy energetics-based mechanism is developed to explain void formation driven by 3D interface degradation at elevated temperature.
Imaging CdCl 2 defect passivation and formation in polycrystalline CdTe films by cathodoluminescence
Polycrystalline thin-film solar cells are attractive for low-cost photovoltaics, but their efficiencies are hindered by material quality issues. State-of-the-art CdTe solar cells use CdCl 2 annealing treatments whose effects are still being discovered at a fundamental level. Here, a series of CdTe samples with different annealing temperatures is investigated with high-resolution hyperspectral cathodoluminescence mapping measured at both room temperature and low temperature on the same microscopic areas. A statistical analysis over a large number of grains is combined with a local analysis at grain boundaries. The results elucidate the dynamic interplay between grain boundary and intragrain defect passivation and formation, in the midst of grain growth. The CdCl 2 annealing initially contributes to an increase of the grain size and the passivation of both grain boundaries and grain interiors, increasing the overall luminescence and diffusion length. For higher annealing temperatures, a further increase of grain size is counterbalanced by the rise of bulk defects. The results illustrate the tradeoffs that lead to an optimal annealing temperature, as well as new methods for understanding defect passivation and creation in thin film solar cells.
Identifying the connections between grain growth and flux expulsion in low RRR niobium SRF cavities
The SRF community has shown that high temperature annealing can improve the flux expulsion of niobium cavities during cooldown. The required temperature will vary between cavities and different batches of material, typically around 800 C and up to 1000 C. However, for niobium with a low residual resistance ratio (RRR), even 1000 C is not enough to improve its poor flux expulsion. The purpose of this study is to observe the grain growth behavior of low RRR niobium coupons subjected to high temperature annealing to identify the mechanism for improving flux expulsion. We observe that low RRR material experiences less grain growth than high RRR when annealed at the same temperature. We search for the limitations to grain growth in low RRR material and develop a diagnostic based on grain structure to determine the appropriate recipe for good flux expulsion. The results of this study have the potential to unlock a new understanding on SRF materials and enable the next generation of high Q/high gradient surface treatments.
Identifying the Connections between Grain Growth and Flux Expulsion in Low RRR Niobium SRF Cavities
The SRF community has shown that high temperature annealing can improve the flux expulsion of niobium cavities during cooldown. The required temperature will vary between cavities and different batches of material, typically around 800 C and up to 1000 C. However, for niobium with a low residual resistance ratio (RRR), even 1000 C is not enough to improve its poor flux expulsion. The purpose of this study is to observe the grain growth behavior of low RRR niobium coupons subjected to high temperature annealing to identify the mechanism for improving flux expulsion. We observe that low RRR material experiences less grain growth than high RRR when annealed at the same temperature. We search for the limitations to grain growth in low RRR material and develop a diagnostic based on grain structure to determine the appropriate recipe for good flux expulsion. The results of this study have the potential to unlock a new understanding on SRF materials and enable the next generation of high Q/high gradient surface treatments.
Identifying the Connections between Grain Growth and Flux Expulsion in Low RRR Niobium SRF Cavities
The SRF community has shown that high temperature annealing can improve the flux expulsion of niobium cavities during cooldown. The required temperature will vary between cavities and different batches of material, typically around 800 C and up to 1000 C. However, for niobium with a low residual resistance ratio (RRR), even 1000 C is not enough to improve its poor flux expulsion. The purpose of this study is to observe the grain growth behavior of low RRR niobium coupons subjected to high temperature annealing to identify the mechanism for improving flux expulsion. We observe that low RRR material experiences less grain growth than high RRR when annealed at the same temperature. We search for the limitations to grain growth in low RRR material and develop a diagnostic based on grain structure to determine the appropriate recipe for good flux expulsion. The results of this study have the potential to unlock a new understanding on SRF materials and enable the next generation of high Q/high gradient surface treatments.