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The beta-SiC(100) surface studied by low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectra

The beta-SiC(100) surface has been studied by low energy electron diffraction, Auger electron spectroscopy, high resolution electron energy loss spectra (HREELS), and core level excitation EELS. Two new Si-terminated phases have been discovered, one with (3 x 2) symmetry, and the other with (2 x 1) symmetry. Models are presented to describe these phases. New results, for the C-rich surface, are presented and discussed. In addition, core level excitation EELS results are given and compared with theory.

Dayan, M.↗

Surface segregation in titanium as monitored by Auger electron spectroscopy

Investigation of the surface diffusion and segregation of bulk impurities in titanium single crystals under well-defined and controlled experimental conditions. It is shown that an atomically clean titanium single-crystal surface can be obtained by argon ion bombardment within the temperature range from 700 to 800 C. It is demonstrated by Auger electron spectroscopy that, if such clean surfaces are subjected to thermal treatment, bulk impurities, especially sulfur, diffuse out to the crystal surface, and that the rate of surface segregation increases with increasing temperature.

Khan, I. H.↗

Auger electron spectroscopy, secondary ion mass spectroscopy and optical characterization of a-C-H and BN films

The amorphous dielectrics a-C:H and BN were deposited on III-V semiconductors. Optical band gaps as high as 3 eV were measured for a-C:H generated by C4H10 plasmas; a comparison was made with bad gaps obtained from films prepared by CH4 glow discharges. The ion beam deposited BN films exhibited amorphous behavior with band gaps on the order of 5 eV. Film compositions were studied by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The optical properties were characterized by ellipsometry, UV/VIS absorption, and IR reflection and transmission. Etching rates of a-C:H subjected to O2 dicharges were determined.

Pouch, J. J.↗

An Auger electron spectroscopy study of surface-preparation contaminants

There are many cleaning techniques that are presently being employed for surface preparation of materials that are subsequently exposed to ultrahigh vacuum (UHV). Unfortunately, there are virtually no comparative measurements which establish the residual contaminant level of each method. In this report, eleven different cleaning methods, ranging from only detergent cleaning to electrochemical polishing, were applied to identical samples of 347 stainless steel. Two surface conditions, a standard machined surface and a mechanically polished surface, were studied. Auger electron spectroscopy (AES) within a UHV environment was then used to detect the types of contaminants and the magnitudes found on the sample surfaces. It was found that the electrochemical polishing gave the least contaminated surface of all metals studied and that mechanically polished surfaces were significantly cleaner than the as-machined surfaces for any given cleaning method. Furthermore, it was also found that the residual contaminations left by methanol, ethanol, isopropyl alcohol, acetone, and freon finishing rinses are almost the same.

Wu, D.↗

Auger electron spectroscopy study of oxidation of a PdCr alloy used for high-temperature sensors

A Pd-13 wt. percent Cr solid solution is a promising high-temperature strain gage alloy. In bulk form it has a number of properties that are desirable in a resistance strain gage material, such as a linear electrical resistance versus temperature curve to 1000 C and stable electrical resistance in air at 1000 C. However, unprotected fine wire gages fabricated from this alloy perform well only to 600 C. At higher temperatures severe oxidation degrades their electrical performance. In this work Auger electron spectroscopy was used to study the oxidation chemistry of the alloy wires and ribbons. Results indicate that the oxidation is caused by a complex mechanism that is not yet fully understood. As expected, during oxidation, a layer of chromium oxide is formed. This layer, however, forms beneath a layer of metallic palladium. The results of this study have increased the understanding of the oxidation mechanism of Pd-13 wt. percent Cr.

Boyd, Darwin L.↗

Mechanical testing - In situ fracture device for Auger electron spectroscopy

An in situ fracture device for Auger spectroscopy is described. The device is designed to handle small tensile specimens or small double-cantilever beam specimens and is fully instrumented with load and displacement transducers so that quantitative stress-strain measurements can be made directly. Some initial test results for specimens made from 4130 and 1020 steel are presented. Results indicate that impurity segregation at interfaces other than grain boundary may play a significant role in the mechanism of ductile fracture.

Moorhead, R. D.↗

Mechanical test in-situ fracture device for Auger electron spectroscopy

An in-situ fracture device for Auger spectroscopy was described. The device is designed to handle small tensile specimens or small double cantilever beam specimens and is fully instrumented with load and displacement transducers so that quantitative stress-strain measurements can be made directly. Some initial test results for specimens made from 4130 and 1020 steel were presented.

Moorhead, R. D.↗

Mapping the composition of planetary surfaces by Auger electron spectroscopy

The feasibility of AES as a remote-sensing technique to map the composition of the sunlit surfaces of planetary bodies without atmospheres is studied. Solar X-rays eject photoelectrons from the planetary surface. The resulting ions relax by emission of fluorescence X-rays or Auger electrons, with energies characteristic of the element which is ionized. The spectrum of Auger electrons and photoelectrons is computed for a variety of elements and for representative lunar rock types illuminated by soft-X-ray line and continuum emission typical of solar long-lived coronal active regions. The Auger electron lines for O, Si, Mg, Al, Fe, and Ca in lunar rocks stand well above the continuum background from photoelectrons and backscattered interplanetary electrons, with typical line-to-continuum ratios from about 20 to over 1000.

Lin, R. P.↗

Characterization of interfacial failure in SiC reinforced Si3N4 matrix composite material by both fiber push-out testing and Auger electron spectroscopy

AES depth profiling and a fiber push-out test for interfacial shear-strength determination have been used to ascertain the mechanical/chemical properties of the fiber/matrix interface in SiC-reinforced reaction-bonded Si3N4, with attention to the weak point where interfacial failure occurs. In the cases of both composite fracture and fiber push-outs, the interfacial failure occurred either between the two C-rich coatings that are present on the double-coated SiC fibers, or between the inner C-rich coating and the SiC fiber. Interface failure occurs at points of very abrupt concentration changes.

Eldridge, J. I.↗

Development of graphite/copper composites utilizing engineered interfaces

In situ measurements of graphite/copper alloy contact angles were made using the sessile drop method. The interfacial energy values obtained from these measurements were then applied to a model for the fiber matrix interfacial debonding phenomenon found in graphite/copper composites. The formation obtained from the sessile drop tests led to the development of a copper alloy that suitably wets graphite. Characterization of graphite/copper alloy interfaces subjected to elevated temperatures was conducted using Scanning Electron Microscopy, Energy Dispersive Spectroscopy, Auger Electron Spectroscopy, and X Ray Diffraction analyses. These analyses indicated that during sessile drop tests conducted at 1130 C for 1 hour, copper alloys containing greater than 0.98 at pct chromium form continuous reaction layers of approx. 10 microns in thickness. The reaction layers are adherent to the graphite surface. The copper wets the reaction layer to form a contact angle of 60 deg or less. X ray diffraction results indicate that the reaction layer is Cr3C2.

Devincent, Sandra M.↗

Reaction layer formation at the graphite/copper-chromium alloy interface

Sessile drop tests were used to obtain information about copper chromium alloys that suitably wet graphite. Characterization of graphite/copper-chromium alloy interfaces subjected to elevated temperatures were conducted using scanning electron micrography, energy dispersive spectroscopy, auger electron spectroscopy, and x ray diffraction analyses. These analyses indicate that during sessile drop tests conducted at 1130 C for one hour, copper alloys containing greater than 0.98 percent chromium form continuous reaction layers of approximately 10 micron thickness. The reaction layers adhere to the graphite surface. The copper wets the reaction layer to form a contact angle of 60 degrees or less. X ray diffraction results indicate that the reaction layer is chromium carbide. The kinetics of reaction layer formation were modelled in terms of bulk diffusion mechanisms. Reaction layer thickness is controlled initially by the diffusion of Cr out of Cu alloy and later by the diffusion of C through chromium carbide.

Devincent, Sandra M.↗

Reaction layer formation at the graphite/copper-chromium alloy interface

Sessile drop tests were used to obtain information about copper chromium alloys that suitably wet graphite. Characterization of graphite/copper-chromium alloy interfaces subjected to elevated temperatures were conducted using scanning electron micrography, energy dispersive spectroscopy, Auger electron spectroscopy, and X-ray diffraction analyses. These analyses indicate that during sessile drop tests conducted at 1130 C for one hour, copper alloys containing greater than 0.98 percent chromium form continuous reaction layers of approximately 10 micron thickness. The reaction layers adhere to the graphite surface. The copper wets the reaction layer to form a contact angle of 60 degrees or less. X-ray diffraction results indicate that the reaction layer is chromium carbide. The kinetics of reaction layer formation were modelled in terms of bulk diffusion mechanisms. Reaction layer thickness is controlled initially by the diffusion of Cr out of Cu alloy and later by the diffusion of C through chromium carbide.

Devincent, Sandra M.↗

Compositional effects on Si3N4 fracture surfaces

Surface analysis techniques (X-ray, infrared reflection spectroscopy, Auger electron spectroscopy) applied to the same samples reveal that fracture surfaces of Si3N4 with Y2O3 densification aids possess a higher concentration of oxygen than the bulk. The oxide densification aids thus concentrate in the grain boundaries, and even low-temperature fracture is seen as occurring preferentially within the oxygen-enriched grain boundaries. It is found that increasing the concentrations of Y2O3 and Al2O3 increases the oxygen content of the fracture surface. A range of 13-15 percent Y2O3 + 6 percent Al2O3 gives an amorphous grain-boundary phase that is resistant to devitrification. Fracture occurs through the amorphous phase, and heat treatment at 1000 C has little effect on the amorphous phase.

Hench, L. L.↗

Presence, segregation and reactivity of H, C and N dissolved in some refractory oxides

The sources of impurities, particularly carbon, in high melting oxides and silicates are discussed, along with detection and quantification methods. The impurities are important for their effects on bulk material properties through the media of, e.g., surface or grain boundary characteristics. The impurities are usually encountered by the contact of the oxide (refractory) material with volatiles such as H2O and CO2, which become incorporated in the material and form anion complexes with oxygen acting as a covalent bonded ligand. The specific processes undergone by MgO in assimilating C impurities are delineated, using data obtained with X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry and nuclear reaction profiling. Finally, maintenance of a supersaturated solid solution with C impurities by space charge control is described as a means of offset impurity effects.

Freund, F.↗

Characterization of microcomposite polyimide films

Thermally stable microcomposite polyimide films were prepared by the homogeneous incorporation of either a soluble metal salt or a metal complex into a poly(amide-acid)/N,N-dimethylacetamide solution. The thermal processing of films solvent cast onto glass substrates and cured in an appropriate atmosphere yields films containing not only a fairly uniform dispersion of submicrometer particles, but also a new surface layer of metal or metal oxide. These polymeric systems have been characterized using X-ray photoelectron spectroscopy, Auger electron spectroscopy with depth profiling via argon ion etching, transmission electron microscopy of ultramicrotomed cross-sections, scanning electron microscopy, elemental analysis, thermal analysis, and variable temperature electrical resistivity determinations. The data from these techniques were used cooperatively to develop a model for these microcomposite polyimide films.

Rancourt, J. D.↗

Evidence of alloy formation during reduction of platinized tin oxide surfaces

Ion scattering spectroscopy, Auger electron spectroscopy, and electron spectroscopy for chemical analysis have been used to examine a platinized tin oxide catalyst surface before, during, and after reduction by annealing under vacuum at 250 to 450 C. These techniques were then used to examine the reduced surface after a room-temperature, low-pressure oxygen exposure. The spectral results and the behavior of the reduced surface toward oxygen exposure both indicate that a Pt/Sn alloy is produced during reduction.

Gardner, Steven D.↗

Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

Zhu, Shen↗