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At least 37 records · Page 2

On 32-GHz cryogenically cooled HEMT low-noise amplifiers

The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz High Electron Mobility Transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 K to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

Bautista, J. J.↗

Broadband linearisation of high-efficiency power amplifiers

A feedforward-based amplifier linearization technique is presented which is capable of yielding significant improvements in both linearity and power efficiency over conventional amplifier classes (e.g. class-A or class-AB). Theoretical and practical results are presented showing that class-C stages may be used for both the main and error amplifiers yielding practical efficiencies well in excess of 30 percent, with theoretical efficiencies of much greater than 40 percent being possible. The levels of linearity which may be achieved are required for most satellite systems, however if greater linearity is required, the technique may be used in addition to conventional pre-distortion techniques.

Kenington, Peter B.↗

Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitrate (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6, and Drain Efficiency (DE) of 48.9 under continuous wave (CW) operation.

Cognitive↗

Multiband Reconfigurable Harmonically Tuned Gallium Nitride (GaN) Solid-State Power Amplifier (SSPA) for Cognitive Radios

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse Class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6 percent, and Drain Efficiency (DE) of 48.9 percent under continuous wave (CW) operation.

Cognitive↗

THz Instrumentation for the Herschel Space Observatory's Heterodyne Instrument for Far Infrared

The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-bapd Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.

local oscillators↗

Broadband Continuous Single-mode Tuning of a Short-cavity Quantum-cascade VECSEL

Changing the length of a laser cavity is a simple technique for continuously tuning the wavelength of a laserbutis rarelyused for broad fractional tuning, with a notable exception of the diode laser VCSEL1,2. This is because, to avoid mode hopping, the cavity must be keptopticallyshort to ensure a large free-spectral-range (FSR) compared to the gain bandwidth of the amplifying material. Terahertz quantum-cascade (QC) lasers are ideal candidates for such a short cavity scheme as they demonstrate exceptional gain bandwidths (up to octave spanning) and can be integrated with broadband amplifying metasurfaces. We present such a QC-metasurface based vertical-external-cavity surface-emitting-laser (VECSEL) that exhibits over 20% continuous fractional tuning of a single laser mode. Such tuning is possible because the metasurface has sub-wavelength thickness which allows lasing on low-order Fabry-Pérot cavity modes. Good beam quality and high output power are simultaneously obtained.

Christopher A Curwen↗

0.5 W 2-21 GHz monolithic GaAs distributed amplifier

A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of the amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 x 300-micron FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The power-added efficiency was 14 percent. The linear gain was 5 plus or minus 1 dB over the same frequency band.

Kim, B.↗

Recent advances concerning an understanding of sound transmission through engine nozzles and jets

Experiments on the interaction between a turbulent jet and pure tone sound coming from inside the jet nozzle are reported. This is a model representing the sound transmission from sound sources in jet engines through the nozzle and the jet flow into the far field. It is shown that pure tone sound at low frequencies is considerably attenuated by the jet flow, whereas it is conserved at higher frequencies. On the other hand, broadband jet noise can be amplified considerably by a pure tone excitation. Both effects seem not to be interdependent. Knowledge on how they are created and on relevant parameter dependences allow new considerations for the development of sound attenuators.

Bechert, D.↗

Matching Network For Microwave Preamplifier

Stable operation and broadband, optimum noise performance achieved. Amplifier designed by new method of matching input impedance for optimum noise figure and stability. Output more nearly constant over wider frequency range.

Sifri, Jack D.↗

Far-field noise of a subsonic jet under controlled excitation

The role of large-scale coherent structures in broadband jet noise suppression and amplification under controlled excitation are studied experimentally. It is found that suppression occurs only at low Reynolds and Mach numbers, when the boundary layer at the jet exit is laminar; the optimum St(Theta) (St, based on the initial shear-layer momentum thickness) value is 0.017, at which the excitation results in a quick roll-up and transition of the laminar shear-layer vortices, yielding coherent structures similar to those existing at high speeds. At the asymptotic level the broadband jet noise can only be amplified by the excitation. The amplification is inferred to be maximum for excitation in the St(D) (St based on the jet diameter) range of 0.65-0.85. Finally, it is noted that the pairing process induced by the excitation is at the origin of the broadband noise amplification.

Zaman, K. B. M. Q.↗

Low phase-shift amplifier

Single-stage MOSFET amplifier is described which is identical to standard neutralized amplifier except that neutralization provided by broadband transformer is applied to AGC gate instead of signal gate. Neutralization of drain-to-control gate capacity minimizes the phase change induced by variation in AGC.

Lutes, G. F.↗

Comments on measuring the overall and the depressed collector efficiency in TWT's and klystron amplifiers

Kosmahl and Ramins (1977), who reported results achieved with broadband, high-performance TWT's, augmented with multistage depressed collectors for higher overall efficiency, have pointed out the necessity for accurately measuring and correctly defining the various power terms involved. In view of the now wide-spread use of depressed collectors and reported results, the definitions of tube and collector efficiency are restated and comments are provided on the sensitivity of these terms to various sources of experimental and definitional errors in order to permit a uniform evaluation of collector performance.

Kosmahl, H. G.↗

The 30-GHz monolithic receive module

The fourth year progress is described on a program to develop a 27.5 to 30 GHz GaAs monolithic receive module for spaceborne-communication antenna feed array applications, and to deliver submodules for experimental evaluation. Program goals include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. Submicron gate length single and dual gate FETs are described and applied in the development of monolithic gain control amplifiers and low noise amplifiers. A two-stage monolithic gain control amplifier based on ion implanted dual gate MESFETs was designed and fabricated. The gain control amplifier has a gain of 12 dB at 29 GHz with a gain control range of over 13 dB. A two-stage monolithic low noise amplifier based on ion implanted MESFETs which provides 7 dB gain with 6.2 dB noise figure at 29 GHz was also developed. An interconnected receive module containing LNA, gain control, and phase shifter submodules was built using the LNA and gain control ICs as well as a monolithic phase shifter developed previously under this program. The design, fabrication, and evaluation of this interconnected receiver is presented. Progress in the development of an RF/IF submodule containing a unique ion implanted diode mixer diode and a broadband balanced mixer monolithic IC with on-chip IF amplifier and the initial design of circuits for the RF portion of a two submodule receiver are also discussed.

Bauhahn, P.↗

Prototype ultrasonic instrument for quantitative testing

A prototype ultrasonic instrument has been designed and developed for quantitative testing. The complete delivered instrument consists of a pulser/receiver which plugs into a standard oscilloscope, an rf power amplifier, a standard decade oscillator, and a set of broadband transducers for typical use at 1, 2, 5 and 10 MHz. The system provides for its own calibration, and on the oscilloscope, presents a quantitative (digital) indication of time base and sensitivity scale factors and some measurement data.

Lynnworth, L. C.↗

Broadband Active Antenna

Effective area of search coil increased. Input impedance presented by operational amplifier and associated components nearly balances out impedance of search coil. Fluctuations in ambient magnetic field induce large currents in search coil.

Sutton, John F.↗

Amplification of microwaves by superconducting microbridges in a four-wave parametric mode

Parametric amplification of microwaves was observed using thin-film junctions of the Anderson-Dayem type. A series of 80 such junctions were incorporated into the upper conductor of a broadband 50-ohm microstrip transmission line with no DC bias. The amplifier was operated in the 'doubly degenerate' mode with signal, pump, and idler frequencies closely and equally spaced. An electronic gain of 12 dB at 10 GHz was observed. The bandwidth was measured to be 1 GHz and the noise temperature to be less than 20 K.

Parrish, P. T.↗